公开(公告)号：US5637534A

公开(公告)日：1997-06-10

申请号：US172717

申请日：1993-12-27

申请人： Nobuyuki Takeyasu ,  Hiroshi Yamamoto ,  Yumiko Kawano ,  Eiichi Kondoh ,  Tomoharu Katagiri ,  Tomohiro Ohta

发明人： Nobuyuki Takeyasu ,  Hiroshi Yamamoto ,  Yumiko Kawano ,  Eiichi Kondoh ,  Tomoharu Katagiri ,  Tomohiro Ohta

IPC分类号： H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  H01L21/44

CPC分类号： H01L23/53223 ,  H01L21/76802 ,  H01L21/76879 ,  H01L23/5226 ,  H01L2924/0002

摘要： A semiconductor device has a multilayered structure that includes an insulating interlayer formed on a lower wiring layer, a semiconductor substrate, and a via hole. The semiconductor device is manufactured by a method that includes plasma etching at least one surface of the insulating interlayer the in an atmosphere having as a major component either a carbonless, chlorine-based gas or a carbonless, chlorine-based gas and an inactive gas in order to remove contaminates that would otherwise promote reactivity with aluminum CVD on the surface of the insulating interlayer.

摘要翻译： 半导体器件具有多层结构，其包括形成在下布线层，半导体衬底和通孔上的绝缘中间层。 半导体器件通过以下方法制造：包括在作为主要成分的无碳，氯系气体或无碳，氯系气体和惰性气体的气氛中等离子体蚀刻绝缘夹层的至少一个表面 以去除否则将促进绝缘中间层表面上的铝CVD的反应性的污染物。

公开(公告)号：US09187822B2

公开(公告)日：2015-11-17

申请号：US13825579

申请日：2011-09-05

申请人： Yumiko Kawano ,  Susumu Arima

发明人： Yumiko Kawano ,  Susumu Arima

IPC分类号： C23C16/00 ,  C23C16/06 ,  C23C16/30 ,  H01L45/00 ,  C23C16/44 ,  C23C16/455

CPC分类号： C23C16/06 ,  C23C16/305 ,  C23C16/44 ,  C23C16/45523 ,  H01L45/06 ,  H01L45/144 ,  H01L45/1616

摘要： Disclosed is a method for forming a Ge—Sb—Te film, in which a substrate is disposed within a process chamber, a gaseous Ge material, a gaseous Sb material, and a Te material are introduced into the process chamber, so that a Ge—Sb—Te film formed of Ge2Sb2Te5 is formed on the substrate by CVD. The method for forming a Ge—Sb—Te film comprises: a step (step 2) wherein the gaseous Ge material and the gaseous Sb material or alternatively a small amount of the gaseous Te material not sufficient for formed of Ge2Sb2Te5 in addition to the gaseous Ge material and the gaseous Sb material are introduced into the process chamber so that a precursor film, which does not contain Te or contains Te in an amount smaller than that in Ge2Sb2Te5, is formed on the substrate; and a step (step 3) wherein the gaseous Te material is introduced into the process chamber and the precursor film is caused to adsorb Te, so that the Te concentration in the film is adjusted.

摘要翻译： 公开了一种形成Ge-Sb-Te膜的方法，其中将衬底设置在处理室内，气态Ge材料，气态Sb材料和Te材料被引入处理室中，使得Ge 由Ge2Sb2Te5形成的-Sb-Te膜通过CVD形成在基板上。 形成Ge-Sb-Te膜的方法包括：步骤（步骤2），其中气态Ge材料和气态Sb材料或替代地少量气态Te材料不足以形成Ge2Sb2Te5，除了气体 将Ge材料和气态Sb材料引入处理室，使得在基板上形成不含Te或含有Te的量的前体膜，其量小于Ge 2 Sb 2 Te 5中的Te; 和步骤（步骤3），其中将气态Te材料引入处理室，并使前体膜吸附Te，从而调节膜中的Te浓度。

公开(公告)号：US08691338B2

公开(公告)日：2014-04-08

申请号：US13063779

申请日：2009-07-17

申请人： Yumiko Kawano ,  Yusaku Kashiwagi

发明人： Yumiko Kawano ,  Yusaku Kashiwagi

IPC分类号： C23C16/00 ,  B05D5/00 ,  B05D3/00

CPC分类号： H01L21/312 ,  B05D1/60 ,  C08G73/1046 ,  C08G73/105 ,  C08G73/1067 ,  C08G73/1071 ,  C08L79/08 ,  H01L21/02118 ,  H01L21/02269 ,  H01L21/481 ,  H01L23/49894 ,  H01L2924/0002 ,  H01L2924/00

摘要： A first substrate has a source material forming surface on which source materials for forming a polymerized film is formed in a predetermined pattern, and a second substrate has a film forming surface on which the polymerized film will be formed. Here, the first substrate and the second substrate are installed in a processing chamber such that the source material forming surface and the film forming surface face each other. Then, the first substrate is heated to a first temperature at which the source materials on the source material forming surface are evaporated and the second substrate is heated to a second temperature at which the source materials cause polymerization reaction on the film forming surface. Therefore, the polymerized film is formed on the film forming surface by reacting the source materials and evaporated from the first substrate on the film forming surface of the second substrate.

