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71.发明公开公开(公告)号：US20240002999A1
公开(公告)日：2024-01-04
申请号：US18368285
申请日：2023-09-14
发明人： Patrick TAE , Yaoling PAN , Leonard M. TEDESCHI
CPC分类号： C23C14/52 , G01N27/22 , C23C16/52 , H01J37/32935 , C23C14/545
摘要： Methods and apparatus for a processing chamber are provided herein. The apparatus includes, for example, an inner volume defined in the processing chamber; a first sensor assembly coupled to a surface located in the inner volume of the processing chamber and including a first electrode configuration configured to measure an electrical characteristic associated with a film deposited within the inner volume of the processing chamber; and a second sensor assembly coupled to the surface located in the inner volume of the processing chamber in relative proximity to the first sensor assembly and including a second electrode configuration, different from the first electrode configuration, configured to measure the same electrical characteristic as the first electrode configuration.
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公开(公告)号：US11859285B2
公开(公告)日：2024-01-02
申请号：US17472920
申请日：2021-09-13
发明人： Hiroki Iriuda , Kuniyasu Sakashita
IPC分类号： C23C16/455 , H01L21/02 , C23C16/52
CPC分类号： C23C16/45578 , C23C16/45546 , C23C16/52 , H01L21/0228
摘要： A processing apparatus includes: a processing container having a substantially cylindrical shape; a gas nozzle extending in a longitudinal direction of the processing container along an inside of a side wall of the processing container; an exhaust body formed on the side wall on an opposite side of the processing container to face the processing gas nozzle; and an adjustment gas nozzle configured to eject a concentration adjustment gas toward a center of the processing container. The adjustment gas nozzle is provided within an angle range in which the exhaust body is formed at a central angle with reference to the center of the processing container in a plan view from the longitudinal direction.
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公开(公告)号：US20230416923A1
公开(公告)日：2023-12-28
申请号：US18081325
申请日：2022-12-14
申请人： WONIK IPS CO., LTD.
发明人： Kee Jun KIM , Seung Ho LEE
IPC分类号： C23C16/54 , C23C16/458 , C23C16/44 , C23C16/52
CPC分类号： C23C16/54 , C23C16/458 , C23C16/4412 , C23C16/52
摘要： The present invention disclosed herein relates to a substrate processing apparatus and a substrate processing system having the same, and more particularly, to a substrate processing apparatus capable of simultaneously processing a large amount of substrates and a substrate processing system having the same. The present invention discloses a substrate processing apparatus including a first processing module in which substrate processing is performed on a plurality of substrates, a second processing module disposed adjacent to the first processing module to perform the substrate processing on the plurality of substrates, a first utility part disposed adjacent to a rear surface of the first processing module, a second utility part disposed adjacent to a rear surface of the second processing module, and an upper support part provided between the first utility part and the second utility part to divide the maintenance space into an upper area and a lower area.
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公开(公告)号：US20230416919A1
公开(公告)日：2023-12-28
申请号：US18210318
申请日：2023-06-15
发明人： Tatsuya WATANABE , Yuichi TAKENAGA
摘要： A substrate processing apparatus includes: a processing container, a temperature adjustment unit, and a controller. The controller includes a calculation unit that calculates a correction temperature for uniformizing a film thickness within a plane of each substrate, a first temperature change amount calculation unit that calculates a first temperature change amount based on the correction temperature and a thermal model, a second temperature change amount calculation unit that calculates a second temperature change amount based on a simulation of a temperature sequence using the calculated correction temperature, a temperature comparison unit that calculates a temperature difference between the first and second temperature change amounts, a film thickness information calculation unit that calculates information on a film thickness, and a temperature regulation information calculation unit that calculates temperature regulation information to uniformize a film thickness for each of a plurality of zones based on the information on the film thickness.
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75.发明公开公开(公告)号：US20230416916A1
公开(公告)日：2023-12-28
申请号：US18336524
申请日：2023-06-16
发明人： Hidehiro YANAI
IPC分类号： C23C16/455 , C23C16/52 , C23C16/34
CPC分类号： C23C16/45561 , H01L21/02186 , C23C16/34 , C23C16/52
摘要： A technique includes a process container configured to process a substrate, a storage container which is at least partially in contact with an outer wall of the process container and is configured to store a gas to be supplied into the process container, and a temperature regulator configured to regulate an internal temperature of the storage container.
