公开(公告)号：US20130256146A1

公开(公告)日：2013-10-03

申请号：US13853935

申请日：2013-03-29

申请人： Lee Peng Chua ,  Steven T. Mayer ,  Thomas A. Ponnuswamy ,  Santosh Kumar

发明人： Lee Peng Chua ,  Steven T. Mayer ,  Thomas A. Ponnuswamy ,  Santosh Kumar

IPC分类号： C25F1/00

CPC分类号： C25F1/00 ,  C25D17/001 ,  C25D17/06 ,  C25D21/00 ,  C25D21/12 ,  C25F7/00 ,  H01L21/67766 ,  H01L21/67769 ,  H01L21/68707 ,  Y10S901/02

摘要： Provided are cleaning methods and systems to remove unintended metallic deposits from electroplating apparatuses using reverse current deplating techniques. Such cleaning involves positioning a cleaning (deplating) disk in an electroplating cup similar to a regular processed substrate. The front surface of the cleaning disk includes a corrosion resistant conductive material to form electrical connections to deposits on the cup's surfaces. The disk is sealed in the cup and submerged into a plating solution. A reverse current is then applied to the front conductive surface of the disk to initiate deplating of the deposits. Sealing compression in the cup may change during cleaning to cause different deformation of the lip seal and to form new electrical connections to the deposits. The proposed cleaning may be applied to remove deposits formed during electroplating of alloys, in particular, tin-silver alloys widely used for semiconductor and wafer level packaging.

摘要翻译： 提供了使用反向电流去除技术从电镀设备中除去非预期的金属沉积物的清洁方法和系统。 这样的清洁包括将清洁（脱落）盘定位在类似于经常处理的基底的电镀杯中。 清洁盘的前表面包括耐腐蚀的导电材料以形成电连接以沉积在杯的表面上。 将盘密封在杯中并浸没在电镀液中。 然后将反向电流施加到盘的前导电表面以开始沉积物的脱落。 杯子内的密封压缩可能在清洁过程中发生变化，导致唇形密封件发生不同的变形，并形成与沉积物的新的电气连接。 所提出的清洁可以用于去除在电镀期间形成的沉积物，特别是广泛用于半导体和晶片级封装的锡 - 银合金。

公开(公告)号：US08450210B1

公开(公告)日：2013-05-28

申请号：US13218283

申请日：2011-08-25

申请人： Evan E. Patton ,  Theodore Cacouris ,  Eliot Broadbent ,  Steven T. Mayer

发明人： Evan E. Patton ,  Theodore Cacouris ,  Eliot Broadbent ,  Steven T. Mayer

IPC分类号： H01L21/445 ,  C25D17/28

CPC分类号： C25D17/001 ,  C25D3/38 ,  C25D5/10 ,  H01L21/2885 ,  H01L21/67161 ,  H01L21/6719 ,  H01L21/6723 ,  H01L21/67751 ,  H01L21/76877 ,  Y10T29/41

摘要： Methods and apparatus are provided for processing semiconductor wafers sequentially. Sequential processes employ multi-station processing modules, where particular encompassing wafer processes are divided into sub-processes, each optimized for increasing wafer to wafer uniformity, result quality, and overall wafer throughput. In one example, a copper electroplating module includes separate stations for wetting, initiation, seed layer repair, fill, overburden, reclaim, and rinse.

摘要翻译： 提供了顺序处理半导体晶片的方法和装置。 顺序过程采用多工位处理模块，其中特别包含的晶片工艺被分为子工艺，每个子工艺被优化用于增加晶圆到晶片的均匀性，结果质量和整个晶片生产量。 在一个示例中，铜电镀模块包括用于润湿，起始，种子层修复，填充，覆盖层，回收和冲洗的分离站。

公开(公告)号：US08158532B2

公开(公告)日：2012-04-17

申请号：US11602128

申请日：2006-11-20

申请人： Steven T. Mayer ,  Mark L. Rea ,  Richard S. Hill ,  Avishai Kepten ,  R. Marshall Stowell ,  Eric G. Webb

发明人： Steven T. Mayer ,  Mark L. Rea ,  Richard S. Hill ,  Avishai Kepten ,  R. Marshall Stowell ,  Eric G. Webb

IPC分类号： H01L21/302

CPC分类号： C25D17/14 ,  B23H5/08 ,  C25D5/02 ,  C25D5/06 ,  C25D5/08 ,  C25D5/34 ,  C25D7/123 ,  C25D17/001 ,  C25D17/06 ,  C25F3/16 ,  C25F3/30 ,  H01L21/02068 ,  H01L21/2885 ,  H01L21/32115 ,  H01L21/3212 ,  H01L21/32134 ,  H01L21/7684 ,  H01L21/76849 ,  H01L21/76877

摘要： Plating accelerator is applied selectively to a substantially-unfilled wide (e.g., low-aspect-ratio feature cavity. Then, plating of metal is conducted to fill the wide feature cavity and to form an embossed structure in which the height of a wide-feature metal protrusion over the metal-filled wide-feature cavity is higher than the height of metal over field regions. Most of the overburden metal is removed using non-contact techniques, such as chemical wet etching. Metal above the wide feature cavity protects the metal-filled wide-feature interconnect against dishing, and improved planarization techniques avoid erosion of the metal interconnect and dielectric insulating layer. In some embodiments, plating of metal onto a substrate is conducted to fill narrow (e.g., high-aspect-ratio feature cavities) in the dielectric layer before selective application of plating accelerator and filling of the wide feature cavity.

