公开(公告)号：US07816031B2

公开(公告)日：2010-10-19

申请号：US11837291

申请日：2007-08-10

申请人： Yi Cui ,  Candace K. Chan

发明人： Yi Cui ,  Candace K. Chan

IPC分类号： H01M4/02 ,  H01M4/60

CPC分类号： H01M10/052 ,  H01M4/0421 ,  H01M4/134 ,  H01M4/1395 ,  H01M4/661 ,  H01M4/75 ,  Y02E60/122 ,  Y02T10/7011 ,  Y10T29/49108

摘要： A variety of methods and apparatus are implemented in connection with a battery. According to one such arrangement, an apparatus is provided for use in a battery in which ions are moved. The apparatus comprises a substrate and a plurality of growth-rooted nanowires. The growth-rooted nanowires extend from the substrate to interact with the ions.

摘要翻译： 结合电池实现各种方法和装置。 根据一种这样的布置，提供了一种用于其中离子移动的电池中的装置。 该装置包括基底和多根生长根的纳米线。 生长根的纳米线从衬底延伸以与离子相互作用。

公开(公告)号：US07639805B2

公开(公告)日：2009-12-29

申请号：US11078926

申请日：2005-03-12

申请人： Jin Li ,  Yi Cui

发明人： Jin Li ,  Yi Cui

IPC分类号： H04N7/167 ,  H04L9/00

CPC分类号： H04L65/4076 ,  H04L29/06027 ,  H04L65/607 ,  H04L67/1002 ,  H04L67/101 ,  H04L67/104 ,  H04L67/1068 ,  H04L67/108 ,  H04L67/1091 ,  H04L67/1095 ,  H04L69/14

摘要： A DRM scheme that may be optionally invoked by the owner. With the DRM protection turned on, the media is encrypted before it is distributed in a P2P network, and is decrypted prior to its use (play back). The peers may still efficiently distribute and serve without authorization from the owner. Nevertheless, when the media is used (played back), the client node must seek proper authorization from the owner. The invention further provides a hierarchical DRM scheme wherein each packet of the media is associated with a different protection level. In the hierarchical DRM scheme of the invention there is usually an order of the protection level. As a result, in one embodiment of the invention, the decryption key of a lower protection layer is the hash of the decryption key at the higher protection level. That way, a user granted access to the high protection layer may simply hold a single license of that layer, and obtain decryption keys of that layer and below. The invention further provides for a process for managing digital rights to a scalable media file wherein a different encryption/decryption key is used to encrypt each truncatable media packet with a base layer without requiring additional storage space to store the key.

摘要翻译： 可以由所有者可选地调用的DRM方案。 DRM保护启用后，媒体在分发到P2P网络之前进行加密，并在使用前进行解密（播放）。 同行可能仍然有效地分配和服务，未经业主授权。 然而，当使用（播放）媒体时，客户机节点必须向所有者寻求适当的授权。 本发明还提供了分层DRM方案，其中媒体的每个分组与不同的保护级别相关联。 在本发明的分层DRM方案中，通常具有保护级别的顺序。 结果，在本发明的一个实施例中，较低保护层的解密密钥是较高保护级别的解密密钥的散列。 这样一来，授权访问高保护层的用户可以简单地保持该层的单一许可，并且获得该层及其以下的解密密钥。 本发明还提供了一种用于管理可扩展媒体文件的数字权利的过程，其中使用不同的加密/解密密钥来加密具有基本层的每个可截断媒体分组，而不需要额外的存储空间来存储密钥。