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公开(公告)号：US11854771B2
公开(公告)日：2023-12-26
申请号：US17328509
申请日：2021-05-24
发明人： Chien-Teh Kao , Tae Kyung Won , Carl A. Sorensen , Sanjay D. Yadav , Young Dong Lee , Shinichi Kurita , Soo Young Choi
IPC分类号： H01J37/32 , H01L21/683 , C23C16/455 , C23C16/52 , H01L21/02
CPC分类号： H01J37/32449 , C23C16/45565 , C23C16/52 , H01J37/321 , H01J37/32174 , H01J37/32458 , H01J37/32715 , H01L21/02274 , H01L21/6833 , H01J2237/3321
摘要： Embodiments of the present disclosure include methods and apparatus for depositing a plurality of layers on a large area substrate. In one embodiment, a processing chamber for plasma deposition is provided. The processing chamber includes a showerhead and a substrate support assembly. The showerhead is coupled to an RF power source and a ground and includes a plurality of perforated gas diffusion members. A plurality of plasma applicators is disposed within the showerhead, wherein one plasma applicator of the plurality of plasma applicators corresponds to one of the plurality of perforated gas diffusion members. Further, a DC bias power source is coupled to a substrate support assembly.
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公开(公告)号：US11851760B2
公开(公告)日：2023-12-26
申请号：US17644760
申请日：2021-12-16
发明人： Fayaz Shaikh , Nick Linebarger , Curtis Bailey
IPC分类号： H01L21/687 , C23C16/455 , H01L21/02 , C23C16/505 , C23C16/52 , H01L21/67 , C23C16/04
CPC分类号： C23C16/45574 , C23C16/04 , C23C16/45519 , C23C16/45565 , C23C16/45597 , C23C16/505 , C23C16/52 , H01L21/0217 , H01L21/0262 , H01L21/02164 , H01L21/02211 , H01L21/02216 , H01L21/02274 , H01L21/67017 , H01L21/68735 , H01L21/68771 , H01L21/68785 , H01L21/02532 , H01L21/02595 , H01L21/67161
摘要： A plasma processing system is provided. The system includes a chamber, a controller and a showerhead disposed in the chamber. A first gas manifold is connected to the showerhead for providing a first gas from a first gas source responsive to control from the controller. A shower-pedestal is disposed in the chamber and oriented opposite the showerhead. A second gas manifold is connected to the shower-pedestal for providing a second gas from a second gas source responsive to control from the controller. A substrate support for holding a substrate at a spaced apart relationship from the shower-pedestal is provided. A radio frequency (RF) power supply for providing power to the showerhead to generate a plasma is provided. The plasma is used for depositing a film on a back-side of the substrate, when present in the chamber. The substrate is held by the substrate support in the spaced apart relationship from the shower-pedestal, during backside deposition. The showerhead provides a purge gas during the backside deposition.
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78.发明公开公开(公告)号：US20230411148A1
公开(公告)日：2023-12-21
申请号：US18455302
申请日：2023-08-24
CPC分类号： H01L21/0228 , H01L21/02274 , H01J37/32449 , H01L21/02219 , H01J2237/3321 , C23C16/56 , C23C16/52 , C23C16/36 , C23C16/325
摘要： There is provided a technique that includes (a) forming an oligomer-containing layer on a surface of a substrate and in a concave portion of the substrate by allowing an oligomer to be generated, grow, and flow on the surface of the substrate and in the concave portion of the substrate by performing a cycle a predetermined number of times at a first temperature, the cycle including: supplying a precursor gas to the substrate; supplying a first nitrogen- and hydrogen-containing gas to the substrate; supplying a second nitrogen- and hydrogen-containing gas to the substrate; and supplying a first modifying gas to the substrate; and (b) forming a film by performing a thermal treatment to the substrate at a second temperature equal to or higher than the first temperature to modify the oligomer-containing layer so as to be filled in the concave portion.
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公开(公告)号：US11846019B2
公开(公告)日：2023-12-19
申请号：US17491778
申请日：2021-10-01
发明人： Jong Yun Kim , William Nehrer , Jungwon Park
CPC分类号： C23C16/4405 , C23C16/52
摘要： Embodiments of the present disclosure relate to a shadow frame support with one or more flow controllers and a method of controlling the flow of gases through the shadow frame support. The shadow frame support includes a body coupled to walls of a chamber such that a top surface of the shadow frame support is horizontally disposed in the chamber. The body has a plurality of channels disposed therethrough. Each channel includes a flow controller. The flow controller may be adjusted in real-time to change the open ratio of the flow controller.
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80.发明公开公开(公告)号：US20230399744A1
公开(公告)日：2023-12-14
申请号：US18126948
申请日：2023-03-27
IPC分类号： C23C16/455 , C23C16/40 , C23C16/44 , C23C16/52
CPC分类号： C23C16/45542 , C23C16/402 , C23C16/4412 , C23C16/45502 , C23C16/4404 , C23C16/45548 , C23C16/45565 , C23C16/52
摘要： A device, including a hydrophilic layer on a portion of an inner surface of a transparent polymer forming a body; wherein the hydrophilic layer includes a sulfonated inner surface of the transparent polymer, a silica, a silicon oxycarbide, an O2 plasma treatment of the transparent polymer, or a combination thereof. The device can be a nebulizer or a spray chamber, for example used in an inductively coupled plasma device. A method of making the device is also disclosed.
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