公开(公告)号：US5223113A

公开(公告)日：1993-06-29

申请号：US732240

申请日：1991-07-18

申请人： Satoshi Kaneko ,  Taichi Fugita ,  Toshihisa Nozawa ,  Yoichi Ueda ,  Yukimasa Yoshida ,  Isahiro Hasegawa ,  Haruo Okano

发明人： Satoshi Kaneko ,  Taichi Fugita ,  Toshihisa Nozawa ,  Yoichi Ueda ,  Yukimasa Yoshida ,  Isahiro Hasegawa ,  Haruo Okano

IPC分类号： H01L21/00 ,  H01L21/677

CPC分类号： H01L21/67126 ,  H01L21/67103 ,  H01L21/67742

摘要： A semiconductor wafers processing apparatus comprises a susceptor for mounting and fixing a wafer thereon, a cooling jacket for cooling the susceptor, a process chamber whose wall encloses the susceptor and the cooling jacket, an O-ring for shielding from process atmosphere in the process chamber a clearance formed between an inner cylinder of the process chamber wall and the outer circumferences of the susceptor and the cooling jacket, and an exhaust pump for exhausting gas in the clearance. It further comprises load lock chambers for carrying the wafer into and out of the process chamber, and heat insulating members interposed between those faces of the process chamber and each of the load lock chambers which are opposed to each other. The process chamber wall can be heat-insulated from the susceptor and the cooling jacket by the exhausted clearance and the process chamber can be heat-insulated from each of the load lock chambers by the heat insulating members.

公开(公告)号：US5192714A

公开(公告)日：1993-03-09

申请号：US654895

申请日：1991-02-13

申请人： Kyoichi Suguro ,  Haruo Okano

发明人： Kyoichi Suguro ,  Haruo Okano

IPC分类号： H01L21/28 ,  H01L21/285 ,  H01L21/316 ,  H01L21/3205 ,  H01L21/336 ,  H01L21/762 ,  H01L21/768 ,  H01L21/8234 ,  H01L27/088 ,  H01L29/78

CPC分类号： H01L21/02164 ,  H01L21/0217 ,  H01L21/022 ,  H01L21/02208 ,  H01L21/02238 ,  H01L21/02247 ,  H01L21/02252 ,  H01L21/02271 ,  H01L21/02282 ,  H01L21/0234 ,  H01L21/31608 ,  H01L21/76879 ,  Y10S148/117

摘要： A method of manufacturing a semiconductor device includes the steps of forming a first insulating layer having a hole on a substrate, selectively forming a conductive layer in the hole, selectively forming a second insulating layer on the first insulating layer, patterning the second insulating layer, and forming an interconnection layer in an opening portion of the second insulating layer formed by patterning so as to be electrically connected to the conductive layer.

摘要翻译： 一种制造半导体器件的方法包括以下步骤：在衬底上形成具有孔的第一绝缘层，在孔中选择性地形成导电层，在第一绝缘层上选择性地形成第二绝缘层，图案化第二绝缘层， 以及在通过图案化形成的第二绝缘层的开口部分中形成互连层，从而与导电层电连接。

公开(公告)号：US5147497A

公开(公告)日：1992-09-15

申请号：US731261

申请日：1991-07-17

申请人： Toshihisa Nozawa ,  Osamu Kamikanda ,  Yukimasa Yoshida ,  Haruo Okano

发明人： Toshihisa Nozawa ,  Osamu Kamikanda ,  Yukimasa Yoshida ,  Haruo Okano

IPC分类号： C23F4/00 ,  G01K7/00 ,  G01K7/26 ,  H01J37/32 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/66

CPC分类号： H01J37/32935

摘要： A system for measuring a temperature of a high-frequency electrode of a plasma etching apparatus has a temperature detecting element for detecting a temperature, a metal sheath member in which the temperature detecting element is provided to be insulated from it and which is kept in a DC floating state, an insulating member for insulating the sheath member from the high-frequency electrode, and a filter for removing a high-frequency component of an electrical signal sent from the temperature detecting element.

公开(公告)号：US5094879A

公开(公告)日：1992-03-10

申请号：US544595

申请日：1990-06-27

申请人： Tetsuo Matsuda ,  Haruo Okano ,  Tokuhisa Ohiwa

发明人： Tetsuo Matsuda ,  Haruo Okano ,  Tokuhisa Ohiwa

IPC分类号： C23C16/50 ,  C23C14/22 ,  C23C16/452 ,  C23C16/511 ,  H01J37/32 ,  H01L21/205 ,  H01L21/31

CPC分类号： H01J37/32422 ,  C23C14/221 ,  C23C16/452 ,  H01J37/32357

摘要： According to a thin film forming method, at least one type of gas is activated to produce a plurality of species having positive or negative charges. The plurality of species pass through an electric field or magnetic field to extract specific species. The specific species are supplied to a substrate surface. Thereafter, the specific species are chemically reacted with each other to form a thin film. This extraction is performed using a difference in track corresponding to a ratio of mass to charge of the species passing through the electric field.