公开(公告)号：US07595260B2

公开(公告)日：2009-09-29

申请号：US11543326

申请日：2006-10-04

申请人： Charles M. Lieber ,  Yi Cui ,  Xiangfeng Duan ,  Yu Huang

发明人： Charles M. Lieber ,  Yi Cui ,  Xiangfeng Duan ,  Yu Huang

IPC分类号： H01L21/30 ,  H01L21/86

CPC分类号： H01L29/0665 ,  B01J23/50 ,  B01J23/52 ,  B01J23/72 ,  B01J35/0013 ,  B01J37/349 ,  B81C1/0019 ,  B81C1/00206 ,  B82Y10/00 ,  B82Y15/00 ,  B82Y30/00 ,  B82Y40/00 ,  C30B11/00 ,  C30B25/005 ,  C30B29/605 ,  G01N27/4146 ,  G01N33/54373 ,  G11C13/0014 ,  G11C13/0019 ,  G11C13/025 ,  G11C13/04 ,  G11C2213/77 ,  G11C2213/81 ,  H01L21/02521 ,  H01L21/02532 ,  H01L21/0254 ,  H01L21/02543 ,  H01L21/02557 ,  H01L21/0256 ,  H01L21/02573 ,  H01L21/02581 ,  H01L21/02603 ,  H01L21/02606 ,  H01L21/0262 ,  H01L21/02628 ,  H01L21/02631 ,  H01L21/02636 ,  H01L21/02639 ,  H01L21/02645 ,  H01L21/02653 ,  H01L23/53276 ,  H01L29/045 ,  H01L29/0673 ,  H01L29/068 ,  H01L29/16 ,  H01L29/1602 ,  H01L29/18 ,  H01L29/20 ,  H01L29/207 ,  H01L29/22 ,  H01L29/24 ,  H01L29/26 ,  H01L29/267 ,  H01L33/06 ,  H01L33/18 ,  H01L33/20 ,  H01L51/002 ,  H01L51/0048 ,  H01L2924/0002 ,  Y02E10/549 ,  Y02P70/521 ,  Y10S438/962 ,  Y10S977/762 ,  Y10S977/847 ,  Y10S977/858 ,  Y10S977/882 ,  Y10S977/883 ,  Y10S977/892 ,  Y10S977/936 ,  Y10T428/24 ,  H01L2924/00

摘要： A bulk-doped semiconductor may be at least one of the following: a single crystal, an elongated and bulk-doped semiconductor that at any point along its longitudinal axis, has a largest cross-sectional dimension less than 500 nanometers, and a free-standing and bulk-doped semiconductor with at least one portion having a smallest width of less than 500 nanometers. At least one portion of such a semiconductor may have a smallest width of less than 200 nanometers, or less than 150 nanometers, or less than 100 nanometers, or less than 80 nanometers, or less than 70 nanometers, or less than 60 nanometers, or less than 40 nanometers, or less than 20 nanometers, or less than 10 nanometers, or even less than 5 nanometers. Such a semiconductor may be doped during growth. Such a semiconductor may be part of a device, which may include any of a variety of devices and combinations thereof.

摘要翻译： 体掺杂半导体可以是以下至少一种：单晶，细长和体掺杂半导体，其沿​​着其纵向轴线的任何点处具有小于500纳米的最大横截面尺寸， 具有至少一部分具有小于500纳米的最小宽度的立体和体掺杂半导体。 这种半导体的至少一部分可以具有小于200纳米，或小于150纳米，或小于100纳米，或小于80纳米，或小于70纳米，或小于60纳米的最小宽度，或 小于40纳米，或小于20纳米，或小于10纳米，甚至小于5纳米。 这样的半导体可以在生长期间被掺杂。 这样的半导体可以是设备的一部分，其可以包括各种设备中的任何一种以及它们的组合。

