公开(公告)号：US20090034157A1

公开(公告)日：2009-02-05

申请号：US12161901

申请日：2007-03-06

申请人： Ryuichi Saito ,  Koichi Shigeno ,  Hiroshi Kagata

发明人： Ryuichi Saito ,  Koichi Shigeno ,  Hiroshi Kagata

IPC分类号： H01G4/06

CPC分类号： H05K1/0306 ,  H01G4/0085 ,  H01G4/129 ,  H01G4/30 ,  H03H7/0115 ,  H03H2001/0085 ,  H05K3/4611 ,  H05K3/4629 ,  Y10T29/435

摘要： The present invention relates to a ceramic laminated device including a dielectric ceramic and an Ag electrode. In a dielectric ceramic that can be sintered at low temperatures and has a high dielectric constant and Q value, reactivity between the ceramic and Ag during sintering is suppressed low and segregation of specific elements in the proximity of the electrode is controlled. Thus, a filter having a high Q value and low loss is produced stably. For this purpose, in a ceramic laminated body including at least a ceramic and a Si-containing glass, a ratio of A/B, i.e. a ratio of a Si element concentration (A) within a range at a distance of 5 μm or smaller from the Ag electrode to a Si element concentration (B) within a range at a distance larger than 5 μm from the Ag electrode, is set equal to or smaller than 2.

摘要翻译： 本发明涉及包括电介质陶瓷和Ag电极的陶瓷层压装置。 在可以在低温下烧结且具有高介电常数和Q值的电介质陶瓷中，抑制烧结期间陶瓷与Ag之间的反应性，并且控制电极附近的特定元素的偏析。 因此，稳定地产生具有高Q值和低损耗的滤波器。 为此，在至少包含陶瓷和含Si玻璃的陶瓷层叠体中，A / B的比例即Si元素浓度（A）在5μm以下的范围内的比例 从Ag电极到距离Ag电极的距离大于5um的范围内的Si元素浓度（B）设定为2以下。

公开(公告)号：US20080074819A1

公开(公告)日：2008-03-27

申请号：US11979874

申请日：2007-11-09

申请人： Masataka Sasaki ,  Katsumi Ishikawa ,  Ryuichi Saito ,  Koichi Suda ,  Katsuaki Takahashi

发明人： Masataka Sasaki ,  Katsumi Ishikawa ,  Ryuichi Saito ,  Koichi Suda ,  Katsuaki Takahashi

IPC分类号： H02H3/20

CPC分类号： B60W20/00 ,  B60K6/485 ,  B60L3/003 ,  B60W10/08 ,  H02H7/20 ,  H02M1/32 ,  H03K17/0828 ,  H03K17/168 ,  Y02T10/6226

摘要： A collector voltage of a power management semiconductor device is detected by a first comparator, and when the detected collector voltage exceeds a first reference voltage, the first comparator outputs a first detection signal. Furthermore, a gate voltage of the power management semiconductor device is detected by a second comparator, and when the detected gate voltage exceeds a second reference voltage, the second comparator outputs a second detection signal. The second reference voltage is a minimum gate voltage for feeding a rated power to the power management semiconductor device or over, and less than a line power voltage of a drive circuit of the power management semiconductor device. When both the first detection signal and second detection signal are being outputted, the gate voltage is reduced by a gate voltage reduction means so as to protect the power management semiconductor device from overcurrent and overvoltage.

