公开(公告)号：US20110122303A1

公开(公告)日：2011-05-26

申请号：US12521690

申请日：2007-12-29

申请人： Manabu Bonkohara

发明人： Manabu Bonkohara

IPC分类号： H04N5/335

CPC分类号： H01L27/14618 ,  H01L27/14625 ,  H01L27/14683 ,  H01L2224/16 ,  H01L2924/01004 ,  H01L2924/01057 ,  H01L2924/01078 ,  H01L2924/3025

摘要： Image quality degradation due to external light irradiated to an edge section of a transparent cover of a solid-state imaging device and external light propagating in the cover is prevented with a simple structure.A glass cover 60 formed to cover the whole surface of an imaging region 26 of a solid-state imaging element 10 is constituted by a transmission section 60a corresponding to the imaging region 26, and an edge section 60b that surrounds the transmission section 60a outside the transmission section 60a. The edge section 60b of the cover 60 is selectively removed around a periphery of the edge section 60b, thereby forming a frustum-shaped part whose cross-sectional area decreases monotonously from its exit side to its incidence side in the cover 60. An optical function film 63 having an optical absorption, reflection, or scattering action is formed on an outer face of the frustum-shaped part.

摘要翻译： 由于照射到固态成像装置的透明盖的边缘部分的外部光以及在盖中传播的外部光的图像质量劣化被以简单的结构来防止。 形成为覆盖固态成像元件10的成像区域26的整个表面的玻璃盖60由对应于成像区域26的透射部分60a和围绕发射部分60a的边缘部分60b构成 发送部60a。 盖60的边缘部60b围绕边缘部60b的周边被选择性地去除，从而形成截面积从盖体60的出射侧到其入射侧单调减小的截头圆锥形部。光学功能 在截头圆锥形部分的外表面上形成具有光吸收，反射或散射作用的薄膜63。

公开(公告)号：US5883426A

公开(公告)日：1999-03-16

申请号：US844320

申请日：1997-04-18

申请人： Kenichi Tokuno ,  Ikushi Morisaki ,  Akihiro Doya ,  Manabu Bonkohara ,  Naoji Senba ,  Yuuzou Shimada ,  Kazuaki Utumi

发明人： Kenichi Tokuno ,  Ikushi Morisaki ,  Akihiro Doya ,  Manabu Bonkohara ,  Naoji Senba ,  Yuuzou Shimada ,  Kazuaki Utumi

IPC分类号： H01L23/427 ,  H01L23/31 ,  H01L23/367 ,  H01L25/065 ,  H01L25/07 ,  H01L25/10 ,  H01L25/11 ,  H01L25/18 ,  H01L23/02

CPC分类号： H01L23/3672 ,  H01L23/3107 ,  H01L23/467 ,  H01L25/105 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2225/1094 ,  H01L23/427 ,  H01L2924/15311 ,  H01L2924/15331

摘要： A stack module is provided which relieves thermal stress generated in a heat-radiating element and provides improved cooling efficiency. Connection bumps of a plurality of mounting substrates, onto which are mounted semiconductor chips are used to stack the substrates to four levels, three wave-shaped heat-radiating elements, made of copper, being in thermal contact between the semiconductor chips of three of the mounting substrates and the rear surfaces of three of the mounting substrates, making use of the spring elasticity of the heat-radiating elements to establish this thermal contact.

摘要翻译： 提供了一种减轻在散热元件中产生的热应力并提供改善的冷却效率的堆叠模块。 使用安装有半导体芯片的多个安装基板的连接凸块将基板堆叠成四个级别，三个由铜构成的波浪形散热元件在三个半导体芯片的半导体芯片之间热接触 安装基板和三个安装基板的后表面，利用散热元件的弹簧弹性来建立这种热接触。

公开(公告)号：US5063435A

公开(公告)日：1991-11-05

申请号：US441356

申请日：1989-11-22

申请人： Satoru Okamoto ,  Kazufumi Terazi ,  Seiichi Nishino ,  Manabu Bonkohara

发明人： Satoru Okamoto ,  Kazufumi Terazi ,  Seiichi Nishino ,  Manabu Bonkohara

IPC分类号： H01L21/8247 ,  G11C16/18 ,  H01L23/02 ,  H01L29/788 ,  H01L29/792

CPC分类号： G11C16/18 ,  H01L2224/48091 ,  H01L2224/73265

摘要： The present invention relates to a semiconductor casing which permits transmitting ultraviolet rays to a semiconductor chip within the casing. The semiconductor casing includes the substrate formed by a thin metal plate for mounting the semiconductor chip, a ceramic frame fixed to the periphery of the substrate, a ceramic cap which covers the semiconductor chip, is mounted on the ceramic frame and allows transmission of ultraviolet rays, and leads which are sandwiched between the ceramic frame and the ceramic cap to allow the electrical connection of the semiconductor chip.

