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    METHOD OF IMPROVING INITIATION LAYER FOR LOW-K DIELECTRIC FILM BY DIGITAL LIQUID FLOW METER
    62.
    发明申请
    METHOD OF IMPROVING INITIATION LAYER FOR LOW-K DIELECTRIC FILM BY DIGITAL LIQUID FLOW METER 有权
    通过数字液体流量计改善低K电介质膜的起始层的方法

    公开(公告)号：US20080119058A1

    公开(公告)日：2008-05-22

    申请号：US11562021

    申请日：2006-11-21

    申请人： DUSTIN W. HO ,  Juan Carlos Rocha-Alvarez ,  Alexandros T. Demos ,  Kelvin Chan ,  Nagarajan Rajagopalan ,  Visweswaren Sivaramakrishnan

    发明人： DUSTIN W. HO ,  Juan Carlos Rocha-Alvarez ,  Alexandros T. Demos ,  Kelvin Chan ,  Nagarajan Rajagopalan ,  Visweswaren Sivaramakrishnan

    IPC分类号： H01L21/312

    CPC分类号： H01L21/31695 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/0234 ,  H01L21/02348 ,  H01L21/02351

    摘要： A method for depositing a low dielectric constant film by flowing a oxidizing gas into a processing chamber, flowing an organosilicon compound from a bulk storage container through a digital liquid flow meter at an organosilicon flow rate to a vaporization injection valve, vaporizing the organosilicon compound and flowing the organosilicon compound and a carrier gas into the processing chamber, maintaining the organosilicon flow rate to deposit an initiation layer, flowing a porogen compound from a bulk storage container through a digital liquid flow meter at a porogen flow rate to a vaporization injection valve, vaporizing the porogen compound and flowing the porogen compound and a carrier gas into the processing chamber, increasing the organosilicon flow rate and the porogen flow rate while depositing a transition layer, and maintaining a second organosilicon flow rate and a second porogen flow rate to deposit a porogen containing organosilicate dielectric layer.

    摘要翻译： 一种通过使氧化气体流入处理室来沉积低介电常数膜的方法，使有机硅化合物从大容量储存容器通过数字液体流量计以有机硅流速流动到汽化喷射阀，汽化有机硅化合物和 使有机硅化合物和载气流入处理室，保持有机硅流速沉积起始层，使致孔剂化合物从大容量储存容器通过数字液体流量计以致孔剂流速流动到蒸发喷射阀， 蒸发致孔剂化合物并使致孔剂化合物和载气流入处理室，同时沉积过渡层而增加有机硅流速和致孔剂流速，并保持第二有机硅流速和第二致孔剂流速以沉积 含致孔剂的有机硅酸盐介电层。

    Apparatus for reducing entrapment of foreign matter along a moveable shaft of a substrate support
    64.
    发明授权
    Apparatus for reducing entrapment of foreign matter along a moveable shaft of a substrate support 失效
    用于减少沿着衬底支撑件的可移动轴夹带异物的装置

    公开(公告)号：US07279049B2

    公开(公告)日：2007-10-09

    申请号：US10775769

    申请日：2004-02-05

    申请人： Andrzej Kaszuba ,  Sophia M. Velastegui ,  Visweswaren Sivaramakrishnan ,  Pyongwon Yim ,  Mario David Silvetti ,  Tom K. Cho ,  Indrajit Lahiri ,  Surinder S. Bedi

    发明人： Andrzej Kaszuba ,  Sophia M. Velastegui ,  Visweswaren Sivaramakrishnan ,  Pyongwon Yim ,  Mario David Silvetti ,  Tom K. Cho ,  Indrajit Lahiri ,  Surinder S. Bedi

    IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306

    CPC分类号： H01L21/67126 ,  C23C16/4401

    摘要： In one embodiment, the invention is a guard ring for reducing particle entrapment along a moveable shaft of a substrate support. In one embodiment, the guard ring comprises a substantially annular guard ring positioned within a step formed in a sleeve that circumscribes the shaft. The guard ring is positioned to substantially seal a gap separating the shaft from the sleeve, so that the amount of particles and foreign matter that travel within or become trapped in the gap is substantially reduced. In another embodiment, a guard ring comprises a base portion having an inner perimeter and an outer perimeter, a first flange coupled to the inner perimeter, a second flange coupled to the outer perimeter, and a continuous channel separating the first flange from the second flange. The first flange is adapted to function as a spring that accommodates displacement of the shaft.

