Charged particle ray apparatus and pattern measurement method
    1.
    发明授权
    Charged particle ray apparatus and pattern measurement method 有权
    带电粒子装置和图案测量方法

    公开(公告)号:US08890068B2

    公开(公告)日:2014-11-18

    申请号:US14002275

    申请日:2012-01-27

    摘要: Provided is a technique to automatize a synthesis function of signal charged particles having different energies. A charged particle beam apparatus includes: a charged particle source configured to irradiate a sample with a primary charged particle ray; a first detector configured to detect a first signal electron having first energy from signal charged particles generated from the sample; a second detector configured to detect a second signal electron having second energy from signal charged particles generated from the sample; a first operation part configured to change a synthesis ratio of a signal intensity of the first signal electron and a signal intensity of the second signal electron and to generate a detected image corresponding to each synthesis ratio; a second operation part configured to calculate a ratio of signal intensities corresponding to predetermined two areas of the detected image generated for each synthesis ratio; and a third operation part configured to determine a mixture ratio to be used for acquisition of the detected image on a basis of a change of the ratio of signal intensities.

    摘要翻译: 提供了一种使具有不同能量的信号带电粒子的合成功能自动化的技术。 带电粒子束装置包括:带电粒子源,被配置为用一次带电粒子射线照射样品; 第一检测器,被配置为检测从所述样品产生的信号带电粒子的具有第一能量的第一信号电子; 第二检测器,被配置为检测从样品产生的信号带电粒子的具有第二能量的第二信号电子; 第一操作部,被配置为改变第一信号电子的信号强度和第二信号电子的信号强度的合成比,并且生成与每个合成比相对应的检测图像; 第二操作部,被配置为计算与针对每个合成比生成的检测图像的预定的两个区域相对应的信号强度的比率; 以及第三操作部件,被配置为基于信号强度比的变化来确定用于获取检测到的图像的混合比率。

    SCANNING ELECTRON MICROSCOPE AND LENGTH MEASURING METHOD USING THE SAME
    4.
    发明申请
    SCANNING ELECTRON MICROSCOPE AND LENGTH MEASURING METHOD USING THE SAME 审中-公开
    扫描电子显微镜和使用该扫描电子显微镜的长度测量方法

    公开(公告)号:US20130292568A1

    公开(公告)日:2013-11-07

    申请号:US13993829

    申请日:2011-12-05

    IPC分类号: H01J37/05 H01J37/10

    摘要: This electron scanning microscope comprises an electron source (102), electron optical systems (109, 110, 111) for exposing a sample (113) to primary electron beams (138), an electron detector (127) for detecting signal electrons (139) emitted from the sample, and a deceleration electrical field-type energy filter (108). The deceleration electrical field-type energy filter has a conductor thin film (304) for distinguishing the energy of signal electrons. With this configuration, it is possible to realize a scanning electron microscope having a deceleration electrical field-type energy filter with which high energy resolution is obtained, even in a case where the scanning electron microscope has a retarding optical system.

    摘要翻译: 该电子扫描显微镜包括用于将样品(113)暴露于一次电子束(138)的电子源(102),用于检测信号电子(139)的电子检测器(127)的电子光学系统(109,110,111) 从所述样品发射的减速电场型能量过滤器(108)。 减速电场型能量滤波器具有用于区分信号电子能量的导体薄膜(304)。 利用这种结构,即使在扫描电子显微镜具有延迟光学系统的情况下,也可以实现具有能够获得高能量分辨率的减速电场型能量过滤器的扫描电子显微镜。

    Scanning electron microscope and method for detecting an image using the same
    5.
    发明授权
    Scanning electron microscope and method for detecting an image using the same 有权
    扫描电子显微镜及使用其的图像检测方法

    公开(公告)号:US08405025B2

    公开(公告)日:2013-03-26

    申请号:US12244188

    申请日:2008-10-02

    IPC分类号: G01N23/00

    摘要: A scanning electron microscope includes an electron beam source which emits an electron beam, a beam current controller which controls a beam current of the electron beam, an electron beam converger which converges the electron beam on a surface of a sample, an electron beam scanner which scans the electron beam on the surface of the sample, a table which mounts the sample and moves at least in one direction, a detector which detects a secondary electron or a reflected electron emanated from the sample by the scan of the electron beam, an image former which forms an image of the sample based on a detection value of the detector, an image processor which processes the image formed by the image former. The beam current controller controls the beam current of the electron beam by changing transmittance of the electron beam in an irradiation path of the electron beam.

