公开(公告)号：US20170236718A1

公开(公告)日：2017-08-17

申请号：US15433068

申请日：2017-02-15

Applicant: Cabot Microelectronics Corporation

Inventor： Benjamin PETRO ,  Glenn WHITENER ,  William WARD

IPC: H01L21/306 ,  C09K3/14 ,  H01L29/20 ,  C09G1/02

CPC classification number: H01L21/30625 ,  C09G1/02 ,  C09K3/1409 ,  C09K3/1436 ,  H01L21/02024 ,  H01L29/20

Abstract: Disclosed is a method of chemically-mechanically polishing a substrate. The method comprises, consists of, or consists essentially of (a) contacting a substrate containing at least one Group III-V material, with a polishing pad and a chemical-mechanical polishing composition comprising water, abrasive particles having a negative surface charge, and an oxidizing agent for oxidizing the Group III-V material in an amount of from about 0.01 wt. %to about 5 wt. %, wherein the polishing composition has a pH of from about 2 to about 5; (b) moving the polishing pad and the chemical-mechanical polishing composition relative to the substrate; and (c) abrading at least a portion of the substrate to polish the substrate. In some embodiments, the Group III-V material is a semiconductor that includes at least one element from Group III of the Periodic Table and at least one element from Group V of the Periodic Table.

公开(公告)号：US09735030B2

公开(公告)日：2017-08-15

申请号：US14478508

申请日：2014-09-05

Applicant: Fujifilm Planar Solutions, LLC

Inventor： Luling Wang ,  Abhudaya Mishra ,  Deepak Mahulikar ,  Richard Wen

IPC: B44C1/22 ,  C03C15/00 ,  C03C25/68 ,  C23F1/00 ,  H01L21/321 ,  C09G1/02

CPC classification number: H01L21/3212 ,  C09G1/02

Abstract: The present disclosure relates to polishing compositions that can polish Cobalt (Co) films in semiconductor substrates containing a multitude of films including Co, metals, metal oxides and dielectrics. These polishing compositions comprise an abrasive, a weak acid acting as a removal rate enhancer (RRE), a pH adjuster, and an azole-containing corrosion inhibitor (CI). The RRE, pH adjuster and CI have a pKa in the 1-18 range (1 (pKamin)

公开(公告)号：US09725620B2

公开(公告)日：2017-08-08

申请号：US14412366

申请日：2013-11-07

Applicant: GRIREM ADVANCED MATERIALS CO., LTD.

Inventor： Xiaowei Huang ,  Ying Yu ,  Zhiqi Long ,  Liangshi Wang ,  Dali Cui ,  Yongke Hou ,  Meisheng Cui

IPC: B24D3/00 ,  B24D3/02 ,  B24D11/00 ,  B24D18/00 ,  C09K3/14 ,  C09G1/02

CPC classification number: C09G1/02

Abstract: The present invention provides a cerium oxide based composite polishing powder and a preparation method thereof. The polishing powder contains the element magnesium in an amount of 0.005 wt %-5 wt % to magnesium oxide meter. The preparation method includes: (1) uniformly mixing a salt solution containing cerium serving as the main component of the polishing powder; (2) uniformly mixing a precipitating agent of an aqueous magnesium bicarbonate solution with the mixed solution prepared in step (1) to obtain a slurry; (3) aging the slurry prepared in step (2) for 0-48 h while the temperature of the slurry is kept at 30-90 degrees centigrade, and filtering the aged slurry to obtain the precursor powder of the polishing powder; (4) calcinating the precursor powder at 600-1000 degrees centigrade, then dispersing and separating the calcinated precursor powder to obtain the polishing powder. The present invention improves the polishing performance and the suspension performance of polishing powder.

公开(公告)号：US20170216993A1

公开(公告)日：2017-08-03

申请号：US15501530

申请日：2015-05-01

Applicant: FUJIMI INCORPORATED

Inventor： Maiko ASAI ,  Kazusei TAMAI ,  Hitoshi MORINAGA ,  Hiroshi ASANO

IPC: B24B37/24 ,  C09G1/02

CPC classification number: B24B37/24 ,  B24B37/00 ,  B24B37/044 ,  C09G1/02 ,  C09K3/1463

Abstract: Provided is a composition for polishing a titanium alloy material, which enables polishing of a titanium alloy material at a high polishing speed and can provide a polished titanium alloy material having excellent surface smoothness and having a highly glossy surface after polishing.The composition for polishing a titanium alloy material is a composition that is intended for polishing a titanium alloy material and comprises a compound having a function of dissolving at least one metal element other than titanium, which exists at a content of more than 0.5% by mass with respect to the total mass of the titanium alloy material, at a higher degree of solubility than that of titanium; and abrasive grains.

公开(公告)号：US09701871B2

公开(公告)日：2017-07-11

申请号：US14509081

申请日：2014-10-08

Applicant: Cabot Microelectronics Corporation

Inventor： Brian Reiss ,  John Clark ,  Lamon Jones ,  Jeffrey Gilliland ,  Michael White

IPC: C09K13/06 ,  C09G1/02 ,  C09K3/14 ,  H01L21/02

CPC classification number: C09G1/02 ,  C09K3/1463 ,  H01L21/02024

Abstract: The invention provides a polishing composition comprising (a) silica, (b) one or more compounds that increases the removal rate of silicon, (c) one or more tetraalkylammonium salts, and (d) water, wherein the polishing composition has a pH of about 7 to about 11. The invention further provides a method of polishing a substrate with the polishing composition.