摘要翻译： 根据薄膜形成方法，至少一种类型的气体被激活以产生具有正或负电荷的多种物质。 多个物种通过电场或磁场提取特定物种。 特定的物质被提供给基底表面。 此后，特定物质彼此化学反应以形成薄膜。 使用对应于通过电场的物质的质量与电荷的比率的轨迹差进行该提取。

公开(公告)号：US5030319A

公开(公告)日：1991-07-09

申请号：US457946

申请日：1989-12-27

申请人： Hirotaka Nishino ,  Nobuo Hayasaka ,  Haruo Okano

发明人： Hirotaka Nishino ,  Nobuo Hayasaka ,  Haruo Okano

IPC分类号： H01L21/311 ,  H01L21/768

CPC分类号： H01L21/76802 ,  H01L21/31116

摘要： Oxide material, on a substrate, in a reactor, is etched by dissolving a hydrogen halide reaction product in a liquid phase reaction product. Both the hydrogen halide and liquid phase reaction products are produced through a chemical reaction of a reactive gas containing hydrogen and halogen elements as well as at least one gaseous compound which has been remotely activated. The liquid phase reaction product is obtained by condensation on the oxide material. The use of charged particle beams and irradiating light is discussed.

公开(公告)号：US4844774A

公开(公告)日：1989-07-04

申请号：US180687

申请日：1988-04-08

申请人： Makoto Sekine ,  Haruo Okano ,  Yasuhiro Horiike

发明人： Makoto Sekine ,  Haruo Okano ,  Yasuhiro Horiike

IPC分类号： H01L21/205 ,  C23C16/48 ,  C23F4/00 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/312 ,  H01L21/3213

CPC分类号： C23C16/483 ,  C23C16/482 ,  C23F4/00 ,  H01L21/30655 ,  H01L21/31116 ,  H01L21/312 ,  H01L21/32137 ,  H01L21/32139

摘要： A phototreating method comprises the steps of introducing a photoreactive gas into a chamber housing a workpiece, emitting first light substantially perpendicularly to a surface of the workpiece, and emitting second light substantially perpendicularly to the surface of the workpiece simultaneously with or after radiation of the first light. The surface of the workpiece is treated utilizing a photochemical reaction of the photoreactive gas caused by radiation of the first light and/or the second light.

摘要翻译： 光复制方法包括以下步骤：将光反应气体引入到容纳工件的腔室中，发射基本上垂直于工件表面的第一光，并且在第一和第二辐射辐射之后或之后同时发射基本垂直于工件表面的第二光 光。 使用由第一光和/或第二光的辐射引起的光反应性气体的光化学反应来处理工件的表面。

公开(公告)号：US4698238A

公开(公告)日：1987-10-06

申请号：US826379

申请日：1986-02-05

申请人： Nobuo Hayasaka ,  Haruo Okano ,  Yasuhiro Horiike

发明人： Nobuo Hayasaka ,  Haruo Okano ,  Yasuhiro Horiike

IPC分类号： H01L21/302 ,  C23F1/02 ,  G03F7/004 ,  H01L21/268 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/312 ,  H01L21/3213 ,  B05D3/06

CPC分类号： G03F7/0041 ,  C23F1/02 ,  H01L21/268 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/312 ,  H01L21/32135 ,  H01L21/32137

摘要： A pattern is formed by providing a reaction field in which a photo-induced reaction proceeds when a substrate is irradiated with light so as to form a pattern on the substrate, and setting, in the reaction field, conditions for establishing a nonlinear relationship between the intensity of the light and the rate of the photo-induced reaction. The substrate is selectively irradiated with light in the reaction field under the conditions set therein so as to selectively form a pattern in the irradiated portion of the substrate in accordance with the selective irradiation.