    摘要翻译： 在一个实施例中，本发明是用于减少沿基板支撑件的可移动轴的颗粒捕获的保护环。 在一个实施例中，保护环包括大致环形的保护环，其定位在形成在套筒内的步骤中，该套筒环绕轴。 保护环被定位成基本上密封将轴与套筒分开的间隙，使得在间隙内行进或被捕获在间隙中的颗粒和异物的量显着减少。 在另一个实施例中，保护环包括具有内周边和外周边的基部，连接到内周边的第一凸缘，联接到外周边的第二凸缘和将第一凸缘与第二凸缘分开的连续通道 。 第一凸缘适于用作容纳轴的位移的弹簧。

    Method and apparatus for forming a thin polymer layer on an integrated circuit structure
    67.
    发明授权
    Method and apparatus for forming a thin polymer layer on an integrated circuit structure 失效
    在集成电路结构上形成薄聚合物层的方法和装置

    公开(公告)号：US06663713B1

    公开(公告)日：2003-12-16

    申请号：US08734978

    申请日：1996-10-22

    申请人： Stuardo A. Robles ,  Visweswaren Sivaramakrishnan ,  Bang C. Nguyen ,  Gayathri Rao ,  Gary Fong ,  Vicente Lam ,  Peter Wai-Man Lee ,  Mei Chang

    发明人： Stuardo A. Robles ,  Visweswaren Sivaramakrishnan ,  Bang C. Nguyen ,  Gayathri Rao ,  Gary Fong ,  Vicente Lam ,  Peter Wai-Man Lee ,  Mei Chang

    IPC分类号： C23C1600

    CPC分类号： H01L21/02118 ,  B05D1/60 ,  C23C16/44 ,  C23C16/452 ,  H01L21/02271 ,  H01L21/02301 ,  H01L21/312

    摘要： A method and apparatus are disclosed for forming thin polymer layers on semiconductor substrates. In one embodiment, the method and apparatus include the vaporization of stable di-pxylylene, the pyrolytic conversion of such gaseous dimer material into reactive monomers, and the optional blending of the resulting gaseous p-xylylene monomers with one or more polymerizable materials in gaseous form capable of copolymerizing with the p-xylylene monomers to form a low dielectric constant polymerized parylene material. An apparatus is also disclosed which provides for the distribution of the polymerizable gases into the deposition chamber, for cooling the substrate down to a temperature at which the gases will condense to form a polymerized dielectric material, for heating the walls of the deposition chamber to inhibit formation and accumulation of polymerized residues thereon, and for recapturing unreacted monomeric vapors exiting the deposition chamber. An apparatus is further provided downstream of the deposition chamber to control both the flow rate or residence time of the reactive monomer in the deposition chamber as well as to control the pressure of the deposition chamber. Provision is further made for an electrical bias to permit the apparatus to function as a plasma etch chamber, for in situ plasma cleaning of the chamber between depositions, for enhancing cracking of polymerizable precursor material, for heating the walls of the chamber and for providing heat sufficient to prevent polymerization in the gas phase.

    摘要翻译： 公开了用于在半导体衬底上形成薄聚合物层的方法和装置。 在一个实施方案中，所述方法和装置包括稳定的二 - 二甲苯的蒸发，将这种气态二聚体材料热解转化成反应性单体，以及任选地将所得气态对二甲苯单体与一种或多种气态形式的可聚合材料 能够与对二甲苯单体共聚以形成低介电常数的聚对二甲苯聚合物。 还公开了一种设备，其提供可聚合气体分布到沉积室中，用于将衬底冷却至气体冷凝以形成聚合电介质材料的温度，以加热沉积室的壁以抑制 在其上聚合的残余物的形成和积累，以及用于重新捕获离开沉积室的未反应的单体蒸气。 还在沉积室的下游设置一个装置，以控制反应性单体在沉积室中的流速或停留时间以及控制沉积室的压力。 进一步提供电偏压以允许该装置用作等离子体蚀刻室，用于沉积之间的腔室的原位等离子体清洁，用于增强可聚合前体材料的裂化，用于加热室的壁并提供热量 足以防止气相中的聚合。

    In-situ liquid flow rate estimation and verification by sonic flow method
    68.
    发明授权
    In-situ liquid flow rate estimation and verification by sonic flow method 失效
    声流法原位液体流量估算与验证

    公开(公告)号：US5968588A

    公开(公告)日：1999-10-19

    申请号：US819674

    申请日：1997-03-17

    申请人： Visweswaren Sivaramakrishnan ,  Yen-Kun Wang ,  Fong Chang ,  Thanh Pham ,  Jeff Plante

    发明人： Visweswaren Sivaramakrishnan ,  Yen-Kun Wang ,  Fong Chang ,  Thanh Pham ,  Jeff Plante

