公开(公告)号：US07906840B2

公开(公告)日：2011-03-15

申请号：US12204677

申请日：2008-09-04

申请人： Kanji Otsuka ,  Yutaka Akiyama

发明人： Kanji Otsuka ,  Yutaka Akiyama

IPC分类号： H01L23/02

CPC分类号： H05K1/0231 ,  H01L23/50 ,  H01L23/5286 ,  H01L23/552 ,  H01L23/66 ,  H01L2223/6638 ,  H01L2224/16225 ,  H01L2924/19051 ,  H01L2924/3011 ,  H05K1/0263 ,  H05K2201/09672 ,  H05K2201/10545 ,  H05K2201/10734

摘要： A semiconductor integrated circuit package, a printed circuit board, a semiconductor apparatus, and a power supply wiring structure that allow attainment of stable power source and ground wiring without causing resonance even in a high-frequency bandwidth are provided. In an interior portion of the package, a power source wiring and a ground wiring constitute a pair wiring structure in which the power source wiring and the ground wiring are juxtaposed at a predetermined interval so as to establish electromagnetic coupling therebetween. A plurality of pair wiring structures are combined in such a manner that, when viewed in a section perpendicular to a wiring extending direction, the pair wiring assembly assumes a staggered (checkered) configuration. It is preferable that, each of the silicon chip and the printed circuit board, like the package, has pair wiring structures disposed inside.

摘要翻译： 提供了一种半导体集成电路封装，印刷电路板，半导体装置和电源布线结构，即使在高频带宽下也能够实现稳定的电源和接地布线而不引起共振。 在封装的内部，电源布线和接地布线构成一对布线结构，其中电源布线和接地布线以预定的间隔并置，以便在它们之间建立电磁耦合。 多个对布线结构以这样的方式组合，即当在与布线延伸方向垂直的截面中观察时，该对布线组件呈现交错（方格）的结构。 优选地，像封装一样，硅芯片和印刷电路板中的每一个具有配置在内部的配线结构。

公开(公告)号：US20110056645A1

公开(公告)日：2011-03-10

申请号：US12934403

申请日：2009-03-25

申请人： Yoshihiro Seimiya ,  Kanji Otsuka ,  Ai Mizuno

发明人： Yoshihiro Seimiya ,  Kanji Otsuka ,  Ai Mizuno

IPC分类号： B22D27/00 ,  C22B21/00

CPC分类号： B21J5/00 ,  B21J5/004 ,  B22D17/007 ,  B22D18/02 ,  B22F1/02 ,  B22F3/17 ,  B22F3/225 ,  B22F2998/10 ,  B22F2999/00 ,  C22C1/056 ,  C22C1/1078 ,  C22C32/0068 ,  B22F1/0003 ,  C22C1/1036 ,  B22F2201/02

摘要： A method of manufacturing a massive mixture of aluminum nitride and aluminum includes a first heat treatment process of manufacturing the massive mixture of aluminum nitride and aluminum by heating aluminum powder (21) and aluminum pieces (20) inserted into a vessel (13) at a temperature of a melting point of aluminum or higher under a nitrogen atmosphere. An oxide film is formed over the surface of the aluminum powder (21). The oxide film is, for example, a natural oxide film. The weight ratio of the aluminum powder (21) to the aluminum pieces (20) is, for example, 0.1 or less.

摘要翻译： 一种制造氮化铝和铝的大块混合物的方法包括通过加热铝粉（21）和插入容器（13）中的铝片（20）来制造氮化铝和铝的块状混合物的第一热处理工艺， 在氮气氛下的铝的熔点以上的温度。 在铝粉末（21）的表面上形成氧化膜。 氧化膜例如是天然氧化膜。 铝粉末（21）与铝片（20）的重量比例如为0.1以下。

公开(公告)号：US20100014211A1

公开(公告)日：2010-01-21

申请号：US12519020

申请日：2007-12-13

申请人： Kanji Otsuka

发明人： Kanji Otsuka

IPC分类号： H01G4/20 ,  H01G9/02

CPC分类号： H01G11/26 ,  H01G11/30 ,  H01G11/46 ,  Y02E60/13

摘要： A storage battery of the present invention is a capacitor-type storage battery having a short charging time and a long life, and capable of realizing a high output voltage. The storage battery includes a metal sheet 10 connected to a first terminal 22, a first metamaterial film 13 formed on a front surface of the metal sheet 10, and a first conductive film 12 formed on the first metamaterial film 13 and connected to a second terminal 21. The first metamaterial film 13 is a polycrystalline semiconductor film, and in each of crystal grains constituting the polycrystalline semiconductor film, the inside is of a first conductivity type, and the vicinity of interface is of a second conductivity type. An oxide insulating film may be formed on a surface of the metal sheet 10.

