公开(公告)号：US20110187002A1

公开(公告)日：2011-08-04

申请号：US13019509

申请日：2011-02-02

申请人： Sadahiro Kishii ,  Tsuyoshi Kanki ,  Yoshihiro Nakata ,  Yasushi Kobayashi ,  Masato Tanaka ,  Akio Rokugawa

发明人： Sadahiro Kishii ,  Tsuyoshi Kanki ,  Yoshihiro Nakata ,  Yasushi Kobayashi ,  Masato Tanaka ,  Akio Rokugawa

IPC分类号： H01L23/28 ,  H01L21/56

CPC分类号： H01L23/488 ,  H01L24/18 ,  H01L24/19 ,  H01L24/97 ,  H01L2224/04105 ,  H01L2224/24137 ,  H01L2224/32225 ,  H01L2224/73267 ,  H01L2224/92244 ,  H01L2224/94 ,  H01L2224/97 ,  H01L2924/14 ,  H01L2924/15153 ,  H01L2924/15787 ,  H01L2924/15788 ,  H01L2224/82 ,  H01L2224/83 ,  H01L2924/00 ,  H01L2224/03

摘要： A support substrate includes a first surface and a second surface located above the level of the first surface. Chips are mounted on the first surface. A first insulating film is disposed over each chip. First conductive plugs are connected to the chip extending through each first insulating film. Filler material made of resin filling a space between chips. Wirings are disposed over the first insulating film and the filler material for interconnecting different chips. The second surface, an upper surface of the first insulating film and an upper surface of the filler material are located at the same level.

摘要翻译： 支撑基板包括位于第一表面的高度之上的第一表面和第二表面。 芯片安装在第一个表面上。 第一绝缘膜设置在每个芯片上。 第一导电插头连接到延伸穿过每个第一绝缘膜的芯片。 由树脂填充的填充材料填充芯片之间的空间。 布线布置在第一绝缘膜和用于互连不同芯片的填充材料之上。 第二表面，第一绝缘膜的上表面和填充材料的上表面位于同一水平。

公开(公告)号：US20120181070A1

公开(公告)日：2012-07-19

申请号：US13431127

申请日：2012-03-27

申请人： Tsuyoshi Kanki ,  Yoshihiro Nakata ,  Yasushi Kobayashi

发明人： Tsuyoshi Kanki ,  Yoshihiro Nakata ,  Yasushi Kobayashi

IPC分类号： H05K1/09 ,  B05D3/00 ,  B05D5/12

CPC分类号： H01L21/76877 ,  H01L21/02068 ,  H01L21/02071 ,  H01L21/02074 ,  H01L21/288 ,  H01L21/321 ,  H01L21/76834 ,  H01L21/76841 ,  H01L21/76852 ,  H01L21/76874 ,  H01L21/76883 ,  H01L21/76885 ,  H01L23/53238 ,  H01L2924/00 ,  H01L2924/0002 ,  H05K3/24

摘要： After a copper interconnection is formed above a substrate, a surface of the copper interconnection is activated by performing acid cleaning. Thereafter, the substrate is immersed in a BTA (Benzo triazole) aqueous solution to form a protection film covering the surface of the copper interconnection. At this time, Cu—N—R bonds (R is an organic group) are formed in grain boundary portions in the surface of the copper interconnection. Thereafter, the protection film is removed by performing alkaline cleaning. The Cu—N—R bonds remain in the grain boundary portions in the surface of the copper interconnection even after the protection film is removed. Subsequently, the surface of the copper interconnection is subjected to an activation process, and a barrier layer is formed thereafter by electroless-plating the surface of the copper interconnection with NiP or CoWP.

摘要翻译： 在基板上形成铜互连之后，通过进行酸清洗来激活铜互连的表面。 此后，将基板浸入BTA（苯并三唑）水溶液中以形成覆盖铜互连表面的保护膜。 此时，在铜互连表面的晶界部分中形成Cu-N-R键（R为有机基团）。 此后，通过进行碱性清洗除去保护膜。 即使在保护膜被去除之后，Cu-N-R键也保留在铜互连表面的晶界部分中。 随后，对铜互连的表面进行激活处理，然后通过用NiP或CoWP对铜互连的表面进行无电镀来形成阻挡层。

