公开(公告)号：US5173393A

公开(公告)日：1992-12-22

申请号：US513570

申请日：1990-04-24

申请人： Recai Sezi ,  Michael Sebald ,  Rainer Leuschner ,  Siegfried Birkle ,  Hellmut Ahne

发明人： Recai Sezi ,  Michael Sebald ,  Rainer Leuschner ,  Siegfried Birkle ,  Hellmut Ahne

IPC分类号： G03F7/038 ,  G03F7/26 ,  G03F7/40 ,  H01L21/027

CPC分类号： G03F7/40

摘要： A photoresist system that is easily structurable and, in particular, is suitable for the deep ultraviolet range is provided. An increased etching resistance to a halogen-containing plasma is produced in a lithographically generated photoresist structure by treatment with a reactant. The reactant comprises predominantly aromatic structures and includes reactive groups that are suitable for chemical reaction with further reactable groups of the photoresist. In an embodiment, the photoresist includes anhydride or epoxy groups that are suitable for structuring with deep ultraviolet light.

摘要翻译： 提供易于结构化并且特别适用于深紫外范围的光致抗蚀剂体系。 通过用反应物处理在光刻产生的光致抗蚀剂结构中产生对含卤素等离子体的耐腐蚀性提高。 反应物主要包含芳族结构，并且包括适于与光致抗蚀剂的其它可反应基团进行化学反应的反应性基团。 在一个实施方案中，光致抗蚀剂包括适于用深紫外光结构化的酸酐或环氧基团。

公开(公告)号：US08741690B2

公开(公告)日：2014-06-03

申请号：US13453787

申请日：2012-04-23

申请人： Thorsten Meyer ,  Rainer Leuschner ,  Gerald Ofner ,  Reinhard Hess ,  Recai Sezi

发明人： Thorsten Meyer ,  Rainer Leuschner ,  Gerald Ofner ,  Reinhard Hess ,  Recai Sezi

IPC分类号： H01L21/00

CPC分类号： H01L21/568 ,  H01L23/49811 ,  H01L23/5389 ,  H01L24/19 ,  H01L24/20 ,  H01L24/24 ,  H01L24/96 ,  H01L24/97 ,  H01L25/105 ,  H01L25/16 ,  H01L2224/12105 ,  H01L2224/211 ,  H01L2224/221 ,  H01L2224/32225 ,  H01L2224/73267 ,  H01L2224/97 ,  H01L2225/1035 ,  H01L2225/1052 ,  H01L2225/107 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01068 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10329 ,  H01L2924/12044 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13062 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/3511 ,  H01L2224/19 ,  H01L2924/00 ,  H01L2224/83 ,  H01L2224/82

摘要： A method of manufacturing a semiconductor package includes embedding a semiconductor chip in an encapsulant. First contact pads are formed on a first main face of the semiconductor package and second contact pads are formed on a second main face of the semiconductor package opposite the first main face. A diameter d in micrometers of an exposed contact pad area of the second contact pads satisfies d≧(8/25)x+142 μm, where x is a pitch of the second contact pads in micrometers.

摘要翻译： 制造半导体封装的方法包括将半导体芯片嵌入密封剂中。 第一接触焊盘形成在半导体封装的第一主面上，并且第二接触焊盘形成在与第一主面相对的半导体封装的第二主面上。 第二接触焊盘的暴露的接触焊盘区域的直径d（以微米为单位）满足d≥（8/25）×+142μm，其中x是以微米为单位的第二接触焊盘的间距。

公开(公告)号：US20110024918A1

公开(公告)日：2011-02-03

申请号：US12904561

申请日：2010-10-14

申请人： Markus Brunnbauer ,  Recai Sezi ,  Thorsten Meyer ,  Gottfried Beer

发明人： Markus Brunnbauer ,  Recai Sezi ,  Thorsten Meyer ,  Gottfried Beer

IPC分类号： H01L23/48

CPC分类号： H01L24/96 ,  H01L21/568 ,  H01L24/97 ,  H01L25/0652 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/02371 ,  H01L2224/02372 ,  H01L2224/0401 ,  H01L2224/12105 ,  H01L2224/13022 ,  H01L2224/13024 ,  H01L2224/16145 ,  H01L2224/94 ,  H01L2224/96 ,  H01L2224/97 ,  H01L2225/06513 ,  H01L2225/06527 ,  H01L2225/06541 ,  H01L2225/06551 ,  H01L2225/06582 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01072 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/00 ,  H01L2224/81

摘要： Stacked semiconductor chips are disclosed. One embodiment provides a method including a first substrate having a first surface and an opposing second surface. The first substrate includes an array of first connection elements on the first surface of the first substrate. A second substrate has a first surface and an opposing second surface. The second substrate includes an array of second connection elements on the first surface of the second substrate. The first connection elements is attached to the second connection elements; and is thinning at least one of the first substrate and the second substrate after the attachment of the first connection elements to the second connection elements.