摘要翻译： 第一基板具有源材料形成表面，在其上以预定图案形成用于形成聚合膜的源材料，第二基板具有将形成聚合膜的成膜表面。 这里，第一基板和第二基板安装在处理室中，使得源材料形成表面和成膜表面彼此面对。 然后，将第一基板加热到源材料形成表面上的源材料蒸发的第一温度，并将第二基板加热到第二温度，在该第二温度下，源材料在成膜表面上引起聚合反应。 因此，通过使源材料反应并在第二基板的成膜表面上从第一基板蒸发而在成膜表面上形成聚合膜。

公开(公告)号：US08361550B2

公开(公告)日：2013-01-29

申请号：US12529356

申请日：2008-02-27

申请人： Akinobu Kakimoto ,  Yumiko Kawano

发明人： Akinobu Kakimoto ,  Yumiko Kawano

IPC分类号： C23C16/40

CPC分类号： C23C16/45553 ,  C23C16/40 ,  C23C16/404 ,  C23C16/405 ,  H01L21/3141 ,  H01L21/31691

摘要： A substrate is arranged in a processing chamber, the substrate is heated, a Ti material is introduced into the processing chamber in the form of gas, the Ti material is oxidized by introducing an oxidizing agent in the form of gas, a Sr material is introduced into the processing chamber in the form of gas, the Sr material is oxidized by introducing the oxidizing agent in the form of gas, and a SrTiO3 film is formed on the substrate. As the Sr material, a Sr amine compound or a Sr imine compound is used.

摘要翻译： 基板被布置在处理室中，基板被加热，Ti材料以气体的形式被引入处理室中，Ti材料通过引入气体形式的氧化剂而被氧化，引入Sr材料 以气体的形式进入处理室，通过以气体的形式引入氧化剂来氧化Sr材料，并且在衬底上形成SrTiO 3膜。 作为Sr材料，使用Sr胺化合物或Sr亚胺化合物。

公开(公告)号：US20110171384A1

公开(公告)日：2011-07-14

申请号：US13063779

申请日：2009-07-17

申请人： Yumiko Kawano ,  Yusaku Kashiwagi

发明人： Yumiko Kawano ,  Yusaku Kashiwagi

IPC分类号： C23C16/448 ,  C23C16/458 ,  C23C16/46 ,  C23C16/52

CPC分类号： H01L21/312 ,  B05D1/60 ,  C08G73/1046 ,  C08G73/105 ,  C08G73/1067 ,  C08G73/1071 ,  C08L79/08 ,  H01L21/02118 ,  H01L21/02269 ,  H01L21/481 ,  H01L23/49894 ,  H01L2924/0002 ,  H01L2924/00

摘要： A first substrate 16 has a source material forming surface on which a plurality of source materials for forming a polymerized film is formed in a predetermined pattern, and a second substrate 15 has a film forming surface on which the polymerized film will be formed. Here, the first substrate 16 and the second substrate 15 are installed in a processing chamber 2 such that the source material forming surface and the film forming surface face each other. Then, the inside of the processing chamber 2 is maintained under a vacuum atmosphere, and the first substrate 16 is heated to a first temperature at which the source materials on the source material forming surface are evaporated and the second substrate 15 is heated to a second temperature at which the source materials cause polymerization reaction on the film forming surface. Therefore, the polymerized film is formed on the film forming surface by reacting the source materials 17 and 18 evaporated from the first substrate 16 on the film forming surface of the second substrate 15.

