公开(公告)号：US09105320B2

公开(公告)日：2015-08-11

申请号：US14055643

申请日：2013-10-16

Applicant: Micron Technology, Inc.

Inventor： Martin F. Schubert ,  Scott E. Sills

IPC: G11C8/02 ,  G11C8/12

CPC classification number: G11C8/12 ,  G11C8/10 ,  G11C13/0002 ,  G11C13/0004 ,  G11C13/0023 ,  G11C13/003 ,  G11C2213/71 ,  G11C2213/78 ,  G11C2213/79

Abstract: The present disclosure includes memory devices and methods of operating the same. One such device includes an array of groups of memory cells, a group selector configured to select a particular group of memory cells from within the array, and a cell selector configured to select a particular memory cell from within the selected particular group of memory cells.

Abstract translation: 本公开包括存储器件及其操作方法。 一个这样的设备包括存储器单元组的阵列，配置为从阵列内选择特定的存储器单元组的组选择器，以及被配置为从所选择的特定存储单元组内选择特定存储器单元的单元选择器。

公开(公告)号：US09054235B2

公开(公告)日：2015-06-09

申请号：US13747182

申请日：2013-01-22

Applicant: Micron Technology, Inc.

Inventor： Martin F. Schubert ,  Vladimir Odnoblyudov ,  Scott D. Schellhammer

IPC: H01L21/00 ,  H01L31/02 ,  H01L31/0236 ,  H01L31/0352 ,  H01L33/00

CPC classification number: H01L33/0025 ,  H01L25/0753 ,  H01L25/167 ,  H01L27/14687 ,  H01L31/02 ,  H01L31/0236 ,  H01L31/035209 ,  H01L33/0079 ,  H01L33/06 ,  H01L33/22 ,  H01L33/32 ,  H01L33/486 ,  H01L33/62 ,  H01L2924/0002 ,  Y02E10/50 ,  H01L2924/00

Abstract: Semiconductor device assemblies having solid-state transducer (SST) devices and associated semiconductor devices, systems, and are disclosed herein. In one embodiment, a method of forming a semiconductor device assembly includes forming a support substrate, a transfer structure, and a plurality semiconductor structures between the support substrate and the transfer structure. The method further includes removing the support substrate to expose an active surface of the individual semiconductor structures and a trench between the individual semiconductor structures. The semiconductor structures can be attached to a carrier substrate that is optically transmissive such that the active surface can emit and/or receive the light through the carrier substrate. The individual semiconductor structures can then be processed on the carrier substrate with the support substrate removed. In some embodiments, the individual semiconductor structures are singulated from the semiconductor device assembly and include a section of the carrier substrate attached to each of the individual semiconductor structures.

Abstract translation: 具有固态转换器（SST）器件和相关半导体器件，系统的半导体器件组件，并在此公开。 在一个实施例中，形成半导体器件组件的方法包括在支撑衬底和转移结构之间形成支撑衬底，转移结构和多个半导体结构。 该方法还包括去除支撑衬底以暴露各个半导体结构的有源表面和各个半导体结构之间的沟槽。 半导体结构可以附着到光学透射的载体衬底上，使得有源表面可以通过载体衬底发射和/或接收光。 然后可以在移除支撑衬底的情况下在载体衬底上处理各个半导体结构。 在一些实施例中，各个半导体结构从半导体器件组件分离，并且包括连接到每个单个半导体结构的载体衬底的一部分。

公开(公告)号：US20140361382A1

公开(公告)日：2014-12-11

申请号：US13913968

申请日：2013-06-10

Applicant: Micron Technology, Inc.

Inventor： Martin F. Schubert ,  Vladimir Odnoblyudov ,  Cem Basceri

IPC: H01L23/522 ,  H01L21/768

CPC classification number: H01L21/76898 ,  H01L21/6835 ,  H01L21/6836 ,  H01L23/481 ,  H01L23/4824 ,  H01L23/522 ,  H01L29/78 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2224/24 ,  H01L2224/24137 ,  H01L2224/82 ,  H01L2225/06541 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Semiconductor devices and methods for making semiconductor devices are disclosed herein. A semiconductor device configured in accordance with a particular embodiment includes a substrate having a source/drain region, an interconnect, and first and second electrodes extending between first and second sides of the substrate. The first electrode includes a first contact pad and a via extending through the substrate that connects the first contact pad with the interconnect. The second electrode includes a second contact pad and a conductive feature in the substrate that connects the second contact pad with the interconnect.

