公开(公告)号：US20050145859A1

公开(公告)日：2005-07-07

申请号：US11066699

申请日：2005-02-24

Applicant: Hiroyuki Okuyama ,  Masato Doi ,  Goshi Biwa ,  Toyoharu Oohata ,  Tomoyuki Kikutani

Inventor： Hiroyuki Okuyama ,  Masato Doi ,  Goshi Biwa ,  Toyoharu Oohata ,  Tomoyuki Kikutani

IPC: H01L21/205 ,  H01L33/00 ,  H01L33/10 ,  H01L33/16 ,  H01L33/20 ,  H01L33/24 ,  H01L33/32 ,  H01L33/38 ,  H01L27/15

CPC classification number: H01L33/24 ,  H01L21/02381 ,  H01L21/02395 ,  H01L21/02409 ,  H01L21/02411 ,  H01L21/02521 ,  H01L21/02532 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/0256 ,  H01L21/02562 ,  H01L21/02573 ,  H01L21/0262 ,  H01L21/02642 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/32 ,  H01L2224/48137 ,  H01L2224/48139

Abstract: Semiconductor light-emitting devices are provided. The semiconductor light-emitting devices include a substrate and a crystal layer selectively grown thereon at least a portion of the crystal layer is oriented along a plane that slants to or diagonally intersect a principal plane of orientation associated with the substrate thereby for example, enhancing crystal properties, preventing threading dislocations, and facilitating device miniaturization and separation during manufacturing and use thereof.

公开(公告)号：US20040110002A1

公开(公告)日：2004-06-10

申请号：US10638546

申请日：2003-08-12

Inventor： Sungjee Kim ,  Moungi G. Bawendi

IPC: D02G003/00

CPC classification number: G01N33/588 ,  B82Y10/00 ,  B82Y15/00 ,  B82Y20/00 ,  B82Y30/00 ,  C09K11/883 ,  C30B7/00 ,  C30B29/605 ,  C30B33/00 ,  H01L21/0237 ,  H01L21/02409 ,  H01L21/02411 ,  H01L21/02521 ,  H01L21/0256 ,  H01L21/02562 ,  H01L21/02601 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/165 ,  H01L29/205 ,  H01L29/225 ,  H01L29/267 ,  H01L51/426 ,  Y02E10/549 ,  Y10S977/773 ,  Y10S977/774 ,  Y10S977/777 ,  Y10S977/811 ,  Y10T428/12021 ,  Y10T428/12528 ,  Y10T428/12986 ,  Y10T428/294 ,  Y10T428/2991 ,  Y10T428/315

Abstract: A semiconductor nanocrystal heterostructure has a core of a first semiconductor material surrounded by an overcoating of a second semiconductor material. Upon excitation, one carrier can be substantially confined to the core and the other carrier can be substantially confined to the overcoating.

Abstract translation: 半导体纳米晶体异质结构具有由第二半导体材料的外涂层包围的第一半导体材料的芯。 在激发时，一个载体可以基本上限于核心，另一个载体可以基本上局限于外涂层。

公开(公告)号：US5714006A

公开(公告)日：1998-02-03

申请号：US572883

申请日：1995-12-18

Applicant: Hirotaka Kizuki ,  Yasutomo Kajikawa

Inventor： Hirotaka Kizuki ,  Yasutomo Kajikawa

IPC: C30B29/38 ,  C30B29/48 ,  H01L21/20 ,  H01L21/203 ,  H01L21/205 ,  H01L33/12 ,  H01L33/16 ,  H01L33/32 ,  H01S5/00 ,  H01S5/323 ,  C30B25/09

CPC classification number: H01L33/007 ,  H01L21/02411 ,  H01L21/02433 ,  H01L21/0254 ,  H01L21/0262 ,  Y10S117/901

Abstract: A method of growing a compound semiconductor layer includes epitaxially growing a III-V compound semiconductor layer including nitrogen (N) for as the Group V element on a front surface of a semiconductor substrate of cadmium telluride (CdTe). Therefore, the atoms of the crystal lattice of the III-V compound semiconductor layer are periodically lattice-matched with the atoms of the crystal lattice of the CdTe semiconductor substrate, whereby the III-V compound semiconductor layer is epitaxially grown with high crystalline quality.

