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公开(公告)号:US20190339908A1
公开(公告)日:2019-11-07
申请号:US16405479
申请日:2019-05-07
Applicant: Rambus Inc.
Inventor: Frederick A. Ware , Craig E. Hampel , Wayne S. Richardson , Chad A. Bellows , Lawrence Lai
IPC: G06F3/06 , G11C8/06 , G11C7/10 , G11C11/4076 , G11C7/22 , G11C11/4097
Abstract: A micro-threaded memory device. A plurality of storage banks are provided, each including a plurality of rows of storage cells and having an access restriction in that at least a minimum access time interval must transpire between successive accesses to a given row of the storage cells. Transfer control circuitry is provided to transfer a first amount of data between the plurality of storage banks and an external signal path in response to a first memory access request, the first amount of data being less than a product of the external signal path bandwidth and the minimum access time interval.
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公开(公告)号:US10431290B2
公开(公告)日:2019-10-01
申请号:US16139636
申请日:2018-09-24
Applicant: Rambus Inc.
Inventor: Wayne F. Ellis , Wayne S. Richardson , Akash Bansal , Frederick A. Ware , Lawrence Lai , Kishore Ven Kasamsetty
IPC: G11C8/00 , G11C11/406 , G11C7/02 , G11C7/20 , G11C11/4072 , G11C29/02 , G06F1/3234 , G11C11/4074
Abstract: In one embodiment, a memory device includes a memory core and input receivers to receive commands and data. The memory device also includes a register to store a value that indicates whether a subset of the input receivers are powered down in response to a control signal. A memory controller transmits commands and data to the memory device. The memory controller also transmits the value to indicate whether a subset of the input receivers of the memory device are powered down in response to the control signal. In addition, in response to a self-fresh command, the memory device defers entry into a self-refresh operation until receipt of the control signal that is received after receiving the self-refresh command.
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公开(公告)号:US20190206458A1
公开(公告)日:2019-07-04
申请号:US16222909
申请日:2018-12-17
Applicant: Rambus Inc.
Inventor: Ian Shaeffer , Lawrence Lai , Fan Ho , David A. Secker , Wayne S. Richardson , Akash Bansal , Brian S. Leibowitz , Kyung Suk Oh
CPC classification number: G11C8/12 , G11C5/02 , G11C5/04 , G11C5/06 , G11C5/063 , G11C7/1012 , G11C7/1045 , G11C8/18 , H01L24/32 , H01L24/48 , H01L24/49 , H01L24/73 , H01L25/0657 , H01L2224/16225 , H01L2224/32145 , H01L2224/32225 , H01L2224/45099 , H01L2224/48095 , H01L2224/48227 , H01L2224/48471 , H01L2224/49171 , H01L2224/49433 , H01L2224/73265 , H01L2225/0651 , H01L2924/00012 , H01L2924/00014 , H01L2924/15311 , H01L2924/181 , H01L2924/00
Abstract: A memory device comprising a programmable command-and-address (CA) interface and/or a programmable data interface is described. In an operational mode, two or more CA interfaces may be active. In another operational mode, at least one, but not all, CA interfaces may be active. In an operational mode, all of the data interfaces may be active. In another operational mode, at least one, but not all, data interfaces may be active. The memory device can include circuitry to select: an operational mode; a sub-mode within an operational mode; one or more CA interfaces as the active CA interface(s); a main CA interface from multiple active CA interfaces; and/or one or more data interfaces as the active data interfaces. The circuitry may perform these selection(s) based on one or more bits in one or more registers and/or one or more signals received on one or more pins.
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公开(公告)号:US10209922B2
公开(公告)日:2019-02-19
申请号:US14806788
申请日:2015-07-23
Applicant: Rambus Inc.
Inventor: Liji Gopalakrishnan , Vlad Fruchter , Lawrence Lai , Pradeep Batra , Steven C. Woo , Wayne Frederick Ellis
Abstract: A memory space of a module connected to a memory controller via a memory interface may be used as a command buffer. Commands received by the module via the command buffer are executed by the module. The memory controller may write to the command buffer out-of-order. The memory controller may delay or eliminate writes to the command buffer. Tags associated with commands are used to specify the order commands are executed. A status buffer in the memory space of the module is used to communicate whether commands have been received or executed. Information received via the status buffer can be used as a basis for a determination to re-send commands to the command buffer.
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公开(公告)号:US20190027210A1
公开(公告)日:2019-01-24
申请号:US16139636
申请日:2018-09-24
Applicant: Rambus Inc.
Inventor: Wayne F. Ellis , Wayne S. Richardson , Akash Bansal , Frederick A. Ware , Lawrence Lai , Kishore Ven Kasamsetty
IPC: G11C11/406 , G11C11/4074 , G06F1/32 , G11C29/02 , G11C7/02 , G11C11/4072 , G11C7/20
Abstract: In one embodiment, a memory device includes a memory core and input receivers to receive commands and data. The memory device also includes a register to store a value that indicates whether a subset of the input receivers are powered down in response to a control signal. A memory controller transmits commands and data to the memory device. The memory controller also transmits the value to indicate whether a subset of the input receivers of the memory device are powered down in response to the control signal. In addition, in response to a self-fresh command, the memory device defers entry into a self-refresh operation until receipt of the control signal that is received after receiving the self-refresh command.
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公开(公告)号:US20180226120A1
公开(公告)日:2018-08-09
申请号:US15855535
申请日:2017-12-27
Applicant: Rambus Inc.