Abstract translation: 本文公开了用于制造半导体器件的半导体器件和方法。 根据特定实施例配置的半导体器件包括具有源极/漏极区域，互连以及在衬底的第一和第二侧面之间延伸的第一和第二电极的衬底。 第一电极包括第一接触焊盘和延伸穿过基板的通孔，其将第一接触焊盘与互连件连接。 第二电极包括第二接触焊盘和衬底中的导电特征，其将第二接触焊盘与互连连接。

公开(公告)号：US20140183442A1

公开(公告)日：2014-07-03

申请号：US13732739

申请日：2013-01-02

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Vladimir Odnoblyudov ,  Martin F. Schubert

IPC: H01L29/205 ,  H01L33/06

CPC classification number: H01L33/32 ,  H01L21/6835 ,  H01L21/76254 ,  H01L29/2003 ,  H01L29/205 ,  H01L33/0079 ,  H01L33/06 ,  H01L33/24 ,  H01L2221/6835 ,  H01L2221/68368 ,  H01L2221/68381

Abstract: Engineered substrates having epitaxial templates for forming epitaxial semiconductor materials and associated systems and methods are disclosed herein. In several embodiments, for example, an engineered substrate can be manufactured by forming a first semiconductor material at a front surface of a donor substrate. The first semiconductor material is transferred to first handle substrate to define a first formation structure. A second formation structure is formed to further include a second semiconductor material homoepitaxial to the first formation structure. The method can further include transferring the first portion of the second formation structure to a second handle substrate such that a second portion of the second formation structure remains at the first handle substrate.

Abstract translation: 本文公开了具有用于形成外延半导体材料的外延模板和相关联的系统和方法的工程衬底。 在几个实施例中，例如，可以通过在施主衬底的前表面处形成第一半导体材料来制造工程衬底。 第一半导体材料被转移到第一处理衬底以限定第一形成结构。 形成第二形成结构以进一步包括与第一形成结构同质外延的第二半导体材料。 该方法还可以包括将第二结构结构的第一部分转移到第二处理衬底，使得第二结构结构的第二部分保留在第一处理衬底上。

公开(公告)号：US20140159063A1

公开(公告)日：2014-06-12

申请号：US13708526

申请日：2012-12-07

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Vladimir Odnoblyudov ,  Martin F. Schubert

IPC: H01L27/04 ,  H01L33/36 ,  H01L21/78 ,  H01L33/08 ,  H01L33/00

CPC classification number: H01L33/62 ,  H01L21/78 ,  H01L25/0753 ,  H01L27/04 ,  H01L27/156 ,  H01L33/0025 ,  H01L33/005 ,  H01L33/0095 ,  H01L33/06 ,  H01L33/32 ,  H01L33/382 ,  H01L33/405 ,  H01L33/58 ,  H01L33/64 ,  H01L33/642 ,  H01L33/647 ,  H01L2224/73265 ,  H01L2933/0016 ,  H01L2933/0033 ,  H01L2933/0066 ,  H01L2933/0075

Abstract: Solid-state transducers (“SSTs”) and vertical high voltage SSTs having buried contacts are disclosed herein. An SST die in accordance with a particular embodiment can include a transducer structure having a first semiconductor material at a first side of the transducer structure, and a second semiconductor material at a second side of the transducer structure. The SST can further include a plurality of first contacts at the first side and electrically coupled to the first semiconductor material, and a plurality of second contacts extending from the first side to the second semiconductor material and electrically coupled to the second semiconductor material. An interconnect can be formed between at least one first contact and one second contact. The interconnects can be covered with a plurality of package materials.

Abstract translation: 本文公开了固态换能器（“SST”）和具有埋地触点的垂直高压SST。 根据特定实施例的SST管芯可以包括在换能器结构的第一侧具有第一半导体材料的换能器结构，以及在换能器结构的第二侧的第二半导体材料。 SST还可以包括在第一侧上的多个第一触点并且电耦合到第一半导体材料，以及从第一侧延伸到第二半导体材料并电耦合到第二半导体材料的多个第二触点。 可以在至少一个第一接触和一个第二接触之间形成互连。 互连可以被多个封装材料覆盖。

公开(公告)号：US20250072170A1

公开(公告)日：2025-02-27

申请号：US18943717

申请日：2024-11-11

Applicant: Micron Technology, Inc.