Abstract translation: 生长化合物半导体层的方法包括在碲化镉（CdTe）的半导体衬底的前表面上外延生长包含作为V族元素的氮（N）的III-V族化合物半导体层。 因此，III-V族化合物半导体层的晶格的原子与CdTe半导体衬底的晶格的原子周期性地晶格匹配，由此III-V族化合物半导体层以高结晶质量外延生长。

公开(公告)号：US5134091A

公开(公告)日：1992-07-28

申请号：US678434

申请日：1991-04-01

Applicant: Toyohiro Chikyou ,  Sinya Hashimoto ,  Satoshi Takahashi ,  Nobuyuki Koguchi

Inventor： Toyohiro Chikyou ,  Sinya Hashimoto ,  Satoshi Takahashi ,  Nobuyuki Koguchi

IPC: H01L21/368 ,  H01S5/34 ,  H01S5/347

CPC classification number: B82Y20/00 ,  H01L21/02409 ,  H01L21/02411 ,  H01L21/02463 ,  H01L21/02513 ,  H01L21/02628 ,  H01L21/02661 ,  H01S5/3412 ,  H01S5/347 ,  Y10S438/962

Abstract: A quantum effective device and its method of manufacture are disclosed, wherein said device comprises quantum well boxes composes of a semiconductor substrate and a compound semiconductor on the surface of the semiconductor substrate at least comprising a first and a second elemental component and a semiconductor overlayer overlying said quantum well boxes and the surface portion of the exposed semiconductor substrate and wherein the quantum well boxes have an epitaxially grown single crystal structure obtained by depositing fine droplets of liquid phase composed of the first elemental component on the surface of the semiconductor substrate in the heated state and then incorporating a second elemental component different from the first elemental component in said droplets.

Abstract translation: 公开了一种量子有效装置及其制造方法，其中所述装置包括由半导体衬底和半导体衬底的表面上的化合物半导体构成的量子阱盒，该半导体衬底至少包括第一和第二元素组件和半导体覆层 所述量子阱盒和暴露的半导体衬底的表面部分，并且其中量子阱盒具有外延生长的单晶结构，其通过在半导体衬底的表面上沉积由第一元素组分构成的液相的微小液滴而被加热 然后加入与所述液滴中的第一元素成分不同的第二元素成分。

公开(公告)号：US4920067A

公开(公告)日：1990-04-24

申请号：US253609

申请日：1988-10-05

Applicant: Jamie Knapp

Inventor： Jamie Knapp

IPC: H01L21/368 ,  H01L31/18

CPC classification number: H01L31/1832 ,  H01L21/02411 ,  H01L21/02562 ,  H01L21/02625 ,  H01L21/02628 ,  Y10S148/101 ,  Y10S148/118

Abstract: Hg.sub.1-x Cd.sub.x Te, Hg.sub.1-x Zn.sub.x Te and other related II-VI ternary semiconductor compounds are important strategic materials for photovoltaic infrared detector applications. Liquid phase epitaxy employing a tellurium-rich molten nonstoichiometric solution is an accepted technology for thin film epitaxial crystal growth.This present invention describes a crystal growth process employing specially encapsulated graphite components which directly facilitate a high volume, high quality large area epitaxial layer production.

Abstract translation: Hg1-xCdxTe，Hg1-xZnxTe和其他相关的II-VI三元半导体化合物是光伏红外探测器应用的重要战略材料。 使用富碲熔融非化学计量溶液的液相外延是薄膜外延晶体生长的公认技术。 本发明描述了采用特别封装的石墨组分的晶体生长方法，其直接促进了大体积，高质量的大面积外延层生产。

公开(公告)号：US4872943A

公开(公告)日：1989-10-10

申请号：US207259

申请日：1988-06-15

Applicant: Sergio Bernardi

Inventor： Sergio Bernardi

IPC: C30B19/04 ,  H01L21/368

CPC classification number: H01L21/02628 ,  C30B19/04 ,  C30B29/48 ,  H01L21/02411 ,  H01L21/02562 ,  H01L21/02625 ,  Y10S117/906 ,  Y10S148/101

Abstract: A process for making single-crystal mercury cadmium telluride layers by epitaxial growth on a cadmium telluride substrate, performed inside a reactor with two communication zones, kept at different and controlled temperatures. The growth solution is directly prepared inside the reactor by subjecting weighed cadmium and tellurium quantities and a mercury bath to a specific thermal cycle so that the mercury concentration in the solution is established by absorption from the vapor phase and is controlled by the lower temperature level.

公开(公告)号：US4828938A

公开(公告)日：1989-05-09

申请号：US851004

申请日：1986-04-11

Applicant: Lawrence S. Lichtmann ,  James D. Parsons

Inventor： Lawrence S. Lichtmann ,  James D. Parsons

IPC: C01B19/04 ,  C23C16/18 ,  C23C16/22 ,  C23C16/28 ,  C23C16/30 ,  C23C16/44 ,  C30B25/02 ,  C30B29/48 ,  H01L21/365

CPC classification number: H01L21/0262 ,  C23C16/306 ,  C30B25/02 ,  C30B29/48 ,  H01L21/02398 ,  H01L21/02411 ,  H01L21/02562 ,  Y10S428/938

Abstract: A method for chemical vapor deposition of materials containing tellurium, such as cadmium telluride and mercury cadmium telluride, wherein the reactant source of the tellurium is a tellurophene or methyltellurol. These reactant sources have high vapor pressures, and the reactant source vapors emitted from the reactant sources have decomposition temperatures of less than about 300.degree. C., so that deposition may be accomplished at low temperatures of about 250.degree. C. The reactant source vapor containing tellurium is mixed with a reactant source vapor containing another substance to be codeposited, such as dimethylcadmium or dimethylmercury, and contacted with a substrate maintained at the deposition temperature, the deposition being preferably accomplished in an inverted vertical chemical vapor deposition reactor.