摘要翻译： 电镀加速器选择性地施加到基本上未填充的宽（例如，低纵横比特征空腔）上，然后进行金属电镀以填充宽特征空腔并形成压花结构，其中宽特征 在金属填充的宽特征空腔上的金属突起高于金属在场区域的高度，大多数覆盖层金属被使用非接触技术（例如化学湿法蚀刻）去除，在宽特征腔上方的金属保护金属 在一些实施例中，将金属电镀到衬底上以填充狭窄（例如，高纵横比特征腔），并且可以避免金属互连和介电绝缘层的侵蚀。 在介电层中选择性地施加电镀加速器和填充宽特征腔。

公开(公告)号：US20120000786A1

公开(公告)日：2012-01-05

申请号：US13172642

申请日：2011-06-29

申请人： Steven T. Mayer ,  David W. Porter

发明人： Steven T. Mayer ,  David W. Porter

IPC分类号： C25D5/08 ,  C25D17/00

CPC分类号： C25D17/002 ,  C25D5/04 ,  C25D5/08 ,  C25D17/001 ,  C25D17/008 ,  C25D17/02 ,  C25D21/10

摘要： Described are apparatus and methods for electroplating one or more metals onto a substrate. Embodiments include electroplating apparatus configured for, and methods including, efficient mass transfer during plating so that highly uniform plating layers are obtained. In specific embodiments, the mass transfer is achieved using a combination of impinging flow and shear flow at the wafer surface.

摘要翻译： 描述了将一种或多种金属电镀到基底上的装置和方法。 实施例包括电镀设备，以及包括在电镀过程中有效传质的方法，从而获得高度均匀的镀层。 在具体实施例中，使用在晶片表面处冲击流动和剪切流动的组合来实现传质。

公开(公告)号：USD648289S1

公开(公告)日：2011-11-08

申请号：US29377521

申请日：2010-10-21

申请人： Steven T. Mayer ,  David Porter ,  Robert Rash

设计人： Steven T. Mayer ,  David Porter ,  Robert Rash

公开(公告)号：US08053861B2

公开(公告)日：2011-11-08

申请号：US12359997

申请日：2009-01-26

申请人： Thomas W. Mountsier ,  Roey Shaviv ,  Steven T. Mayer ,  Ronald A. Powell

发明人： Thomas W. Mountsier ,  Roey Shaviv ,  Steven T. Mayer ,  Ronald A. Powell

IPC分类号： H01L21/70

CPC分类号： C23C14/0623 ,  C23C14/06 ,  C23C14/3414 ,  H01L21/2855 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76856 ,  H01L21/76858 ,  H01L21/76864 ,  H01L21/76873 ,  H01L21/76898 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： Provided are methods and apparatuses for depositing barrier layers for blocking diffusion of conductive materials from conductive lines into dielectric materials in integrated circuits. The barrier layer may contain copper. In some embodiments, the layers have conductivity sufficient for direct electroplating of conductive materials without needing intermediate seed layers. Such barrier layers may be used with circuits lines that are less than 65 nm wide and, in certain embodiments, less than 40 nm wide. The barrier layer may be passivated to form easily removable layers including sulfides, selenides, and/or tellurides of the materials in the layer.

摘要翻译： 提供了用于沉积阻挡层的方法和装置，用于阻挡导电材料从集成电路中的导电线扩散到电介质材料中。 阻挡层可以含有铜。 在一些实施例中，这些层具有足够的导电性，用于直接电镀导电材料，而不需要中间种子层。 这样的阻挡层可以与小于65nm宽的电路线并且在某些实施例中小于40nm宽使用。 阻挡层可以被钝化以形成容易去除的层，包括层中的材料的硫化物，硒化物和/或碲化物。

公开(公告)号：US20100320609A1

公开(公告)日：2010-12-23

申请号：US12684787

申请日：2010-01-08

申请人： Steven T. Mayer ,  David W. Porter ,  Mark J. Willey

发明人： Steven T. Mayer ,  David W. Porter ,  Mark J. Willey

IPC分类号： H01L21/3205 ,  H01L21/302 ,  H01L23/52

CPC分类号： H01L21/2885 ,  C25D3/38 ,  C25D5/003 ,  C25D5/02 ,  C25D5/34 ,  C25D7/123 ,  C25D17/001 ,  C25D21/04 ,  H01L21/76861 ,  H01L21/76898

摘要： Disclosed are pre-wetting apparatus designs and methods. These apparatus designs and methods are used to pre-wet a wafer prior to plating a metal on the surface of the wafer. Disclosed compositions of the pre-wetting fluid prevent corrosion of a seed layer on the wafer and also improve the filling rates of features on the wafer.

