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公开(公告)号：US09437574B2
公开(公告)日：2016-09-06
申请号：US14042662
申请日：2013-09-30
申请人： Tu-Anh N. Tran , Chu-Chung Lee
发明人： Tu-Anh N. Tran , Chu-Chung Lee
CPC分类号： H01L24/85 , H01L24/03 , H01L24/05 , H01L24/45 , H01L24/48 , H01L24/78 , H01L2224/04042 , H01L2224/05017 , H01L2224/05085 , H01L2224/05558 , H01L2224/05624 , H01L2224/45147 , H01L2224/45565 , H01L2224/45572 , H01L2224/45644 , H01L2224/45664 , H01L2224/48453 , H01L2224/48463 , H01L2224/48507 , H01L2224/48824 , H01L2224/78301 , H01L2224/85181 , H01L2224/85207 , H01L2224/8581 , H01L2924/10253 , H01L2924/10271 , H01L2924/10329 , Y10T29/49124 , H01L2924/01004 , H01L2924/0102 , H01L2924/01046 , H01L2924/01047 , H01L2924/01026 , H01L2924/01028 , H01L2924/01012 , H01L2924/01016 , H01L2924/00014 , H01L2924/00
摘要： An electronic component package includes a substrate and dielectric structure. The dielectric structure includes a top surface having a protrusion portion and a lower portion. The protrusion portion is located at first height that is greater than a second height of the lower portion. A conductive bond pad is located over the dielectric structure. A ball bond electrically couples the bond pad and a bond wire. An intermetallic compound located between the ball bond and bond pad is formed of material of the ball bond and bond pad and electrically couples the bond pad to the ball bond. A portion of the bond pad is vertically located between a portion of the lower portion of the top surface of the dielectric structure and the intermetallic compound. No portion of the bond pad is vertically located between at least a portion of the protrusion portion and the intermetallic compound.
摘要翻译： 电子部件封装包括基板和电介质结构。 电介质结构包括具有突出部分和下部分的顶表面。 突出部位于大于下部的第二高度的第一高度。 导电接合焊盘位于电介质结构之上。 球接合电耦合接合焊盘和接合线。 位于球焊接和焊盘之间的金属间化合物由球焊和焊盘的材料形成，并将焊接焊盘电连接到球焊上。 接合焊盘的一部分垂直地位于电介质结构的顶表面的下部的一部分和金属间化合物之间。 接合焊盘的没有部分垂直地位于突出部分的至少一部分和金属间化合物之间。
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公开(公告)号：US09324675B2
公开(公告)日：2016-04-26
申请号：US14262381
申请日：2014-04-25
CPC分类号： H01L24/49 , H01L24/05 , H01L24/43 , H01L24/45 , H01L24/48 , H01L24/85 , H01L2224/05554 , H01L2224/05624 , H01L2224/431 , H01L2224/432 , H01L2224/45124 , H01L2224/45139 , H01L2224/45144 , H01L2224/45147 , H01L2224/45565 , H01L2224/45644 , H01L2224/45664 , H01L2224/45687 , H01L2224/4569 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/4845 , H01L2224/48451 , H01L2224/48456 , H01L2224/48463 , H01L2224/4847 , H01L2224/49171 , H01L2224/78301 , H01L2224/85045 , H01L2224/85439 , H01L2224/85444 , H01L2224/85931 , H01L2224/85939 , H01L2224/85947 , H01L2924/00014 , H01L2924/10161 , H01L2924/15311 , H01L2924/181 , H01L2924/013 , H01L2924/01047 , H01L2924/01024 , H01L2924/01029 , H01L2924/01079 , H01L2924/01013 , H01L2924/01014 , H01L2924/00013 , H01L2924/00012 , H01L2224/45015 , H01L2924/207
摘要： A semiconductor structure includes a bond pad and a wire bond coupled to the bond pad. The wire bond includes a bond in contact with the bond pad. The wire bond includes a coating on a surface of the wire bond, and a first exposed portion of the wire bond in a selected location. The wire bond is devoid of the coating over the selected location of the wire bond, and an area of the first exposed portion is at least one square micron.