摘要翻译： 公开了堆叠的半导体芯片。 一个实施例提供了包括具有第一表面和相对的第二表面的第一基底的方法。 第一衬底包括在第一衬底的第一表面上的第一连接元件的阵列。 第二基板具有第一表面和相对的第二表面。 第二衬底包括在第二衬底的第一表面上的第二连接元件的阵列。 第一连接元件附接到第二连接元件; 并且在将第一连接元件附接到第二连接元件之后使第一基板和第二基板中的至少一个变薄。

公开(公告)号：US07867878B2

公开(公告)日：2011-01-11

申请号：US11859329

申请日：2007-09-21

申请人： Markus Brunnbauer ,  Recai Sezi ,  Thorsten Meyer ,  Gottfried Beer

发明人： Markus Brunnbauer ,  Recai Sezi ,  Thorsten Meyer ,  Gottfried Beer

IPC分类号： H01L21/30

CPC分类号： H01L24/96 ,  H01L21/568 ,  H01L24/97 ,  H01L25/0652 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/02371 ,  H01L2224/02372 ,  H01L2224/0401 ,  H01L2224/12105 ,  H01L2224/13022 ,  H01L2224/13024 ,  H01L2224/16145 ,  H01L2224/94 ,  H01L2224/96 ,  H01L2224/97 ,  H01L2225/06513 ,  H01L2225/06527 ,  H01L2225/06541 ,  H01L2225/06551 ,  H01L2225/06582 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01072 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/00 ,  H01L2224/81

摘要： Stacked semiconductor chips are disclosed. One embodiment provides a method including a first substrate having a first surface and an opposing second surface. The first substrate includes an array of first connection elements on the first surface of the first substrate. A second substrate has a first surface and an opposing second surface. The second substrate includes an array of second connection elements on the first surface of the second substrate. The first connection elements is attached to the second connection elements; and is thinning at least one of the first substrate and the second substrate after the attachment of the first connection elements to the second connection elements.

公开(公告)号：US20090014871A1

公开(公告)日：2009-01-15

申请号：US11777694

申请日：2007-07-13

申请人： Thorsten Meyer ,  Markus Brunnbauer ,  Recai Sezi

发明人： Thorsten Meyer ,  Markus Brunnbauer ,  Recai Sezi

IPC分类号： H01L23/488 ,  H01L21/44

CPC分类号： H01L24/12 ,  B81B2207/07 ,  B81B2207/097 ,  B81C1/00301 ,  H01L21/568 ,  H01L23/3114 ,  H01L24/11 ,  H01L2224/02311 ,  H01L2224/0401 ,  H01L2224/05147 ,  H01L2224/05164 ,  H01L2224/05166 ,  H01L2224/05647 ,  H01L2224/1132 ,  H01L2224/1147 ,  H01L2224/13099 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/01074 ,  H01L2924/013

摘要： A semiconductor device is disclosed. One embodiment includes a semiconductor substrate and at least two insulating elements located above the semiconductor substrate or above a mold compound embedding the semiconductor substrate. The at least two insulating elements have a first face facing the semiconductor substrate or the mold compound and a second face facing away from the semiconductor substrate or the mold compound. A conductive element for each of the at least two insulating elements extends from the first face of the insulating element to the second face of the insulating element.

摘要翻译： 公开了一种半导体器件。 一个实施例包括半导体衬底和位于半导体衬底之上或在嵌入半导体衬底的模具化合物上方的至少两个绝缘元件。 所述至少两个绝缘元件具有面对半导体衬底或模具化合物的第一面和背离半导体衬底或模具化合物的第二面。 用于至少两个绝缘元件中的每一个的导电元件从绝缘元件的第一面延伸到绝缘元件的第二面。

公开(公告)号：US07273821B2

公开(公告)日：2007-09-25

申请号：US10098845

申请日：2002-03-14

申请人： Recai Sezi

发明人： Recai Sezi

IPC分类号： H01L21/469 ,  H01L21/31

CPC分类号： C08L71/02 ,  B05D3/107 ,  B05D5/00 ,  C08J9/26 ,  C08J2201/042 ,  C08K3/36 ,  C08L71/00 ,  C09D7/61 ,  H01L21/02118 ,  H01L21/02203 ,  H01L21/31695 ,  H05K3/381

摘要： The present invention relates to a process for producing a porous layer adhering to a substrate, which comprises the steps: a. preparation of a composition comprising an organic polymer constituent and an inorganic-organic constituent and/or an inorganic constituent, b. application of this composition to a substrate and formation of a layer on the substrate, and c. removal of the inorganic-organic constituent and/or the inorganic constituent from the layer to form a porous layer adhering to the substrate.

