Abstract:
The present invention relates to a method of mass spectrometry, an apparatus adapted to perform the method and a mass spectrometer. More particularly, but not exclusively, the present invention relates to a method of mass spectrometry comprising the step of associating parent and fragmentation ions from a sample by measuring the parent and fragmentation ions from two or more different areas of the sample and identifying changes in the number of parent ions between the areas in the sample, and corresponding changes in the number of fragmentation ions between the two areas.
Abstract:
The described embodiments relate generally to adjusting output or conditioning of an electron beam. More specifically various configurations are disclosed that relate to maintaining a footprint of the electron beam incident to a workpiece within a defined energy level. Such a configuration allows the electron beam to heat only specific portions of the workpiece to a superheated state in which intermetallic compounds are dissolved. In one embodiment a mask is disclosed that prevents low energy portions of an electron beam from contacting the workpiece. In another embodiment the electron beam can be focused in a way that maintains the electron beam at an energy level such that substantially all of the electron beam is above a threshold energy level.
Abstract:
An apparatus for transmission of energy of an ion to at least one gas particle and/or for transportation of an ion and a particle beam device having an apparatus such as this are disclosed. In particular, a container is provided, in which a gas is arranged which has gas particles, wherein the container has a transport axis. Furthermore, at least one first multipole unit and at least one second multipole unit are provided, which are arranged along the transport axis. The first multipole unit and the second multipole unit are formed by printed circuit boards. Furthermore, an electronic circuit is provided, which provides each multipole unit with a potential, such that a potential gradient is generated, in particular along the transport axis.
Abstract:
One embodiment relates to an apparatus for correcting aberrations introduced when an electron lens forms an image of a specimen and simultaneously forming an electron image using electrons with a narrow range of electron energies from an electron beam with a wide range of energies. A first electron beam source is configured to generate a lower energy electron beam, and a second electron beam source is configured to generate a higher energy electron beam. The higher energy beam is passed through a monochromator comprising an energy-dispersive beam separator, an electron mirror and a knife-edge plate that removes both the high and low energy tail from the propagating beam. Both the lower and higher energy electron beams are deflected by an energy-dispersive beam separator towards the specimen and form overlapping illuminating electron beams. An objective lens accelerates the electrons emitted or scattered by the sample. The electron beam leaving the specimen is deflected towards a first electron mirror by an energy-dispersive beam separator, which introduces an angular dispersion that disperses the electron beam according to its energy. A knife-edge plate, located between the beam separator and first electron mirror, is inserted that removes all of the beam with energy larger and smaller than a selected energy and filters the beam according to energy. One or more electron lenses focus the electron beam at the reflection surface of the first electron mirror so that after the reflection and another deflection by the same energy-dispersive beam separator the electron beam dispersion is removed. The dispersion-free and energy-filtered electron beam is then reflected in a second electron mirror which corrects one or more aberrations of the objective lens. After the second reflection, electrons are deflected by the magnetic beam separator towards the projection optics which forms a magnified, aberration-corrected, energy-filtered image on a viewing screen.
Abstract:
Methods are disclosed for operating a device having a high energy particle detector wherein the particles create first incoming traversal events, outgoing backscatter events, higher-order in and out events and incoming events caused by particles which backscatter out of the device, hit nearby mechanical structures and are scattered back into the device. Exemplary method steps include discriminating incoming traversal events from outgoing backscatter events, higher-order in and out events and incoming events by limiting dose rate to a level at ensures that separate events do not overlap and discriminating events from background and from other events based on total energy in each event; discriminating backscatter events from incoming traversal events based on electron path shape; or determining that a first event and a second event are coincident with each other and separating incoming form backscatter events based on electron path shape and energy level.
Abstract:
Provided is a charged particle beam processing apparatus capable of improving yields by suppressing the spread of metal pollution to a semiconductor manufacturing process to a minimum. The charged particle beam processing apparatus includes an ion beam column 1 that is connected to a vacuum vessel 10 and irradiates a sample 35 with an ion beam 11 of nonmetal ion species, a microsampling unit 3 having a probe 16 that extracts a microsample 43 cut out from a sample 35 by the ion beam 11, a gas gun 2 that discharges a gas for bonding the microsample 43 and the probe 16, a pollution measuring beam column 6A that is connected to the same vacuum vessel 10 to which the ion beam column 1 is connected and irradiates an ion beam irradiation traces by the ion beam column 1 with a pollution measuring beam 13, and a detector 7 that detects characteristic X-rays emitted from the ion beam irradiation traces by the ion beam column 1 upon irradiation with the pollution measuring beam 13.
Abstract:
An ion implanter for manufacturing a single crystal film by extracting a hydrogen ion or a rare-gas ion from an ion source, selects a desired ion with a first sector electromagnet, scanning the ion with a scanner, collimates the ion with a second sector electromagnet, and implants it into a substrate; the ion source is configured to be located close to the entrance side focal point of the first sector electromagnet. In this case, when an aperture of an extraction section of the ion source is circular and entrance side focal points in a deflection surface and a surface perpendicular thereto in the first sector electromagnet are coincident, the ion beam after passing the first sector electromagnet becomes completely parallel in the two surfaces and the spot shape becomes a circle.
Abstract:
An apparatus and method for partial ion implantation, which desirably provide control over the energy of the implanted dopants, generally includes an ion beam generator, and first and second deceleration units. The first deceleration unit decelerates the energy of an ion beam generated by the ion beam generator; and a subsequent, second deceleration unit further decelerates the energy into different energy levels according to regions of a wafer into which the ions are to be implanted.
Abstract:
A bio electron microscope and an observation method which can observe a bio specimen by low damage and high contrast to perform high-accuracy image analysis, and conduct high-throughput specimen preparation. 1) A specimen is observed at an accelerating voltage 1.2 to 4.2 times a critical electron accelerating voltage possible to transmit a specimen obtained under predetermined conditions. 2) An electron energy filter of small and simplified construction is provided between the specimen and an electron detector for imaging by the electron beam in a specified energy region of the electron beams transmitting the specimen. 3) Similarity between an observed image such as virus or protein in the specimen and a reference image such as known virus or protein is subjected to quantitative analysis by image processing. 4) A preparation protocol of the bio specimen is made into a chip using an MEMS technique, which is then mounted on a specimen stage part of an electron microscope to conduct specimen introduction, preparation and transfer onto a specimen holder.
Abstract:
Apparatus and methods are disclosed for measuring time delays between pulse streams or other input signals and for measuring ion beam energies in an ion implantation system. A variable delay apparatus is applied to one input signal, and the signals are correlated or compared in a correlator apparatus providing a minimum, maximum, or other ascertainable output signal value when a delay value of the variable delay is representative of the time delay between the first and second input signals. By adjusting or sweeping the variable delay until the ascertainable correlator apparatus output value is obtained, the actual time delay is determined as the dialed-in value of the variable delay that produces the ascertainable correlator output value. The variable delay measurement apparatus and methods may be employed in ion implantation system for measuring ion beam energies using time of flight probes, wherein the system and the time delay measurement apparatus may be calibrated to remove any residual delays of the system, such as delay offsets related to channel imbalance in the system and connecting devices. In addition, a unique error correction method is disclosed, which may be applied to the time delay measurement system measurement to minimize or mitigate errors introduced by electronic components of the system.