摘要翻译： 功率管理半导体器件的集电极电压由第一比较器检测，并且当检测到的集电极电压超过第一参考电压时，第一比较器输出第一检测信号。 此外，由第二比较器检测功率管理半导体器件的栅极电压，并且当检测到的栅极电压超过第二参考电压时，第二比较器输出第二检测信号。 第二参考电压是用于向功率管理半导体器件提供额定功率或超过功率管理半导体器件的驱动电路的线电源电压的最小栅极电压。 当输出第一检测信号和第二检测信号两者时，通过栅极电压降低装置降低栅极电压，以保护功率管理半导体器件免于过电流和过电压。

公开(公告)号：US20050067177A1

公开(公告)日：2005-03-31

申请号：US10952476

申请日：2004-09-29

申请人： Ryuichi Saito ,  Hiroshi Kagata ,  Masaaki Katsumata

发明人： Ryuichi Saito ,  Hiroshi Kagata ,  Masaaki Katsumata

IPC分类号： H01L23/12 ,  H01L21/48 ,  H01L21/56 ,  H01L21/60 ,  H01L23/13 ,  H01L23/31 ,  H01L23/498 ,  H01L25/065 ,  H01L25/16 ,  H03H9/10 ,  H05K1/03 ,  H05K3/28 ,  H05K3/30 ,  H01L23/28

CPC分类号： H01L25/16 ,  H01L21/4857 ,  H01L21/563 ,  H01L23/13 ,  H01L23/3121 ,  H01L23/49822 ,  H01L24/81 ,  H01L2224/05001 ,  H01L2224/05023 ,  H01L2224/05568 ,  H01L2224/16225 ,  H01L2224/16235 ,  H01L2224/32225 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2224/81801 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01057 ,  H01L2924/01075 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15151 ,  H01L2924/15192 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/19105 ,  H03H9/0542 ,  H03H9/0557 ,  H03H9/1085 ,  H05K1/0306 ,  H05K3/284 ,  H05K3/305 ,  H05K2201/09036 ,  H05K2201/10636 ,  H05K2201/10674 ,  Y02P70/611 ,  Y02P70/613 ,  Y10T29/43 ,  Y10T29/435 ,  Y10T29/49126 ,  Y10T29/49163 ,  Y10T29/49165 ,  Y10T29/49171 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2224/05099

摘要： A module includes a ceramic substrate, first and second electrodes provided on the ceramic substrate, a component having third and fourth electrodes connected to the first and second electrodes, respectively, and a resin filled in a space between the component and the ceramic substrate. The ceramic substrate has a surface thereof having a recess formed therein. The first and second electrodes are provided on the surface of the ceramic substrate so that the recess is located between the first and second electrodes. The component is located over the recess and spaced from the ceramic substrate with a space including the recess. The space including the recess is filled with the resin. The module allows each component to be surface mounted at higher bonding strength, thus preventing short-circuit between the electrodes on the substrate and improving the operation reliability.

摘要翻译： 模块包括陶瓷基板，设置在陶瓷基板上的第一和第二电极，分别具有连接到第一和第二电极的第三和第四电极以及填充在部件和陶瓷基板之间的空间中的树脂。 陶瓷基板的表面具有形成在其中的凹部。 第一和第二电极设置在陶瓷基板的表面上，使得凹槽位于第一和第二电极之间。 所述部件位于所述凹部之上并与所述陶瓷基板间隔开并具有包括所述凹部的空间。 包含凹部的空间用树脂填充。 该模块允许每个部件以更高的接合强度进行表面安装，从而防止基板上的电极之间的短路并提高操作可靠性。

公开(公告)号：US06623845B1

公开(公告)日：2003-09-23

申请号：US09763109

申请日：2001-04-20

申请人： Hidenori Katsumura ,  Ryuichi Saito ,  Masahiro Hiraka

发明人： Hidenori Katsumura ,  Ryuichi Saito ,  Masahiro Hiraka

IPC分类号： B32B1700

CPC分类号： C03C3/095 ,  C03C14/004 ,  Y10T428/12528 ,  Y10T428/24926

摘要： A multilayer LC composite component includes a glass-ceramic composition and internal electrodes containing silver or copper as a main component. The multilayer LC composite component is outstanding in mounting reliability particularly to a resin substrate, easy to manufacture, and has excellent electric characteristics at high frequency. The glass-ceramic composition includes 45 to 35 wt. % of forsterite powder and 55 to 65 wt. % of glass composite powder, and compositions of the glass composite powder include 40 to 50 wt. % of SiO2, 30 to 40 wt. % of BaO, 3 to 8 wt. % of Al2O3, 8 to 12 wt. % of La2O3, and 3 to 6 wt. % of B2O3. It is high in flexural strength, moderately high in coefficient of thermal expansion, easy to use in manufacturing a greensheet, and densely sintered at a temperature of less than 950 degrees C.

