公开(公告)号：US20030157760A1

公开(公告)日：2003-08-21

申请号：US10082048

申请日：2002-02-20

Applicant: Applied Materials, Inc.

Inventor： Ming Xi ,  Soonil Hong ,  Hyungsuk A. Yoon ,  Michael X. Yang ,  Hui Zhang

IPC: H01L021/8238

CPC classification number: C23C16/06 ,  C23C16/45525 ,  H01L21/31604 ,  H01L27/10861 ,  H01L28/55 ,  H01L28/60 ,  H01L28/84 ,  H01L28/90

Abstract: A method of tungsten deposition for dynamic random access memory (DRAM) applications is described. The DRAM devices typically include two electrodes separated by a dielectric material. At least one of the two electrodes comprises a tungsten-based material. The tungsten-based material may be formed using a cyclical deposition technique. Using the cyclical deposition technique, the tungsten-based material is formed by alternately adsorbing a tungsten-containing precursor and a reducing gas on a structure.

Abstract translation: 描述了用于动态随机存取存储器（DRAM）应用的钨沉积的方法。 DRAM器件通常包括由电介质材料隔开的两个电极。 两个电极中的至少一个包括钨基材料。 钨基材料可以使用循环沉积技术形成。 使用循环沉积技术，通过在结构上交替吸附含钨前体和还原气体形成钨基材料。

公开(公告)号：US20030008070A1

公开(公告)日：2003-01-09

申请号：US09880465

申请日：2001-06-12

Applicant: Applied Materials,Inc

Inventor： Sean Michael Seutter ,  Seshadri Ganguli ,  Mei Chang ,  Michael X. Yang ,  Ming Xi

IPC: C23C016/00

CPC classification number: C23C16/16 ,  H01L21/28556 ,  H01L21/28568

Abstract: Provided herein is a method of depositing a low resistivity tungsten film onto a wafer comprising the steps of introducing a metalorganic tungsten-containing compound into a deposition chamber of a CVD apparatus; maintaining the deposition chamber at a pressure and the wafer at a temperature suitable for the high pressure chemical vapor deposition of the tungsten film onto the wafer; thermally decomposing the tungsten-containing compound in the deposition chamber; and vapor-depositing the tungsten film onto the wafer thereby forming a low-resistivity tungsten film. Specifically provided is a method of depositing a low-resistivity tungsten film by high pressure MOCVD using tungsten hexacarbonyl as the precursor. Also provided is a low-resistivity tungsten film.

Abstract translation: 本文提供了一种在晶片上沉积低电阻率钨膜的方法，包括将金属有机含钨化合物引入CVD设备的沉积室中的步骤; 将沉积室保持在压力和晶片处于适合于将钨膜高压化学气相沉积到晶片上的温度; 在沉积室中热分解含钨化合物; 并将钨膜气相沉积到晶片上，从而形成低电阻率钨膜。 具体提供的是使用六羰基钨作为前体的通过高压MOCVD沉积低电阻率钨膜的方法。 还提供了低电阻率钨膜。

公开(公告)号：US20040206623A1

公开(公告)日：2004-10-21

申请号：US10826489

申请日：2004-04-16

Applicant: Applied Materials, Inc.

Inventor： Allen L. D'Ambra ,  Arulkumar Shanmugasundram ,  Michael X. Yang ,  Yevgeniy (Eugene) Rabinovich ,  Dmitry Lubomirsky

IPC: C25D017/00

CPC classification number: C25D17/00

Abstract: Embodiments of the invention generally provide a fluid delivery system for an electrochemical plating platform. The fluid delivery system is configured to supply multiple chemistries to multiple plating cells with minimal bubble formation in the fluid delivery system. The system includes a solution mixing system, a fluid distribution manifold in communication with the solution mixing system, a plurality of fluid conduits in fluid communication with the fluid distribution manifold, and a plurality of fluid tanks, each of the plurality of fluid tanks being in fluid communication with at least one of the plurality of fluid conduits.