Inventor: Wayne F. Ellis , Wayne S. Richardson , Akash Bansal , Frederick A. Ware , Lawrence Lai , Kishore Ven Kasamsetty
IPC: G11C11/406 , G11C11/4074
CPC classification number: G11C11/40615 , G06F1/3234 , G11C7/02 , G11C7/20 , G11C11/4072 , G11C11/4074 , G11C29/022 , G11C29/028
Abstract: In one embodiment, a memory device includes a clock receiver to receive a clock signal and a plurality of mode registers to store parameter information associated with a plurality of operating clock frequencies of the clock signal. The plurality of clock frequencies include a first clock frequency and a second clock frequency. The memory device also includes a command interface to receive commands synchronously with respect to the clock signal. The command interface receives a command that instructs the DRAM device to change operation from the first clock frequency to the second clock frequency.
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公开(公告)号:US09921751B2
公开(公告)日:2018-03-20
申请号:US15000306
申请日:2016-01-19
Applicant: Rambus Inc.
Inventor: Richard E. Perego , Pradeep Batra , Steven Woo , Lawrence Lai , Chi-Ming Yeung
IPC: G06F12/02 , G06F3/06 , G06F12/10 , G06F13/38 , G06F12/06 , G11C7/10 , G11C14/00 , G06F12/00 , G06F13/42
CPC classification number: G06F3/061 , G06F3/0629 , G06F3/0685 , G06F12/00 , G06F12/0246 , G06F12/0638 , G06F12/10 , G06F13/385 , G06F13/4239 , G06F2212/2022 , G06F2212/205 , G06F2212/251 , G06F2212/7201 , G06F2212/7206 , G11C7/1072 , G11C14/0018 , Y02D10/14 , Y02D10/151
Abstract: A memory system includes a CPU that communicates commands and addresses to a main-memory module. The module includes a buffer circuit that relays commands and data between the CPU and the main memory. The memory module additionally includes an embedded processor that shares access to main memory in support of peripheral functionality, such as graphics processing, for improved overall system performance. The buffer circuit facilitates the communication of instructions and data between CPU and the peripheral processor in a manner that minimizes or eliminates the need to modify CPU, and consequently reduces practical barriers to the adoption of main-memory modules with integrated processing power.
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公开(公告)号:US09898400B2
公开(公告)日:2018-02-20
申请号:US15497126
申请日:2017-04-25
Applicant: Rambus Inc.
Inventor: Thomas A. Sheffler , Lawrence Lai , Liang Peng , Bohuslav Rychlik
CPC classification number: G06F12/023 , G06F2212/2024 , G11C7/1006 , G11C7/1039 , G11C7/22 , G11C8/10 , G11C2207/107
Abstract: A memory access command, column address and plurality of write data values are received within an integrated-circuit memory chip via external signaling links. In response to the memory access command, the integrated-circuit memory chip (i) decodes the column address to select address-specified sense amplifiers from among a plurality of sense amplifiers that constitute a sense amplifier bank, (ii) reads first data, constituted by a plurality of read data values, out of the address-specified sense amplifiers, and (iii) overwrites the first data within the address-specified sense amplifiers with second data constituted by one or more of the write data values and by one or more of the read data values.
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公开(公告)号:US20170293552A1
公开(公告)日:2017-10-12
申请号:US15497126
申请日:2017-04-25
Applicant: Rambus Inc.
Inventor: Thomas A. Sheffler , Lawrence Lai , Liang Peng , Bohuslav Rychlik
CPC classification number: G06F12/023 , G06F2212/2024 , G11C7/1006 , G11C7/1039 , G11C7/22 , G11C8/10 , G11C2207/107
Abstract: A memory access command, column address and plurality of write data values are received within an integrated-circuit memory chip via external signaling links. In response to the memory access command, the integrated-circuit memory chip (i) decodes the column address to select address-specified sense amplifiers from among a plurality of sense amplifiers that constitute a sense amplifier bank, (ii) reads first data, constituted by a plurality of read data values, out of the address-specified sense amplifiers, and (iii) overwrites the first data within the address-specified sense amplifiers with second data constituted by one or more of the write data values and by one or more of the read data values.
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公开(公告)号:US09734879B2
公开(公告)日:2017-08-15
申请号:US14813028
申请日:2015-07-29
Applicant: Rambus Inc.
Inventor: Ian Shaeffer , Lawrence Lai , Fan Ho , David A. Secker , Wayne S. Richardson , Akash Bansal , Brian S. Leibowitz , Kyung Suk Oh
CPC classification number: G11C8/12 , G11C5/02 , G11C5/04 , G11C5/06 , G11C5/063 , G11C7/1012 , G11C7/1045 , G11C8/18 , H01L24/32 , H01L24/48 , H01L24/49 , H01L24/73 , H01L25/0657 , H01L2224/16225 , H01L2224/32145 , H01L2224/32225 , H01L2224/45099 , H01L2224/48095 , H01L2224/48227 , H01L2224/48471 , H01L2224/49171 , H01L2224/49433 , H01L2224/73265 , H01L2225/0651 , H01L2924/00012 , H01L2924/00014 , H01L2924/15311 , H01L2924/181 , H01L2924/00
Abstract: A memory device comprising a programmable command-and-address (CA) interface and/or a programmable data interface is described. In an operational mode, two or more CA interfaces may be active. In another operational mode, at least one, but not all, CA interfaces may be active. In an operational mode, all of the data interfaces may be active. In another operational mode, at least one, but not all, data interfaces may be active. The memory device can include circuitry to select: an operational mode; a sub-mode within an operational mode; one or more CA interfaces as the active CA interface(s); a main CA interface from multiple active CA interfaces; and/or one or more data interfaces as the active data interfaces. The circuitry may perform these selection(s) based on one or more bits in one or more registers and/or one or more signals received on one or more pins.
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