公开(公告)号：US08178934B2

公开(公告)日：2012-05-15

申请号：US12953106

申请日：2010-11-23

Applicant: Naomu Kitano ,  Takashi Nakagawa ,  Toru Tatsumi

Inventor： Naomu Kitano ,  Takashi Nakagawa ,  Toru Tatsumi

IPC: H01L29/51

CPC classification number: H01L29/42324 ,  C23C14/0676 ,  C23C14/225 ,  C23C14/3464 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/02194 ,  H01L21/02266 ,  H01L21/28273 ,  H01L21/28282 ,  H01L21/31604 ,  H01L21/318 ,  H01L29/4234 ,  H01L29/513 ,  H01L29/7881

Abstract: The present invention provides a method of manufacturing a dielectric film having a high permittivity. An embodiment of the present invention is a method of manufacturing, on a substrate, a dielectric film including a metallic oxynitride containing an element A made of Hf or a mixture of Hf and Zr, an element B made of Al, and N and O. The manufacturing method includes: a step of forming a metallic oxynitride whose mole fractions of the element A, the element B, and N expressed as B/(A+B+N) has a range of 0.015≦(B/(A+B+N))≦0.095 and N/(A+B+N) has a range of 0.045≦(N/(A+B+N)) and a mole fraction O/A of the element A and O has a range expressed as 1.0

Abstract translation: 本发明提供具有高介电常数的电介质膜的制造方法。 本发明的一个实施方式是在基板上制造包含含有由Hf或Hf和Zr的混合物构成的元素A的金属氮氧化物的电介质膜，由Al构成的元素B和N和O. 该制造方法包括：形成表示为B /（A + B + N）的元素A，元素B和N的摩尔分数的金属氮氧化物的范围为0.015＆lt; 1EE的工序;（B /（A + B + N））＆nlE; 0.095和N /（A + B + N）的范围为0.045＆nlE;（N /（A + B + N）），元素A和O的摩尔分数O / 表示为1.0 <（O / A）<2.0的范围，具有非结晶结构; 以及在具有非结晶结构的金属氮氧化物上在700℃以上进行退火处理以形成具有80％以上立方晶结合比例的结晶相的金属氧氮化物的工序。

公开(公告)号：US20120074480A1

公开(公告)日：2012-03-29

申请号：US13310245

申请日：2011-12-02

Applicant: Kie Y. Ahn ,  Leonard Forbes

Inventor： Kie Y. Ahn ,  Leonard Forbes

IPC: H01L29/78

CPC classification number: H01L21/28273 ,  B82Y10/00 ,  C23C16/40 ,  C23C16/45525 ,  H01L21/02178 ,  H01L21/02192 ,  H01L21/02194 ,  H01L21/022 ,  H01L21/0228 ,  H01L21/3142

Abstract: Methods of forming dielectric structures are shown. Methods of forming dielectric structures are shown that include lutetium oxide and lanthanum aluminum oxide crystals embedded within the lutetium oxide. Specific methods shown include monolayer deposition which yields process improvements such as chemistry control, step coverage, crystallinity/microstructure control.

Abstract translation: 显示形成电介质结构的方法。 示出了形成介电结构的方法，其包括氧化镥中氧化镥和氧化镧氧化物晶体。 所显示的具体方法包括单层沉积，其产生过程改进，例如化学控制，步骤覆盖，结晶度/微结构控制。

公开(公告)号：US20120061799A1

公开(公告)日：2012-03-15

申请号：US12901239

申请日：2010-10-08

Applicant: Imran Hashim ,  Indranil De ,  Tony Chiang ,  Edward Haywood ,  Hanhong Chen ,  Nobi Fuchigami ,  Pragati Kumar ,  Sandra Malhotra ,  Sunil Shanker

Inventor： Imran Hashim ,  Indranil De ,  Tony Chiang ,  Edward Haywood ,  Hanhong Chen ,  Nobi Fuchigami ,  Pragati Kumar ,  Sandra Malhotra ,  Sunil Shanker

IPC: H01L29/92

CPC classification number: H01L28/40 ,  C23C14/083 ,  C23C14/3464 ,  C23C16/405 ,  C23C16/45531 ,  H01L21/02186 ,  H01L21/02192 ,  H01L21/02194 ,  H01L21/02266 ,  H01L21/0228

Abstract: This disclosure provides (a) methods of making an oxide layer (e.g., a dielectric layer) based on yttrium and titanium, to have a high dielectric constant and low leakage characteristic and (b) related devices and structures. An oxide layer having both yttrium and titanium may be fabricated either as an amorphous oxide or as an alternating series of monolayers. In several embodiments, the oxide is characterized by a yttrium contribution to total metal that is specifically controlled. The oxide layer can be produced as the result of a reactive process, if desired, via either a PVD process or, alternatively, via an atomic layer deposition process that employs specific precursor materials to allow for a common process temperature window for both titanium and yttrium reactions.