公开(公告)号：US08399295B2

公开(公告)日：2013-03-19

申请号：US13019509

申请日：2011-02-02

申请人： Sadahiro Kishii ,  Tsuyoshi Kanki ,  Yoshihiro Nakata ,  Yasushi Kobayashi ,  Masato Tanaka ,  Akio Rokugawa

发明人： Sadahiro Kishii ,  Tsuyoshi Kanki ,  Yoshihiro Nakata ,  Yasushi Kobayashi ,  Masato Tanaka ,  Akio Rokugawa

IPC分类号： H01L23/28 ,  H01L21/56

CPC分类号： H01L23/488 ,  H01L24/18 ,  H01L24/19 ,  H01L24/97 ,  H01L2224/04105 ,  H01L2224/24137 ,  H01L2224/32225 ,  H01L2224/73267 ,  H01L2224/92244 ,  H01L2224/94 ,  H01L2224/97 ,  H01L2924/14 ,  H01L2924/15153 ,  H01L2924/15787 ,  H01L2924/15788 ,  H01L2224/82 ,  H01L2224/83 ,  H01L2924/00 ,  H01L2224/03

摘要： A support substrate includes a first surface and a second surface located above the level of the first surface. Chips are mounted on the first surface. A first insulating film is disposed over each chip. First conductive plugs are connected to the chip extending through each first insulating film. Filler material made of resin filling a space between chips. Wirings are disposed over the first insulating film and the filler material for interconnecting different chips. The second surface, an upper surface of the first insulating film and an upper surface of the filler material are located at the same level.

摘要翻译： 支撑基板包括位于第一表面的高度之上的第一表面和第二表面。 芯片安装在第一个表面上。 第一绝缘膜设置在每个芯片上。 第一导电插头连接到延伸穿过每个第一绝缘膜的芯片。 由树脂填充的填充材料填充芯片之间的空间。 布线布置在第一绝缘膜和用于互连不同芯片的填充材料之上。 第二表面，第一绝缘膜的上表面和填充材料的上表面位于同一水平。

公开(公告)号：US08431464B2

公开(公告)日：2013-04-30

申请号：US12700215

申请日：2010-02-04

申请人： Yasushi Kobayashi ,  Kouta Yoshikawa ,  Yoshihiro Nakata ,  Tadahiro Imada ,  Shirou Ozaki

发明人： Yasushi Kobayashi ,  Kouta Yoshikawa ,  Yoshihiro Nakata ,  Tadahiro Imada ,  Shirou Ozaki

IPC分类号： H01L21/76

CPC分类号： H01L23/53295 ,  C08G77/20 ,  C09D183/04 ,  H01L21/02123 ,  H01L21/02216 ,  H01L21/02222 ,  H01L21/02282 ,  H01L21/02348 ,  H01L21/31144 ,  H01L21/3121 ,  H01L21/3125 ,  H01L21/3212 ,  H01L21/76807 ,  H01L21/76829 ,  H01L23/53238 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

摘要： A silicic coating of 2.4 g/cm3 or higher density, obtained by forming a silicic coating precursor with the use of at least one type of silane compound having a photosensitive functional group and thereafter irradiating the silicic coating precursor with at least one type of light. This silicic coating can be used as a novel barrier film or stopper film for semiconductor device.

摘要翻译： 通过使用至少一种具有光敏官能团的硅烷化合物形成硅涂层前体，然后用至少一种类型的光照射硅涂层前体，得到2.4g / cm 3或更高密度的硅质涂层。 这种硅涂层可用作半导体器件的新型阻挡膜或阻挡膜。

公开(公告)号：US08716209B2

公开(公告)日：2014-05-06

申请号：US12560193

申请日：2009-09-15

申请人： Yasushi Kobayashi ,  Kouta Yoshikawa ,  Yoshihiro Nakata ,  Tadahiro Imada ,  Shirou Ozaki

发明人： Yasushi Kobayashi ,  Kouta Yoshikawa ,  Yoshihiro Nakata ,  Tadahiro Imada ,  Shirou Ozaki

IPC分类号： H01L21/306 ,  C11D11/00 ,  H01L21/3105

CPC分类号： C11D11/0047 ,  C11D3/042 ,  C11D3/044 ,  C11D3/162 ,  C11D3/2075 ,  C11D3/30 ,  C11D3/3742 ,  C11D7/08 ,  C11D7/265 ,  C11D7/3209 ,  H01L21/02063 ,  H01L21/3105 ,  H01L21/76807 ,  H01L21/76814 ,  H01L21/76826 ,  H01L24/05 ,  H01L2224/02166 ,  H01L2924/14 ,  H01L2924/00

摘要： The invention provides an agent for post-etch treating a silicon dielectric film, including: at least one nitrogen-containing substance selected from the group consisting of ammonium bases and amine compounds; an acid; and at least one silicon-containing compound containing silicon, carbon and hydrogen. According to the present invention, it becomes possible to suppress an increase in the dielectric constant of a silicon dielectric film caused by etching.