    摘要翻译: 扫描电子显微镜包括发射电子束的电子束源,控制电子束的束电流的束流控制器,将电子束会聚在样品的表面上的电子束会聚器,电子束扫描器 扫描样品表面上的电子束,安装样品并至少沿一个方向移动的台面;检测器,其通过扫描电子束检测从样品发射的二次电子或反射电子;图像 前者,其基于检测器的检测值形成样本的图像,处理由图像形成器形成的图像的图像处理器。 束电流控制器通过改变电子束的照射路径中的电子束的透射率来控制电子束的束流。

    HERMETIC FEEDTHROUGH
    6.
    发明申请

    公开(公告)号:US20130032378A1

    公开(公告)日:2013-02-07

    申请号:US13564475

    申请日:2012-08-01

    IPC分类号: H01B17/26 B32B38/00 B05D3/02

    CPC分类号: A61N1/3754

    摘要: A hermetic feedthrough for an implantable medical device includes a sheet having a hole, where the sheet includes a ceramic comprising alumina. The feedthrough also includes a second material substantially filling the hole, where the second material includes a platinum powder mixture and an alumina additive. The platinum powder mixture includes a first platinum powder having a median particle size of between approximately 3 and 10 micrometers and a second platinum powder that is coarser than the first platinum powder and has a median particle size of between approximately 5 and 20 micrometers. The platinum powder mixture includes between approximately 50 and 80 percent by weight of the first platinum powder and between approximately 20 and 50 percent by weight of the second platinum powder. The first and second materials have a co-fired bond therebetween that hermetically seals the hole.

    摘要翻译: 用于可植入医疗装置的密封馈通包括具有孔的片,其中片包括包含氧化铝的陶瓷。 馈通还包括基本上填充孔的第二材料,其中第二材料包括铂粉末混合物和氧化铝添加剂。 铂粉末混合物包括中值粒径在约3微米至10微米之间的第一铂粉末和比第一铂粉末粗的第二铂粉末,其中位粒度在约5微米至20微米之间。 铂粉末混合物包含第一铂粉末的约50至80重量%和第二铂粉末的约20至50重量%。 第一和第二材料之间具有共烧结,密封该孔。

    Inspection system and inspection method
    7.
    发明申请
    Inspection system and inspection method 有权
    检验制度和检验方法

    公开(公告)号:US20080073533A1

    公开(公告)日:2008-03-27

    申请号:US11703154

    申请日:2007-02-07

    IPC分类号: G21K7/00

    摘要: There is a need for inspecting a heightwise variation in a sample. A holder holds a sample. A charge control unit charges the sample held by the holder. A retarding power supply applies a voltage to the sample held by the holder. An electro-optic system radiates an electron beam to the sample applied with a voltage by the retarding power supply and images a mirror electron returning near the surface of the sample. An image processing unit processes a mirror image resulting from imaging the mirror electron. The image processing unit outputs information corresponding to a difference between mirror images, i.e., a mirror image acquired by imaging the mirror electron and a mirror image for a prepared standard preparation, as a heightwise variation in a sample.

    摘要翻译: 需要检查样品的高度变化。 持有人持有样本。 收费控制单元收取由持有人持有的样本。 延迟电源对由保持器保持的样品施加电压。 电光系统通过延迟电源将电子束辐射到施加有电压的样品,并对在样品表面附近返回的镜电子进行成像。 图像处理单元处理由镜电子成像产生的镜像。 图像处理单元输出与镜像相对应的信息,即通过将镜像电子成像获得的镜像和准备的标准品的镜像作为样品的高度变化。

    Inspection Apparatus and Inspection Method
    8.
    发明申请
    Inspection Apparatus and Inspection Method 有权
    检验仪器和检验方法