Abstract translation: 本发明的实施方案通常提供用于电化学电镀平台的流体输送系统。 流体输送系统被配置为在流体输送系统中以最小的气泡形成向多个电镀单元提供多个化学物质。 该系统包括溶液混合系统，与溶液混合系统连通的流体分配歧管，与流体分配歧管流体连通的多个流体导管和多个流体箱，多个流体箱中的每一个处于 与多个流体导管中的至少一个流体连通。

公开(公告)号：US20040192066A1

公开(公告)日：2004-09-30

申请号：US10781040

申请日：2004-02-18

Applicant: Applied Materials, Inc.

Inventor： Dmitry Lubomirsky ,  Michael X. Yang

IPC: H01L021/31

CPC classification number: H01L21/6715 ,  C25D7/123 ,  C25D17/001 ,  C25D21/00 ,  C25D21/04 ,  H01L21/2885

Abstract: Embodiments of the invention generally provide a method for immersing a substrate into a fluid solution. The method includes loading a substrate into a receiving member configured to support the substrate in a face down orientation, tilting the receiving member to a first tilt angle measured from horizontal, displacing the receiving member toward the fluid solution, and tilting the receiving member to a second tilt angle measured from horizontal during the displacing.

Abstract translation: 本发明的实施方案通常提供将基材浸入流体溶液中的方法。 该方法包括将基板装载到构造成以面朝下的方向支撑基板的接收构件中，将接收构件倾斜到从水平测量的第一倾斜角，使接收构件朝向流体溶液移位，并将接收构件倾斜到 在移位期间从水平测量的第二倾斜角。

公开(公告)号：US20040118694A1

公开(公告)日：2004-06-24

申请号：US10438624

申请日：2003-05-14

Applicant: Applied Materials, Inc.

Inventor： Michael X. Yang ,  Ming Xi ,  Russell C. Ellwanger ,  Eric B. Britcher

IPC: C25D007/12

CPC classification number: C25D17/001 ,  C25D7/123 ,  H01L21/2885 ,  H01L21/67011 ,  H01L21/67167 ,  H01L21/6723 ,  H01L21/76877

Abstract: Embodiments of the invention generally provide an electrochemical processing system configured to provide multiple chemistries for a single plating process. The multiple chemistries are generally delivered to individual plating cells positioned on the processing system. The individual chemistries may generally be used to conduct direct plating on a barrier layer, alloy plating, plating on a thin seed layer, optimized feature fill and bulk fill plating, plating with minimized defects, and/or any other plating process wherein multiple chemistries may be utilized to take advantage of the desirable characteristics of each chemistry.

Abstract translation: 本发明的实施方案通常提供一种电化学处理系统，其被配置为为单一电镀工艺提供多种化学物质。 多个化学物质通常被输送到位于处理系统上的各个电镀单元。 各种化学物质通常可用于在阻挡层上进行直接电镀，合金电镀，薄种子层上的电镀，优化的特征填充和填充电镀，具有最小化缺陷的电镀，和/或其中多个化学物质可以 用于利用每种化学物质的理想特性。

公开(公告)号：US20040026255A1

公开(公告)日：2004-02-12

申请号：US10358781

申请日：2003-02-04

Applicant: Applied Materials, Inc

Inventor： Nicolay Y. Kovarsky ,  Dmitry Lubomirsky ,  Anzhong Chang ,  Yezdi N. Dordi ,  Michael X. Yang