摘要翻译： 本发明提供了一种用于蚀刻后处理硅介电膜的试剂，包括：至少一种选自铵基和胺化合物的含氮物质; 酸; 和含有硅，碳和氢的至少一种含硅化合物。 根据本发明，可以抑制由蚀刻引起的硅电介质膜的介电常数的增加。

公开(公告)号：US08580907B2

公开(公告)日：2013-11-12

申请号：US12648804

申请日：2009-12-29

申请人： Yasushi Kobayashi ,  Yoshihiro Nakata ,  Shirou Ozaki

发明人： Yasushi Kobayashi ,  Yoshihiro Nakata ,  Shirou Ozaki

IPC分类号： C08G77/60

CPC分类号： H01L21/3121 ,  C08G77/60 ,  C09D183/16 ,  H01B3/46 ,  H01L21/02123 ,  H01L21/02211 ,  H01L21/02282 ,  H01L21/4857 ,  H01L21/76807 ,  H01L21/76829 ,  H01L24/02 ,  H01L24/03 ,  H01L24/11 ,  H01L2224/02319 ,  H01L2224/02333 ,  H01L2224/02381 ,  H01L2224/0401 ,  H01L2224/13111 ,  H01L2224/94 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01025 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01038 ,  H01L2924/0104 ,  H01L2924/01041 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/01051 ,  H01L2924/01052 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01076 ,  H01L2924/01077 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15787 ,  H05K3/4676 ,  H01L2224/11 ,  H01L2924/00014 ,  H01L2924/00

摘要： An insulating film material, which contains a polycarbosilane compound expressed by the following structural formula 1: where R1 may be the same or different to each other in the unit repeated “n” times, and each represents C1-4 hydrocarbon or aromatic hydrocarbon; R2 may be the same or different to each other in the unit repeated “n” times, and each represents C1-4 hydrocarbon or aromatic hydrocarbon; n is an integer of 5 to 5,000.

摘要翻译： 一种绝缘膜材料，其含有由以下结构式1表示的聚碳硅烷化合物：其中R 1可以在重复“n”次的单元中彼此相同或不同，并且各自表示C1-4烃或芳族烃; R2可以在重复“n”次的单位中彼此相同或不同，并且各自表示C1-4烃或芳香烃; n为5〜5000的整数。

公开(公告)号：US08390099B2

公开(公告)日：2013-03-05

申请号：US12862140

申请日：2010-08-24

申请人： Shirou Ozaki ,  Yoshihiro Nakata ,  Tadahiro Imada ,  Yasushi Kobayashi

发明人： Shirou Ozaki ,  Yoshihiro Nakata ,  Tadahiro Imada ,  Yasushi Kobayashi

IPC分类号： H01L23/58

CPC分类号： H01L23/5329 ,  H01L21/02167 ,  H01L21/022 ,  H01L21/02203 ,  H01L21/02304 ,  H01L21/02348 ,  H01L21/3121 ,  H01L21/76801 ,  H01L21/76807 ,  H01L21/76825 ,  H01L21/76829 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  Y10T428/31663 ,  H01L2924/00

摘要： An interconnection substrate including: a first insulating film made of a silicon compound, an adhesion enhancing layer formed on the first insulating film, and a second insulting film made of a silicon compound and formed on the adhesion enhancing layer, wherein the first insulating film and the second insulating film are combined together with a component having a structure represented by General Formula (1) described below: Si—CXHY—Si  General Formula (1) where y is equal to 2x and is an even integer.

