公开(公告)号：US08344490B2

公开(公告)日：2013-01-01

申请号：US12076033

申请日：2008-03-13

申请人： Yoshitaka Aiba ,  Tetsuya Fujisawa ,  Yoshiyuki Yonoda

发明人： Yoshitaka Aiba ,  Tetsuya Fujisawa ,  Yoshiyuki Yonoda

IPC分类号： H01L23/48

CPC分类号： H01L23/5226 ,  H01L23/3128 ,  H01L23/49816 ,  H01L23/49827 ,  H01L23/5384 ,  H01L23/552 ,  H01L23/66 ,  H01L24/48 ,  H01L24/73 ,  H01L25/18 ,  H01L2224/0401 ,  H01L2224/05001 ,  H01L2224/05008 ,  H01L2224/05022 ,  H01L2224/05023 ,  H01L2224/05548 ,  H01L2224/05568 ,  H01L2224/05647 ,  H01L2224/13021 ,  H01L2224/16225 ,  H01L2224/16235 ,  H01L2224/16238 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48235 ,  H01L2224/73253 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01019 ,  H01L2924/15174 ,  H01L2924/15184 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19105 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/3025 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/05099 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor device is disclosed that includes a support substrate, a first semiconductor element that is mounted on one side of the support substrate, a second semiconductor element including a high frequency electrode that is mounted on the one side of the support substrate, a via hole that is provided at the support substrate in relation to the high frequency electrode, and an external connection electrode that is provided on the other side of the support substrate in relation to the via hole.

摘要翻译： 公开了一种半导体器件，其包括支撑衬底，安装在支撑衬底的一侧的第一半导体元件，包括安装在支撑衬底一侧的高频电极的第二半导体元件，通孔 相对于高频电极设置在支撑基板上，以及外部连接电极，其设置在相对于通孔的支撑基板的另一侧。

公开(公告)号：US07456089B2

公开(公告)日：2008-11-25

申请号：US11512238

申请日：2006-08-30

申请人： Yoshitaka Aiba ,  Ryuji Nomoto

发明人： Yoshitaka Aiba ,  Ryuji Nomoto

IPC分类号： H01L21/44 ,  H01L21/50 ,  H01L21/48

CPC分类号： H01L23/3114 ,  H01L23/49827 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/0401 ,  H01L2224/05017 ,  H01L2224/05558 ,  H01L2224/1147 ,  H01L2224/13082 ,  H01L2224/13144 ,  H01L2224/13155 ,  H01L2224/1357 ,  H01L2224/136 ,  H01L2224/16 ,  H01L2924/00013 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01009 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/181 ,  H01L2924/30105 ,  H01L2924/00014 ,  H01L2224/13099 ,  H01L2924/00

摘要： A semiconductor device comprises a semiconductor chip, a wiring layer formed on the semiconductor chip, a column electrode connected at a first end to the wiring layer, and an encapsulation resin formed on the semiconductor chip. In the semiconductor device, the column electrode is provided with a second end, opposite to the first end, projecting from the encapsulation resin, and an external connection member is connected to the column electrode at the second end so that the external connection member is separate from a surface of the encapsulation resin.

摘要翻译： 半导体器件包括半导体芯片，形成在半导体芯片上的布线层，在第一端连接到布线层的列电极和形成在半导体芯片上的封装树脂。 在半导体器件中，列电极设置有从封装树脂突出的与第一端相对的第二端，并且外部连接构件在第二端处连接到列电极，使得外部连接构件分离 从封装树脂的表面。