摘要翻译： 第一基板16具有源材料形成表面，多个用于形成聚合膜的源材料以预定图案形成，第二基板15具有将形成聚合膜的成膜表面。 这里，第一基板16和第二基板15安装在处理室2中，使得源材料形成表面和成膜表面彼此面对。 然后，将处理室2的内部保持在真空气氛下，将第一基板16加热到源材料形成表面上的源材料蒸发并且将第二基板15加热到第二温度的第一温度 源材料在成膜表面上引起聚合反应的温度。 因此，通过使从第一基板16蒸发的源材料17和18在第二基板15的成膜表面上反应，在成膜表面上形成聚合膜。

公开(公告)号：US20110036288A1

公开(公告)日：2011-02-17

申请号：US12918165

申请日：2009-02-18

申请人： Yumiko Kawano ,  Susumu Arima ,  Akinobu Kakimoto ,  Toshiyuki Hirota ,  Takakazu Kiyomura

发明人： Yumiko Kawano ,  Susumu Arima ,  Akinobu Kakimoto ,  Toshiyuki Hirota ,  Takakazu Kiyomura

IPC分类号： C30B1/02

CPC分类号： H01L21/02197 ,  C23C16/40 ,  C23C16/409 ,  C23C16/45527 ,  C23C16/45531 ,  C23C16/56 ,  H01G4/1227 ,  H01G4/33 ,  H01L21/02178 ,  H01L21/02186 ,  H01L21/02192 ,  H01L21/022 ,  H01L21/0228 ,  H01L21/02323 ,  H01L21/02356 ,  H01L21/31691 ,  H01L28/40

摘要： Disclosed is a method for Sr—Ti—O-base film formation. The method comprises placing a substrate with a Ru film formed thereon in a treatment vessel, introducing a gaseous Ti material, a gaseous Sr material, and a gaseous oxidizing agent into the treatment vessel to form a first Sr—Ti—O-base film having a thickness of not more than 10 nm on the Ru film, annealing the first Sr—Ti—O-base film for crystallization, introducing a gaseous Ti material, a gaseous Sr material, and a gaseous oxidizing agent into the treatment vessel to form a second Sr—Ti—O-base film on the first Sr—Ti—O-base film, and annealing the second Sr—Ti—O-base film for crystallization.

摘要翻译： 公开了一种Sr-Ti-O基成膜方法。 该方法包括将其上形成有Ru膜的基板放置在处理容器中，将气态Ti材料，气态Sr材料和气态氧化剂引入处理容器中以形成第一Sr-Ti-O基膜，其具有 在Ru膜上的厚度不大于10nm，对第一Sr-Ti-O基膜进行结晶退火，将气态Ti材料，气态Sr材料和气态氧化剂引入处理容器中以形成 在第一Sr-Ti-O基膜上形成第二Sr-Ti-O基膜，并对第二Sr-Ti-O基膜进行退火以进行结晶化。

公开(公告)号：US20090165720A1

公开(公告)日：2009-07-02

申请号：US12397088

申请日：2009-03-03

申请人： Yasuhiko KOJIMA ,  Tadahiro Ishizaka ,  Yumiko Kawano

发明人： Yasuhiko KOJIMA ,  Tadahiro Ishizaka ,  Yumiko Kawano

IPC分类号： C23C16/54

CPC分类号： C23C16/4409 ,  C23C16/4586 ,  C23C16/463 ,  H01L21/67109 ,  H01L21/67126

摘要： A substrate treating apparatus comprising a treatment chamber for housing a substrate, a stage on which the substrate is placed within the treatment chamber, a heating member arranged within the stage and used for heating the substrate, a sealing member arranged between the stage and the treatment chamber, and a cooling mechanism having a cooling medium, whose latent heat of vaporization is utilized for cooling the sealing member.

摘要翻译： 一种基板处理装置，包括：用于容纳基板的处理室;基板被放置在处理室内的阶段;布置在所述台内并用于加热所述基板的加热构件;布置在所述台与处理之间的密封构件 以及具有冷却介质的冷却机构，其利用蒸发潜热来冷却密封部件。

公开(公告)号：US20090142491A1

公开(公告)日：2009-06-04

申请号：US11988298

申请日：2006-07-07

申请人： Kazuhito Nakamura ,  Hideaki Yamasaki ,  Yumiko Kawano

发明人： Kazuhito Nakamura ,  Hideaki Yamasaki ,  Yumiko Kawano

IPC分类号： C23C16/44

CPC分类号： C23C16/46 ,  C23C16/34 ,  C23C16/45531 ,  H01L21/28562 ,  H01L21/76843

摘要： The present invention is a method of film deposition that comprises a first gas-supplying step of supplying a high-melting-point organometallic material gas to a processing vessel that can be evacuated, and a second gas-supplying step of supplying, to the processing vessel, a gas consisting of one, or two or more gases selected from a nitrogen-containing gas, a silicon-containing gas, and a carbon-containing gas, wherein a thin metallic compound film composed of one, or two or more compounds selected from a high-melting-point metallic nitride, a high-melting-point metallic silicate, and a high-melting-point metallic carbide is deposited on the surface of an object to be processed, placed in the processing vessel. The first and second gas-supplying steps are alternately carried out, and in these steps, the object to be processed is held at a temperature equal to or higher than the decomposition-starting temperature of the high-melting-point organometallic material.