摘要翻译： 本发明的蓄电池是具有短的充电时间和长寿命并且能够实现高输出电压的电容器型蓄电池。 蓄电池包括连接到第一端子22的金属片10，形成在金属片10的前表面上的第一超材料膜13和形成在第一超材料膜13上并连接到第二端子的第一导电膜12 第一超材料膜13是多晶半导体膜，并且在构成多晶半导体膜的晶粒的每一个中，内部是第一导电型，并且界面附近是第二导电类型。 可以在金属片10的表面上形成氧化物绝缘膜。

公开(公告)号：US20080310521A1

公开(公告)日：2008-12-18

申请号：US12153786

申请日：2008-05-23

申请人： Kanji Otsuka ,  Yutaka Akiyama

发明人： Kanji Otsuka ,  Yutaka Akiyama

IPC分类号： H04B3/00 ,  H04L27/00 ,  H04L25/00

CPC分类号： H04L25/028

摘要： A signal transmission circuit includes a transmitting circuit for outputting a transmitting signal to a transmission line, a parallel circuit including a capacitor and a first resistance connected between an output terminal of the transmitting circuit and the transmission line, and a series circuit including an inductor and a second resistance connected between an output side of the parallel circuit and a ground.

摘要翻译： 信号传输电路包括用于向传输线输出发送信号的发送电路，包括电容器的并联电路和连接在发送电路的输出端子与传输线路之间的第一电阻，以及串联电路，包括电感器和 连接在并联电路的输出侧和地之间的第二电阻。

公开(公告)号：US5309011A

公开(公告)日：1994-05-03

申请号：US960848

申请日：1992-10-14

申请人： Masanori Tazunoki ,  Hiromitsu Mishimagi ,  Makoto Homma ,  Toshiyuki Sakuta ,  Hisashi Nakamura ,  Keiji Sasaki ,  Minoru Enomoto ,  Toshihiko Satoh ,  Kunizo Sahara ,  Shigeo Kuroda ,  Kanji Otsuka ,  Masao Kawamura ,  Hinoko Kurosawa ,  Kazuya Ito

发明人： Masanori Tazunoki ,  Hiromitsu Mishimagi ,  Makoto Homma ,  Toshiyuki Sakuta ,  Hisashi Nakamura ,  Keiji Sasaki ,  Minoru Enomoto ,  Toshihiko Satoh ,  Kunizo Sahara ,  Shigeo Kuroda ,  Kanji Otsuka ,  Masao Kawamura ,  Hinoko Kurosawa ,  Kazuya Ito

IPC分类号： H01L23/14 ,  H01L23/32 ,  H01L23/538 ,  H01L25/065 ,  H01L25/07 ,  H01L27/02 ,  H01L27/10 ,  H01L27/15

CPC分类号： H01L23/147 ,  H01L23/32 ,  H01L23/5385 ,  H01L25/0652 ,  H01L25/073 ,  H01L2224/0401 ,  H01L2224/16225 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48464 ,  H01L2224/48599 ,  H01L2224/48699 ,  H01L2224/73265 ,  H01L24/45 ,  H01L24/48 ,  H01L2924/00014 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01029 ,  H01L2924/01039 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/1305 ,  H01L2924/14 ,  H01L2924/15174 ,  H01L2924/15312 ,  H01L2924/16152 ,  H01L2924/3025

摘要： To achieve higher packaging density and one wafer level for a full-sized wafer memory, or wafer-scale integration memory system, the wafers are vertically stacked with each other at a predetermined interval. A packaging technique is improved in such a way that a memory system layout can be precisely realized and a precise through hole can be formed. Moreover, other chips are fixed on the wafer so as to achieve furthermore the high packaging density.

摘要翻译： 为了实现全尺寸晶片存储器或晶片级积分存储器系统的更高的封装密度和一个晶片级，晶片以预定的间隔彼此垂直堆叠。 改进了封装技术，使得可以精确地实现存储器系统布局并且可以形成精确的通孔。 此外，其他芯片固定在晶片上，从而进一步实现高封装密度。

公开(公告)号：US5217922A

公开(公告)日：1993-06-08

申请号：US810313

申请日：1991-12-19

申请人： Hiroshi Akasaki ,  Kanji Otsuka ,  Tetsuya Hayashida

发明人： Hiroshi Akasaki ,  Kanji Otsuka ,  Tetsuya Hayashida

IPC分类号： H01L21/52 ,  H01L21/50 ,  H01L21/58 ,  H01L21/60 ,  H01L23/12

CPC分类号： H01L24/32 ,  H01L21/50 ,  H01L24/81 ,  H01L24/83 ,  H01L2224/0401 ,  H01L2224/04026 ,  H01L2224/13111 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/29111 ,  H01L2224/73253 ,  H01L2224/81801 ,  H01L2224/8319 ,  H01L2224/8385 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01024 ,  H01L2924/01025 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/07802 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/1517 ,  H01L2924/15311 ,  H01L2924/16152 ,  H01L2924/166 ,  H01L2924/181 ,  H01L2924/19043 ,  H01L2924/351 ,  Y10T29/49144 ,  Y10T29/49149

