Abstract:
A non-volatile memory device having a memory array organized into a plurality of memory blocks, having either planar memory cells or stacks of cells. Row decoding circuitry of the memory device is configured to select a group of the plurality of memory blocks in response to a first row address, and to select a memory block of the group for receiving row signals in response to a second row address. Row decoding circuitry associated with each group of memory blocks can have a row pitch spacing that is greater than a row pitch spacing of a single memory block and less than or equal to a total row pitch spacing corresponding to the group of memory blocks.
Abstract:
A switch includes a reserved pool of buffers in a shared memory. The reserved pool of buffers is reserved for exclusive use by an egress port. The switch includes pool select logic which selects a free buffer from the reserved pool for storing data received from an ingress port to be forwarded to the egress port. The shared memory also includes a shared pool of buffers. The shared pool of buffers is shared by a plurality of egress ports. The pool select logic selects a free buffer in the shared pool upon detecting no free buffer in the reserved pool. The shared memory may also include a multicast pool of buffers. The multicast pool of buffers is shared by a plurality of egress ports. The pool select logic selects a free buffer in the multicast pool upon detecting an IP Multicast data packet received from an ingress port.
Abstract:
A clock applying circuit for a synchronous memory is comprised of a clock input for receiving a clock input signal, apparatus connected to the synchronous memory for receiving a driving clock signal, and a tapped delay line for receiving the clock input signal for delivering the clock driving signal to the synchronous memory in synchronism with but delayed from the clock input signal, the delay being a small fraction of the clock period of the clock input signal.
Abstract:
A memory device includes core memory such as flash memory for storing data. The memory device includes a first power input to receive a first voltage used to power the flash memory. Additionally, the memory device includes a second power input to receive a second voltage. The memory device includes power management circuitry configured to receive the second voltage and derive one or more internal voltages. The power management circuitry supplies or conveys the internal voltages to the flash memory. The different internal voltages generated by the power management circuitry (e.g., voltage converter circuit) and supplied to the core memory enable operations such as read/program/erase with respect to cells in the core memory.
Abstract:
A dynamic random access memory (DRAM) is selectively operable in a sleep mode and another mode. The DRAM has data storage cells that are refreshed in the refresh mode. A boosted voltage is provided for the operation of the DRAM. A boosted voltage provider includes a group of charge pump circuits that are selectively activated by a pump control circuit based on a refresh time for refreshing data in the DRAM cells in the sleep mode.
Abstract:
A method for improving sub-word line response comprises generating a variable substrate bias determined by at least one user parameter. The variable substrate bias is applied to a sub-word line driver in a selected sub-block of a memory. A voltage disturbance on a sub-word line in communication with the sub-word line driver is minimized by modifying a variable substrate bias of the sub-word line driver to change a transconductance of the sub-word line driver thereby.
Abstract:
A memory module that includes a buffer and a plurality of synchronous memory devices. The memory module also includes bidirectional bus lines, and each of the synchronous memory devices has bidirectional data terminals. The buffer is configured to regenerate signals received on the bus lines for receipt by the synchronous memory devices, and to regenerate signals received from any one of the synchronous memory devices for receipt by the bus lines. The memory module may further include command lines and a clock line for providing commands and a clock signal to the synchronous memory devices via a command buffer. The combined data bus width of the memory module may be greater than the data bus width of any single one of synchronous memory device, and the total address space provided by the memory module may be larger than the data space for any single synchronous memory device.
Abstract:
A semiconductor device has a plurality of stacked semiconductor dice mounted on a substrate. Each die has similar dimensions. Each die has a first plurality of bonding pads arranged along a bonding edge of the die. A first group of the dice are mounted to the substrate with the bonding edge oriented in a first direction. A second group of the dice are mounted to the substrate with the bonding edge oriented in a second direction opposite the first direction. Each die is laterally offset in the second direction relative to the remaining dice by a respective lateral offset distance such that the bonding pads of each die are not disposed between the substrate and any portion of the remaining dice in a direction perpendicular to the substrate. A plurality of bonding wires connects the bonding pads to the substrate. A method of manufacturing a semiconductor device is also disclosed.
Abstract:
A solid state drive is disclosed. The solid state drive includes a circuit board having opposing first and second surfaces. A plurality of semiconductor chips are attached to the first surface of the circuit board of the solid state drive, and the plurality of semiconductor chips of the solid state drive include at least one memory chip that is at least substantially encapsulated in a resin. An in-line memory module-type form factor circuit board is also disclosed. The in-line memory module-type form factor circuit board has opposing first and second surfaces. A plurality of semiconductor chips are attached to the first surface of the in-line memory module-type form factor circuit board, and these semiconductor chips include at least one memory chip that is at least substantially encapsulated in a resin.
Abstract:
A personal alarm system includes a monitoring base station and one or more remote sensing units in two-way radio communication. An electronic handshake between the base station and each remote unit is used to assure system reliability. The remote units transmit at selectable power levels. In the absence of an emergency, a remote unit transmits at a power-conserving low power level. Received field strength is measured to determine whether a remote unit has moved beyond a predetermined distance from the base station. If the distance is exceeded, the remote unit transmits at a higher power level. The remote unit includes sensors for common hazards including water emersion, smoke, excessive heat, excessive carbon monoxide concentration, and electrical shock. The base station periodically polls the remote units and displays the status of the environmental sensors. The system is useful in child monitoring, for use with invalids and with employees involved in activities which expose them to environmental risk. Alternative embodiments include a panic button on the remote unit for summoning help, and an audible beacon on the remote unit which can be activated from the base station and useful for locating strayed children. In another embodiment, the remote unit includes a Global Positioning System receiver providing location information for display by the base station.