公开(公告)号：US20070032051A1

公开(公告)日：2007-02-08

申请号：US11543336

申请日：2006-10-04

申请人： Charles Lieber ,  Yi Cui ,  Xiangfeng Duan ,  Yu Huang

发明人： Charles Lieber ,  Yi Cui ,  Xiangfeng Duan ,  Yu Huang

IPC分类号： H01G9/20

CPC分类号： H01L29/0665 ,  B01J23/50 ,  B01J23/52 ,  B01J23/72 ,  B01J35/0013 ,  B01J37/349 ,  B81C1/0019 ,  B81C1/00206 ,  B82Y10/00 ,  B82Y15/00 ,  B82Y30/00 ,  B82Y40/00 ,  C30B11/00 ,  C30B25/005 ,  C30B29/605 ,  G01N27/4146 ,  G01N33/54373 ,  G11C13/0014 ,  G11C13/0019 ,  G11C13/025 ,  G11C13/04 ,  G11C2213/77 ,  G11C2213/81 ,  H01L21/02521 ,  H01L21/02532 ,  H01L21/0254 ,  H01L21/02543 ,  H01L21/02557 ,  H01L21/0256 ,  H01L21/02573 ,  H01L21/02581 ,  H01L21/02603 ,  H01L21/02606 ,  H01L21/0262 ,  H01L21/02628 ,  H01L21/02631 ,  H01L21/02636 ,  H01L21/02639 ,  H01L21/02645 ,  H01L21/02653 ,  H01L23/53276 ,  H01L29/045 ,  H01L29/0673 ,  H01L29/068 ,  H01L29/16 ,  H01L29/1602 ,  H01L29/18 ,  H01L29/20 ,  H01L29/207 ,  H01L29/22 ,  H01L29/24 ,  H01L29/26 ,  H01L29/267 ,  H01L33/06 ,  H01L33/18 ,  H01L33/20 ,  H01L51/002 ,  H01L51/0048 ,  H01L2924/0002 ,  Y02E10/549 ,  Y02P70/521 ,  Y10S438/962 ,  Y10S977/762 ,  Y10S977/847 ,  Y10S977/858 ,  Y10S977/882 ,  Y10S977/883 ,  Y10S977/892 ,  Y10S977/936 ,  Y10T428/24 ,  H01L2924/00

摘要： A bulk-doped semiconductor that is at least one of the following: a single crystal, an elongated and bulk-doped semiconductor that, at any point along its longitudinal axis, has a largest cross-sectional dimension less than 500 nanometers, and a free-standing and bulk-doped semiconductor with at least one portion having a smallest width of less than 500 nanometers. Such a semiconductor may comprise an interior core comprising a first semiconductor; and an exterior shell comprising a different material than the first semiconductor. Such a semiconductor may be elongated and may have, at any point along a longitudinal section of such a semiconductor, a ratio of the length of the section to a longest width is greater than 4:1, or greater than 10:1, or greater than 100:1, or even greater than 1000:1. At least one portion of such a semiconductor may a smallest width of less than 200 nanometers, or less than 150 nanometers, or less than 100 nanometers, or less than 80 nanometers, or less than 70 nanometers, or less than 60 nanometers, or less than 40 nanometers, or less than 20 nanometers, or less than 10 nanometers, or even less than 5 nanometers. Such a semiconductor may be a single crystal and may be free-standing. Such a semiconductor may be either lightly n-doped, heavily n-doped, lightly p-doped or heavily p-doped. Such a semiconductor may be doped during growth. Such a semiconductor may be part of a device, which may include any of a variety of devices and combinations thereof, and a variety of assembling techniques may be used to fabricate devices from such a semiconductor. Two or more of such a semiconductors, including an array of such semiconductors, may be combined to form devices, for example, to form a crossed p-n junction of a device. Such devices at certain sizes may exhibit quantum confinement and other quantum phenomena, and the wavelength of light emitted from one or more of such semiconductors may be controlled by selecting a width of such semiconductors. Such semiconductors and device made therefrom may be used for a variety of applications.