公开(公告)号：US20140015119A1

公开(公告)日：2014-01-16

申请号：US13976813

申请日：2011-12-27

申请人： Manabu Bonkohara

发明人： Manabu Bonkohara

IPC分类号： H01L23/46

CPC分类号： H01L23/46 ,  H01L23/473 ,  H01L24/16 ,  H01L25/0657 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06565 ,  H01L2225/06589 ,  H01L2924/12044 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/00

摘要： To provide a mounting structure of a semiconductor device/electronic component that suppresses temperature rise of a semiconductor device and/or an electronic component having large power consumption due to heat generation thereof, resulting in stable operation.The mounting comprises an interposer 10; a semiconductor device 11 mounted on the surface 10a of the interposer 10; and a cover 12 that forms an inner space S along with the interposer 10; wherein the cover 12 is closely adhered and fixed on the surface 10a of the interposer 10 to so as to include the semiconductor device 11. The cover 12 has an inlet 13 for introducing a heat-absorbing fluid L from outside, and an outlet 14 for discharging the fluid L from the inner space S to outside. The inner space S is a closed space excluding the inlet 13 and the outlet 14.

摘要翻译： 为了提供半导体器件/电子部件的安装结构，其抑制半导体器件和/或由于其发热而具有大功率消耗的电子部件的温度升高，从而导致稳定的操作。 安装件包括插入件10; 安装在插入件10的表面10a上的半导体器件11; 以及与插入器10一起形成内部空间S的盖12; 其中盖12紧密地粘附并固定在插入件10的表面10a上以便包括半导体器件11.盖12具有用于从外部引入吸热液L的入口13和用于 将液体L从内部空间S排出到外部。 内部空间S是除了入口13和出口14之外的封闭空间。

公开(公告)号：US20110127652A1

公开(公告)日：2011-06-02

申请号：US12523118

申请日：2007-01-15

申请人： Manabu Bonkohara

发明人： Manabu Bonkohara

IPC分类号： H01L29/06 ,  H01L21/50

CPC分类号： H01L21/561 ,  H01L23/3135 ,  H01L23/552 ,  H01L24/45 ,  H01L24/48 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2225/0651 ,  H01L2225/06513 ,  H01L2225/06527 ,  H01L2225/06541 ,  H01L2225/06582 ,  H01L2225/06586 ,  H01L2225/06589 ,  H01L2924/01004 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/04941 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： A three-dimensional semiconductor integrated circuit device is provided. A first semiconductor chip includes a solid-state circuit and is smaller than a base, and is stacked on the base. The first chip is buried by a first filling material having approximately the same contour as the base. Buried electrodes that penetrate through the first chip along its thickness direction are formed in the first chip. A second semiconductor chip includes a solid-state circuit and is smaller than the base, and is stacked on the first chip. The second chip is buried by a second filling material having approximately the same contour as the base. Buried electrodes that penetrate through the second chip along its thickness direction are formed in the second chip. The first and second filling materials have processibilities required for forming the buried electrodes and thermal expansion coefficients equivalent to those of the first and second chips, respectively.

摘要翻译： 提供一种三维半导体集成电路器件。 第一半导体芯片包括固态电路并且小于基极，并且堆叠在基底上。 第一芯片被具有与基座大致相同轮廓的第一填充材料掩埋。 在第一芯片中形成有沿其厚度方向穿过第一芯片的埋入电极。 第二半导体芯片包括固态电路并且小于基极，并且堆叠在第一芯片上。 第二芯片被第二填充材料掩埋，其具有与基座大致相同的轮廓。 在第二芯片中形成有沿其厚度方向穿过第二芯片的埋入电极。 第一和第二填充材料分别具有形成埋入电极所需的处理能力和与第一和第二芯片的热膨胀系数相当的热膨胀系数。

公开(公告)号：US4714952A

公开(公告)日：1987-12-22

申请号：US792971

申请日：1985-10-30

申请人： Kouichi Takekawa ,  Manabu Bonkohara

发明人： Kouichi Takekawa ,  Manabu Bonkohara

IPC分类号： H01L27/00 ,  H01L23/12 ,  H01L23/495 ,  H01L23/498 ,  H01L25/00 ,  H01L27/01 ,  H01L27/13 ,  H05K3/46

CPC分类号： H01L24/32 ,  H01L23/49503 ,  H01L23/49589 ,  H01L23/498 ,  H01L24/49 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49109 ,  H01L2224/4911 ,  H01L2224/49171 ,  H01L2224/73265 ,  H01L24/45 ,  H01L24/48 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01028 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01056 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/04953 ,  H01L2924/07802 ,  H01L2924/14 ,  H01L2924/15153 ,  H01L2924/15165 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19103 ,  H01L2924/19107 ,  H01L2924/30105 ,  H01L2924/30107

