摘要:
A method for measuring leakage through a dielectric layer of a semiconductor device on a wafer, including irradiating the dielectric layer with a charged particle beam having a beam current. The irradiation generates a wafer current having a relation to the beam current in a selected range of the beam current. The method further includes determining a boundary value of the beam current at which the relation is not satisfied, and determining a leakage current through the dielectric layer in response to the boundary value.
摘要:
An object of the invention is to realize a method and an apparatus for processing and observing a minute sample which can observe a section of a wafer in horizontal to vertical directions with high resolution, high accuracy and high throughput without splitting any wafer which is a sample. In an apparatus of the invention, there are included a focused ion beam optical system and an electron optical system in one vacuum container, and a minute sample containing a desired area of the sample is separated by forming processing with a charged particle beam, and there are included a manipulator for extracting the separated minute sample, and a manipulator controller for driving the manipulator independently of a wafer sample stage.
摘要:
In a scanning atom probe (100), a surface topography of a specimen (3) is firstly analyzed by a surface topography analyzing unit (20). In the next place, an extraction electrode (5) is aligned to a desired area to be analyzed of a specimen surface. In case of analyzing electronic state of the area to be analyzed, negative bias voltage is impressed onto the specimen (3) from a direct current high voltage supply (2) and field emitted electrons are detected by a screen (9). In case of analyzing atomic arrangement and composition of the area to be analyzed, positive voltage is impressed onto the specimen (3) from the direct current high voltage supply (2) and a pulse generator (1) and positive ions generated by field evaporation are detected by a position sensitive ion detector (11) or a relfectron type mass analyzer (13).
摘要:
There is disclosed an electron probe microanalyzer capable of achieving focusing after movement of a specimen in a shorter time than conventional, thus improving the total measuring efficiency. When movement into a specified analysis point on the specimen is completed, an automatic focusing device automatically performs a focusing operation consisting of scanning a relatively narrow range. If this operation is performed unsuccessfully, the automatic focusing device automatically performs a second focusing operation consisting of scanning a wider range. Thus, the instrument searches for a focal point.
摘要:
A time-of-flight secondary ion mass spectrometer instrument comprises a pulsed source of a beam of ions, directed through a focusing device onto a sample to be analyzed. Ions emitted from the sample are collected, and mass spectrometry performed thereon to analyze the sample. Both the source and emitted beams may be focused by the same focusing device. This allows the instrument to be mounted to a single port in a vacuum chamber.
摘要:
A tapered, nonconductive structure (10) having a hollow core (18) and a conical tip (14) includes a metal wire (16) within the core (18). The wire (16) is sealed within, and is exposed at the end (22) of, the tip (14). An electrically conductive or semiconductive layer (24) on the exterior of the tip (14) form a point thermocouple contact with the wire. The tip (14) may be fabricated, for example, by placing a metal wire (16) within a tube (12), and heating and pulling the tube (12) to produce two tapered micropipettes. Thereafter, a thin metal or semiconductor film (24) is evaporated onto the outer surface.
摘要:
The electrostrictive actuator device of the present invention, which controls relative movement in a scanned-probe microscope between the tip of a probe and the surface of a sample, comprises two thin-walled cylindrical members formed of electrostrictive material. The first cylindrical member, which is connected to the microscope, has on each of its inner and outer surfaces a conductive layer that forms at least one electrode. Applying voltages to the electrodes on the inner and outer surfaces of the first cylindrical member controls the two-dimensional X-Y horizontal relative movement between the probe tip and the sample surface. The second cylindrical member of the actuator device is coaxially connected at one end with the first cylindrical member and at its opposite end with the sample or the probe. Both the inner and outer surfaces of the second member have conductive layers, each of which forms an electrode. Applying voltages to the electrodes on the inner and outer surfaces of the second cylindrical member controls the Z-direction vertical relative movement of the probe tip on or near the sample surface. In preferred embodiments of the actuator device of the invention, either or both of the conductive layers on the inner and outer surfaces of the first cylindrical member may comprise two opposite pairs of spaced apart electrodes. Also in accordance with the invention, a scanned-probe microscope apparatus comprises a microscope and the just-described electrostrictive actuator device comprising first and second cylindrical members for controlling, respectively, X-Y horizontal and Z-direction vertical movements.
摘要:
Electron microscope provided, in the direction of the longitudinal axis, with at least one electron beam generation system, a condenser and objective lens system, a specimen chamber with a specimen mount, a projection lens system with imaging screen for the purpose of transmission electron microscopy (TEM) and/or an electron detector for the purpose of scanning electron microscopy (SEM) . The microscope is used in combination with an externally positioned Raman spectrometer and an associated light source for injecting and extracting, via a window in the microscope wall, a light beam to be directed at the specimen, and specimen-related Raman radiation, respectively. In the specimen chamber, a light beam and Raman radiation guide system is provided with an optical guide to guide the light beam to--and the Raman radiation from--the specimen. The guide system and the specimen mount are displaceable with respect to one another for mutual alignment of the specimen and the optical axis of the Raman spectrometer.
摘要:
A method of verifying that a given insulative element conforms with a reference insulative element, comprising the steps of: emitting a primary beam of electrons impinging on the given insulative element, receiving a secondary beam of electrons returned by the given insulative element in response to emission of the primary beam of electrons, and comparing a curve as a function of time of the electrical current of the secondary beam received with a curve as a function of time of a reference electrical current to establish whether or not the given insulative element conforms to a reference insulative element.
摘要:
A device for analyzing foreign matter on semiconductor wafers is provided, which is capable of analyzing a great deal of foreign matter rapidly without requiring the higher level decision capabilities of a skilled analyst. The device for analyzing foreign matter on semiconductor wafers includes a scanning electron microscope (SEM) which obtains the composition ratios of each element of a plurality of foreign matter adhered to semiconductor wafers. A foreign matter plotting section is provided to obtain the distribution of the composition ratios of the plurality of foreign matter on the basis of a result obtained by the SEM. A foreign matter classifying process section classifies the plurality of foreign matter on the basis of the distribution. A foreign matter identifying process section compares the foreign matter classification result with data stored in advance in a foreign matter data base, thereby identifying the foreign matter type.