利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

211 条记录 (耗时 0.025 秒)

    Resistor isolation for double mesa transistors
    71.
    发明授权
    Resistor isolation for double mesa transistors 失效
    电阻分离双重MESA晶体管

    公开(公告)号：US3755722A

    公开(公告)日：1973-08-28

    申请号：US3755722D

    申请日：1972-09-28

    申请人： GEN MOTORS CORP

    发明人： HARLAND G ,  METZGER R

    IPC分类号： H01L23/482 ,  H01L27/07 ,  H01L27/082 ,  H01L19/00

    CPC分类号： H01L27/0772 ,  H01L23/4824 ,  H01L27/0825 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A high voltage and high current mesa type integrated circuit of cascaded common collector mesa emitter transistors and bleeder resistors that resists secondary breakdown. Discrete input and output emitter mesas and base enhancement regions are provided with the output emitter mesa surrounded by an output base enhancement region. Both mesas are separately shorted to the output base enhancement region.

    摘要翻译： 级联公共集电极台面发射极晶体管和泄放电阻器的高压和高电流台面型集成电路，可抵抗二次击穿。 离散输入和输出发射台台面和基极增强区域设置有由输出基极增强区域包围的输出发射极台面。 两个台面分别短路到输出基极增强区域。

    Power semiconductor device with negative thermal feedback
    72.
    发明授权
    Power semiconductor device with negative thermal feedback 失效
    具有负热反馈功能的半导体器件

    公开(公告)号：US3667064A

    公开(公告)日：1972-05-30

    申请号：US3667064D

    申请日：1969-05-19

    申请人： MASSACHUSETTS INST TECHNOLOGY

    发明人： THORNTON RICHARD D ,  BORKY JOHN M

    IPC分类号： G05F1/567 ,  H01L21/331 ,  H01L21/8222 ,  H01L27/02 ,  H01L27/06 ,  H01L27/082 ,  H01L29/73 ,  H03F1/30 ,  H03F1/52 ,  H03F3/68 ,  H03K17/14 ,  H03F3/14

    CPC分类号： G05F1/567 ,  H01L27/0211 ,  H01L27/0825 ,  H03F1/302 ,  H03F1/52 ,  H03K17/14

    摘要： A composite power semiconductor is disclosed which is adapted to avoid second breakdown and therefore provide stable operation. The composite semiconductor consists of an array of parallelconnected integrated circuits constructed in a single chip, each circuit comprising an output power device, for connection between an electric power source and a load, and one or more associated low-level control amplifiers. The effect of the thermal instability called second breakdown in such an array is to channel a disproportionate amount of electric current through the output device undergoing second breakdown, thereby increasing the temperature of the affected output device, thereby increasing the current, etc. until failure occurs. In the power semiconductor disclosed, the output power device and associated low-level amplifier are thermally closely coupled so that each is at all times substantially at the temperature of the other or bears a predetermined temperature relationship therewith, and the two are interconnected in a fashion that will produce high electrical gain. There is negative thermal feedback so that a change in power dissipation with resulting temperature change in the output device causes the low-level amplifier to alter the electric current carried by the output device. For example, an increase in temperature which will tend to cause the output device to conduct a larger amount of electric current and which will also tend to cause the low-level amplifier to conduct a larger amount of current, can have the result, because of the close thermal coupling and interconnection, of maintaining the output current substantially constant.

    摘要翻译： 公开了一种复合功率半导体，其适于避免第二次故障并因此提供稳定的操作。 复合半导体由在单个芯片中构造的并联连接的集成电路阵列组成，每个电路包括用于电源和负载之间的连接的输出功率器件以及一个或多个相关联的低电平控制放大器。 在这种阵列中称为二次击穿的热不稳定性的影响是将不相称的电流通过经过第二次击穿的输出装置，从而增加受影响的输出装置的温度，从而增加电流等直到发生故障 。 在所公开的功率半导体中，输出功率器件和相关联的低电平放大器热密接地耦合，使得它们总是基本上处于另一个的温度或与其保持预定的温度关系，并且两者以一种方式相互连接 这将产生高电量增益。 存在负热反馈，使得输出装置中随温度变化导致的功率消耗变化导致低电平放大器改变输出装置承载的电流。 例如，由于温度的上升会导致输出装置导通较大的电流，而且也会导致低电平放大器导通较大电流的温度，所以可能会导致由于 保持输出电流基本恒定的紧密的热耦合和互连。