摘要翻译： 本发明涉及一种生产附着在基底上的多孔层的方法，该方法包括以下步骤：a。 制备包含有机聚合物成分和无机 - 有机成分和/或无机成分的组合物，b。 将该组合物施用于基材和在基材上形成层，以及c。 从层中除去无机 - 有机组分和/或无机组分以形成粘附到衬底的多孔层。

公开(公告)号：US20060014374A1

公开(公告)日：2006-01-19

申请号：US10518880

申请日：2003-06-03

申请人： Hans-Joachim Barth ,  Recai Sezi

发明人： Hans-Joachim Barth ,  Recai Sezi

IPC分类号： H01L21/4763

CPC分类号： H01L21/768 ,  H01L21/7682 ,  H01L23/5222 ,  H01L2924/0002 ,  H01L2924/00

摘要： The invention relates to a layer arrangement and to a process for producing a layer arrangement. The layer arrangement has a layer which is arranged on a substrate and includes a first subregion comprising decomposable material and a second subregion which is arranged next to the first subregion and has a useful structure comprising a non-decomposable material. Furthermore, the layer arrangement has a covering layer on the layer comprising decomposable material and the useful structure, the layer arrangement being designed in such a manner that the decomposable material can be removed from the layer arrangement.

摘要翻译： 本发明涉及层布置和用于生产层布置的方法。 层布置具有布置在基板上的层，并且包括第一子区域，其包括可分解材料，第二子区域布置在第一子区域旁边，并且具有包含不可分解材料的有用结构。 此外，层布置在包括可分解材料和有用结构的层上具有覆盖层，层布置被设计成使得可分解材料可以从层布置中移除。

公开(公告)号：US06866980B2

公开(公告)日：2005-03-15

申请号：US10244839

申请日：2002-09-16

申请人： Recai Sezi

发明人： Recai Sezi

IPC分类号： C07C219/34 ,  G03F7/039 ,  C03F7/004 ,  C07C215/76

CPC分类号： G03F7/0392 ,  C07C219/34 ,  C07C2603/18

摘要： Bis-o-aminophenols, which carry on at least one of their hydroxyl groups a tert-butoxy-carbonyl group, can be reacted with dicarboxylic acids to give the corresponding poly-o-hydroxyamides. Following cyclization to the polybenzoxazole, these polymers have a lower dielectric constant than compounds prepared from corresponding poly-o-hydroxyamides which do not carry any tert-butoxycarbonyl group.

摘要翻译： 携带其羟基中至少一个叔丁氧羰基的双邻氨基苯酚可与二羧酸反应，得到相应的聚邻羟基酰胺。 环聚到聚苯并恶唑后，这些聚合物的介电常数低于不含任何叔丁氧基羰基的相应聚邻羟基酰胺制备的化合物。

公开(公告)号：US06531632B2

公开(公告)日：2003-03-11

申请号：US09803762

申请日：2001-03-12

申请人： Jörg Haussmann ,  Gerhard Maier ,  Recai Sezi

发明人： Jörg Haussmann ,  Gerhard Maier ,  Recai Sezi

IPC分类号： C07C21143

CPC分类号： C07D471/04 ,  C07C205/38 ,  C07C217/90 ,  C07C2603/18

摘要： Bis-o-aminophenols and o-aminophenolcarboxylic acids have the following structures: A1 to A7 are, independently of each other, H, F, CH3, CF3, OCH3 or OCF3. T is an aromatic or heterocyclic residue. A method for preparing bis-o-aminophenols and o-aminophenolcarboxylic acids is also provided.

摘要翻译： 双邻氨基苯酚和邻氨基苯甲酸具有以下结构：A 1至A 7彼此独立地为H，F，CH 3，CF 3，OCH 3或OCF 3。 T是芳族或杂环残基。 还提供了制备双邻氨基苯酚和邻氨基苯甲酸的方法。

公开(公告)号：US06194482B1

公开(公告)日：2001-02-27

申请号：US09444740

申请日：1999-11-22

申请人： Barbara Lehner ,  Recai Sezi

发明人： Barbara Lehner ,  Recai Sezi

IPC分类号： C08F248

CPC分类号： H01L21/563 ,  C08G59/18 ,  C08L63/00 ,  C08L83/08 ,  G03F7/038 ,  G03F7/0755 ,  G03F7/0757 ,  H01L24/29 ,  H01L2224/16 ,  H01L2224/73203 ,  H01L2224/83859 ,  H01L2224/83862 ,  H01L2224/83874 ,  H01L2224/83885 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01055 ,  H01L2924/181 ,  Y10T428/24893 ,  Y10T428/24917 ,  C08L83/00 ,  C08L2666/14 ,  C08L2666/28 ,  C08L2666/54 ,  H01L2924/00

摘要： UV-hardenable and thermally hardenable epoxy resins for the underfilling process in electrical and electronic components are provided. A new casting resin component has an increased storage stability at room temperature of at least 6 months and improved characteristics for the underfilling process including faster hardening and lower viscosity. Filler material with a maximum grain size of 20 &mgr;m and a siloxane component are provided in addition to the casting resin formulation.

摘要翻译： 提供了用于电气和电子部件中的底部填充工艺的UV可硬化和热可硬化环氧树脂。 新型铸塑树脂组分在室温下具有增加的至少6个月的储存稳定性和改进的底部填充工艺的特性，包括更快的硬化和较低的粘度。 除了铸塑树脂配方之外，还提供了最大粒径为20μm的填料和硅氧烷组分。