公开(公告)号：US20060175601A1

公开(公告)日：2006-08-10

申请号：US11172408

申请日：2005-06-30

申请人： Charles Lieber ,  Xiangfeng Duan ,  Yi Cui ,  Yu Huang ,  Mark Gudiksen ,  Lincoln Lauhon ,  Jianfang Wang ,  Hongkun Park ,  Qingqiao Wei ,  Wenjie Liang ,  David Smith ,  Deli Wang ,  Zhaohui Zhong

发明人： Charles Lieber ,  Xiangfeng Duan ,  Yi Cui ,  Yu Huang ,  Mark Gudiksen ,  Lincoln Lauhon ,  Jianfang Wang ,  Hongkun Park ,  Qingqiao Wei ,  Wenjie Liang ,  David Smith ,  Deli Wang ,  Zhaohui Zhong

IPC分类号： H01L31/109

CPC分类号： C30B29/60 ,  B82Y10/00 ,  B82Y15/00 ,  B82Y30/00 ,  G01N27/4146 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/068 ,  H01L29/1606 ,  H01L29/2003 ,  H01L29/267 ,  H01L29/73 ,  H01L31/0352 ,  H01L31/08 ,  H01L33/18 ,  H01L33/20 ,  H01L51/0048

摘要： The present invention relates generally to sub-microelectronic circuitry, and more particularly to nanometer-scale articles, including nanoscale wires which can be selectively doped at various locations and at various levels. In some cases, the articles may be single crystals. The nanoscale wires can be doped, for example, differentially along their length, or radially, and either in terms of identity of dopant, concentration of dopant, or both. This may be used to provide both n-type and p-type conductivity in a single item, or in different items in close proximity to each other, such as in a crossbar array. The fabrication and growth of such articles is described, and the arrangement of such articles to fabricate electronic, optoelectronic, or spintronic devices and components. For example, semiconductor materials can be doped to form n-type and p-type semiconductor regions for making a variety of devices such as field effect transistors, bipolar transistors, complementary inverters, tunnel diodes, light emitting diodes, sensors, and the like.

公开(公告)号：US20050164432A1

公开(公告)日：2005-07-28

申请号：US11082372

申请日：2005-03-17

申请人： Charles Lieber ,  Yi Cui ,  Xiangfeng Duan ,  Yu Huang

发明人： Charles Lieber ,  Yi Cui ,  Xiangfeng Duan ,  Yu Huang

IPC分类号： H01L29/73 ,  C30B11/00 ,  C30B25/00 ,  G01N27/12 ,  G01N27/414 ,  G01N33/543 ,  G11C13/02 ,  H01L21/329 ,  H01L21/331 ,  H01L23/532 ,  H01L27/10 ,  H01L29/06 ,  H01L29/207 ,  H01L29/267 ,  H01L29/88 ,  H01L33/06 ,  H01L33/18 ,  H01L51/00 ,  H01L51/30 ,  H01L21/00 ,  H01L21/84

CPC分类号： H01L29/0665 ,  B01J23/50 ,  B01J23/52 ,  B01J23/72 ,  B01J35/0013 ,  B01J37/349 ,  B81C1/0019 ,  B81C1/00206 ,  B82Y10/00 ,  B82Y15/00 ,  B82Y30/00 ,  B82Y40/00 ,  C30B11/00 ,  C30B25/005 ,  C30B29/605 ,  G01N27/4146 ,  G01N33/54373 ,  G11C13/0014 ,  G11C13/0019 ,  G11C13/025 ,  G11C13/04 ,  G11C2213/77 ,  G11C2213/81 ,  H01L21/02521 ,  H01L21/02532 ,  H01L21/0254 ,  H01L21/02543 ,  H01L21/02557 ,  H01L21/0256 ,  H01L21/02573 ,  H01L21/02581 ,  H01L21/02603 ,  H01L21/02606 ,  H01L21/0262 ,  H01L21/02628 ,  H01L21/02631 ,  H01L21/02636 ,  H01L21/02639 ,  H01L21/02645 ,  H01L21/02653 ,  H01L23/53276 ,  H01L29/045 ,  H01L29/0673 ,  H01L29/068 ,  H01L29/16 ,  H01L29/1602 ,  H01L29/18 ,  H01L29/20 ,  H01L29/207 ,  H01L29/22 ,  H01L29/24 ,  H01L29/26 ,  H01L29/267 ,  H01L33/06 ,  H01L33/18 ,  H01L33/20 ,  H01L51/002 ,  H01L51/0048 ,  H01L2924/0002 ,  Y02E10/549 ,  Y02P70/521 ,  Y10S438/962 ,  Y10S977/762 ,  Y10S977/847 ,  Y10S977/858 ,  Y10S977/882 ,  Y10S977/883 ,  Y10S977/892 ,  Y10S977/936 ,  Y10T428/24 ,  H01L2924/00