摘要翻译： 半导体结构包括接合焊盘和耦合到接合焊盘的引线键合。 引线键合包括与接合焊盘接触的键。 引线接合包括在引线键合的表面上的涂层，以及在选定位置的引线键合的第一暴露部分。 引线接合在引线键合的选定位置上没有涂层，并且第一暴露部分的面积为至少一平方微米。
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3.发明申请INTEGRATED CIRCUIT HAVING PADS AND INPUT/OUTPUT (I/O) CELLS 审中-公开具有PADS和INPUT / OUTPUT（I / O）电池的集成电路公开(公告)号：US20070267748A1
公开(公告)日：2007-11-22
申请号：US11383656
申请日：2006-05-16
申请人： Tu-Anh N. Tran , Nhat D. Vo , Burton J. Carpenter , Dae Y. Hong , James W. Miller , Kendall D. Phillips
发明人： Tu-Anh N. Tran , Nhat D. Vo , Burton J. Carpenter , Dae Y. Hong , James W. Miller , Kendall D. Phillips
CPC分类号： H01L24/06 , H01L24/05 , H01L2224/05093 , H01L2224/05552 , H01L2224/05553 , H01L2224/05554 , H01L2224/05624 , H01L2224/05644 , H01L2224/05647 , H01L2224/06051 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01029 , H01L2924/01033 , H01L2924/01073 , H01L2924/01076 , H01L2924/01079 , H01L2924/01082 , H01L2924/14 , H01L2924/00014 , H01L2924/00012
摘要： A pad (20) is electrically connected to a first I/O cell (14) while also physically overlying active circuitry of a second I/O cell (16). Note that although the pad (20) overlies the second I/O cell (16), the pad (20) is not electrically connected to the I/O cell (16). Such a pattern may be replicated in any desired manner so that the I/O cells (e.g. 300-310) may have a finer pitch than the corresponding pads (320-324 and 330-335). In addition, the size of the pads may be increased (e.g. pad 131 may be bigger than pad 130) while the width “c” of the I/O cells (132-135) does not have to be increased. Such a pattern (e.g. 500) may be arranged so that the area required in one or more dimensions may be minimized.
摘要翻译： 垫（20）电连接到第一I / O单元（14），同时物理地覆盖第二I / O单元（16）的有源电路。 注意，虽然焊盘（20）覆盖第二I / O单元（16），但是焊盘（20）不与I / O单元（16）电连接。 这样的图案可以以任何期望的方式复制，使得I / O单元（例如300-310）可以具有比对应的垫（320-324和330-335）更细的间距。 此外，可以不增加I / O单元（132-135）的宽度“c”，可以增加焊盘的尺寸（例如焊盘131可能大于焊盘130）。 这种图案（例如500）可以被布置成使得在一个或多个维度中所需的区域可以被最小化。
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4.发明授权Aluminum clad copper structure of an electronic component package and a method of making an electronic component package with an aluminum clad copper structure 有权一种电子元件封装的铝包铜结构体及一种制造具有铝包铜结构的电子元器件封装的方法公开(公告)号：US09437459B2
公开(公告)日：2016-09-06
申请号：US14267378
申请日：2014-05-01
IPC分类号： H01L21/48 , H01L21/56 , H01L23/498 , H01L23/31
CPC分类号： H01L21/4853 , H01L21/563 , H01L23/3128 , H01L23/49811 , H01L23/49816 , H01L23/49827 , H01L23/49866 , H01L2224/45124 , H01L2224/45139 , H01L2224/45147 , H01L2224/45565 , H01L2224/45664 , H01L2224/48091 , H01L2224/48228 , H01L2224/48465 , H01L2924/15311 , H01L2924/181 , H01L2924/00014 , H01L2924/00012 , H01L2924/00
摘要： An electronic component package that includes a package substrate having an aluminum bond pad formed from an aluminum clad copper structure. The aluminum clad copper structure is attached to a dielectric layer. An electronic component is attached to the substrate and includes a conductive structure electrically coupled to the aluminum bond pad. The aluminum bond pad, the electronic component, and at least a portion of the substrate are encapsulated with an encapsulant.
