公开(公告)号：US20060234430A1

公开(公告)日：2006-10-19

申请号：US11276634

申请日：2006-03-08

申请人： Ping Liu ,  Yiliang Wu ,  Beng Ong

发明人： Ping Liu ,  Yiliang Wu ,  Beng Ong

IPC分类号： H01L21/84 ,  H01L21/31

CPC分类号： H01L29/513 ,  H01L51/0036 ,  H01L51/0097 ,  H01L51/052 ,  H01L51/0529 ,  H01L51/0537 ,  H01L51/0541 ,  H01L51/0545

摘要： A process for fabricating a thin film transistor including: (a) depositing a semiconductor layer; and (b) depositing a multilayer gate dielectric prior to or subsequent to the depositing the semiconductor layer, wherein the multilayer dielectric comprises: (i) a first layer comprising a first material selected from the group consisting of an optionally substituted silsesquioxane, an optionally substituted silsesquioxane-metal oxide hybrid composition, an optionally substituted siloxane-metal oxide hybrid composition, and a mixture thereof, and (ii) a second layer in contact with the first layer, wherein the second layer comprises a second material, wherein the first layer is closer to the semiconductor layer than the second layer.

摘要翻译： 一种制造薄膜晶体管的方法，包括：（a）沉积半导体层; 以及（b）在沉积半导体层之前或之后沉积多层栅极电介质，其中所述多层电介质包括：（i）第一层，其包含选自任选取代的倍半硅氧烷，任选取代的第一材料 倍半硅氧烷 - 金属氧化物杂化组合物，任选取代的硅氧烷 - 金属氧化物杂化组合物及其混合物，和（ii）与第一层接触的第二层，其中第二层包括第二材料，其中第一层为 比第二层更靠近半导体层。

公开(公告)号：US20060231908A1

公开(公告)日：2006-10-19

申请号：US11104728

申请日：2005-04-13

申请人： Ping Liu ,  Yiliang Wu ,  Beng Ong

发明人： Ping Liu ,  Yiliang Wu ,  Beng Ong

IPC分类号： H01L29/94

CPC分类号： H01L29/513 ,  H01L51/0036 ,  H01L51/0097 ,  H01L51/052 ,  H01L51/0529 ,  H01L51/0537 ,  H01L51/0541 ,  H01L51/0545

摘要： An electronic device composed of: a multilayer dielectric including: (i) a first layer composed of a first material selected from the group consisting of an optionally substituted silsesquioxane, an optionally substituted silsesquioxane-metal oxide hybrid composition, an optionally substituted siloxane-metal oxide hybrid composition, and a mixture thereof, and (ii) a second layer in contact with the first layer, wherein the second layer comprises a second material.

摘要翻译： 一种电子器件，包括：多层电介质，其包括：（i）由选自任选取代的倍半硅氧烷，任选取代的倍半硅氧烷 - 金属氧化物杂化组合物，任选取代的硅氧烷 - 金属氧化物组成的组中的第一材料构成的第一层 杂化组合物及其混合物，和（ii）与第一层接触的第二层，其中第二层包含第二材料。

公开(公告)号：US20060097360A1

公开(公告)日：2006-05-11

申请号：US10982472

申请日：2004-11-05

申请人： Yiliang Wu ,  Beng Ong ,  Ping Liu

发明人： Yiliang Wu ,  Beng Ong ,  Ping Liu

IPC分类号： H01L23/58

CPC分类号： H01L23/5329 ,  H01L51/0036 ,  H01L51/0537 ,  H01L51/0541 ,  H01L51/0545 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

摘要： A dielectric material prepared from a siloxy/metal oxide hybrid composition, and electronic devices such as thin film transistors comprising such dielectric material are provided herein. The siloxy/metal oxide hybrid composition comprises a siloxy component such as, for example, a siloxane or silsesquioxane. The siloxy/metal oxide hybrid composition is useful for the preparation of dielectric layers for thin film transistors using solution deposition techniques

摘要翻译： 本文提供由甲硅烷氧基/金属氧化物杂化组合物制备的电介质材料，以及包括这种介电材料的电子器件如薄膜晶体管。 甲硅烷氧基/金属氧化物杂化组合物包含甲硅烷氧基组分，例如硅氧烷或倍半硅氧烷。 甲硅烷氧基/金属氧化物杂化组合物可用于使用溶液沉积技术制备用于薄膜晶体管的电介质层