公开(公告)号：US20080174001A1

公开(公告)日：2008-07-24

申请号：US12076033

申请日：2008-03-13

申请人： Yoshitaka Aiba ,  Tetsuya Fujisawa ,  Yoshiyuki Yoneda

发明人： Yoshitaka Aiba ,  Tetsuya Fujisawa ,  Yoshiyuki Yoneda

IPC分类号： H01L23/498

CPC分类号： H01L23/5226 ,  H01L23/3128 ,  H01L23/49816 ,  H01L23/49827 ,  H01L23/5384 ,  H01L23/552 ,  H01L23/66 ,  H01L24/48 ,  H01L24/73 ,  H01L25/18 ,  H01L2224/0401 ,  H01L2224/05001 ,  H01L2224/05008 ,  H01L2224/05022 ,  H01L2224/05023 ,  H01L2224/05548 ,  H01L2224/05568 ,  H01L2224/05647 ,  H01L2224/13021 ,  H01L2224/16225 ,  H01L2224/16235 ,  H01L2224/16238 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48235 ,  H01L2224/73253 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01019 ,  H01L2924/15174 ,  H01L2924/15184 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19105 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/3025 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/05099 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor device is disclosed that includes a support substrate, a first semiconductor element that is mounted on one side of the support substrate, a second semiconductor element including a high frequency electrode that is mounted on the one side of the support substrate, a via hole that is provided at the support substrate in relation to the high frequency electrode, and an external connection electrode that is provided on the other side of the support substrate in relation to the via hole.

摘要翻译： 公开了一种半导体器件，其包括支撑衬底，安装在支撑衬底的一侧的第一半导体元件，包括安装在支撑衬底一侧的高频电极的第二半导体元件，通孔 相对于高频电极设置在支撑基板上，以及外部连接电极，其设置在相对于通孔的支撑基板的另一侧。

公开(公告)号：US20070194445A1

公开(公告)日：2007-08-23

申请号：US11441067

申请日：2006-05-26

申请人： Yoshitaka Aiba

发明人： Yoshitaka Aiba

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L23/3114 ,  H01L24/05 ,  H01L24/13 ,  H01L2224/0231 ,  H01L2224/0401 ,  H01L2224/05556 ,  H01L2224/13099 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/15787 ,  H01L2924/00

摘要： To provide a semiconductor device with high performance and reliability, in which peeling off an interconnection layer caused due to peeling off of a resin film at a land part is suppressed and thus electrical break down is prevented, and an efficient method for manufacturing the semiconductor device. The semiconductor device includes a semiconductor substrate (e.g., a silicon wafer 10); an insulating film 12 formed on the semiconductor substrate 10; a conductive layer 20 formed on the insulating film 12, the conductive layer 20 formed of an interconnection part 22 and a land part 24 which connects the interconnection part 22 to an external terminal 40; and a resin film 30 covering the conductive layer 20, wherein the resin film 30 is in contact with the insulating film 12 at least at a part of the land part 24 by passing through the conductive layer 20.

摘要翻译： 为了提供一种具有高性能和可靠性的半导体器件，其中抑制了由于在焊盘部分处的树脂膜的剥离引起的互连层的剥离，从而防止了电气故障，并且制造半导体器件的有效方法 。 半导体器件包括半导体衬底（例如，硅晶片10）; 形成在半导体衬底10上的绝缘膜12; 形成在绝缘膜12上的导电层20，由互连部22形成的导电层20和将互连部22连接到外部端子40的焊盘部24; 以及覆盖导电层20的树脂膜30，其中树脂膜30通过穿过导电层20至少在陆部24的一部分处与绝缘膜12接触。

公开(公告)号：US20050253264A1

公开(公告)日：2005-11-17

申请号：US10945111

申请日：2004-09-21

申请人： Yoshitaka Aiba ,  Ryuji Nomoto

发明人： Yoshitaka Aiba ,  Ryuji Nomoto

IPC分类号： H01L23/12 ,  H01L21/56 ,  H01L21/60 ,  H01L21/768 ,  H01L23/31 ,  H01L23/48 ,  H01L23/485 ,  H01L23/498

CPC分类号： H01L23/3114 ,  H01L23/49827 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/0401 ,  H01L2224/05017 ,  H01L2224/05558 ,  H01L2224/1147 ,  H01L2224/13082 ,  H01L2224/13144 ,  H01L2224/13155 ,  H01L2224/1357 ,  H01L2224/136 ,  H01L2224/16 ,  H01L2924/00013 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01009 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/181 ,  H01L2924/30105 ,  H01L2924/00014 ,  H01L2224/13099 ,  H01L2924/00

摘要： A semiconductor device comprises a semiconductor chip, a wiring layer formed on the semiconductor chip, a column electrode connected at a first end to the wiring layer, and an encapsulation resin formed on the semiconductor chip. In the semiconductor device, the column electrode is provided with a second end, opposite to the first end, projecting from the encapsulation resin, and an external connection member is connected to the column electrode at the second end so that the external connection member is separate from a surface of the encapsulation resin.