摘要翻译： 一种电子部件封装，其包括具有由铝包铜结构形成的铝接合焊盘的封装基板。 铝包铜结构附着在电介质层上。 电子部件附接到基板并且包括电耦合到铝接合焊盘的导电结构。 铝合金焊盘，电子部件以及基板的至少一部分用密封剂封装。
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公开(公告)号：US20150303169A1
公开(公告)日：2015-10-22
申请号：US14255450
申请日：2014-04-17
IPC分类号： H01L23/00
CPC分类号： H01L24/85 , H01L24/05 , H01L24/45 , H01L24/48 , H01L2224/05624 , H01L2224/05644 , H01L2224/45124 , H01L2224/45139 , H01L2224/45144 , H01L2224/45147 , H01L2224/48139 , H01L2224/48227 , H01L2224/48247 , H01L2224/48451 , H01L2224/48464 , H01L2224/48465 , H01L2224/48507 , H01L2224/78268 , H01L2224/78301 , H01L2224/78303 , H01L2224/85045 , H01L2224/85181 , H01L2224/85444 , H01L2224/85801 , H01L2924/00014 , H01L2924/15747 , H01L2224/45015 , H01L2924/207 , H01L2924/00
摘要： A method for forming a semiconductor device includes forming a first ball bond on a first contact pad, in which the first ball bond has a first wire segment of a bonding wire extending from the ball bond; forming a mid-span ball in the first wire segment at a first distance from the ball bond; and after the forming the mid-span ball, attaching the mid-span ball to a second contact pad to form a second ball bond.
摘要翻译： 一种形成半导体器件的方法包括在第一接触焊盘上形成第一球焊，其中第一球焊接具有从球焊接延伸的接合线的第一线段; 在距离球接头的第一距离处在第一线段中形成中跨球; 并且在形成中跨球之后，将中跨球附接到第二接触垫以形成第二球接合。
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公开(公告)号：US20150194395A1
公开(公告)日：2015-07-09
申请号：US14147234
申请日：2014-01-03
申请人： Sohrab Safai , David B. Clegg , Tu-Anh N. Tran
发明人： Sohrab Safai , David B. Clegg , Tu-Anh N. Tran
IPC分类号： H01L23/00
CPC分类号： H01L24/03 , H01L24/05 , H01L24/08 , H01L24/45 , H01L24/48 , H01L24/78 , H01L24/85 , H01L2224/02166 , H01L2224/03831 , H01L2224/05017 , H01L2224/05558 , H01L2224/05624 , H01L2224/45147 , H01L2224/48463 , H01L2224/78301 , H01L2224/85031 , H01L2224/85181 , H01L2224/85205 , H01L2224/85206 , H01L2924/01013 , H01L2924/01029 , H01L2924/15311 , H01L2924/00015 , H01L2924/00014 , H01L2924/00
摘要： A method includes forming a conductive bond pad over a conductive structure in a last metal layer of an integrated circuit. A trench is etched around at least a portion of a perimeter of a wire bond region of the conductive bond pad. A portion of the conductive bond pad remains at the bottom of the trench to retain a conductive path between the wire bond pad region and the integrated circuit. The trench is positioned and sized to contain at least a portion of a splash of the conductive bond pad when a wire bond is subsequently formed in the wire bond region.
