Semiconductor device and method of fabricating the same
    6.
    发明授权
    Semiconductor device and method of fabricating the same 失效
    半导体装置及其制造方法

    公开(公告)号:US5793117A

    公开(公告)日:1998-08-11

    申请号:US684617

    申请日:1996-07-22

    摘要: The invention provides a semiconductor device including a semiconductor substrate formed thereon with at least one recessed portion, an electrically conductive layer covering at least a surface of the recessed portion therewith, and a ball-bump formed on the electrically conductive layer within the recessed portion. The semiconductor device can act as a probe card by additionally having a tester device formed in the semiconductor substrate and provided with a function of testing electrical performances of a semiconductor device. Since the recessed portion can be formed by lithography technique, it is possible to arrange the greater number of pins in a smaller pitch, and in addition, it is also possible to locate ball-bumps in place with higher accuracy than a conventional semiconductor device.

    摘要翻译: 本发明提供了一种半导体器件,其包括在其上形成有至少一个凹部的半导体衬底,至少覆盖其凹部的表面的导电层,以及形成在凹部内的导电层上的球凸点。 半导体器件可以通过另外具有形成在半导体衬底中的测试器器件并且具有测试半导体器件的电性能的功能而用作探针卡。 由于可以通过光刻技术形成凹部,因此可以以更小的间距布置更多数量的销,另外也可以比现有的半导体装置更高精度地定位球形凸块。

    Multistage coupling semiconductor carrier, semiconductor device using the semiconductor carrier
    8.
    发明授权
    Multistage coupling semiconductor carrier, semiconductor device using the semiconductor carrier 失效
    多级耦合半导体载体,使用半导体载体的半导体器件

    公开(公告)号:US06194787B1

    公开(公告)日:2001-02-27

    申请号:US08833159

    申请日:1997-04-04

    IPC分类号: H01L2348

    摘要: The present invention adopts a circuit pattern in which in a carrier of a package for coupling semiconductor devices at multistage, drawing out lines for selecting individual semiconductor devices are coupled in parallel. Thus, the present invention achieves the multistage coupling semiconductor device which can be completed with a circuit pattern of one kind regardless of the number of stages of a multistage. Using the carrier having the foregoing structure, the semiconductor device is assembled and is subjected to characteristic inspections. Thereafter, the circuit patterns, coupled in parallel, having good electrical characteristics are partially cut by either laser, sand-blast, or etching. The products can be specified according to the circuit pattern which is cut.

    摘要翻译: 本发明采用电路图案,其中在用于多级耦合半导体器件的封装的载体中,并联耦合用于选择各个半导体器件的线。 因此,本发明实现了可以用一种电路图案完成的多级耦合半导体器件,而不管多级的级数如何。 使用具有上述结构的载体,组装半导体器件并进行特性检查。 此后,具有良好电特性的并联耦合的电路图案被激光,喷砂或蚀刻部分切割。 产品可以根据切割的电路图案来指定。