摘要翻译： 多层LC复合部件包括玻璃 - 陶瓷组合物和含有银或铜作为主要成分的内部电极。 多层LC复合部件在树脂基板的安装可靠性方面突出，易于制造，并且在高频下具有优异的电特性。 玻璃 - 陶瓷组合物包含45至35wt。 ％的镁橄榄石粉和55〜65wt。 ％的玻璃复合粉末，玻璃复合粉末的组成为40〜50wt。 SiO 2％，30〜40wt。 ％的BaO，3〜8wt。 ％的Al 2 O 3，8〜12wt。 ％的La 2 O 3和3〜6wt。 ％的B2O3。 弯曲强度高，热膨胀系数适中，易于用于制造毛坯，并且在低于950℃的温度下致密烧结。

公开(公告)号：US06611056B2

公开(公告)日：2003-08-26

申请号：US10101851

申请日：2002-03-21

申请人： Kazutaka Okamoto ,  Yasuo Kondo ,  Teruyoshi Abe ,  Yasuhisa Aono ,  Junya Kaneda ,  Ryuichi Saito ,  Yoshihiko Koike

发明人： Kazutaka Okamoto ,  Yasuo Kondo ,  Teruyoshi Abe ,  Yasuhisa Aono ,  Junya Kaneda ,  Ryuichi Saito ,  Yoshihiko Koike

IPC分类号： H01L2310

CPC分类号： H01L24/32 ,  C22C1/1036 ,  C22C32/0021 ,  C22C32/0036 ,  H01L23/142 ,  H01L23/3735 ,  H01L23/4334 ,  H01L24/29 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L25/072 ,  H01L2224/0603 ,  H01L2224/291 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/32225 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48472 ,  H01L2224/49109 ,  H01L2224/49111 ,  H01L2224/49113 ,  H01L2224/73265 ,  H01L2224/83455 ,  H01L2224/83805 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/0133 ,  H01L2924/10329 ,  H01L2924/12042 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15153 ,  H01L2924/1517 ,  H01L2924/1532 ,  H01L2924/15787 ,  H01L2924/16195 ,  H01L2924/181 ,  H01L2924/3011 ,  H01L2924/30111 ,  H01L2924/3511 ,  H01L2924/00014 ,  H01L2924/01014 ,  H01L2924/00 ,  H01L2924/01028 ,  H01L2924/00012 ,  H01L2924/3512 ,  H01L2924/0695 ,  H01L2924/014

摘要： Provided are a composite material excellent in plastic workability, a method of producing the composite material, a heat-radiating board of a semiconductor equipment, and a semiconductor equipment to which this heat-radiating board is applied. This composite material comprises a metal and an inorganic compound formed to have a dendritic shape or a bar shape. In particular, this composite material is a copper composite material, which comprises 10 to 55 vol. % cuprous oxide (Cu2O) and the balance of copper (Cu) and incidental impurities and has a coefficient of thermal expansion in a temperature range from a room temperature to 300° C. of from 5×10−6 to 17×10−6/° C. and a thermal conductivity of 100 to 380 W/m·k. This composite material can be produced by a process comprising the steps of melting, casting and working and is applied to a heat-radiating board of a semiconductor article.

