公开(公告)号：US08081392B2

公开(公告)日：2011-12-20

申请号：US12954095

申请日：2010-11-24

申请人： Atsujiro Ishii ,  Yoshiaki Shimizu

发明人： Atsujiro Ishii ,  Yoshiaki Shimizu

IPC分类号： G02B15/15 ,  G02B15/14

CPC分类号： G02B15/173

摘要： The invention relates to a new mechanism for permitting a zoom lens to focus on a short distance subject by moving a focusing lens group in an amount that varies in an optical axis direction depending on a zooming position. The zoom lens comprises, in order from its object side, a positive first lens group, a negative second lens group and a positive third lens group. Zooming is implemented while the space between adjoining lens groups is varied, and focusing on a short distance subject is implemented by moving the negative second lens group in an amount that varies in the optical axis direction depending on a zooming position. The negative second lens group comprises a negative front unit G2F and a negative rear unit G2R. The space between the negative front unit G2F and the negative rear unit G2R is varied depending on a subject distance but that space remains constant wherever the zooming position lies.

摘要翻译： 本发明涉及一种新的机构，用于允许变焦镜头通过沿着在光轴方向上变化的量根据变焦位置移动聚焦透镜组来聚焦在短距离物体上。 变焦透镜从其物体侧依次包括正的第一透镜组，负的第二透镜组和正的第三透镜组。 在相邻透镜组之间的空间变化的同时进行变焦，并且通过使负的第二透镜组以在光轴方向上变化的量根据变焦位置的移动来实现对短距离被摄体的聚焦。 负第二透镜组包括负前单元G2F和负后单元G2R。 负前置单元G2F和负侧后置单元G2R之间的空间根据被摄体距离而变化，但是在缩放位置所在的位置保持恒定。

公开(公告)号：US20080112064A1

公开(公告)日：2008-05-15

申请号：US11985027

申请日：2007-11-12

申请人： Atsujiro Ishii ,  Yoshiaki Shimizu

发明人： Atsujiro Ishii ,  Yoshiaki Shimizu

IPC分类号： G02B15/14

CPC分类号： G02B15/173

摘要： The invention relates to a new mechanism for permitting a zoom lens to focus on a short distance subject by moving a focusing lens group in an amount that varies in an optical axis direction depending on a zooming position. The zoom lens comprises, in order from its object side, a positive first lens group, a negative second lens group and a positive third lens group. Zooming is implemented while the space between adjoining lens groups is varied, and focusing on a short distance subject is implemented by moving the negative second lens group in an amount that varies in the optical axis direction depending on a zooming position. The negative second lens group comprises a negative front unit G2F and a negative rear unit G2R. The space between the negative front unit G2F and the negative rear unit G2R is varied depending on a subject distance but that space remains constant wherever the zooming position lies.

摘要翻译： 本发明涉及一种新的机构，用于允许变焦镜头通过沿着在光轴方向上变化的量根据变焦位置移动聚焦透镜组来聚焦在短距离物体上。 变焦透镜从其物体侧依次包括正的第一透镜组，负的第二透镜组和正的第三透镜组。 在相邻透镜组之间的空间变化的同时进行变焦，并且通过使负的第二透镜组以在光轴方向上变化的量根据变焦位置的移动来实现对短距离被摄体的聚焦。 负第二透镜组包括负前单元G 2 F和负后单元G 2 R。负前单元G 2 F和负后单元G 2 R之间的空间根据被摄体距离而变化，但是该空间 保持恒定，无论放大位置在哪里。

公开(公告)号：US08354696B2

公开(公告)日：2013-01-15

申请号：US12979142

申请日：2010-12-27

申请人： Yoshiaki Shimizu ,  Kazuhiko Matsuki

发明人： Yoshiaki Shimizu ,  Kazuhiko Matsuki

IPC分类号： H01L27/118

CPC分类号： H01L27/11807 ,  H01L27/0207

摘要： A semiconductor device may include a plurality of logic circuits connected to each other through input and output terminals thereof. The plurality of logic circuits comprising a first sub-plurality of logic circuits coupled to a first one of different power systems. The first sub-plurality of logic circuits is laid out and adjacent to each other in a first direction. The first sub-plurality of logic circuits includes a first logic circuit and a second logic circuit. The second logic circuit is adjacent to the first logic circuit. The first logic circuit includes a first element comprising a first diffusion layer. The second logic circuit includes a second element comprising the first diffusion layer.

摘要翻译： 半导体器件可以包括通过其输入和输出端子彼此连接的多个逻辑电路。 多个逻辑电路包括耦合到不同电源系统中的第一个的第一子组多个逻辑电路。 逻辑电路的第一子组合在第一方向相互布置并相邻。 第一子逻辑电路包括第一逻辑电路和第二逻辑电路。 第二逻辑电路与第一逻辑电路相邻。 第一逻辑电路包括包括第一扩散层的第一元件。 第二逻辑电路包括包括第一扩散层的第二元件。

公开(公告)号：US20120038719A1

公开(公告)日：2012-02-16

申请号：US13212921

申请日：2011-08-18

申请人： Yoshiaki Shimizu ,  Taku Ishizawa ,  Yuki Takeda ,  Syuichi Koganehira

发明人： Yoshiaki Shimizu ,  Taku Ishizawa ,  Yuki Takeda ,  Syuichi Koganehira

IPC分类号： B41J2/175

CPC分类号： B41J2/17506 ,  B41J2/175 ,  B41J2/17513 ,  B41J2/1752 ,  B41J2/17523 ,  B41J2/17553 ,  B41J2/19

摘要： A liquid container for supplying a liquid to a liquid ejection apparatus comprises: a liquid chamber provided to store the liquid; an air chamber connected with the liquid chamber to introduce the outside air into the liquid chamber with consumption of the liquid in the liquid chamber; an open-air hole provided to introduce the outside air into the air chamber; and a liquid inlet provided to fill the liquid into the liquid chamber, wherein the liquid inlet is located at a lower position than the open-air hole, in a filling attitude of the liquid container in which the liquid is filled into the liquid chamber.