Abstract translation: 本公开内容提供（a）制造基于钇和钛的氧化物层（例如，电介质层）的方法，以具有高介电常数和低泄漏特性，以及（b）相关的器件和结构。 具有钇和钛的氧化物层可以制成无定形氧化物或交替的单层系列。 在几个实施方案中，氧化物的特征在于对特定控制的总金属的钇贡献。 如果需要，氧化物层可以通过PVD工艺或者通过使用特定前体材料以允许钛和钇的共同工艺温度窗口的原子层沉积工艺作为反应过程的结果来生产 反应。

公开(公告)号：US20120029219A1

公开(公告)日：2012-02-02

申请号：US13012044

申请日：2011-01-24

Applicant: Scott Houston Meiere ,  James Philip Natwora, JR.

Inventor： Scott Houston Meiere ,  James Philip Natwora, JR.

IPC: C07F7/00

CPC classification number: H01L21/02181 ,  C01G27/04 ,  C01P2006/80 ,  C07F7/003 ,  C23C16/405 ,  C23C16/4402 ,  C23C18/06 ,  C23C18/08 ,  C23C18/12 ,  C23C18/1208 ,  C23C18/1216 ,  C23C18/125 ,  C23C18/1291 ,  H01L21/02189 ,  H01L21/02194 ,  H01L21/02205 ,  H01L21/3141 ,  H01L21/31645

Abstract: This invention relates to hafnium-containing compositions having a zirconium concentration of less than about 500 parts per million, a process for producing the hafnium-containing compositions, organometallic precursor compositions containing a hafnium-containing compound and having a zirconium concentration of less than about 500 parts per million, a process for producing the organometallic precursor compositions, and a method for producing a film or coating from the organometallic precursor compositions. The organometallic precursor compositions are useful in semiconductor applications as chemical vapor deposition (CVD) or atomic layer deposition (ALD) precursors for film depositions.

Abstract translation: 本发明涉及锆浓度小于约百万分之500的含铪组合物，含铪组合物的制备方法，含有含铪的化合物的有机金属前体组合物和锆浓度小于约500 百万分之一，生产有机金属前体组合物的方法，以及从有机金属前体组合物制备薄膜或涂层的方法。 有机金属前体组合物可用作半导体应用，作为用于膜沉积的化学气相沉积（CVD）或原子层沉积（ALD）前体。

公开(公告)号：US08102013B2

公开(公告)日：2012-01-24

申请号：US12401404

申请日：2009-03-10

Applicant: Kie Y. Ahn ,  Leonard Forbes

Inventor： Kie Y. Ahn ,  Leonard Forbes

IPC: H01L21/02

CPC classification number: H01L21/0228 ,  C23C16/405 ,  C23C16/45529 ,  C23C16/45531 ,  H01L21/02186 ,  H01L21/02192 ,  H01L21/02194 ,  H01L21/022 ,  H01L21/28194 ,  H01L21/28273 ,  H01L21/28282 ,  H01L21/3115 ,  H01L21/3141 ,  H01L21/31604 ,  H01L29/4234 ,  H01L29/513 ,  H01L29/517

Abstract: The use of atomic layer deposition (ALD) to form an amorphous dielectric layer of titanium oxide (TiOX) doped with lanthanide elements, such as samarium, europium, gadolinium, holmium, erbium and thulium, produces a reliable structure for use in a variety of electronic devices. The dielectric structure is formed by depositing titanium oxide by atomic layer deposition onto a substrate surface using precursor chemicals, followed by depositing a layer of a lanthanide dopant, and repeating to form a sequentially deposited interleaved structure. Such a dielectric layer may be used as the gate insulator of a MOSFET, as a capacitor dielectric, or as a tunnel gate insulator in flash memories, because the high dielectric constant (high-k) of the layer provides the functionality of a thinner silicon dioxide layer, and because the reduced leakage current of the dielectric layer when the percentage of the lanthanide element doping is optimized.