摘要翻译： 公开了预润湿装置的设计和方法。 这些设备的设计和方法用于在将晶片上的金属镀覆在晶片表面之前预先浸湿晶片。 公开的预润湿流体的组合物防止晶片上种子层的腐蚀，并且还改善晶片上特征的填充率。

公开(公告)号：US20100055924A1

公开(公告)日：2010-03-04

申请号：US12199412

申请日：2008-08-27

申请人： Kousik Ganesan ,  Shanthinath Ghongadi ,  Tariq Majid ,  Aaron Labrie ,  Steven T. Mayer

发明人： Kousik Ganesan ,  Shanthinath Ghongadi ,  Tariq Majid ,  Aaron Labrie ,  Steven T. Mayer

IPC分类号： H01L21/306

CPC分类号： H01L21/6708 ,  H01L21/02068 ,  H01L21/02087 ,  H01L21/0209 ,  H01L21/32134 ,  H01L21/67745 ,  H01L21/68735 ,  H01L21/68785

摘要： Chemical etching methods and associated modules for performing the removal of metal from the edge bevel region of a semiconductor wafer are described. The methods and systems provide the thin layer of pre-rinsing liquid before applying etchant at the edge bevel region of the wafer. The etchant is less diluted and diffuses faster through a thinned layer of rinsing liquid. An edge bevel removal embodiment involving that is particularly effective at reducing process time, narrowing the metal taper and allowing for subsequent chemical mechanical polishing, is disclosed.

摘要翻译： 描述了用于从半导体晶片的边缘斜面区域去除金属的化学蚀刻方法和相关模块。 在晶片的边缘斜面区域上施加蚀刻剂之前，该方法和系统提供了薄层的预漂洗液体。 蚀刻剂较少稀释，并通过稀薄的冲洗液层更快地扩散。 公开了一种边缘斜面去除实施例，其涉及在减少加工时间，使金属锥度变窄并允许随后的化学机械抛光方面特别有效。

公开(公告)号：US07622024B1

公开(公告)日：2009-11-24

申请号：US11040359

申请日：2005-01-20

申请人： Steven T. Mayer ,  Jonathan D. Reid

发明人： Steven T. Mayer ,  Jonathan D. Reid

IPC分类号： C25D17/00 ,  C25D5/00

CPC分类号： C25D17/12 ,  C25D7/123 ,  C25D17/001 ,  C25D17/008 ,  H01L21/2885 ,  Y10S204/07

摘要： A substantially uniform layer of a metal is electroplated onto a work piece having a seed layer thereon. This is accomplished by employing a “high resistance ionic current source,” which solves the terminal problem by placing a highly resistive membrane (e.g., a microporous ceramic or fretted glass element) in close proximity to the wafer, thereby swamping the system's resistance. The membrane thereby approximates a constant current source. By keeping the wafer close to the membrane surface, the ionic resistance from the top of the membrane to the surface is much less than the ionic path resistance to the wafer edge, substantially compensating for the sheet resistance in the thin metal film and directing additional current over the center and middle of the wafer.

摘要翻译： 将基本上均匀的金属层电镀在其上具有种子层的工件上。 这是通过使用“高电阻离子电流源”来实现的，其通过将高电阻膜（例如，微孔陶瓷或微波玻璃元件）放置在靠近晶片来解决端子问题，从而使系统的电阻变化。 因此，膜近似于恒定电流源。 通过保持晶片靠近膜表面，从膜顶部到表面的离子电阻远小于对晶片边缘的离子路径电阻，基本上补偿薄金属膜中的薄层电阻并引导附加电流 在晶片的中心和中间。

公开(公告)号：US20090283499A1

公开(公告)日：2009-11-19

申请号：US11888312

申请日：2007-07-30

申请人： Steven T. Mayer ,  Daniel A. Koos ,  Eric Webb

发明人： Steven T. Mayer ,  Daniel A. Koos ,  Eric Webb

IPC分类号： C23F1/00

CPC分类号： C23F1/02 ,  C23C18/1608 ,  C23C18/1834 ,  C23F1/18 ,  C23F1/34 ,  H01L21/288 ,  H01L21/32134 ,  H01L21/76849 ,  H01L21/76856 ,  H01L21/76858 ,  H01L21/76883 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： An etching process for selectively etching exposed metal surfaces of a substrate and forming a conductive capping layer over the metal surfaces is described. In some embodiments, the etching process involves oxidation of the exposed metal to form a metal oxide that is subsequently removed from the surface of the substrate. The exposed metal may be oxidized by using solutions containing oxidizing agents such as peroxides or by using oxidizing gases such as those containing oxygen or ozone. The metal oxide produced is then removed using suitable metal oxide etching agents such as glycine. The oxidation and etching may occur in the same solution. In other embodiments, the exposed metal is directly etched without forming a metal oxide. Suitable direct metal etching agents include any number of acidic solutions. The process allows for controlled oxidation and/or etching with reduced pitting. After the metal regions are etched and recessed in the substrate surface, a conductive capping layer is formed using electroless deposition over the recessed exposed metal regions.