摘要： A bulk-doped semiconductor that is at least one of the following: a single crystal, an elongated and bulk-doped semiconductor that, at any point along its longitudinal axis, has a largest cross-sectional dimension less than 500 nanometers, and a free-standing and bulk-doped semiconductor with at least one portion having a smallest width of less than 500 nanometers. Such a semiconductor may comprise an interior core comprising a first semiconductor; and an exterior shell comprising a different material than the first semiconductor. Such a semiconductor may be elongated and my have, at any point along a longitudinal section of such a semiconductor, a ratio of the length of the section to a longest width is greater than 4:1, or greater than 10:1, or greater than 100:1, or even greater than 1000:1. At least one portion of such a semiconductor may a smallest width of less than 200 nanometers, or less than 150 nanometers, or less than 100 nanometers, or less than 80 nanometers, or less than 70 nanometers, or less than 60 nanometers, or less than 40 nanometers, or less than 20 nanometers, or less than 10 nanometers, or even less than 5 nanometers. Such a semiconductor may be a single crystal and may be free-standing. Such a semiconductor may be either lightly n-doped, heavily n-doped, lightly p-doped or heavily p-doped. Such a semiconductor may be doped during growth. Such a semiconductor may be part of a device, which may include any of a variety of devices and combinations thereof, and, and a variety of assembling techniques may be used to fabricate devices from such a semiconductor. Two or more of such a semiconductors, including an array of such semiconductors, may be combined to form devices, for example, to form a crossed p-n junction of a device. Such devices at certain sizes may exhibit quantum confinement and other quantum phenomena, and the wavelength of light emitted from one or more of such semiconductors may be controlled by selecting a width of such semiconductors. Such semiconductors and device made therefrom may be used for a variety of applications.

公开(公告)号：US20210020996A1

公开(公告)日：2021-01-21

申请号：US16978520

申请日：2019-03-05

申请人： Yi Cui

发明人： Yi Cui ,  Yang Jin ,  Hui Wu ,  Kai Liu ,  Jialiang Lang

IPC分类号： H01M10/39 ,  H01M10/0525 ,  H01M10/0562 ,  H01M4/134 ,  H01M4/131 ,  H01M4/58 ,  H01M4/525 ,  H01M4/505 ,  H01M4/75 ,  H01M4/04

摘要： Molten lithium electrochemical cells are disclosed. A solid electrolyte separates a molten lithium metal or molten lithium metal alloy from a cathode. The molten lithium cells provide high Coulombic efficiency and energy efficiency at operating temperatures less than 600° C. The cells are useful for stationary energy storage in power grids.

公开(公告)号：US08951673B2

公开(公告)日：2015-02-10

申请号：US13482793

申请日：2012-05-29

申请人： Colin Wessells ,  Robert Huggins ,  Yi Cui ,  Mauro Pasta

发明人： Colin Wessells ,  Robert Huggins ,  Yi Cui ,  Mauro Pasta

IPC分类号： H01M4/58 ,  H01M10/054 ,  H01M4/02 ,  H01M4/505 ,  H01M10/0525 ,  H01M10/0568 ,  H01M6/04

CPC分类号： H01M10/054 ,  H01M4/02 ,  H01M4/366 ,  H01M4/505 ,  H01M4/58 ,  H01M6/045 ,  H01M10/0525 ,  H01M10/0568 ,  H01M10/36 ,  H01M2300/0005 ,  H01M2300/0091 ,  Y02E60/122 ,  Y02P70/54

摘要： A battery includes a cathode, an anode, and an aqueous electrolyte disposed between the cathode and the anode and including a cation A. At least one of the cathode and the anode includes an electrode material having an open framework crystal structure into which the cation A is reversibly inserted during operation of the battery. The battery has a reference specific capacity when cycled at a reference rate, and at least 75% of the reference specific capacity is retained when the battery is cycled at 10 times the reference rate.