公开(公告)号：US20170183538A1

公开(公告)日：2017-06-29

申请号：US15379861

申请日：2016-12-15

Applicant: K.C.Tech Co., Ltd.

Inventor： Jang Kuk KWON ,  Sung Pyo LEE ,  Chang Gil KWON ,  Jun Ha HWANG

IPC: C09G1/02 ,  H01L21/3105 ,  C09G1/04

CPC classification number: C09G1/02 ,  H01L21/31053

Abstract: An additive composition and a positive polishing slurry composition including the additive composition are provided. The additive composition includes a cationic compound, an organic acid, a nonionic compound, and a pH adjuster.

公开(公告)号：US20170178926A1

公开(公告)日：2017-06-22

申请号：US15129838

申请日：2015-03-30

Applicant: NITTA HAAS INCORPORATED

Inventor： Takayuki MATSUSHITA ,  Tomoki YAMASAKI

IPC: H01L21/321 ,  C09G1/02 ,  H01L21/3105

CPC classification number: H01L21/3212 ,  C09G1/02 ,  H01L21/02024 ,  H01L21/31053

Abstract: The present invention relates to a polishing composition including water and silica, wherein the silica has a BET specific surface area of 30 m2/g or more and an NMR specific surface area of 10 m2/g or more, and a polishing method using the polishing composition. The polishing composition of the present invention adopts silica having the BET specific surface area falling within the above-described range, and additionally having the NMR specific surface area falling within a specific range, and consequently attains a high polishing rate, and can maintain the polishing rate even when used for a long time.

公开(公告)号：US20170174939A1

公开(公告)日：2017-06-22

申请号：US15129835

申请日：2015-03-20

Applicant: NITTA HAAS INCORPORATED

Inventor： Masashi TERAMOTO ,  Tatsuya NAKAUCHI ,  Noriaki SUGITA ,  Shinichi HABA ,  Akiko MIYAMOTO

IPC: C09G1/02 ,  C09K3/14 ,  H01L21/02

CPC classification number: C09G1/02 ,  C09K3/1436 ,  C09K3/1463 ,  H01L21/02024

Abstract: Proposed is a polishing composition including hydroxyethyl cellulose, water and abrasive grains, wherein the hydroxyethyl cellulose has a molecular weight of 500,000 or more and 1,500,000 or less, and the proportion of the hydroxyethyl cellulose adsorbed to the abrasive grains is 30% or more and 90% or less.

公开(公告)号：US09685343B2

公开(公告)日：2017-06-20

申请号：US14910803

申请日：2014-06-12

Applicant: FUJIMI INCORPORATED

Inventor： Makoto Tabata ,  Shinichiro Takami ,  Shogaku Ide

IPC: H01L21/306 ,  C09G1/02 ,  H01L21/02 ,  C09K3/14 ,  B24B37/28

CPC classification number: H01L21/30625 ,  B24B37/28 ,  C09G1/02 ,  C09K3/1409 ,  C09K3/1436 ,  C09K3/1463 ,  H01L21/02024

Abstract: [Problem] To provide a method for producing a polished object, which can remarkably reduce a haze level on a surface of the object to be polished while defects are significantly reduced.[Solution] A method for producing a polished object, which includes a double-side polishing step in which an object to be polished is subjected to double-side polishing using a double-side polishing composition including first abrasive grains having an average primary particle diameter of 40 nm or more and a nitrogen-containing water-soluble polymer to obtain a double-side polished object; and a single-side polishing step in which the double-side polished object is subjected to single-side polishing using a single-side polishing composition including second abrasive grains having an average primary particle diameter of 40 nm or less and a water-soluble polymer, and in which a ratio of an average primary particle diameter (A) of the first abrasive grains with respect to an average primary particle diameter (B) of the second abrasive grains (A)/(B) is more than 1 and 2.5 or less.

公开(公告)号：US09685341B2

公开(公告)日：2017-06-20

申请号：US14382876

申请日：2013-03-12

Applicant: FUJIMI INCORPORATED

Inventor： Yoshio Mori ,  Kohsuke Tsuchiya ,  Maki Asada ,  Shuhei Takahashi

IPC: H01L21/306 ,  H01L21/321 ,  C09K3/14 ,  B24B1/00 ,  C09G1/00 ,  C09G1/04 ,  C09G1/06 ,  B24B37/04 ,  H01L21/02 ,  C09G1/02

CPC classification number: H01L21/30625 ,  B24B1/00 ,  B24B37/044 ,  C09G1/00 ,  C09G1/02 ,  C09G1/04 ,  C09G1/06 ,  C09K3/1436 ,  C09K3/1454 ,  C09K3/1463 ,  H01L21/02024 ,  H01L21/3212

Abstract: The polishing composition has a pH of 7 or more and is used in applications for polishing a silicon substrate. The polishing composition contains abrasive grains and a water-soluble polymer. The water-soluble polymer is a copolymer including a first monomer unit having a characteristic value P of 50-100 inclusive, and a second monomer unit having a characteristic value P of at least −100 and less than 50. The characteristic value P is the result of subtracting an adsorption coefficient S2 of the abrasive grains obtained through a specific standard test B from a wettability coefficient S1 of the silicon substrate obtained through a specific standard test A.