Abstract translation: 用于化学气相沉积包含碲的材料的方法，例如碲化镉和碲化汞镉，其中碲的反应物源是一种特氟氯丙烯或甲基碲酚。 这些反应物源具有高蒸气压，并且从反应物源排出的反应物源蒸气具有小于约300℃的分解温度，使得可以在约250℃的低温下进行沉积。含有 将碲与含有待共沉积的另一物质的反应物源蒸气混合，例如二甲基镉或二甲基汞，并与保持在沉积温度的基材接触，沉积优选在倒置的垂直化学气相沉积反应器中完成。

公开(公告)号：US4566918A

公开(公告)日：1986-01-28

申请号：US641483

申请日：1984-08-16

Applicant: Stuart J. C. Irvine ,  John B. Mullin ,  Jean Giess

Inventor： Stuart J. C. Irvine ,  John B. Mullin ,  Jean Giess

IPC: C23C16/30 ,  H01L21/365 ,  H01L29/22 ,  H01L31/0248 ,  H01L31/0296 ,  H01L31/09 ,  H01L31/18 ,  H01L21/36 ,  H01L21/477

CPC classification number: C23C16/45561 ,  C23C16/306 ,  H01L21/0237 ,  H01L21/02411 ,  H01L21/0248 ,  H01L21/02507 ,  H01L21/02562 ,  H01L21/02573 ,  H01L21/0262 ,  H01L29/2203 ,  H01L31/02966 ,  H01L31/1832 ,  Y10S148/063 ,  Y10S148/064 ,  Y10S148/16

Abstract: A layer of Cd.sub.x Hg.sub.1-x Te is grown on a substrate by growing layers of HgTe t.sub.1 thick, and CdTe t.sub.2 thick alternately. The thicknesses t.sub.1 and t.sub.2 combined are less than 0.5 .mu.m so that interdiffusion occurs during growth to give a single layer of Cd.sub.x Hg.sub.1-x Te. The HgTe layers are grown by flowing a Te alkyl into a vessel containing the substrate and filled with an Hg atmosphere by an Hg bath. The CdTe layers are grown by flowing of Cd alkyl into the vessel where it combines preferentially with the Te on the substrate. Varying the ratio of t.sub.1 to t.sub.2 varies the value of x. Dopants such as alkyls or hydrides of Al, Ga, As and P, or Si, Ge, As and P respectively may be introduced to dope the growing layer.

Abstract translation: CdxHg1-xTe层通过生长HgTe t1厚层和CdTe t2交替厚度生长在衬底上。 组合的厚度t1和t2小于0.5μm，从而在生长期间发生相互扩散，得到单层CdxHg1-xTe。 通过将Te烷基流入含有底物的容器中并通过Hg浴填充Hg气氛来生长HgTe层。 CdTe层通过将Cd烷基流入容器中而生长，其中其优先与衬底上的Te结合。 改变t1到t2的比率会改变x的值。 可以引入掺杂剂如Al，Ga，As和P，或Si，Ge，As和P的烷基或氢化物以掺杂生长层。

公开(公告)号：US4487813A

公开(公告)日：1984-12-11

申请号：US536018

申请日：1983-09-26

Applicant: Robert E. Kay

Inventor： Robert E. Kay

IPC: H01L21/363 ,  H01L31/0296 ,  H01L31/18 ,  H01L31/00

CPC classification number: H01L31/1832 ,  H01L21/02411 ,  H01L21/02562 ,  H01L21/02631 ,  H01L31/02966 ,  Y10T428/12528 ,  Y10T428/12785

Abstract: Method for growing HgCdTe (15) upon a CdTe substrate (5) using a HgTe source (3) and close-spaced vapor phase epitaxy (CSVPE). A processing temperature T of between 520.degree. C. and 625.degree. C. is employed over a processing time t of between approximately 1/4 and 4 hours. The thickness A of the grown HgCdTe (15) is a linear function of processing time t. The mole fraction x of cadmium in the HgCdTe (15) is a linear function of temperature T and an exponential function of the mole fraction y of mercury in the source (3). The lower the relative amount of mercury in the source (3), the greater the relative amount of mercury in the end product (15), and vice versa. Any crystal plane and any axial orientation of the CdTe substrate (5) can be used without affecting the rate of growth of the HgCdTe (15), the single crystal nature of the HgCdTe (15), or the mirror-like finish of its surface. At least 90% of the transition between the CdTe substrate (5) and the grown HgCdTe layer (15) occurs within the first 20% of the HgCdTe layer (15); for distances greater than this away from the substrate (5), the HgCdTe (15) exhibits a substantially uniform x.