摘要翻译： 半导体器件包括半导体芯片，形成在半导体芯片上的布线层，在第一端连接到布线层的列电极和形成在半导体芯片上的封装树脂。 在半导体器件中，列电极设置有从封装树脂突出的与第一端相对的第二端，并且外部连接构件在第二端处连接到列电极，使得外部连接构件分离 从封装树脂的表面。

公开(公告)号：US08324714B2

公开(公告)日：2012-12-04

申请号：US12956635

申请日：2010-11-30

申请人： Jun Tsukakoshi ,  Yoshitaka Aiba

发明人： Jun Tsukakoshi ,  Yoshitaka Aiba

IPC分类号： H01L23/544 ,  H01L21/78

CPC分类号： H01L23/544 ,  H01L21/78 ,  H01L23/3114 ,  H01L23/3178 ,  H01L23/564 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L2223/54426 ,  H01L2223/5446 ,  H01L2224/02311 ,  H01L2224/02313 ,  H01L2224/02331 ,  H01L2224/0235 ,  H01L2224/02379 ,  H01L2224/0239 ,  H01L2224/024 ,  H01L2224/0345 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05082 ,  H01L2224/051 ,  H01L2224/056 ,  H01L2224/11462 ,  H01L2224/1147 ,  H01L2224/1148 ,  H01L2224/11849 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01075 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10329 ,  H01L2924/12044 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2924/00

摘要： A semiconductor device includes a semiconductor substrate having a main surface in which a semiconductor element region where a plurality of functional elements are formed is formed; a multilevel wiring layer disposed on the main surface of the semiconductor substrate; a first organic insulating material layer disposed on the multilevel wiring layer; a groove that penetrates the multilevel wiring layer on a scribe region that surrounds the semiconductor element region; and an organic insulating material that is spaced from the first organic insulating material layer and disposed in the groove.

摘要翻译： 半导体器件包括形成有形成有多个功能元件的半导体元件区域的主表面的半导体衬底; 设置在所述半导体基板的主表面上的多层布线层; 设置在所述多层布线层上的第一有机绝缘材料层; 在围绕半导体元件区域的划线区域上贯穿多层布线层的槽; 以及与所述第一有机绝缘材料层间隔开并设置在所述槽中的有机绝缘材料。

公开(公告)号：US07759246B2

公开(公告)日：2010-07-20

申请号：US11477550

申请日：2006-06-30

申请人： Hirohisa Matsuki ,  Yoshitaka Aiba ,  Mitsutaka Sato ,  Tadahiro Okamato

发明人： Hirohisa Matsuki ,  Yoshitaka Aiba ,  Mitsutaka Sato ,  Tadahiro Okamato

IPC分类号： H01L29/41 ,  H01L23/52

CPC分类号： H01L24/11 ,  H01L23/3114 ,  H01L23/5389 ,  H01L24/16 ,  H01L24/24 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/82 ,  H01L24/94 ,  H01L24/97 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/05001 ,  H01L2224/05026 ,  H01L2224/05548 ,  H01L2224/05571 ,  H01L2224/05573 ,  H01L2224/056 ,  H01L2224/12105 ,  H01L2224/13099 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/24226 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48145 ,  H01L2224/73209 ,  H01L2224/73217 ,  H01L2224/73265 ,  H01L2224/73267 ,  H01L2224/82039 ,  H01L2224/92 ,  H01L2224/92244 ,  H01L2224/94 ,  H01L2224/97 ,  H01L2225/06506 ,  H01L2225/0651 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06524 ,  H01L2225/06541 ,  H01L2225/06586 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01057 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/15311 ,  H01L2924/1532 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2224/82 ,  H01L2224/48227 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/00011 ,  H01L2224/85 ,  H01L2224/83 ,  H01L2224/81 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/03