摘要翻译： 通过提供在基板被光照射时进行光诱导反应以在基板上形成图案的反应场形成图案，并且在反应场中设定用于建立非线性关系的条件 光的强度和光诱导反应的速率。 在反应场中，在设定的条件下，用光选择性地照射基板，从而根据选择性照射选择性地在基板的照射部分中形成图案。

公开(公告)号：US4600492A

公开(公告)日：1986-07-15

申请号：US758505

申请日：1985-07-24

申请人： Hirosuke Ooshio ,  Tetsuo Aikawa ,  Hidetaka Jo ,  Haruo Okano ,  Takashi Yamazaki

发明人： Hirosuke Ooshio ,  Tetsuo Aikawa ,  Hidetaka Jo ,  Haruo Okano ,  Takashi Yamazaki

IPC分类号： C23C14/36 ,  C23C14/35 ,  H01J37/34

CPC分类号： H01J37/3455 ,  H01J37/3408

摘要： A plurality of bar-like magnets are arranged in a vacuum chamber at an equal space interval to form a plurality of strong magnetic fields in a stripe-pattern form and the magnets are moved reciprocally in the direction of arrangement of the magnetic fields while changing gradually the stop points of the magnets over a work to be processed by etching or sputtering in a step-like manner so that the integral effect of each magnetic field acting on the work is uniform over the entire region of the work.

摘要翻译： 多个棒状磁体以等间距布置在真空室中，以形成条纹图案形式的多个强磁场，并且磁体在磁场的排列方向上往复移动，同时逐渐变化 通过蚀刻或溅射以阶梯状方式处理的工件上的磁体的停止点，使得作用在工件上的每个磁场的整体效应在工件的整个区域上是均匀的。

公开(公告)号：US4178396A

公开(公告)日：1979-12-11

申请号：US933844

申请日：1978-08-15

申请人： Haruo Okano ,  Nozomu Harada ,  Nobuhisa Kubota

发明人： Haruo Okano ,  Nozomu Harada ,  Nobuhisa Kubota

IPC分类号： H01L21/28 ,  H01L21/283 ,  H01L21/31 ,  H01L21/321 ,  H01L21/339 ,  H01L21/8247 ,  H01L29/762 ,  H01L29/788 ,  H01L29/792 ,  H01L21/312 ,  C03C15/00 ,  C03C25/06

CPC分类号： H01L29/66954 ,  H01L21/32105

摘要： A method of forming an insulating film of high breakdown voltage on a polycrystalline substance layer which comprises the steps of preparing the polycrystalline substance layer; selectively removing the polycrystalline substance layer; heat-treating for the first time that portion of the polycrystalline substance layer which is left after said selective removal in an oxidizing atmosphere to provide an oxide layer; removing the whole of said oxide layer; and heat-treating for the second time in an oxidizing atmosphere the polycrystalline substance layer which is now exposed due to removal of said oxide layer, thereby forming a second oxide layer acting as an insulating film on said exposed surface.

摘要翻译： 一种在多晶物质层上形成高击穿电压的绝缘膜的方法，包括制备多晶物质层的步骤; 选择性地除去多晶物质层; 首先在氧化气氛中选择性除去之后留下多晶物质层的部分进行热处理以提供氧化物层; 除去整个所述氧化物层; 并且在氧化气氛中第二次热处理由于去除所述氧化物层而现在暴露的多晶物质层，从而在所述暴露表面上形成用作绝缘膜的第二氧化物层。

公开(公告)号：US5731634A

公开(公告)日：1998-03-24

申请号：US659389

申请日：1996-06-06

申请人： Mie Matsuo ,  Haruo Okano ,  Nobuo Hayasaka ,  Kyoichi Suguro ,  Hideshi Miyajima ,  Jun-ichi Wada

发明人： Mie Matsuo ,  Haruo Okano ,  Nobuo Hayasaka ,  Kyoichi Suguro ,  Hideshi Miyajima ,  Jun-ichi Wada

IPC分类号： H01L21/768 ,  H01L23/528 ,  H01L23/532 ,  H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L21/76877 ,  H01L21/28518 ,  H01L21/76823 ,  H01L21/76838 ,  H01L21/76849 ,  H01L23/5283 ,  H01L23/53238 ,  H01L2924/0002

摘要： The present invention provides a method of manufacturing a semiconductor device, including the steps of forming a metal oxide film made of a metal oxide having a decrease in standard free energy smaller than a decrease in standard free energy of hydrogen oxide or of carbon oxide, on an insulating film formed on a semiconductor substrate, forming a metal oxide film pattern by subjecting a treatment to the metal oxide film, and converting said metal oxide pattern into at least one of an electrode and a wiring made of a metal which is a main component constituting the metal oxide, by reducing the metal oxide film pattern at a temperature of 80.degree. to 500.degree. C.

摘要翻译： 本发明提供了一种制造半导体器件的方法，包括以下步骤：形成由金属氧化物制成的金属氧化物膜，其标准自由能的降低小于氧化物或氧化碳的标准自由能的降低，对 形成在半导体基板上的绝缘膜，通过对金属氧化物膜进行处理形成金属氧化物膜图案，并将所述金属氧化物图案转换成电极和由作为主要成分的金属制成的布线中的至少一个 通过在80℃〜500℃的温度下还原金属氧化物膜图案来构成金属氧化物。