摘要翻译： 电池包括阴极，阳极和设置在阴极和阳极之间并包含阳离子A的含水电解质。阴极和阳极中的至少一个包括具有开放框架晶体结构的电极材料，阳离子A 在电池运行期间可逆地插入。 当以参考速率循环时，电池具有参考比容量，并且当电池以参考速率的10倍循环时，保留参考比容量的至少75％。

公开(公告)号：US08889281B2

公开(公告)日：2014-11-18

申请号：US13287018

申请日：2011-11-01

申请人： Fabio La Mantia ,  Mauro Pasta ,  Heather Dawn Deshazer ,  Yi Cui

发明人： Fabio La Mantia ,  Mauro Pasta ,  Heather Dawn Deshazer ,  Yi Cui

IPC分类号： H01M8/18 ,  H01M14/00 ,  H01M6/34

CPC分类号： H01M14/00 ,  H01M6/34 ,  Y02E60/12

摘要： An electrochemical system includes: (1) a battery including an anode and a cathode; (2) a first source of a first electrolyte having a first concentration of ions; (3) a second source of a second electrolyte having a second concentration of the ions, wherein the second concentration is greater than the first concentration; and (4) a fluid conveyance mechanism connected between the battery and each of the first source and the second source. During charging of the battery, the anode and the cathode are at least partially immersed in the first electrolyte, and, during discharging of the battery, the anode and the cathode are at least partially immersed in the second electrolyte. The fluid conveyance mechanism exchanges the first electrolyte with the second electrolyte between charging and discharging of the battery, and exchanges the second electrolyte with the first electrolyte between discharging and charging of the battery.

摘要翻译： 电化学系统包括：（1）包括阳极和阴极的电池; （2）具有第一离子浓度的第一电解质的第一源; （3）具有第二浓度离子的第二电解质的第二源，其中第二浓度大于第一浓度; 和（4）连接在电池与第一源和第二源中的每一个之间的流体输送机构。 在电池充电期间，阳极和阴极至少部分地浸没在第一电解质中，并且在电池放电期间，阳极和阴极至少部分地浸没在第二电解质中。 流体输送机构在电池的充放电之间与第二电解质交换第一电解质，并且在电池的放电和充电之间与第一电解质交换第二电解质。

公开(公告)号：US08375456B2

公开(公告)日：2013-02-12

申请号：US12616917

申请日：2009-11-12

申请人： Jin Li ,  Yi Cui

发明人： Jin Li ,  Yi Cui

IPC分类号： G06F21/00

CPC分类号： H04L65/4076 ,  H04L29/06027 ,  H04L65/607 ,  H04L67/1002 ,  H04L67/101 ,  H04L67/104 ,  H04L67/1068 ,  H04L67/108 ,  H04L67/1091 ,  H04L67/1095 ,  H04L69/14

摘要： A DRM scheme that may be optionally invoked by the owner. With the DRM protection turned on, the media is encrypted before it is distributed in a P2P network, and is decrypted prior to its use (play back). The peers may still efficiently distribute and serve without authorization from the owner. Nevertheless, when the media is used (played back), the client node must seek proper authorization from the owner. The invention further provides a hierarchical DRM scheme wherein each packet of the media is associated with a different protection level. In the hierarchical DRM scheme of the invention there is usually an order of the protection level. As a result, in one embodiment of the invention, the decryption key of a lower protection layer is the hash of the decryption key at the higher protection level. That way, a user granted access to the high protection layer may simply hold a single license of that layer, and obtain decryption keys of that layer and below. The invention further provides for a process for managing digital rights to a scalable media file wherein a different encryption/decryption key is used to encrypt each truncatable media packet with a base layer without requiring additional storage space to store the key.