摘要： A semiconductor device includes a first semiconductor chip (5) having a first terminal (7) on one surface, a second semiconductor chip (1a) which is larger than the first semiconductor chip (5) and on which the first semiconductor chip (5) is stacked and which has a second terminal (3) on one surface, an insulating layer (10) formed on a second semiconductor chip (1a) to cover the first semiconductor chip (5), a plurality of holes (10a) formed in the insulating layer (10) on at least a peripheral area of the first semiconductor chip (5), a via (11a) formed like a film on inner peripheral surfaces and bottom surfaces of the holes (10a) and connected electrically to the second terminal (3) of the second semiconductor chip (1a), a wiring pattern (11b) formed on an upper surface of the insulating layer (10), and an external terminal (14) formed on the wiring pattern (11b).

摘要翻译： 一种半导体器件包括在一个表面上具有第一端子（7）的第一半导体芯片（5），大于第一半导体芯片（5）的第二半导体芯片（1a），并且第一半导体芯片（5） 并且在一个表面上具有第二端子（3），形成在第二半导体芯片（1a）上以覆盖第一半导体芯片（5）的绝缘层（10），形成在第二半导体芯片 在所述第一半导体芯片（5）的至少周边区域上具有绝缘层（10），在所述孔（10a）的内周面和底面上形成为膜状的通路（11a），并且与所述第二端子 3），形成在绝缘层（10）的上表面上的布线图案（11b）和形成在布线图案（11b）上的外部端子（14）。

公开(公告)号：US20080197466A1

公开(公告)日：2008-08-21

申请号：US12111379

申请日：2008-04-29

申请人： Ryuji NOMOTO ,  Yoshitaka AIBA

发明人： Ryuji NOMOTO ,  Yoshitaka AIBA

IPC分类号： H01L23/495

CPC分类号： H01L21/6835 ,  H01L21/561 ,  H01L21/568 ,  H01L23/3107 ,  H01L23/49541 ,  H01L23/49575 ,  H01L23/49589 ,  H01L23/544 ,  H01L24/12 ,  H01L24/32 ,  H01L24/48 ,  H01L24/49 ,  H01L24/83 ,  H01L24/85 ,  H01L24/97 ,  H01L25/0655 ,  H01L25/0657 ,  H01L25/50 ,  H01L2221/68345 ,  H01L2223/54426 ,  H01L2223/54473 ,  H01L2224/0401 ,  H01L2224/056 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05664 ,  H01L2224/13144 ,  H01L2224/16 ,  H01L2224/32145 ,  H01L2224/48091 ,  H01L2224/48095 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/49171 ,  H01L2224/4943 ,  H01L2224/73253 ,  H01L2224/73265 ,  H01L2224/7565 ,  H01L2224/83121 ,  H01L2224/83136 ,  H01L2224/8385 ,  H01L2224/85001 ,  H01L2224/854 ,  H01L2224/85439 ,  H01L2224/85444 ,  H01L2224/85464 ,  H01L2224/97 ,  H01L2225/0651 ,  H01L2225/06568 ,  H01L2225/06582 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01058 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/07802 ,  H01L2924/181 ,  H01L2924/18161 ,  H01L2924/18165 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/19105 ,  H01L2224/85 ,  H01L2224/45099 ,  H01L2924/00 ,  H01L2924/00012

摘要： A semiconductor device includes: a semiconductor chip; a plurality of pellet-like electrically conductive members connected to electrodes of the semiconductor chip; and an encapsulation resin that encapsulates the semiconductor chip and the electrically conductive members. The electrically conductive members are embedded into the encapsulation resin. Surfaces of the electrically conductive members are exposed from the encapsulation resin so that the electrically conductive members serve as external connection terminals of the semiconductor device.