摘要： A capacitor built-in integrated circuit packaged unit comprising an electrically conductive support member, first and second lead elements associated with the conductive support member, a stack of a plurality of layers comprising a first insulating layer of a highly dielectric material formed on the conductive support member, an electrically conductive layer on the first insulating layer, and a second insulating layer on the conductive layer, the conductive layer having a portion exposed by the second insulating layer, a semiconductor integrated circuit chip having first and second electrodes which are electrically isolated from each other, the second insulating layer intervening between the conductive layer and the semiconductor integrated circuit chip, a bonding wire electrically connecting the first electrode to the first lead element, and a bonding wire electrically connecting the second electrode to the exposed portion of the conductive layer and to the second lead element. The dielectric material forming the first insulating layer provides a capacitor between the first and second electrodes on the semiconductor integrated circuit chip.

摘要翻译： 一种电容器内置集成电路封装单元，包括导电支撑构件，与导电支撑构件相关联的第一和第二引线元件，多层的堆叠，其包括形成在导电支撑件上的高电介质材料的第一绝缘层 在所述第一绝缘层上的导电层，以及在所述导电层上的第二绝缘层，所述导电层具有由所述第二绝缘层露出的部分，半导体集成电路芯片，具有第一和第二电极，所述半导体集成电路芯片与 相互之间，介于导电层和半导体集成电路芯片之间的第二绝缘层，将第一电极与第一引线元件电连接的接合线以及将第二电极与导电层的露出部分电连接的接合线 和第二引线元件。 形成第一绝缘层的电介质材料在半导体集成电路芯片上的第一和第二电极之间提供电容器。

公开(公告)号：US09386685B2

公开(公告)日：2016-07-05

申请号：US13977908

申请日：2011-12-28

申请人： Manabu Bonkohara

发明人： Manabu Bonkohara

IPC分类号： H05K1/02 ,  H01L23/34 ,  H01L23/498 ,  H01L25/065 ,  H05K7/20 ,  H01L23/467 ,  H01L23/473 ,  H01L23/00

CPC分类号： H05K1/0203 ,  H01L23/34 ,  H01L23/467 ,  H01L23/473 ,  H01L23/49827 ,  H01L24/48 ,  H01L24/73 ,  H01L25/0657 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/451 ,  H01L2224/48227 ,  H01L2224/48472 ,  H01L2224/73265 ,  H01L2225/0651 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06548 ,  H01L2225/06572 ,  H01L2225/06575 ,  H01L2924/00014 ,  H01L2924/01019 ,  H01L2924/12044 ,  H01L2924/14 ,  H05K7/20218 ,  H05K7/2039 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： An interposer is provided that suppresses heat conduction more effectively between two heat sources when the interposer is placed between the heat sources.An interposer 24 comprises a body having a cavity 23 maintained in vacuum; insulating layers 22a and 22b formed respectively on upper and lower walls 20a and 20b of the body; and heat reflecting layers 21a and 21b formed respectively on the insulating layers 22a and 22b. The interposer 24 thermally insulates semiconductor devices 11a and 21a mounted respectively on upper and lower sides of the interposer 24.

摘要翻译： 提供了一种插入器，当插入器位于热源之间时，可以更有效地抑制两个热源之间的热传导。 插入器24包括具有保持在真空中的空腔23的本体; 绝缘层22a和22b分别形成在主体的上壁20a和下壁20b上; 以及分别形成在绝缘层22a和22b上的热反射层21a和21b。 插入器24使分别安装在插入件24的上侧和下侧上的半导体器件11a和21a热绝缘。

公开(公告)号：US06188127B1

公开(公告)日：2001-02-13

申请号：US08604115

申请日：1996-02-20

申请人： Naoji Senba ,  Yuzo Shimada ,  Kazuaki Utsumi ,  Kenichi Tokuno ,  Ikushi Morizaki ,  Akihiro Dohya ,  Manabu Bonkohara

发明人： Naoji Senba ,  Yuzo Shimada ,  Kazuaki Utsumi ,  Kenichi Tokuno ,  Ikushi Morizaki ,  Akihiro Dohya ,  Manabu Bonkohara

IPC分类号： H01L2302

CPC分类号： H01L24/28 ,  H01L21/563 ,  H01L25/105 ,  H01L2224/16225 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2224/83102 ,  H01L2224/92125 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2225/1094 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15192 ,  H01L2924/15311 ,  H01L2924/1532 ,  H01L2924/15321 ,  H01L2924/15331 ,  H01L2924/15787 ,  H01L2924/1627 ,  H01L2924/181 ,  H01L2924/18161 ,  H01L2924/19041 ,  H01L2924/3011 ,  H01L2924/3511 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/0665 ,  H01L2924/00012