摘要： A method of manufacturing a semiconductor device wherein the back surface of a semiconductor chip is adhered closely to a substrate or a seal member through a soldering material or the like, and a metallized layer is formed on the back surface of the chip for attaining good adhesion. The metallized layer according to the present invention is a layer formed by laminating a metal silicide, a barrier metal and an oxidation preventing metal successively on the back of the chip. The layer of the metal silicide can be formed in a known heat treatment process, for example, simultaneously with the formation of bump electrodes, on a main surface of the semiconductor chip by the heat used at the time of forming such bump electrodes, or simultaneously with the mounting of the semiconductor chip by the heat used at the time of the chip mounting.

摘要翻译： 一种制造半导体器件的方法，其中半导体芯片的背表面通过焊接材料等紧密地粘合到基底或密封构件上，并且在芯片的背面上形成金属化层以获得良好的粘附力 。 根据本发明的金属化层是通过在芯片的背面依次层叠金属硅化物，阻挡金属和防氧化金属形成的层。 金属硅化物层可以在已知的热处理工艺中形成，例如，在形成凸起电极的同时形成凸起电极的同时，通过在形成这种凸起电极时使用的热量在半导体芯片的主表面上形成 通过在芯片安装时使用的热量来安装半导体芯片。

公开(公告)号：US5126821A

公开(公告)日：1992-06-30

申请号：US529448

申请日：1990-05-29

申请人： Takayuki Okinaga ,  Hiroshi Tachi ,  Hiroshi Ozaki ,  Kanji Otsuka ,  Michiaki Furukawa ,  Yasuyuki Yamasaki

发明人： Takayuki Okinaga ,  Hiroshi Tachi ,  Hiroshi Ozaki ,  Kanji Otsuka ,  Michiaki Furukawa ,  Yasuyuki Yamasaki

IPC分类号： H01L21/52 ,  H01L21/58 ,  H01L23/28 ,  H01L23/495 ,  H01L23/498 ,  H01L23/50

CPC分类号： H01L24/32 ,  H01L23/4951 ,  H01L23/49558 ,  H01L23/49586 ,  H01L23/49861 ,  H01L2224/05554 ,  H01L2224/27013 ,  H01L2224/32245 ,  H01L2224/451 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/4826 ,  H01L2224/48465 ,  H01L2224/73215 ,  H01L2224/73265 ,  H01L2224/83051 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/14 ,  H01L2924/181 ,  Y10S257/906

摘要： According to the present invention, as improvement in the adhesion of inner leads with a packaging resin in a resin-sealed semiconductor device is attained by spreading leads on or near the circuit-forming face of a pellet, or on or near the main non-circuit-forming face of the pellet to extend the lengths of the inner leads on or under the pellet.

摘要翻译： 根据本发明，通过在芯片的电路形成面上或靠近主非易失性存储器的电路形成面上或其附近扩散引线，可以实现在树脂密封半导体器件中内封装树脂与内包层树脂的密合性的提高， 颗粒的电路形成面，以延伸颗粒上或下方的内引线的长度。

公开(公告)号：US4965660A

公开(公告)日：1990-10-23

申请号：US364537

申请日：1989-06-12

申请人： Satoru Ogihara ,  Hironori Kodama ,  Nobuyuki Ushifusa ,  Kanji Otsuka

发明人： Satoru Ogihara ,  Hironori Kodama ,  Nobuyuki Ushifusa ,  Kanji Otsuka

IPC分类号： H01L23/36 ,  H01L23/02 ,  H01L23/057 ,  H01L23/367 ,  H01L23/373

CPC分类号： H01L23/057 ,  H01L23/367 ,  H01L23/3737 ,  H01L2224/32188 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L24/48 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01079 ,  H01L2924/14 ,  H01L2924/16152 ,  H01L2924/16195

摘要： An integrated circuit package produced by bonding a rear surface of an insulating substrate enclosed in the package to a heat sink such as a cooling fin by a resinous adhesive, which may include one or more fillers, having a Young's modulus of 500 kg/cm.sup.2 or less when formed into a film, has high reliability at the bonding portion and withstands without damages even if subjected to thermal shocks.

