Control apparatus for varying a rotational or angular phase between two
rotational shafts, preferably applicable to a valve timing control
apparatus for an internal combustion engine
    1.
    发明授权
    Control apparatus for varying a rotational or angular phase between two rotational shafts, preferably applicable to a valve timing control apparatus for an internal combustion engine 有权
    用于改变两个旋转轴之间的旋转或角相的控制装置,优选地适用于内燃机的气门正时控制装置

    公开(公告)号:US6155221A

    公开(公告)日:2000-12-05

    申请号:US440096

    申请日:1999-11-15

    申请人: Masayasu Ushida

    发明人: Masayasu Ushida

    IPC分类号: F01L1/344

    摘要: A shoe housing 3 is connected to and rotatable together with an input shaft. A vane rotor 9 is connected to an output shaft and accommodated in shoe housing 3 so as to cause a rotation within a predetermined angle with respect to shoe housing 3. Vane rotor 9 and shoe housing 3 cooperatively define hydraulic chambers 10, 11, 12 and 13 whose volumes are variable in accordance with a rotational position of vane rotor 9 with respect to shoe housing 3. A locking member 7 is accommodated in vane rotor 9 and shiftable in a direction parallel to a rotational axis common to shoe housing 3 and vane rotor 9. And, an engaging bore 20, formed on a front plate 4 secured to shoe housing 3, receives locking member 7 through a tapered surface. With this arrangement, it becomes possible to provide a control apparatus for varying a rotational or angular phase between the input and output shafts, while adequately maintaining the durability of the apparatus with a simple configuration easy to manufacture and suitable for downsizing without causing hammering noises or increasing operational resistances.

    摘要翻译: 靴壳体3与输​​入轴连接并与其一起旋转。 叶片转子9连接到输出轴并且容纳在鞋壳3中,以便相对于鞋壳3旋转预定角度。叶片转子9和鞋壳3协同地限定液压室10,11,12和 13,其体积根据叶片转子9相对于鞋壳体3的旋转位置是可变的。锁定构件7容纳在叶片转子9中,并且可沿与鞋壳3和叶片转子共同的旋转轴线平行的方向 并且,形成在固定到鞋壳体3的前板4上的接合孔20通过锥形表面接收锁定构件7。 利用这种布置,可以提供一种用于改变输入和输出轴之间的旋转角度或角度相位的控制装置,同时以容易制造的简单构造充分保持装置的耐久性,并且适合于小型化而不引起锤击噪声或 增加操作电阻。

    Automobile navigation apparatus and method for setting detours in the
same
    2.
    发明授权
    Automobile navigation apparatus and method for setting detours in the same 失效
    汽车导航装置及其设置方法相同

    公开(公告)号:US06118389A

    公开(公告)日:2000-09-12

    申请号:US607773

    申请日:1996-02-27

    CPC分类号: G01C21/3415

    摘要: An automobile navigating apparatus capable of setting a detour for a route to a desired destination. A memory device stores link information about links that constitute a map. Based on the link information, a route calculating section sets a route running from a start point to a desired destination by using evaluation values assigned to the links. The route thus set is shown on a display device in a highlighted manner. At the same time, directions to the desired destination along the route are instructed verbally. When a detour switch is operated, a detour for the route is calculated by a detour calculating section. In the detour calculation, the detour calculating section lowers the evaluation value for the link concerned along the previously set route to prevent the same from being set again.

    摘要翻译: 一种能够设置到期望目的地的路线的绕行的汽车导航装置。 存储设备存储关于构成地图的链接的链接信息。 基于链接信息,路线计算部通过使用分配给链接的评价值来设定从起始点到期望目的地的路线。 如此设置的路由以突出显示的方式显示在显示设备上。 同时,口头指示沿着路线到达目的地的方向。 当绕行开关操作时,通过绕行计算部分计算路线的绕行。 在绕行计算中,迂回计算部分沿着先前设定的路线降低相关链路的评估值,以防止相同的重新设置。

    Printed circuit board having a plurality of via-holes
    5.
    发明授权
    Printed circuit board having a plurality of via-holes 失效
    具有多个通孔的印刷电路板

    公开(公告)号:US6043986A

    公开(公告)日:2000-03-28

    申请号:US715515

    申请日:1996-09-18

    摘要: A printed circuit board, having a plurality of via-holes provided in an area where circuit elements are arranged, includes a thermally conductive material having thermally good conductivity, for example copper, and the thermally good conductive material is formed in an inner wall of each of the plurality of via-holes. Each of the plurality of via-holes has, for example, a circular shape, and is arranged in the form of hexagonal or triangular lattice in the area where the circuit elements are arranged. Further, preferably, a diameter of each of the plurality of via-holes is equal to a hole pitch having an allowance .+-.0.3 mm. According to above structure, it is possible to provide a plurality of via-holes per unit area with high density on the printed circuit board and to improve the thermal conductivity of the printed circuit board by effectively radiating the heat generated from the circuit elements.