摘要翻译： 一种方法包括在集成电路的最后金属层中的导电结构上形成导电接合焊盘。 围绕导电接合焊盘的引线键合区域的周边的至少一部分蚀刻沟槽。 导电接合焊盘的一部分保留在沟槽的底部，以在引线接合焊盘区域和集成电路之间保持导电路径。 当在引线接合区域中随后形成引线接合时，沟槽被定位和定尺寸成包含导电接合焊盘的飞溅的至少一部分。
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公开(公告)号：US20150090480A1
公开(公告)日：2015-04-02
申请号：US14042662
申请日：2013-09-30
申请人： TU-ANH N. TRAN , Chu-Chung Lee
发明人： TU-ANH N. TRAN , Chu-Chung Lee
CPC分类号： H01L24/85 , H01L24/03 , H01L24/05 , H01L24/45 , H01L24/48 , H01L24/78 , H01L2224/04042 , H01L2224/05017 , H01L2224/05085 , H01L2224/05558 , H01L2224/05624 , H01L2224/45147 , H01L2224/45565 , H01L2224/45572 , H01L2224/45644 , H01L2224/45664 , H01L2224/48453 , H01L2224/48463 , H01L2224/48507 , H01L2224/48824 , H01L2224/78301 , H01L2224/85181 , H01L2224/85207 , H01L2224/8581 , H01L2924/10253 , H01L2924/10271 , H01L2924/10329 , Y10T29/49124 , H01L2924/01004 , H01L2924/0102 , H01L2924/01046 , H01L2924/01047 , H01L2924/01026 , H01L2924/01028 , H01L2924/01012 , H01L2924/01016 , H01L2924/00014 , H01L2924/00
摘要： An electronic component package includes a substrate and dielectric structure. The dielectric structure includes a top surface having a protrusion portion and a lower portion. The protrusion portion is located at first height that is greater than a second height of the lower portion. A conductive bond pad is located over the dielectric structure. A ball bond electrically couples the bond pad and a bond wire. An intermetallic compound located between the ball bond and bond pad is formed of material of the ball bond and bond pad and electrically couples the bond pad to the ball bond. A portion of the bond pad is vertically located between a portion of the lower portion of the top surface of the dielectric structure and the intermetallic compound. No portion of the bond pad is vertically located between at least a portion of the protrusion portion and the intermetallic compound.
摘要翻译： 电子部件封装包括基板和电介质结构。 电介质结构包括具有突出部分和下部分的顶表面。 突出部位于大于下部的第二高度的第一高度。 导电接合焊盘位于电介质结构之上。 球接合电耦合接合焊盘和接合线。 位于球焊接和焊盘之间的金属间化合物由球焊和焊盘的材料形成，并将焊接焊盘电连接到球焊上。 接合焊盘的一部分垂直地位于电介质结构的顶表面的下部的一部分和金属间化合物之间。 接合焊盘的没有部分垂直地位于突出部分的至少一部分和金属间化合物之间。
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公开(公告)号：US20130221076A1
公开(公告)日：2013-08-29
申请号：US13404945
申请日：2012-02-24
CPC分类号： H01L23/5389 , H01L23/49822 , H01L23/49827 , H01L24/29 , H01L24/32 , H01L24/48 , H01L24/83 , H01L24/85 , H01L2224/2929 , H01L2224/29339 , H01L2224/48091 , H01L2224/48227 , H01L2224/73265 , H01L2224/83101 , H01L2224/92247 , H01L2924/00014 , H01L2924/1461 , H01L2924/15153 , H01L2924/1517 , H01L2924/15311 , H01L2924/181 , H05K1/183 , H05K3/284 , H05K3/4602 , H05K2203/049 , H05K2203/063 , Y10T29/4913 , H01L2224/45099 , H01L2924/0665 , H01L2924/00 , H01L2924/00012
摘要： Forming an embedded electronic component includes attaching an electronic component to a first conductive layer and forming a layer stack with a first partially cured dielectric layer having a first opening and a substrate having a second opening. The partially cured dielectric layer is located over the first conductive layer and the substrate is located over the first partially cured dielectric layer such that the first and second openings surround the electronic component. Heat and pressure are applied to the layer stack such that the first partially cured dielectric layer flows for filling gaps within the first and second openings and becomes fully cured.