摘要翻译： 一种集成电路封装件，其通过将包含在封装中的绝缘基板的后表面通过树脂粘合剂（例如可以包括一个或多个填料）的散热器（例如冷却翅片）结合，其杨氏模量为500kg / cm 2，或 在形成膜时较少，在接合部分具有高可靠性，并且即使遭受热冲击也能够承受损坏。

公开(公告)号：US4541003A

公开(公告)日：1985-09-10

申请号：US388216

申请日：1982-06-14

申请人： Kanji Otsuka ,  Kazumichi Mitsusada ,  Masao Sekibata ,  Shinji Ohnishi

发明人： Kanji Otsuka ,  Kazumichi Mitsusada ,  Masao Sekibata ,  Shinji Ohnishi

IPC分类号： H01L23/02 ,  H01L21/26 ,  H01L21/314 ,  H01L23/057 ,  H01L23/24 ,  H01L23/556 ,  H01L27/10 ,  G11C11/40 ,  H01L23/08 ,  H01L27/04

CPC分类号： H01L23/556 ,  H01L21/26 ,  H01L23/057 ,  H01L23/24 ,  H01L2224/45124 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L24/45 ,  H01L24/48 ,  H01L2924/00014 ,  H01L2924/01019 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15153 ,  H01L2924/15165 ,  H01L2924/16152 ,  H01L2924/1616 ,  H01L2924/1617 ,  H01L2924/16195 ,  H01L2924/19041 ,  H01L2924/3025

摘要： The present invention relates to a semiconductor device having a semiconductor element which is sealed by a ceramic package, wherein a shielding member is provided near it from upper surface of the semiconductor element to shield the alpha-particles radiated from the package.

摘要翻译： 本发明涉及一种具有由陶瓷封装密封的半导体元件的半导体器件，其中屏蔽部件从半导体元件的上表面附近设置，以遮蔽从封装辐射的α粒子。

公开(公告)号：US4447661A

公开(公告)日：1984-05-08

申请号：US415236

申请日：1982-09-07

申请人： Satoshi Hoshiyama ,  Hiroyuki Muto ,  Shuzo Shinke ,  Kanji Otsuka ,  Shinichiro Takigawa ,  Hiroyuki Yamazaki

发明人： Satoshi Hoshiyama ,  Hiroyuki Muto ,  Shuzo Shinke ,  Kanji Otsuka ,  Shinichiro Takigawa ,  Hiroyuki Yamazaki

IPC分类号： B01J31/00 ,  B01J31/20 ,  B01J31/22 ,  C07B61/00 ,  C07C27/00 ,  C07C29/141 ,  C07C29/16 ,  C07C31/02 ,  C07C31/125 ,  C07C31/13 ,  C07C31/135 ,  C07C45/50 ,  C07C67/00

CPC分类号： C07C45/50 ,  C07C29/141 ,  C07C29/16 ,  C07C31/125 ,  C07C31/1355 ,  C07C2101/14

摘要： In a process for producing an alcohol by hydroformylation comprises reacting a straight chained, branched or alicyclic mono-olefin having from 3 to 20 carbon atoms with carbon monoxide and hydrogen to form an alcohol having carbon atoms greater in number by one than the carbon atoms of the mono-olefin, the improvement comprises(a) a fist step in which the mono-olefin is hydroformylated with use of a cobalt catalyst in the presence of a gas mixture of carbon monoxide and hydrogen at a high temperature under high pressure to selectively form an aldehyde at a conversion of the mono-olefin being from 50 to 95 mol % while suppressing the formation of an alcohol, and the cobalt catalyst is then removed from the unreacted olefin and the formed aldehyde by decomposition or extraction, and(b) a second step in which the mixture of the unreacted mono-olefin and the formed aldehyde freed from the cobalt catalyst in the first step is reacted with a gas mixture of carbon monoxide and hydrogen with use of a cobalt organophophine complex catalyst at a high temperature under high pressure thereby simultaneously hydroformylating the unreacted mono-olefin and hydrogenating the aldehyde to form the alcohol.

摘要翻译： 在通过加氢甲酰化生产醇的方法中，包括使具有3至20个碳原子的直链，支链或脂环族单烯烃与一氧化碳和氢反应，以形成碳原子数大于碳原子数 单烯烃的改进包括（a）第一步，其中在高温下在高压下在一氧化碳和氢气的混合物存在下，使用钴催化剂将单烯烃加氢甲酰化以选择性地形成 在单烯烃的转化率为50〜95摩尔％的同时抑制醇的形成，然后通过分解或提取将钴催化剂从未反应的烯烃和形成的醛中除去，和（b） 在第一步骤中将未反应的单烯烃和脱离钴催化剂的形成的醛的混合物与一氧化碳和氢气的气体混合物与 在高温下在高压下使用钴有机磷配合物催化剂，从而同时加氢甲酰化未反应的单烯烃并氢化醛形成醇。