IPC: C25D017/00 ,  C25D003/38

CPC classification number: H01L21/2885 ,  C25D7/123 ,  C25D21/18 ,  C25D21/22

Abstract: Embodiments of the invention generally provide a method and apparatus for plating a metal on a substrate. The electrochemical plating system generally includes a plating cell having an anolyte compartment and a catholyte compartment, the anolyte compartment having an insoluble anode and an anolyte therein. The catholyte compartment generally includes a substrate support member and a catholyte therein. In addition, the plating cell generally includes an ion-exchange membrane disposed between the anolyte compartment and the catholyte compartment and a pump in fluid communication with the anolyte compartment, the pump configured to provide an anolyte to the anolyte compartment having a linear velocity of between about 0.5 cm/sec to about 50 cm/sec. The method generally includes supplying an anolyte solution to an anolyte compartment disposed in a plating cell having an anolyte compartment and a catholyte compartment. The anolyte solution generally passes through the anolyte compartment at a linear velocity of between about 0.5 cm/sec to about 50 cm/sec. The method further includes plating a metal onto the substrate with a catholyte solution disposed in a catholyte compartment of the plating cell, the catholyte compartment and the anolyte compartment separated by an ion-exchange membrane, removing used anolyte solution from the plating cell and passing at least a portion of the used anolyte solution through a correction device including at least one of copper oxide, copper hydroxide and combinations thereof.

Abstract translation: 本发明的实施例通常提供一种用于在基底上电镀金属的方法和装置。 电化学电镀系统通常包括具有阳极电解液室和阴极电解液隔室的电镀槽，阳极电解液室具有不溶性阳极和阳极电解液。 阴极电解液隔室通常在其中包括基板支撑构件和阴极电解液。 此外，电镀槽通常包括设置在阳极电解液室和阴极电解液室之间的离子交换膜和与阳极电解液室流体连通的泵，所述泵被配置为向阳极电解液室提供线性速度介于 约0.5cm / sec至约50cm / sec。 该方法通常包括将阳极电解液供应到设置在具有阳极电解液室和阴极电解液室的电镀槽中的阳极电解液室。 阳极电解液通常以约0.5cm / sec至约50cm / sec的线速度穿过阳极电解液室。 该方法还包括用设置在电镀池的阴极电解液室中的阴极电解液，阴离子电解质隔室和由离子交换膜隔开的阳极电解液室将金属电镀到基板上，从电镀槽中除去使用的阳极电解液并通过 通过包括氧化铜，氢氧化铜及其组合中的至少一种的校正装置的至少一部分所使用的阳极电解液。

公开(公告)号：US20040014315A1

公开(公告)日：2004-01-22

申请号：US10299212

申请日：2002-11-18

Applicant: Applied Materials, Inc.

Inventor： Ken K. Lai ,  Jeong Soo Byun ,  Frederick C. Wu ,  Ramanujapuran A. Srinivas ,  Avgerinos Gelatos ,  Mei Chang ,  Moris Kori ,  Ashok K. Sinha ,  Hua Chung ,  Hongbin Fang ,  Alfred W. Mak ,  Michael X. Yang ,  Ming Xi

IPC: H01L021/44

CPC classification number: C23C16/45525 ,  C23C16/0281 ,  C23C16/08 ,  C23C16/14 ,  C23C16/45523 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76876 ,  H01L21/76877

Abstract: Methods for the deposition of tungsten films are provided. The methods include depositing a nucleation layer by alternatively adsorbing a tungsten precursor and a reducing gas on a substrate, and depositing a bulk layer of tungsten over the nucleation layer.

Abstract translation: 提供了沉积钨膜的方法。 所述方法包括通过交替地将钨前体和还原气体吸附在基底上沉积成核层，以及在成核层上沉积钨层。

公开(公告)号：US20040000488A1

公开(公告)日：2004-01-01

申请号：US10186056

申请日：2002-06-28

Applicant: Applied Materials, Inc.

Inventor： Michael X. Yang

IPC: C25D005/00 ,  C25D005/02

CPC classification number: C25D7/123 ,  C25D5/02 ,  C25D17/001

Abstract: The method generally includes filling features in a substrate by plating metal ions from a gap fill solution onto the substrate, reducing plating activity in the features in a polymer treatment step by conditioning the substrate surface with a conditioning solution, and plating the substrate surface to a desired thickness by plating metal ions from a bulk fill solution onto the substrate surface. The method may also include treating the substrate with a conditioning solution comprising suppressors after a seed layer deposition to substantially eliminate conformal deposition in features of the substrate and plating metal ions from a plating solution onto the substrate.