Abstract translation: 使用原子层沉积（ALD）形成掺杂有镧系元素（例如钐，铕，钆，钬，铒和and）的氧化钛（TiOX）的非晶电介质层，产生可靠的结构，用于各种 电子设备。 通过使用前体化学品将原子层沉积氧化钛沉积到衬底表面上，然后沉积镧系元素掺杂剂层并重复以形成顺序沉积的交错结构而形成电介质结构。 这样的电介质层可以用作MOSFET的栅极绝缘体，作为电容器电介质，或者作为闪存中的隧道栅极绝缘体，因为该层的高介电常数（高k）提供更薄的硅的功能 并且由于优化了镧系元素掺杂的百分比时介电层的漏电流减小。

公开(公告)号：US20120001159A1

公开(公告)日：2012-01-05

申请号：US13233377

申请日：2011-09-15

Applicant: Gi Heon KIM ,  Sung Min YOON ,  Kyu Ha BAEK ,  In Kyu YOU ,  Seung Youl KANG ,  Seong Deok AHN ,  Kyung Soo SUH

Inventor： Gi Heon KIM ,  Sung Min YOON ,  Kyu Ha BAEK ,  In Kyu YOU ,  Seung Youl KANG ,  Seong Deok AHN ,  Kyung Soo SUH

IPC: H01L51/10 ,  H01L29/51

CPC classification number: H01L21/02118 ,  C08F120/00 ,  C08F120/10 ,  C08F120/44 ,  H01L21/02164 ,  H01L21/02186 ,  H01L21/02194 ,  H01L21/02197 ,  H01L21/02282 ,  H01L21/312 ,  H01L21/31691 ,  H01L51/0537

Abstract: Provided is an insulating layer in which an inorganic material is added to an organic polymer to thereby improve the insulating properties, an organic thin film transistor using the insulating layer, and a method of fabricating the organic thin film transistor. An insulating layer for an organic thin film transistor including a vinyl polymer and an inorganic material is provided. Here, a weight ratio of the vinyl polymer to the inorganic material may be in the range of 1:0.0001 to 1:0.5. Accordingly, it is possible to fabricate a thin film at low temperature and, further, to fabricate an insulating layer having a high-dielectric constant, not affecting other layers formed in the previous processes during the formation of the insulating layer.

Abstract translation: 提供一种绝缘层，其中无机材料被添加到有机聚合物中以提高绝缘性能，使用该绝缘层的有机薄膜晶体管以及制造该有机薄膜晶体管的方法。 提供了包含乙烯基聚合物和无机材料的有机薄膜晶体管的绝缘层。 这里，乙烯基聚合物与无机材料的重量比可以在1：0.0001〜1:0.5的范围内。 因此，可以在低温下制造薄膜，并且还可以制造绝缘层，该绝缘层具有高介电常数，不影响在形成绝缘层期间的以前工艺中形成的其它层。

公开(公告)号：US08049304B2

公开(公告)日：2011-11-01

申请号：US12422788

申请日：2009-04-13

Applicant: Cancheepuram V. Srividya ,  Noel Rocklein ,  John Vernon ,  Jeff Nelson ,  F. Daniel Gealy ,  David Korn

Inventor： Cancheepuram V. Srividya ,  Noel Rocklein ,  John Vernon ,  Jeff Nelson ,  F. Daniel Gealy ,  David Korn

IPC: H01L29/92

CPC classification number: C23C16/405 ,  C23C16/40 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/02189 ,  H01L21/02194 ,  H01L21/022 ,  H01L21/0228 ,  H01L21/3141 ,  H01L21/3162 ,  H01L21/31641 ,  H01L21/31645 ,  H01L28/40

Abstract: The invention includes ALD-type methods in which two or more different precursors are utilized with one or more reactants to form a material. In particular aspects, the precursors are hafnium and aluminum, the only reactant is ozone, and the material is hafnium oxide predominantly in a tetragonal crystalline phase.