摘要翻译： 半导体器件包括：半导体芯片; 连接到所述半导体芯片的电极的多个颗粒状导电构件; 以及密封半导体芯片和导电构件的封装树脂。 导电构件嵌入到封装树脂中。 导电构件的表面从封装树脂露出，使得导电构件用作半导体器件的外部连接端子。

公开(公告)号：US20070249093A1

公开(公告)日：2007-10-25

申请号：US11512238

申请日：2006-08-30

申请人： Yoshitaka Aiba ,  Ryuji Nomoto

发明人： Yoshitaka Aiba ,  Ryuji Nomoto

IPC分类号： H01L21/00

CPC分类号： H01L23/3114 ,  H01L23/49827 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/0401 ,  H01L2224/05017 ,  H01L2224/05558 ,  H01L2224/1147 ,  H01L2224/13082 ,  H01L2224/13144 ,  H01L2224/13155 ,  H01L2224/1357 ,  H01L2224/136 ,  H01L2224/16 ,  H01L2924/00013 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01009 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/181 ,  H01L2924/30105 ,  H01L2924/00014 ,  H01L2224/13099 ,  H01L2924/00

摘要： A semiconductor device comprises a semiconductor chip, a wiring layer formed on the semiconductor chip, a column electrode connected at a first end to the wiring layer, and an encapsulation resin formed on the semiconductor chip. In the semiconductor device, the column electrode is provided with a second end, opposite to the first end, projecting from the encapsulation resin, and an external connection member is connected to the column electrode at the second end so that the external connection member is separate from a surface of the encapsulation resin.

摘要翻译： 半导体器件包括半导体芯片，形成在半导体芯片上的布线层，在第一端连接到布线层的列电极和形成在半导体芯片上的封装树脂。 在半导体器件中，列电极设置有从封装树脂突出的与第一端相对的第二端，并且外部连接构件在第二端处连接到列电极，使得外部连接构件分离 从封装树脂的表面。

公开(公告)号：US07251801B2

公开(公告)日：2007-07-31

申请号：US11019156

申请日：2004-12-23

申请人： Kaname Ozawa ,  Mitsutaka Sato ,  Tetsuya Fujisawa ,  Yoshiyuki Yoneda ,  Ryuji Nomoto ,  Yoshitaka Aiba

发明人： Kaname Ozawa ,  Mitsutaka Sato ,  Tetsuya Fujisawa ,  Yoshiyuki Yoneda ,  Ryuji Nomoto ,  Yoshitaka Aiba

IPC分类号： G06F17/50

CPC分类号： G06F17/5068 ,  H05K3/0005

摘要： A method of design of a circuit board enabling high density conductor lines to be drawn efficiently. A rats nest is formed by connecting pads to which terminals of an electronic device are connected and external connection terminals by lines. A region with the highest density of lines of the rats nest is then selected and design rules relating to routes and dimensions of conductor lines are set in the region with the highest density of lines of the rats nest. Conductor lines are then laid at the region with the highest density of lines of the rats nest, and whether or not the conductor lines can be laid at the region with the highest density of lines of the rats nest is confirmed. Setting of the design rules and laying of conductor lines are if the conductor lines cannot be laid, and the conductor lines of the remaining regions are laid by the set design rules if the conductor lines can be laid.

摘要翻译： 一种能够高效率地绘制高密度导线的电路板的设计方法。 大鼠巢通过连接电子装置的端子的连接垫和通过线路的外部连接端子形成。 然后选择大鼠巢线密度最高的区域，并且在具有最大密度的大鼠巢的区域中设置与导线的路线和尺寸相关的设计规则。 然后将导体线放置在具有最高密度的大鼠巢的区域，并且确定导线是否可以放置在具有最大密度的大鼠巢的密度的区域。 如果导体线不能铺设，则设计规则和布线的设置，如果可以铺设导体线，则通过设定的规则布置其余区域的导体线。