Abstract translation: 该方法通常包括通过将间隙填充溶液中的金属离子电镀到衬底上来填充衬底中的特征，通过用调节溶液调节衬底表面，降低聚合物处理步骤中的特征的电镀活性，并将衬底表面电镀到 通过将填充溶液中的金属离子镀在基底表面上来获得所需的厚度。 该方法还可以包括在种子层沉积之后用包含抑制剂的调理溶液处理基底，以基本上消除基底特征中的共形沉积，并将金属离子从电镀溶液镀覆到基底上。

公开(公告)号：US20040065255A1

公开(公告)日：2004-04-08

申请号：US10356251

申请日：2003-01-31

Applicant: Applied Materials, Inc.

Inventor： Michael X. Yang ,  Joseph Yudovsky ,  Hyungsuk Yoon ,  Xiaoxiong Yuan

IPC: C23C016/00

CPC classification number: C23C16/45551 ,  C23C16/45519 ,  C23C16/54

Abstract: Embodiments of the invention are generally directed to a cyclical layer deposition system, which includes a processing chamber; at least one load lock chamber connected to the processing chamber; a plurality of gas injectors connected to the processing chamber. The gas injectors are configured to deliver gas streams into the processing chamber. The system further includes at least one shuttle movable between the at least one load lock chamber and the processing chamber.

Abstract translation: 本发明的实施例通常涉及一种循环层沉积系统，其包括处理室; 连接到处理室的至少一个装载锁定室; 连接到处理室的多个气体喷射器。 气体注入器构造成将气流输送到处理室中。 所述系统还包括在所述至少一个装载锁定室和所述处理室之间可移动的至少一个梭。

公开(公告)号：US20040016637A1

公开(公告)日：2004-01-29

申请号：US10616284

申请日：2003-07-08

Applicant: APPLIED MATERIALS, INC.

Inventor： Michael X. Yang ,  Ming Xi ,  Russell C. Ellwanger ,  Eric B. Britcher ,  Bernardo Donoso ,  Lily L. Pang ,  Svetlana Sherman ,  Henry Ho ,  Anh N. Nguyen ,  Alexander N. Lerner ,  Allen L. D'Ambra ,  Arulkumar Shanmugasundram ,  Tetsuya Ishikawa ,  Yevgeniy Rabinovich ,  Dmitry Lubomirsky ,  Yeuk-Fai Edwin Mok ,  Son T. Nguyen

IPC: C25D017/00

CPC classification number: H01L21/6719 ,  A23D7/00 ,  A23D7/005 ,  A23D7/01 ,  A23J7/00 ,  B08B3/02 ,  C25D7/123 ,  C25D17/001 ,  C25D17/002 ,  C25D17/02 ,  C25D21/02 ,  C25D21/08 ,  H01L21/67028 ,  H01L21/67034 ,  H01L21/67051 ,  H01L21/67109 ,  H01L21/6715 ,  H01L21/67196 ,  H01L21/6723 ,  H01L21/68 ,  H01L21/6838 ,  H01L21/68707

Abstract: Embodiments of the invention generally provide an electrochemical plating system. The plating system includes a substrate loading station positioned in communication with a mainframe processing platform, at least one substrate plating cell positioned on the mainframe, at least one substrate bevel cleaning cell positioned on the mainframe, and a stacked substrate annealing station positioned in communication with at least one of the mainframe and the loading station, each chamber in the stacked substrate annealing station having a heating plate, a cooling plate, and a substrate transfer robot therein.

Abstract translation: 本发明的实施方案通常提供电化学电镀系统。 电镀系统包括位于与主机处理平台连通的基板装载站，位于主机上的至少一个基板镀覆单元，位于主机上的至少一个基板斜面清洁单元，以及与 主机和加载站中的至少一个，层叠基板退火站中的每个室具有加热板，冷却板和基板传送机器人。