    摘要翻译: 具有设置在电路元件布置的区域中的多个通孔的印刷电路板包括具有导热性良好的例如铜的导热材料,并且热良好的导电材料形成在每个的内壁上 的多个通孔。 多个通孔中的每一个具有例如圆形,并且在布置电路元件的区域中以六角形或三角形格子的形式布置。 此外,优选地,多个通孔中的每一个的直径等于具有余量+/- 0.3mm的孔间距。 根据上述结构,可以在印刷电路板上提供高密度单位面积的多个通孔,并且通过有效地辐射由电路元件产生的热量来提高印刷电路板的导热性。

    Silicon carbide semiconductor device with trench
    6.
    发明授权
    Silicon carbide semiconductor device with trench 失效
    具有沟槽的碳化硅半导体器件

    公开(公告)号:US6020600A

    公开(公告)日:2000-02-01

    申请号:US938805

    申请日:1997-09-26

    摘要: A silicon carbide semiconductor device having a high blocking voltage, low loss, and a low threshold voltage is provided. An n.sup.+ type silicon carbide semiconductor substrate 1, an n.sup.- type silicon carbide semiconductor substrate 2, and a p type silicon carbide semiconductor layer 3 are successively laminated on top of one another. An n.sup.+ type source region 6 is formed in a predetermined region of the surface in the p type silicon carbide semiconductor layer 3, and a trench 9 is formed so as to extend through the n.sup.+ type source region 6 and the p type silicon carbide semiconductor layer 3 into the n.sup.- type silicon carbide semiconductor layer 2. A thin-film semiconductor layer (n type or p type) 11a is extendedly provided on the surface of the n.sup.+ type source region 6, the p type silicon carbide semiconductor layer 3, and the n.sup.- type silicon carbide semiconductor layer 2 in the side face of the trench 9. A gate electrode layer 13 is disposed through a gate insulating layer 12 within the trench 9. A source electrode layer 15 is provided on the surface of the p type silicon carbide semiconductor layer 3 and on the surface of the n.sup.+ type source region 6, and a drain electrode layer 16 is provided on the surface of the n.sup.+ type silicon carbide semiconductor substrate 1.

    摘要翻译: 提供了具有高阻断电压,低损耗和低阈值电压的碳化硅半导体器件。 n +型碳化硅半导体衬底1,n型碳化硅半导体衬底2和p型碳化硅半导体层3相互层叠在一起。 在p型碳化硅半导体层3的表面的预定区域中形成n +型源极区6,并且形成沟槽9,以延伸穿过n +型源极区6和p型碳化硅半导体层 在n型碳化硅半导体层2的表面上延伸设置有薄膜半导体层(n型或p型)11a,在n +型源极区6,p型碳化硅半导体层3的表面上, 在沟槽9的侧面中的n型碳化硅半导体层2.栅极电极层13通过沟槽9内的栅极绝缘层12设置。源电极层15设置在p型表面上 碳化硅半导体层3和n +型源极区6的表面,以及在n +型碳化硅半导体衬底1的表面上设置漏电极层16。

    Electronic component layout determination method and a manufacturing
method using the same
    7.
    发明授权
    Electronic component layout determination method and a manufacturing method using the same 失效
    电子元件布局确定方法和使用该方法的制造方法

    公开(公告)号:US6006425A

    公开(公告)日:1999-12-28

    申请号:US670441

    申请日:1996-06-26

    摘要: An electronic parts layout determination method enables manufacture of a wide variety of electronic products with enhanced efficiency and in a short time. For all kinds of electronic parts selected for the manufacture of all of the electronic products, the electronic parts are divided into a plurality of speed groups based on the allowable rotation speed limits of mounting heads during rotation of a rotary table. The speed groups are subjected to a sequencing procedure. Electronic parts used for manufacture of each type of electronic product are then classified into groups, each group including a different kind of electronic part. The resulting parts groups are further classified into subgroups, each subgroup corresponding to one of the speed groups. These subgroups of electronic parts are arranged in a specific order and electronic parts belonging to each speed group are arranged so that a part having a low frequency of usage is placed near a neighboring speed group.