Abstract translation: 本发明包括ALD型方法，其中使用两种或更多种不同的前体与一种或多种反应物形成材料。 在特定方面，前体是铪和铝，唯一的反应物是臭氧，并且该材料主要是四方晶相中的铪氧化物。

公开(公告)号：US20110223320A1

公开(公告)日：2011-09-15

申请号：US12720305

申请日：2010-03-09

Applicant: Zhe Song ,  Chris M. Carlson

Inventor： Zhe Song ,  Chris M. Carlson

IPC: B05D5/12 ,  C23C16/40

CPC classification number: C23C16/45553 ,  C23C16/405 ,  C23C16/45527 ,  H01G4/085 ,  H01G4/12 ,  H01G4/33 ,  H01L21/02159 ,  H01L21/02178 ,  H01L21/02189 ,  H01L21/02194 ,  H01L21/0228 ,  H01L28/40

Abstract: A method of forming a material over a substrate includes performing at least one iteration of the following temporally separated ALD-type sequence. First, an outermost surface of a substrate is contacted with a first precursor to chemisorb a first species onto the outermost surface from the first precursor. Second, the outermost surface is contacted with a second precursor to chemisorb a second species different from the first species onto the outermost surface from the second precursor. The first and second precursors include ligands and different central atoms. At least one of the first and second precursors includes at least two different composition ligands. The two different composition ligands are polyatomic or a lone halogen. Third, the chemisorbed first species and the chemisorbed second species are contacted with a reactant which reacts with the first species and with the second species to form a reaction product new outermost surface of the substrate.

Abstract translation: 在衬底上形成材料的方法包括进行以下时间上分离的ALD型序列的至少一次迭代。 首先，将基底的最外表面与第一前体接触，以将第一种类化学吸附到来自第一前体的最外表面上。 第二，最外面的表面与第二前体接触，以将与第一种不同的第二物种化学吸附到与第二前体的最外表面上。 第一和第二前体包括配体和不同的中心原子。 第一和第二前体中的至少一种前体包括至少两种不同的组成配体。 两种不同的组成配体是多原子或单卤素。 第三，化学吸附的第一物质和化学吸附的第二物质与反应物接触，反应物与第一物质和第二物质反应以形成反应产物基底的新的最外表面。

公开(公告)号：US07989362B2

公开(公告)日：2011-08-02

申请号：US12505963

申请日：2009-07-20

Applicant: Leonard Forbes ,  Kie Y. Ahn ,  Arup Bhattacharyya

Inventor： Leonard Forbes ,  Kie Y. Ahn ,  Arup Bhattacharyya

IPC: H01L21/20 ,  H01L23/62 ,  H01L27/108 ,  H01L29/78 ,  H01L29/94

CPC classification number: H01L21/02194 ,  C23C16/308 ,  C23C16/45529 ,  C23C16/45531 ,  H01L21/022 ,  H01L21/0228 ,  H01L21/02326 ,  H01L21/02332 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/28194 ,  H01L21/3142 ,  H01L21/3145 ,  H01L21/31645 ,  H01L29/517 ,  H01L29/518 ,  H01L29/6653 ,  H01L29/66545 ,  H01L29/7833 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Electronic apparatus and methods of forming the electronic apparatus include a hafnium lanthanide oxynitride film on a substrate for use in a variety of electronic systems. The hafnium lanthanide oxynitride film may be structured as one or more monolayers. Metal electrodes may be disposed on a dielectric containing a hafnium lanthanide oxynitride film.

Abstract translation: 形成电子设备的电子设备和方法包括用于各种电子系统的基板上的铪镧系元素氮氧化物膜。 铪镧系氮氧化物膜可以构成为一个或多个单层。 金属电极可以设置在含有铪镧系元素氮氧化物膜的电介质上。

公开(公告)号：US20110175207A1

公开(公告)日：2011-07-21

申请号：US13000809

申请日：2009-06-23

Applicant: Hanno Schnars ,  Mathias Wickleder ,  Katharina Al-Shamery

Inventor： Hanno Schnars ,  Mathias Wickleder ,  Katharina Al-Shamery

IPC: H01L23/58 ,  H01L21/473 ,  B05C13/02 ,  B05C11/00 ,  B05C11/11 ,  B05C3/02 ,  B05B17/00

CPC classification number: H01L21/02192 ,  C03C17/25 ,  C03C23/007 ,  C03C2217/228 ,  C03C2218/112 ,  C23C18/1216 ,  H01L21/02194 ,  H01L21/02205 ,  H01L21/02282 ,  H01L21/28194 ,  H01L21/316 ,  H01L29/517 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The invention relates to a method for producing metal oxide layers from oxides of rare earth metals on silicon-containing surfaces, to the device used to carry out the coating method, and to the use of the starting materials used in the method according to the invention for the coating method.

Abstract translation: 本发明涉及一种从含硅表面的稀土金属的氧化物生产金属氧化物层的方法，用于实施涂覆方法的装置以及根据本发明的方法中使用的原料的使用 用于涂布方法。