公开(公告)号：US06441317B1

公开(公告)日：2002-08-27

申请号：US09654085

申请日：2000-09-01

申请人： Akira Tanaka ,  Ryuichi Saito ,  Tadao Kushima ,  Yoshihiko Koike ,  Hideo Shimizu ,  Shigeharu Nonoyama

发明人： Akira Tanaka ,  Ryuichi Saito ,  Tadao Kushima ,  Yoshihiko Koike ,  Hideo Shimizu ,  Shigeharu Nonoyama

IPC分类号： H05K116

CPC分类号： H01L25/072 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2924/01019 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/30107 ,  H01L2924/00

摘要： In a semiconductor module comprising, a semiconductor element, an electrically insulating base having an outer surface to be connected to an electrically grounded surface, and an inner surface on which the semiconductor element is arranged, an electrically insulating cover covering the semiconductor element on the inner surface, and first and second electrically conductive members each of which is connected to the semiconductor element and extends to the exterior of the semiconductor module through the electrically insulating cover, a part of each of the first and second electrically conductive members on the exterior of the semiconductor module is arranged away from the outer surface to electrically isolate the part of the each of the first and second electrically conductive members from the electrically grounded surface.

摘要翻译： 在半导体模块中，包括半导体元件，具有要连接到电接地表面的外表面的电绝缘基底和布置有半导体元件的内表面，覆盖在内部的半导体元件的电绝缘盖 表面以及第一和第二导电构件，每个导电构件连接到半导体元件并且通过电绝缘盖延伸到半导体模块的外部，第一和第二导电构件中的每一个的外部的一部分 半导体模块远离外表面布置，以将第一和第二导电构件中的每一个的一部分与电接地表面电隔离。

公开(公告)号：US06366564B1

公开(公告)日：2002-04-02

申请号：US09077254

申请日：1998-05-26

申请人： Masahiro Hiraka ,  Hidenori Katsumura ,  Ryuichi Saito ,  Hiroshi Kushitani ,  Naoki Yuda ,  Shigeo Hurukawa ,  Suzushi Kimura

发明人： Masahiro Hiraka ,  Hidenori Katsumura ,  Ryuichi Saito ,  Hiroshi Kushitani ,  Naoki Yuda ,  Shigeo Hurukawa ,  Suzushi Kimura

IPC分类号： H04B156

CPC分类号： H04B1/52 ,  H01P1/2135 ,  H03H7/46 ,  H03H7/461 ,  H03H2007/386 ,  H04B1/005 ,  H04B1/406 ,  H04B1/48

摘要： A diplexer employed in mobile communications equipment such mobile phones which can divide signals into two channels with a simple configuration without interfering the other band. In this diplexer, an inductor 105 is connected between a &pgr;-type three-stage one polar low-pass filter 115 and a common terminal 113 as a first matching circuit, and a capacitor 106A is connected between a one polar band-pass filter 116 and a common terminal 113 as a second matching circuit so that interference with the other band can be prevented and the higher harmonics can be sufficiently attenuated with simple configuration.

摘要翻译： 在移动通信设备中使用的双工器，这种移动电话可以以简单的配置将信号分成两个信道，而不会干扰其他频带。 在该双工器中，电感器105连接在pi型三级一极极低通滤波器115和公共端113之间，作为第一匹配电路，电容器106A连接在一个极性带通滤波器116 以及作为第二匹配电路的公共端子113，从而可以防止与另一个频带的干扰，并且以简单的配置可以充分地衰减高次谐波。

公开(公告)号：US6037428A

公开(公告)日：2000-03-14

申请号：US55821

申请日：1998-04-06

申请人： Ryuichi Saito ,  Tadashi Amano

发明人： Ryuichi Saito ,  Tadashi Amano

IPC分类号： C08F4/38 ,  C08F14/06

CPC分类号： C08F14/06

摘要： Suspension polymerization of vinyl chloride in an aqueous medium is carried out in the presence of an oil-soluble polymerization initiator which is a combination of diacylperoxide compound and t-hexylperoxy diglycolate, the former having a half-life period of 10 hours at 30 to 50.degree. C. in benzene (0.05 mol/L). The resulting polymer gives a high-quality molded product which is free of odor and less liable to initial discoloration.