    摘要翻译: 一种电子零件布局确定方法能够以更高的效率和在短时间内制造各种各样的电子产品。 对于选择用于制造所有电子产品的各种电子部件,基于旋转台旋转期间的安装头的允许转速限制,电子部件被分成多个速度组。 对速度组进行测序程序。 然后将用于制造每种类型的电子产品的电子部件分成组,每组包括不同种类的电子部件。 所得到的部件组进一步分为子组,每个子组对应于速度组之一。 电子部件的这些子组以特定的顺序排列,并且属于各速度组的电子部件被布置成使得具有低使用频率的部分被放置在邻近的速度组附近。

    Refrigerating apparatus and modulator
    8.
    再颁专利
    Refrigerating apparatus and modulator 失效
    制冷装置和调制器

    公开(公告)号:USRE36408E

    公开(公告)日:1999-11-30

    申请号:US498077

    申请日:1995-07-05

    摘要: A modulator in a coolant recirculation line for a refrigerating apparatus. The modulator is used for storing an excess amount of the coolant recirculated in the system. The modulator has a space extending vertically, upward and a bottom end connected to the recirculating line at a position downstream of a condenser, in such a manner that only a part of the coolant passed through the condenser is introduced into the modulator to compensate for variations in the amount of coolant needed for recirculation in the system. The modulator can be arranged in the middle of the heat exchanger, and defines therein a boundary between the liquid phase and the gas phase, for a separation of the gas from the coolant, so that the portion of the heat exchanger downstream of the modulator can operate as a super cooler.

    摘要翻译: 用于制冷装置的冷却剂再循环管线中的调节器。 调制器用于储存在系统中再循环的过量的冷却剂。 调制器具有垂直向上延伸的空间,并且底端在冷凝器下游的位置处连接到再循环管线,使得只有一部分通过冷凝器的冷却剂被引入调制器以补偿变化 在系统中再循环所需的冷却剂量。 调节器可以布置在热交换器的中间,并且在其中限定了液相和气相之间的边界,用于将气体与冷却剂分离,使得调制器下游的热交换器的部分可以 作为一个超级冷却器。

    Method for fabricating semiconductor device having thin-film resistor
    9.
    发明授权
    Method for fabricating semiconductor device having thin-film resistor 失效
    制造具有薄膜电阻器的半导体器件的方法

    公开(公告)号:US5989970A

    公开(公告)日:1999-11-23

    申请号:US774796

    申请日:1996-12-30

    CPC分类号: H01L28/24

    摘要: Even when a contact hole is formed before thin-film resistor formation, a contact area exposed in the contact hole is prevented from damaging. A semiconductor element is formed in a silicon semiconductor substrate and an oxide film is formed on the surface of the semiconductor substrate. Then, a contact hole is formed on the oxide film and moreover, a CrSiN film serving as a thin-film resistor and a TiW film serving as a barrier metal are formed on the oxide film. The TiW film is patterned by a mask and the CrSiN film is patterned through chemical dry etching. Finally, an Al electrode is formed on the semiconductor element and the CrSiN film through the contact hole and moreover a protective film is formed thereon.

    摘要翻译: 即使在形成薄膜电阻器之前形成接触孔,也可以防止在接触孔中暴露的接触区域的损伤。 半导体元件形成在硅半导体衬底中,并且在半导体衬底的表面上形成氧化物膜。 然后,在氧化膜上形成接触孔,此外,在氧化膜上形成用作薄膜电阻器的CrSiN膜和用作阻挡金属的TiW膜。 通过掩模对TiW膜进行构图,并通过化学干蚀刻对CrSiN膜进行图案化。 最后,通过接触孔在半导体元件和CrSiN膜上形成Al电极,并且在其上形成保护膜。

    Insulated gate type bipolar-transistor
    10.
    发明授权
    Insulated gate type bipolar-transistor 失效
    绝缘栅型双极晶体管

    公开(公告)号:US5973338A

    公开(公告)日:1999-10-26

    申请号:US947402

    申请日:1997-10-08

    CPC分类号: H01L29/1095 H01L29/7395

    摘要: An insulated gate type bipolar-transistor (IGBT) incorporates an excess voltage protecting function and drain voltage fixing function in a monolithic structure. Impurity concentration ND and the thickness of an n.sup.- type drain layer (3) is set so that a depletion region propagating from a p type base layer (7) reaches a p.sup.+ type drain layer at a voltage (V.sub.DSP) lower than a voltage (V.sub.DSS) at which avalanche breakdown is caused within the IGBT element when voltage is applied between the source and the drain.

    摘要翻译: 绝缘栅型双极晶体管(IGBT)在整体结构中包含过电压保护功能和漏极电压固定功能。 杂质浓度ND和n型漏极层(3)的厚度被设定为使得从ap型基极层(7)传播的耗尽区域在低于电压(VDSS)的VDSP下达到p +型漏极层 ),当在源极和漏极之间施加电压时,在IGBT元件内引起雪崩击穿。