摘要： In a semiconductor package stack module, an LSI (Large Scale Integrated circuit) is mounted, via fine bumps, on a ceramic carrier substrate or a flexible carrier film on which wiring conductors are formed. After a seal resin has been injected, the chip is thinned by, e.g., grinding. A plurality of such carrier substrates or carrier films are connected to each other by bumps via through holes which are electrically connected to the wiring conductors, thereby completing a tridimensional stack module. The module achieves a miniature, thin, dense, low cost, and reliable structure without resorting to a wire bonding system or a TAB (Tape Automated Bonding) system. In addition, the module has a minimum of wiring length and a desirable electric characteristic.

摘要翻译： 在半导体封装堆叠模块中，通过微小的凸块将LSI（大规模集成电路）安装在陶瓷载体基板或形成布线导体的柔性载体膜上。 在注入密封树脂之后，通过例如研磨使芯片变薄。 多个这样的载体基板或载体膜通过与导线导电连接的通孔而由凸块彼此连接，从而完成三维叠层模块。 该模块实现了微型，薄型，致密，低成本和可靠的结构，而不需要使用引线接合系统或TAB（磁带自动接合）系统。 此外，该模块具有最小的布线长度和期望的电特性。

公开(公告)号：US5686763A

公开(公告)日：1997-11-11

申请号：US534940

申请日：1995-09-28

申请人： Kenichi Tokuno ,  Manabu Bonkohara

发明人： Kenichi Tokuno ,  Manabu Bonkohara

IPC分类号： H01L23/28 ,  H01L21/56 ,  H01L21/60 ,  H01L23/12 ,  H01L23/498 ,  H01L23/31

CPC分类号： H01L24/28 ,  H01L21/563 ,  H01L23/49838 ,  H01L2224/16225 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2224/83102 ,  H01L2224/92125 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01079 ,  H01L2924/14

摘要： A device module with a circuit chip and a print-circuit substrate on which a pattern of grooves is formed by selective etching. A liquid sealing material is in the space between the circuit chip and the surface of the substrate, fixing the circuit chip on the surface of the substrate. The circuit chip has a plurality of electrodes arranged in a first pattern, and the substrate has a plurality of connection terminals arranged in the first pattern within a chip mounting area on a surface thereof. Each of the grooves passes between two adjacent connection terminals through the chip mounting area, and both ends of each groove protrudes from the periphery of the chip mounting area. After the circuit chip is placed on the chip mounting area with the respective electrodes corresponding to the connection terminals, a liquid sealing material may be spread more easily into the space between the circuit chip and the substrate by the use of capillary action to provide a more reliable and efficient seal.

摘要翻译： 具有电路芯片和印刷电路基板的器件模块，通过选择性蚀刻在其上形成凹槽图案。 液体密封材料位于电路芯片和基板表面之间的空间中，将电路芯片固定在基板的表面上。 电路芯片具有以第一图案布置的多个电极，并且基板在其表面上的芯片安装区域内具有以第一图案布置的多个连接端子。 每个槽通过芯片安装区域在两个相邻的连接端子之间通过，并且每个槽的两端从芯片安装区域的周边突出。 在将电路芯片放置在具有对应于连接端子的相应电极的芯片安装区域之后，通过使用毛细管作用，液体密封材料可以更容易地扩散到电路芯片和基板之间的空间中，以提供更多 可靠高效的密封。

公开(公告)号：US4763409A

公开(公告)日：1988-08-16

申请号：US899896

申请日：1986-08-25

申请人： Kouichi Takekawa ,  Manabu Bonkohara

发明人： Kouichi Takekawa ,  Manabu Bonkohara

IPC分类号： H01L21/48 ,  H01L23/495 ,  H01L23/58 ,  H01R43/00

CPC分类号： H01L24/50 ,  H01L21/4839 ,  H01L22/32 ,  H01L23/49572 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  Y10T29/49121

摘要： A method of manufacturing a semiconductor device employing a film carrier tape during process steps thereof is disclosed. Any test pad is not provided in the film carrier tape. Therefore, the semiconductor element carried in the film is cut at the leads and separated from the film carrier tape without conducting any electrical test. The separated semiconductor element is conducted the electrical test by installing it on a testing substrate which is provided to adapt to a large number of terminals.

摘要翻译： 公开了一种在其工艺步骤中制造使用薄膜载带的半导体器件的方法。 胶片载带中没有设置任何测试垫。 因此，载带在膜中的半导体元件在引线处被切割并与膜载带分离，而不进行任何电测试。 分离的半导体元件通过将其安装在被提供以适应大量端子的测试基板上进行电气测试。