摘要翻译： 在水性介质中的氯乙烯的悬浮聚合在油溶性聚合引发剂的存在下进行，该油溶性聚合引发剂是二酰基过氧化物化合物和叔己基过氧化二乙酸酯的组合，前者在30至50℃下具有10小时的半衰期 苯（0.05mol / L）。 得到的聚合物产生高品质的成型产品，其不含气味，并且不易初始变色。

公开(公告)号：US5866037A

公开(公告)日：1999-02-02

申请号：US828707

申请日：1997-03-31

申请人： Takaaki Shimizu ,  Tsutomu Ogihara ,  Tatsushi Kaneko ,  Toshiaki Takahashi ,  Mutsuo Nakashima ,  Takeshi Kinsho ,  Ryuichi Saito ,  Hideshi Kurihara

发明人： Takaaki Shimizu ,  Tsutomu Ogihara ,  Tatsushi Kaneko ,  Toshiaki Takahashi ,  Mutsuo Nakashima ,  Takeshi Kinsho ,  Ryuichi Saito ,  Hideshi Kurihara

IPC分类号： G02F1/13 ,  C09K19/40 ,  C09K19/42 ,  C09K19/34 ,  C09K19/06 ,  C09K19/30

CPC分类号： C09K19/406

摘要： Liquid crystal compositions which can improve the low .DELTA.n (refractive index anisotropy) of conventional liquid crystal compositions containing a silacyclohexane compound and which retain a low viscosity and hence show no decrease in response speed. Liquid crystal compositions having a high .DELTA.n of 0.13 to 0.25, a low viscosity of 30 cp or less, a low threshold voltage and a high voltage holding ratio can be obtained by adding thereto, as a required component, a compound having both a silacyclohexane ring and a tolan structure, or a miture of a compound having a silacyclohexane ring and a compound having a tolan structure.

摘要翻译： 可以提高含有硅环己烷化合物的常规液晶组合物的低DELTA n（折射率各向异性）并保持低粘度并因此显示出不会降低响应速度的液晶组合物。 通过向其中加入作为所需成分的具有硅环己烷的化合物，可以获得具有0.13〜0.25的高DELTA n，30cp以下的低粘度，低阈值电压和高电压保持率的液晶组合物 环和托兰结构，或具有硅环己烷环的化合物和具有托兰结构的化合物。

公开(公告)号：US5561440A

公开(公告)日：1996-10-01

申请号：US741752

申请日：1991-08-07

申请人： Masaaki Kitajima ,  Makoto Tsumura ,  Yoshiro Mikami ,  Katsuyuki Funahata ,  Yoshiharu Nagae ,  Yoko Wakui ,  Ryuichi Saito ,  Makoto Matsui ,  Fumiaki Nemoto

发明人： Masaaki Kitajima ,  Makoto Tsumura ,  Yoshiro Mikami ,  Katsuyuki Funahata ,  Yoshiharu Nagae ,  Yoko Wakui ,  Ryuichi Saito ,  Makoto Matsui ,  Fumiaki Nemoto

IPC分类号： G02F1/133 ,  G02F1/1335 ,  G02F1/1343 ,  G02F1/136 ,  G02F1/1362 ,  G02F1/1368 ,  G09F9/30 ,  G09F9/35

CPC分类号： G02F1/133512 ,  G02F1/136213

摘要： A liquid crystal active matrix display device includes a first substrate having a thin film transistor formed thereon. A light-screening film 1 is located on the first substrate in a manner to be overlapped with an ITO. The display device includes a second substrate having a color filter and a light-screening film 2 formed thereon. The second substrate is opposed to the first substrate. The light-screening film 2 extends from the uncontrollable area by a certain value depending on a voltage from the external, resulting in improving a numerical aperture.