摘要翻译： 本发明是一种薄膜沉积方法，其包括向能够抽真空的处理容器供给高熔点有机金属材料气体的第一气体供给步骤和向处理过程中供给第二气体供给步骤 容器，由选自含氮气体，含硅气体和含碳气体中的一种或两种或更多种气体组成的气体，其中选择由一种或两种或更多种化合物组成的薄金属化合物膜 从高熔点金属氮化物，高熔点金属硅酸盐和高熔点金属碳化物沉积在被处理物体的表面上，放置在处理容器中。 交替进行第一和第二供气步骤，在这些步骤中，待处理物体保持在高熔点有机金属材料的分解 - 起始温度以上的温度。

公开(公告)号：US07189431B2

公开(公告)日：2007-03-13

申请号：US10711717

申请日：2004-09-30

申请人： Hideaki Yamasaki ,  Kazuhito Nakamura ,  Yumiko Kawano ,  Gert J. Leusink ,  Fenton R. McFeely ,  Paul Jamison

发明人： Hideaki Yamasaki ,  Kazuhito Nakamura ,  Yumiko Kawano ,  Gert J. Leusink ,  Fenton R. McFeely ,  Paul Jamison

IPC分类号： C23C16/16

CPC分类号： H01L21/28556 ,  C23C16/16 ,  H01L21/28079 ,  H01L21/28247 ,  H01L21/76843 ,  H01L21/7685 ,  H01L21/76856 ,  H01L29/517

摘要： A method for forming a passivated metal layer that preserves the properties and morphology of an underlying metal layer during subsequent exposure to oxygen-containing ambients. The method includes providing a substrate in a process chamber, exposing the substrate to a process gas containing a rhenium-carbonyl precursor to deposit a rhenium metal layer on the substrate in a chemical vapor deposition process, and forming a passivation layer on the rhenium metal layer to thereby inhibit oxygen-induced growth of rhenium-containing nodules on the rhenium metal surface.

摘要翻译： 用于形成钝化金属层的方法，其在随后暴露于含氧环境期间保持下面的金属层的性质和形态。 该方法包括在处理室中提供衬底，将衬底暴露于含有铼 - 羰基前体的工艺气体，以在化学气相沉积工艺中在衬底上沉积铼金属层，以及在铼金属层上形成钝化层 从而抑制铼金属表面上含铼结核的氧诱导生长。

公开(公告)号：US07078341B2

公开(公告)日：2006-07-18

申请号：US10673648

申请日：2003-09-30

申请人： Hideaki Yamasaki ,  Tsukasa Matsuda ,  Atsushi Gomi ,  Tatsuo Hatano ,  Masahito Sugiura ,  Yumiko Kawano ,  Gert J Leusink ,  Fenton R McFeely ,  Sandra G. Malhotra

发明人： Hideaki Yamasaki ,  Tsukasa Matsuda ,  Atsushi Gomi ,  Tatsuo Hatano ,  Masahito Sugiura ,  Yumiko Kawano ,  Gert J Leusink ,  Fenton R McFeely ,  Sandra G. Malhotra

IPC分类号： H01L21/44

CPC分类号： H01L21/76843 ,  C23C16/16 ,  H01L21/28556 ,  H01L21/76841

摘要： A method for depositing metal layers on semiconductor substrates by a thermal chemical vapor deposition (TCVD) process. The TCVD process utilizes high flow rate of a dilute process gas containing a metal-carbonyl precursor to deposit a metal layer. In one embodiment of the invention, the metal-carbonyl precursor can be selected from at least one of W(CO)6, Ni(CO)4, Mo(CO)6, Co2(CO)8, Rh4(CO)12, Re2(CO)10, Cr(CO)6, and Ru3(CO)12. In another embodiment of the invention, a method is provided for depositing a W layer from a process gas comprising a W(CO)6 precursor at a substrate temperature of about 410° C. and a chamber pressure of about 200 mTorr.

摘要翻译： 一种通过热化学气相沉积（TCVD）工艺在半导体衬底上沉积金属层的方法。 TCVD工艺利用含有羰基金属前体的稀释工艺气体的高流速来沉积金属层。 在本发明的一个实施方案中，羰基金属前体可以选自W（CO）6，Ni（CO）4，Mo（CO） Co（CO）8，Rh 4（CO）12，SO 2，CO 2， （CO）10，Cr（CO）6和Ru 3（CO） _{12 。 在本发明的另一个实施方案中，提供了一种方法，用于在约410℃的衬底温度下从包含W（CO）6 N 2前体的工艺气体中沉积W层， 约200毫托。}