公开(公告)号：US20050259212A1

公开(公告)日：2005-11-24

申请号：US11128309

申请日：2005-05-13

申请人： Sang Lee ,  Jong Park ,  Yi Lyu ,  Bon Koo ,  Young Byun ,  Eun Seo

发明人： Sang Lee ,  Jong Park ,  Yi Lyu ,  Bon Koo ,  Young Byun ,  Eun Seo

IPC分类号： H01L21/31 ,  C08G77/04 ,  C08K5/05 ,  C08K5/057 ,  C08K5/56 ,  C08L83/04 ,  C08L83/06 ,  C08L101/00 ,  C09D5/25 ,  C09D183/04 ,  C09D183/06 ,  H01L21/312 ,  H01L21/316 ,  H01L21/3205 ,  H01L29/786 ,  H01L51/05 ,  H01L51/30 ,  H01L51/40 ,  C09K19/02

CPC分类号： H01L21/02126 ,  C08G77/04 ,  C08K5/057 ,  C08K5/56 ,  C08L83/04 ,  C09D183/06 ,  H01B3/18 ,  H01L21/02172 ,  H01L21/02186 ,  H01L21/02282 ,  H01L21/3122 ,  H01L51/0052 ,  H01L51/0537 ,  Y10T428/31504 ,  Y10T428/31663 ,  C08L2666/02

摘要： A composition for preparing an organic insulator, the composition comprising (i) at least one organic-inorganic hybrid material; (ii) at least one organometallic compound and/or organic polymer; and (iii) at least one solvent for dissolving the above two components, so that an organic insulator using the same has a low threshold voltage and driving voltage, and high charge carrier mobility and Ion/Ioff ratio, thereby enhancing insulator characteristics. Further, the preparation of organic insulating film can be carried out by wet process, so that simplification of the process and cut of cost are achieved.

摘要翻译： 一种用于制备有机绝缘体的组合物，所述组合物包含（i）至少一种有机 - 无机混合材料; （ii）至少一种有机金属化合物和/或有机聚合物; 和（iii）用于溶解上述两种组分的至少一种溶剂，使得使用该溶剂的有机绝缘体具有低阈值电压和驱动电压，并且高电荷载流子迁移率和I / SUB> off 比，从而提高绝缘体特性。 此外，有机绝缘膜的制备可以通过湿法进行，从而实现了工艺的简化和成本的削减。

公开(公告)号：US06891190B2

公开(公告)日：2005-05-10

申请号：US10154013

申请日：2002-05-23

申请人： Ke Keryn Lian ,  Robert T. Croswell ,  Aroon Tungare ,  Manes Eliacin

发明人： Ke Keryn Lian ,  Robert T. Croswell ,  Aroon Tungare ,  Manes Eliacin

IPC分类号： H01L21/316 ,  H01L25/04 ,  H01L27/28 ,  H01L51/05 ,  H05K1/18 ,  H01L29/76

CPC分类号： H01L51/0537 ,  H01L21/31691 ,  H01L25/046 ,  H01L27/28 ,  H01L51/0512 ,  H01L2924/0002 ,  H01L2924/09701 ,  H05K1/185 ,  H01L2924/00

摘要： An organic semiconductor device (11) can be embedded within a printed wiring board (10). In various embodiments, the embedded device (11) can be accompanied by other organic semiconductor devices (31) and/or passive electrical components (26). When so embedded, conductive vias (41, 42, 43) can be used to facilitate electrical connection to the embedded device. In various embodiments, specific categories of materials and/or processing steps are used to facilitate the making of organic semiconductors and/or passive electrical components, embedded or otherwise.

摘要翻译： 有机半导体器件（11）可以嵌入印刷线路板（10）内。 在各种实施例中，嵌入式设备（11）可以伴随有其他有机半导体器件（31）和/或无源电子部件（26）。 当嵌入时，可以使用导电通孔（41,42,43）来促进与嵌入式装置的电连接。 在各种实施例中，使用特定类别的材料和/或处理步骤来促进有机半导体和/或嵌入式或其它方式的无源电组件的制造。

公开(公告)号：US06586791B1

公开(公告)日：2003-07-01

申请号：US09619302

申请日：2000-07-19

申请人： Tzu-Chen Lee ,  Nelson B. O'Bryan

发明人： Tzu-Chen Lee ,  Nelson B. O'Bryan

IPC分类号： H01L2976

CPC分类号： H01L29/517 ,  H01L21/31691 ,  H01L29/51 ,  H01L51/0052 ,  H01L51/0537 ,  H01L51/0545

摘要： An insulating layer in a field effect transistor is formed of superfine ceramic particles dispersed in a polymeric matrix. The characteristics of the insulating layer can be changed by varying the mix of ceramic particles and matrix components. Appropriate selection of components can provide a high dielectric constant material which is not subject to pinholes, has a high voltage breakdown and is chemically resistant. The material can be applied at relatively low processing temperatures, using a wide range of coating techniques, and is highly suited for use with polymeric substrates.