摘要翻译： 一种互连基板，包括：由硅化合物制成的第一绝缘膜，形成在第一绝缘膜上的粘合增强层和形成在粘合增强层上的由硅化合物制成的第二绝缘膜，其中第一绝缘膜和 第二绝缘膜与具有下述通式（1）所示结构的成分组合在一起：Si-CXHY-Si通式（1），其中y等于2×并且是偶数整数。

公开(公告)号：US08461041B2

公开(公告)日：2013-06-11

申请号：US12955525

申请日：2010-11-29

申请人： Shirou Ozaki ,  Yoshihiro Nakata ,  Yasushi Kobayashi ,  Yuichi Minoura

发明人： Shirou Ozaki ,  Yoshihiro Nakata ,  Yasushi Kobayashi ,  Yuichi Minoura

IPC分类号： H01L21/4763

CPC分类号： H01L23/53238 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02282 ,  H01L21/3105 ,  H01L21/31695 ,  H01L21/76807 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76831 ,  H01L23/485 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： The method of manufacturing a semiconductor device includes forming an insulating film of a silicon compound-group insulation film; forming an opening in the insulation film, applying an active energy beam in an atmosphere containing hydrocarbon gas to form a barrier layer of a crystalline SiC, and forming an interconnection structure of copper in the opening with the barrier layer formed in.

摘要翻译： 制造半导体器件的方法包括：形成硅化合物基绝缘膜的绝缘膜; 在所述绝缘膜上形成开口，在含有烃气体的气氛中施加活性能量束，形成结晶SiC的阻挡层，并且在所述开口中形成所述阻挡层中的铜的互连结构。

公开(公告)号：US20110068471A1

公开(公告)日：2011-03-24

申请号：US12955525

申请日：2010-11-29

申请人： Shirou Ozaki ,  Yoshihiro Nakata ,  Yasushi Kobayashi ,  Yuichi Minoura

发明人： Shirou Ozaki ,  Yoshihiro Nakata ,  Yasushi Kobayashi ,  Yuichi Minoura

IPC分类号： H01L23/532 ,  H01L21/768

CPC分类号： H01L23/53238 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02282 ,  H01L21/3105 ,  H01L21/31695 ,  H01L21/76807 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76831 ,  H01L23/485 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： The method of manufacturing a semiconductor device includes forming an insulating film of a silicon compound-group insulation film; forming an opening in the insulation film, applying an active energy beam in an atmosphere containing hydrocarbon gas to form a barrier layer of a crystalline SiC, and forming an interconnection structure of copper in the opening with the barrier layer formed in.

摘要翻译： 制造半导体器件的方法包括：形成硅化合物基绝缘膜的绝缘膜; 在绝缘膜上形成开口，在含有烃气体的气氛中施加活性能量束，形成结晶SiC的阻挡层，并在形成有阻挡层的开口中形成铜的互连结构。

公开(公告)号：US07875981B2

公开(公告)日：2011-01-25

申请号：US12037439

申请日：2008-02-26

申请人： Yasushi Kobayashi ,  Yoshihiro Nakata ,  Shirou Ozaki

发明人： Yasushi Kobayashi ,  Yoshihiro Nakata ,  Shirou Ozaki

IPC分类号： H01L23/485

CPC分类号： H01L21/31695 ,  C09D183/04 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02208 ,  H01L21/02282 ,  H01L21/3122 ,  H01L21/76801 ,  H01L21/76807 ,  H01L21/76829 ,  H01L21/76834 ,  H01L2924/0002 ,  C08L2666/54 ,  H01L2924/00

摘要： To provide an insulating film material that can be advantageously used for forming an insulating film having a low dielectric constant and excellent resistance to damage, such as etching resistance and resistance to liquid reagents, a multilayer interconnection structure in which a parasitic capacitance between the interconnections can be reduced, efficient methods for manufacturing the multilayer interconnection structure, and an efficient method for manufacturing a semiconductor device with a high speed and reliability. The insulating film material contains at least a silicon compound having a steric structure represented by Structural Formula (1) below. where, R1, R2, R3, and R4 may be the same or different and at least one of them represents a functional group containing any of a hydrocarbon and an unsaturated hydrocarbon.

摘要翻译： 为了提供一种绝缘膜材料，其可以有利地用于形成具有低介电常数和优异的耐腐蚀性（如抗蚀刻性和耐液体试剂）的绝缘膜，其中互连之间的寄生电容可以 减少用于制造多层互连结构的有效方法，以及用于制造具有高速度和可靠性的半导体器件的有效方法。 绝缘膜材料至少含有具有由下述结构式（1）表示的空间结构的硅化合物。 其中，R 1，R 2，R 3和R 4可以相同或不同，并且它们中的至少一个表示含有任何烃和不饱和烃的官能团。