Abstract translation: 使用HgTe源（3）和紧密间隔的气相外延（CSVPE）在CdTe衬底（5）上生长HgCdTe（15）的方法。 在大约1/4至4小时之间的处理时间t内采用520℃至625℃之间的加工温度T. 生长的HgCdTe（15）的厚度A是处理时间t的线性函数。 HgCdTe（15）中镉的摩尔分数x是温度T的线性函数，以及源（3）中汞的摩尔分数y的指数函数。 源（3）中汞的相对量越低，最终产品（15）中汞的相对量越大，反之亦然。 可以使用CdTe基板（5）的任何晶面和任何轴向取向，而不影响HgCdTe（15）的生长速率，HgCdTe（15）的单晶性质或其表面的镜面光洁度 。 CdTe衬底（5）和生长的HgCdTe层（15）之间的至少90％的转变发生在HgCdTe层（15）的前20％内; 对于远离衬底（5）的距离，HgCdTe（15）表现出基本均匀的x。

公开(公告)号：US4171996A

公开(公告)日：1979-10-23

申请号：US930536

申请日：1978-08-01

Applicant: Vadim N. Maslov ,  Oleg E. Korobov ,  Alla N. Lupacheva ,  Alexandr N. Vlasov ,  Viktor V. Myasoedov ,  Ellin P. Bochkarev ,  Felix A. Gimelfarb ,  Izidor K. Bronshtein ,  Natalya I. Lukicheva ,  Evgeny V. Sinitsyn ,  Jury V. Sokurenko ,  Elena S. Jurova ,  Elena M. Kistova ,  Marina A. Konstantinova ,  Veniamin M. Samaginov

Inventor： Vadim N. Maslov ,  Oleg E. Korobov ,  Alla N. Lupacheva ,  Alexandr N. Vlasov ,  Viktor V. Myasoedov ,  Ellin P. Bochkarev ,  Felix A. Gimelfarb ,  Izidor K. Bronshtein ,  Natalya I. Lukicheva ,  Evgeny V. Sinitsyn ,  Jury V. Sokurenko ,  Elena S. Jurova ,  Elena M. Kistova ,  Marina A. Konstantinova ,  Veniamin M. Samaginov

IPC: C30B25/04 ,  C30B25/22 ,  G01L9/00 ,  G01N27/12 ,  G01N27/414 ,  G01N33/00 ,  H01L21/203 ,  H01L21/205 ,  H01L21/363 ,  H01L21/365 ,  H01L29/201 ,  H01L29/221 ,  H01L29/225 ,  H01L29/24 ,  H01L29/267 ,  H01L29/84 ,  H01L33/00 ,  H01S5/32 ,  H01L21/20 ,  H01L29/14

CPC classification number: H01L21/0256 ,  C30B25/04 ,  C30B25/22 ,  G01L9/0098 ,  G01N33/0031 ,  H01L21/02395 ,  H01L21/02411 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/0251 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02557 ,  H01L21/02568 ,  H01L21/02576 ,  H01L29/201 ,  H01L29/221 ,  H01L29/225 ,  H01L29/245 ,  H01L29/267 ,  H01L29/84 ,  H01L33/002 ,  H01L33/0025 ,  H01L33/0029 ,  H01S5/32 ,  Y10S438/936

Abstract: A method for producing a heterogeneous semiconductor structure with a composition gradient in which a semiconductor material is transferred through the gaseous phase onto the substrate from a source comprising the two AB and AC components and including a number of parallel strips, each of said strips having a constant ratio between the AB and AC components. At first, the source is gradually brought under the substrate at a speed chosen within the range of 100 cm per hour to 0.1 cm per hour, bringing first the strip of the source, which has a maximum content of the AB component. As all the strips have been brought under the substrate, the source is stopped for a period of time required for the formation of the main layer of a required thickness.

Abstract translation: 一种用于制造具有组成梯度的非均匀半导体结构的方法，其中半导体材料通过气相从包含两个AB和AC部件的源传输到衬底上，并且包括多个平行条，每个所述条具有 AB和AC组件之间的恒定比例。 首先，将源逐渐以100cm /小时至0.1cm /小时的速度选择在基底下，首先将具有最大含量的AB成分的源的条带。 由于所有条带已经被置于基底之下，所以源被停止一段时间以形成所需厚度的主层所需的时间。