Inventor： Martin F. Schubert ,  Vladimir Odnoblyudov

IPC: H01L33/38 ,  H01L33/00 ,  H01L33/06 ,  H01L33/36 ,  H01L33/40 ,  H01L33/42 ,  H01L33/62

Abstract: Various embodiments of light emitting dies and solid state lighting (“SSL”) devices with light emitting dies, assemblies, and methods of manufacturing are described herein. In one embodiment, a light emitting die includes an SSL structure configured to emit light in response to an applied electrical voltage, a first electrode carried by the SSL structure, and a second electrode spaced apart from the first electrode of the SSL structure. The first and second electrode are configured to receive the applied electrical voltage. Both the first and second electrodes are accessible from the same side of the SSL structure via wirebonding.

公开(公告)号：US12206046B2

公开(公告)日：2025-01-21

申请号：US18439652

申请日：2024-02-12

Applicant: Micron Technology, Inc.

Inventor： Vladimir Odnoblyudov ,  Martin F. Schubert

IPC: H01L21/00 ,  H01L21/02 ,  H01L33/00 ,  H01L33/08 ,  H01L33/12 ,  H01L33/20 ,  H01L33/38 ,  H01L33/48 ,  H01L33/62

Abstract: Various embodiments of SST dies and solid state lighting (“SSL”) devices with SST dies, assemblies, and methods of manufacturing are described herein. In one embodiment, a SST die includes a substrate material, a first semiconductor material and a second semiconductor material on the substrate material, an active region between the first semiconductor material and the second semiconductor material, and a support structure defined by the substrate material. In some embodiments, the support structure has an opening that is vertically aligned with the active region.

公开(公告)号：US20240234646A1

公开(公告)日：2024-07-11

申请号：US18444528

申请日：2024-02-16

Applicant: Micron Technology, Inc.

Inventor： Martin F. Schubert ,  Vladimir Odnoblyudov

IPC: H01L33/50 ,  H01L33/32 ,  H01L33/46

CPC classification number: H01L33/50 ,  H01L33/46 ,  H01L33/32

Abstract: Solid state transducer (“SST”) devices with selective wavelength reflectors and associated systems and methods are disclosed herein. In several embodiments, for example, an SST device can include a first emitter configured to emit emissions having a first wavelength and a second emitter configured to emit emissions having a second wavelength different from the first wavelength. The first and second emitters can be SST structures and/or converter materials. The SST device can further include a selective wavelength reflector between the first and second emitters. The selective wavelength reflector can be configured to at least substantially transmit emissions having the first wavelength and at least substantially reflect emissions having the second wavelength.

公开(公告)号：US20240186448A1

公开(公告)日：2024-06-06

申请号：US18439652

申请日：2024-02-12

Applicant: Micron Technology, Inc.

Inventor： Vladimir Odnoblyudov ,  Martin F. Schubert

IPC: H01L33/20 ,  H01L21/02 ,  H01L33/00 ,  H01L33/08 ,  H01L33/12 ,  H01L33/38 ,  H01L33/48 ,  H01L33/62

CPC classification number: H01L33/20 ,  H01L21/02104 ,  H01L33/0075 ,  H01L33/0093 ,  H01L33/08 ,  H01L33/12 ,  H01L33/38 ,  H01L33/483 ,  H01L33/62 ,  H01L2933/0016

Abstract: Various embodiments of SST dies and solid state lighting (“SSL”) devices with SST dies, assemblies, and methods of manufacturing are described herein. In one embodiment, a SST die includes a substrate material, a first semiconductor material and a second semiconductor material on the substrate material, an active region between the first semiconductor material and the second semiconductor material, and a support structure defined by the substrate material. In some embodiments, the support structure has an opening that is vertically aligned with the active region.

公开(公告)号：US11901487B2

公开(公告)日：2024-02-13

申请号：US18045331

申请日：2022-10-10

Applicant: Micron Technology, Inc.

Inventor： Vladimir Odnoblyudov ,  Martin F. Schubert

IPC: H01L21/00 ,  H01L33/20 ,  H01L33/08 ,  H01L21/02 ,  H01L33/38 ,  H01L33/00 ,  H01L33/12 ,  H01L33/48 ,  H01L33/62

CPC classification number: H01L33/20 ,  H01L21/02104 ,  H01L33/0075 ,  H01L33/0093 ,  H01L33/08 ,  H01L33/12 ,  H01L33/38 ,  H01L33/483 ,  H01L33/62 ,  H01L2933/0016

Abstract: Various embodiments of SST dies and solid state lighting (“SSL”) devices with SST dies, assemblies, and methods of manufacturing are described herein. In one embodiment, a SST die includes a substrate material, a first semiconductor material and a second semiconductor material on the substrate material, an active region between the first semiconductor material and the second semiconductor material, and a support structure defined by the substrate material. In some embodiments, the support structure has an opening that is vertically aligned with the active region.