    公开(公告)号:US20070228276A1

    公开(公告)日:2007-10-04

    申请号:US11692263

    申请日:2007-03-28

    IPC分类号: G21K7/00

    摘要: When performing an inspection using a charge control function in a SEM wafer inspection apparatus, acceleration voltage, control voltage and deceleration voltage are changed in conjunction so that incident energy determined by “acceleration voltage−deceleration voltage” and bias voltage determined by “deceleration voltage−control voltage” do not change. By this means, charge of a wafer can be controlled, while restraining electrostatic lens effect generated near a control electrode. As a result, an inspection using a charge control function at low incident energy and in a wide viewing field can be performed, and a highly sensitive inspection of semiconductor patterns subject to damages due to electron beam irradiation can be realized. Acceleration voltage, control voltage and deceleration voltage are changed in conjunction so that incident energy determined by “acceleration voltage−deceleration voltage” and bias voltage determined by “deceleration voltage−control voltage” do not change.

    摘要翻译: 当在SEM晶片检查装置中使用充电控制功能进行检查时,加速电压,控制电压和减速电压结合起来,使得由“加速电压 - 减速电压”确定的入射能量和由“减速电压 - 控制电压“不变。 通过这种方式,可以控制晶片的电荷,同时抑制在控制电极附近产生的静电透镜效应。 结果,可以执行使用低入射能量和宽视场中的电荷控制功能的检查,并且可以实现由于电子束照射而受到损害的半导体图案的高灵敏度检查。 加速电压,控制电压和减速电压结合起来,使得由“加速电压 - 减速电压”确定的入射能量和由“减速电压控制电压”确定的偏置电压不变。

    Pattern defect inspection method and apparatus thereof
    9.
    发明申请
    Pattern defect inspection method and apparatus thereof 有权
    图案缺陷检查方法及其装置

    公开(公告)号:US20070085005A1

    公开(公告)日:2007-04-19

    申请号:US11449650

    申请日:2006-06-09

    IPC分类号: G21K7/00

    摘要: In the present invention, the structure of an electrification control electrode is changed from a grid type to a slit type and thereby shadows are not formed when a wafer is irradiated with a beam. Further, a beam forming slit is disposed ahead of an electrification control slit, thus the electrification control slit is prevented from being irradiated with an electron beam for preliminary electrification, and thereby secondary electrons which disturb the control of the electrification are inhibited from being generated. The shape of the slit is designed so that the strength of an electron beam may gradually decrease toward both the ends of an electron beam irradiation region in the longitudinal direction thereof. Furthermore, a preliminary static eliminator to remove or reduce the unevenness in an electrification potential distribution which has undesirably been formed earlier is disposed.

    摘要翻译: 在本发明中,充电控制电极的结构从栅格型切换为狭缝型,从而在用光束照射晶片时不形成阴影。 此外,在充电控制狭缝的前方设置有光束形成狭缝,防止了带电控制狭缝被用于预充电的电子束照射,从而抑制了妨碍电气控制的二次电子的产生。 狭缝的形状被设计成使得电子束的强度可以朝着电子束照射区域的纵向的两端逐渐减小。 此外,设置用于去除或减少不期望地形成的带电电位分布的不均匀性的初步除电器。

    Electron microscope application apparatus and sample inspection method

    公开(公告)号:US20060289755A1

    公开(公告)日:2006-12-28

    申请号:US11442566

    申请日:2006-05-30

    IPC分类号: G21K7/00

    摘要: A charge control electrode emitting photoelectrons is disposed just above a wafer (sample) in parallel thereto, and the electrode has a through hole so that ultraviolet light can be irradiated to the wafer through the charge control electrode. Specifically, a metal plate which is formed in mesh or includes one or plural holes is used as the charge control electrode. By disposing the charge control electrode just above the sample in parallel thereto, when negative voltage is applied to the electrode, electric field approximately perpendicular to the wafer is generated. Therefore, photoelectrons are efficiently absorbed in the wafer. Also, by using the charge control electrode having approximately the same size as that of the wafer, charges on a whole surface of the wafer can be removed collectively and uniformly. Therefore, time required for the process can be reduced.