摘要翻译： 形成嵌入式电子部件包括将电子部件附接到第一导电层并且形成具有第一部分固化的具有第一开口的介电层和具有第二开口的基板的层堆叠。 部分固化的介电层位于第一导电层之上，并且衬底位于第一部分固化的电介质层之上，使得第一和第二开口围绕电子部件。 将热和压力施加到层堆叠，使得第一部分固化的电介质层流动以填充第一和第二开口内的间隙，并且完全固化。
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公开(公告)号：US20120025401A1
公开(公告)日：2012-02-02
申请号：US12844922
申请日：2010-07-28
申请人： CHU-CHUNG LEE , Kian Leong Chin , Kevin J. Hess , Patrick Johnston , Tu-Anh N. Tran , Heng Keong Yip
发明人： CHU-CHUNG LEE , Kian Leong Chin , Kevin J. Hess , Patrick Johnston , Tu-Anh N. Tran , Heng Keong Yip
IPC分类号： H01L23/488 , H01L21/768
CPC分类号： H01L24/81 , H01L21/56 , H01L23/62 , H01L24/11 , H01L24/16 , H01L24/32 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/85 , H01L2224/0401 , H01L2224/04042 , H01L2224/05553 , H01L2224/16225 , H01L2224/32225 , H01L2224/32245 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/48464 , H01L2224/4911 , H01L2224/49171 , H01L2224/49175 , H01L2224/73265 , H01L2224/85203 , H01L2224/85205 , H01L2924/01079 , H01L2924/14 , H01L2924/15311 , H01L2924/181 , H01L2924/19043 , H01L2924/19104 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： An integrated circuit package includes a semiconductor die attached to a package support. The die has a plurality of peripheral bond pads along a periphery of the die and a first bond pad on an interior portion of the die wherein the first bond pad is a power supply bond pad. A conductive distributor is over the die and within a perimeter of the die and has a first opening. The plurality of bond pads are located between the perimeter of the die and a perimeter of the conductive distributor. The first bond pad is in the first opening. A first bond wire is connected between the first bond pad and the conductive distributor. A second bond wire is connected between a first peripheral bond pad of the plurality of peripheral bond pads and the conductive distributor.
摘要翻译： 集成电路封装包括附接到封装支撑件的半导体管芯。 所述管芯具有沿所述管芯的周边的多个外围接合焊盘和所述管芯的内部部分上的第一接合焊盘，其中所述第一接合焊盘是电源接合焊盘。 导电分布器在模具之上并且在模具的周边内并且具有第一开口。 多个接合焊盘位于模具的周边和导电分配器的周边之间。 第一个焊盘在第一个开口。 第一接合线连接在第一接合焊盘和导电分布器之间。 第二接合线连接在多个外围接合焊盘的第一外围接合焊盘和导电分布器之间。
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公开(公告)号：US09515034B2
公开(公告)日：2016-12-06
申请号：US14147238
申请日：2014-01-03
申请人： Sohrab Safai , David B. Clegg , Tu-Anh N. Tran
发明人： Sohrab Safai , David B. Clegg , Tu-Anh N. Tran
IPC分类号： H01L23/00 , H01L23/485 , B23K20/00
CPC分类号： H01L24/03 , B23K20/004 , B23K20/005 , B23K20/007 , H01L23/485 , H01L24/05 , H01L24/08 , H01L24/43 , H01L24/45 , H01L24/48 , H01L24/78 , H01L24/85 , H01L2224/02166 , H01L2224/03831 , H01L2224/04042 , H01L2224/05017 , H01L2224/05558 , H01L2224/05624 , H01L2224/08059 , H01L2224/43 , H01L2224/45147 , H01L2224/48 , H01L2224/48463 , H01L2224/78301 , H01L2224/85045 , H01L2224/85181 , H01L2224/85205 , H01L2224/85206 , H01L2924/01013 , H01L2924/14 , H01L2924/00015 , H01L2924/00014 , H01L2924/00
摘要： A conductive structure is formed in a last metal layer of an integrated circuit. Passivation material is patterned over a portion of the conductive structure. A first trench is patterned around a selected portion of the passivation material. The selected portion represents a bond region of a wire bond to be formed above the passivation material. A portion of the passivation material completely covers a bottom of the trench. A layer of conductive material is conformally deposited over the passivation material. The conformal depositing resulting in a second trench forming in the conductive material over the first trench in the passivation material. The second trench is positioned to contain at least a portion of a splash of the conductive material when the wire bond is subsequently formed.
摘要翻译： 导电结构形成在集成电路的最后金属层中。 钝化材料在导电结构的一部分上被图案化。 在钝化材料的选定部分周围形成第一沟槽。 所选择的部分表示将形成在钝化材料上方的引线键合的键合区域。 钝化材料的一部分完全覆盖沟槽的底部。 一层导电材料共形沉积在钝化材料上。 保形沉积导致在钝化材料中的第一沟槽上形成在导电材料中的第二沟槽。 当随后形成引线接合时，第二沟槽定位成容纳至少一部分导电材料的溅射。
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