摘要翻译： 场效应晶体管中的绝缘层由分散在聚合物基质中的超细陶瓷颗粒形成。 可以通过改变陶瓷颗粒和基质组分的混合来改变绝缘层的特性。 组件的适当选择可以提供不受针孔影响的高介电常数材料，具有高电压击穿并具有耐化学腐蚀性。 该材料可以在相对低的加工温度下使用，使用广泛的涂覆技术，并且非常适合用于聚合物基材。

公开(公告)号：US10038068B2

公开(公告)日：2018-07-31

申请号：US15228943

申请日：2016-08-04

申请人： SK INNOVATION CO., LTD.

发明人： Jun-Hyung Kim

IPC分类号： H01L29/788 ,  H01L29/423 ,  H01L21/28 ,  H01L29/66 ,  H01L29/49 ,  H01L51/05 ,  H01L27/11521 ,  H01L29/51

CPC分类号： H01L29/42332 ,  H01L27/11521 ,  H01L29/40114 ,  H01L29/4966 ,  H01L29/518 ,  H01L29/66825 ,  H01L29/7883 ,  H01L51/0529 ,  H01L51/0533 ,  H01L51/0537 ,  H01L51/055 ,  H01L51/0591

摘要： A non-volatile memory device includes a floating gate for charging and discharging of charges over a substrate. The floating gate comprises a linker layer formed over the substrate and including linkers to be bonded to metal ions and metallic nanoparticles formed out of the metal ions over the linker layer.

公开(公告)号：US20180198071A1

公开(公告)日：2018-07-12

申请号：US15803074

申请日：2017-11-03

申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION

发明人： Matthew W. Copel ,  Damon B. Farmer ,  Talia S. Gershon ,  Paul M. Solomon

IPC分类号： H01L51/00 ,  H01L51/05

CPC分类号： H01L51/0048 ,  H01L51/0021 ,  H01L51/0537 ,  H01L51/0545 ,  H01L51/0558 ,  H01L51/102

摘要： A field effect transistor includes a carbon nanotube layer formed adjacent to a gate structure. Two intermetallic contacts are formed on the carbon nanotube layer. The two intermetallic contacts include an oxidation resistant compound having a work function below about 4.4 electron-volts.

公开(公告)号：US09691997B2

公开(公告)日：2017-06-27

申请号：US14301370

申请日：2014-06-11

申请人： Eastman Kodak Company

发明人： Deepak Shukla ,  Kevin M. Donovan

IPC分类号： C08F228/02 ,  C08F222/10 ,  H01L51/05 ,  H01L51/00

CPC分类号： H01L51/0545 ,  C01B17/64 ,  C08F12/30 ,  C08F128/04 ,  C08G18/0828 ,  C08G77/28 ,  C08G77/392 ,  G03F7/0275 ,  H01L51/0053 ,  H01L51/0097 ,  H01L51/052 ,  H01L51/0537 ,  H01L2251/5338

摘要： A semiconductor device can be prepared with a gate dielectric layer that comprises: (1) a photochemically or thermally crosslinked product of a photocurable or thermally curable thiosulfate-containing polymer that has a Tg of at least 50° C. and that comprises: an organic polymer backbone comprising (a) recurring units comprising pendant thiosulfate groups; and further comprises charge balancing cations, and (2) optionally, an electron-accepting photosensitizer component.

公开(公告)号：US09620731B2

公开(公告)日：2017-04-11

申请号：US14034949

申请日：2013-09-24

申请人： PANASONIC CORPORATION

发明人： Takaaki Ukeda ,  Akihito Miyamoto ,  Norishige Nanai

IPC分类号： H01L51/52 ,  H01L51/05 ,  H01L29/51 ,  H01L27/32 ,  H01L29/66 ,  H01L29/786

CPC分类号： H01L51/5203 ,  H01L27/3262 ,  H01L27/3274 ,  H01L29/511 ,  H01L29/512 ,  H01L29/66742 ,  H01L29/786 ,  H01L51/0516 ,  H01L51/052 ,  H01L51/0525 ,  H01L51/0537 ,  H01L51/0545 ,  H01L51/055

摘要： A thin film transistor according to the present disclosure including: a gate electrode above a substrate; a gate insulating layer covering the gate electrode; a semiconductor layer above the gate insulating layer; and a source electrode and a drain electrode which are above the gate insulating layer, and electrically connected to the semiconductor layer, in which the gate insulating layer includes a first area and a second area, the first area being above the gate electrode, the second area being different from an area above the gate electrode, and made of a same substance as the first area, and the first area has a higher density than a density of the second area.