Manufacturing method of semiconductor memory device

    公开(公告)号:US10170630B2

    公开(公告)日:2019-01-01

    申请号:US14735687

    申请日:2015-06-10

    Inventor: Yasuyuki Arai

    Abstract: To provide a highly integrated semiconductor memory device. To provide a semiconductor memory device which can hold stored data even when power is not supplied. To provide a semiconductor memory device which has a large number of write cycles. The degree of integration of a memory cell array is increased by forming a memory cell including two transistors and one capacitor which are arranged three-dimensionally. The electric charge accumulated in the capacitor is prevented from being leaking by forming a transistor for controlling the amount of electric charge of the capacitor in the memory cell using a wide-gap semiconductor having a wider band gap than silicon. Accordingly, a semiconductor memory device which can hold stored data even when power is not supplied can be provided.

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