    IPC分类号： C23C16/448 ,  C23C16/52 ,  C23C16/00

    CPC分类号： C23C16/52 ,  C23C16/4481

    摘要： An apparatus for in-situ control of the flow of a liquid precursor into a deposition chamber comprises a liquid injection system having a liquid injection outlet connected to a chamber inlet line upstream of the deposition chamber. The liquid injection system includes a liquid precursor supply, a carrier gas supply, a vaporizer, and a controller managing flows of the liquid precursor and carrier gas to the chamber. A bypass line is connected to the chamber inlet line and includes a bypass valve, a sonic orifice, and a pressure gauge upstream of the sonic orifice. To calibrate the flow of the liquid precursor, a flow of carrier gas is directed into the bypass line at a carrier gas sonic flow rate. A first steady state pressure is measured with the pressure gauge. The liquid precursor is vaporized and directed to the flow of carrier gas into the bypass line. A second steady state pressure is measured with the pressure gauge. Calibration information is computed using the first steady state pressure and second steady state pressure based on sonic flow theory. The calibration information is used to calibrate the controller to correct deviations in the liquid flow rate and achieve a target liquid precursor flow rate for improving wafer uniformity.

    摘要翻译： 用于原位控制液体前体进入沉积室的装置包括液体注射系统，其具有连接到沉积室上游的室入口管的液体注入口。 液体注射系统包括液体前体供应源，载气供应器，蒸发器和控制液体前体和载气流到腔室的控制器。 旁路管路连接到腔室入口管线，并且包括旁通阀，声波孔口和声波孔口上游的压力计。 为了校准液体前体的流动，以载气声音流速将载气流引导到旁路管线中。 用压力表测量第一稳态压力。 液体前体蒸发并引导到载气流入旁通管线。 用压力表测量第二稳态压力。 基于声流理论，使用第一稳态压力和第二稳态压力计算校准信息。 校准信息用于校准控制器以校正液体流速中的偏差，并实现目标液体前体流速以改善晶片均匀性。

    Integrated method and system for manufacturing monolithic panels of crystalline solar cells
    69.
    发明授权
    Integrated method and system for manufacturing monolithic panels of crystalline solar cells 有权
    晶体太阳能电池单块面板的集成方法和系统

    公开(公告)号：US08900399B2

    公开(公告)日：2014-12-02

    申请号：US13050807

    申请日：2011-03-17

    申请人： Tirunelveli S. Ravi ,  Ananda H. Kumar ,  Ashish Asthana ,  Kyle Ross Tantiwong ,  Visweswaren Sivaramakrishnan

    发明人： Tirunelveli S. Ravi ,  Ananda H. Kumar ,  Ashish Asthana ,  Kyle Ross Tantiwong ,  Visweswaren Sivaramakrishnan

    IPC分类号： C23F1/00 ,  H01L31/18 ,  H01L31/048 ,  H01L31/068

    CPC分类号： H01L31/1876 ,  H01L21/68728 ,  H01L31/048 ,  H01L31/068 ,  H01L31/1804 ,  H01L31/1892 ,  Y02E10/50 ,  Y02E10/547 ,  Y02P70/521

    摘要： An anodic etching system for simultaneously etching a multiplicity of substrates comprises: an etching tank for containing therein an etchant solution; a power supply connected between a first electrode and a second electrode, the first electrode and the second electrode being immersible in the etchant solution and positioned at opposite ends of the tank; and a plurality of support plates serially arranged between the first electrode and the second electrode and sealed to walls of the tank, wherein each of the plurality of support plates is configured to support at least one of the multiplicity of substrates, and wherein any consecutive pair of the plurality of support plates defines an isolated volume of the tank for containing a portion of the etchant solution. The plurality of support plates may be susceptors configured for holding the multiplicity of substrates in a chemical vapor deposition tool.

    摘要翻译： 用于同时蚀刻多个基板的阳极蚀刻系统包括：用于在其中容纳蚀刻剂溶液的蚀刻槽; 连接在第一电极和第二电极之间的电源，所述第一电极和所述第二电极浸入所述蚀刻液中并位于所述槽的相对端; 以及多个支撑板，其串联地布置在所述第一电极和所述第二电极之间并且密封到所述罐的壁，其中所述多个支撑板中的每一个被配置为支撑所述多个基板中的至少一个，并且其中， 所述多个支撑板限定了用于容纳蚀刻剂溶液的一部分的罐的隔离体积。 多个支撑板可以是构造成用于将多个基板保持在化学气相沉积工具中的基座。