摘要翻译： 用于向液体喷射装置供应液体的液体容器包括：设置用于储存液体的液体室; 与所述液体室连接的空气室，以在所述液体室中的液体消耗的情况下将所述外部空气引入所述液体室; 设置用于将外部空气引入空气室的露天孔; 以及设置成将液体填充到液体室中的液体入口，其中液体入口位于比露天孔低的位置处，液体容器的填充位置处于液体容器中，其中液体被填充到液体室中。

公开(公告)号：US20110214505A1

公开(公告)日：2011-09-08

申请号：US13109769

申请日：2011-05-17

申请人： Daigo Aoki ,  Hideyuki Hashimoto ,  Tetsuya Kobayashi ,  Kunio Koizumi ,  Yoshiaki Shimizu ,  Yutaka Takashima ,  Shinya Yokoyama

发明人： Daigo Aoki ,  Hideyuki Hashimoto ,  Tetsuya Kobayashi ,  Kunio Koizumi ,  Yoshiaki Shimizu ,  Yutaka Takashima ,  Shinya Yokoyama

IPC分类号： G01L9/06

CPC分类号： G01L9/0054

摘要： There is provided a semiconductor pressure sensor which improves the sensor sensitivity and is excellent in the withstand pressure characteristic and the temperature characteristic. In the semiconductor pressure sensor in which a diaphragm is formed by a cavity provided on one of top and bottom surfaces of a silicon substrate and a plurality of piezoresistors is disposed in the diaphragm edge, a recess which has a larger area than the planar shape of the diaphragm and whose entire edge is located outward from the diaphragm edge in plan view is provided in a protective film which covers the entire surface of the silicon substrate on the diaphragm side. The protective film located on the diaphragm is preferably formed of SiO2.

摘要翻译： 提供了一种提高传感器灵敏度并且耐压特性和温度特性优异的半导体压力传感器。 在半导体压力传感器中，其中隔膜由设置在硅衬底的顶表面和底表面中的一个上的空腔形成，并且多个压电电阻器设置在隔膜边缘中，具有比平面形状大的面积的凹部 隔膜的整个边缘在平面图中从隔膜边缘向外定位在覆盖隔膜侧的硅基板的整个表面的保护膜中。 位于隔膜上的保护膜优选由SiO 2形成。

公开(公告)号：US07842611B2

公开(公告)日：2010-11-30

申请号：US12343740

申请日：2008-12-24

申请人： Yoshiaki Shimizu

发明人： Yoshiaki Shimizu

IPC分类号： H01L21/768

CPC分类号： H05K3/242 ,  H01L2224/11 ,  H05K1/114 ,  H05K3/0038 ,  H05K3/0047 ,  H05K3/429 ,  H05K2201/09254 ,  H05K2201/09627 ,  H05K2201/10734 ,  H05K2203/0242 ,  H05K2203/175

摘要： According to the present invention, on a double-sided substrate 1, a plurality of through-holes 2 connected to one wire 6 for plating as well as wiring are collectively arranged within a narrow range close to the connection portion. After a plating process, a penetrating hole 12 is formed and the connection potion is cut off. Thus, the wire 6 for plating and the collectively arranged through-holes 2 are made independent of one another so that no electric conduction occurs among the wire 6 for plating and the through-holes 2.

摘要翻译： 根据本发明，在双面基板1上，与连接部分附近的窄范围内共同配置多个与电镀用布线6连接的通孔2以及配线。 电镀处理后，形成贯通孔12，切断连接部。 因此，用于电镀的导线6和共同设置的通孔2彼此独立，使得在用于电镀的导线6和通孔2之间不​​会发生导电。

公开(公告)号：US07595960B2

公开(公告)日：2009-09-29

申请号：US11486797

申请日：2006-07-14

申请人： Yoshiaki Shimizu ,  Akira Takahashi

发明人： Yoshiaki Shimizu ,  Akira Takahashi

IPC分类号： G11B5/31

CPC分类号： G11B5/3133 ,  G11B5/6005 ,  G11B5/6064

摘要： A thin film magnetic head is provided. The thin film magnetic head includes a read head and a write head, a heating element, or the combination thereof. The heating element includes a heating conductor layer and a high-melting-point-material layer disposed so as to at least partially overlap the heating conductor layer. Electromigration in the heating conductor layer can be suppressed.

摘要翻译： 提供薄膜磁头。 薄膜磁头包括读取头和写入头，加热元件或其组合。 加热元件包括加热导体层和设置成至少部分地与加热导体层重叠的高熔点材料层。 可以抑制加热导体层中的电迁移。

公开(公告)号：US20090146301A1

公开(公告)日：2009-06-11

申请号：US12331467

申请日：2008-12-10

申请人： Yoshiaki Shimizu ,  Yuichiro Yamada ,  Toshiyuki Fukuda

发明人： Yoshiaki Shimizu ,  Yuichiro Yamada ,  Toshiyuki Fukuda

IPC分类号： H01L23/482 ,  H01L23/488 ,  H01L21/44

CPC分类号： H05K3/38 ,  B29C43/18 ,  B29C45/02 ,  B29C45/14655 ,  H01L21/565 ,  H01L23/3128 ,  H01L24/16 ,  H01L24/27 ,  H01L24/28 ,  H01L24/29 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/743 ,  H01L24/83 ,  H01L24/85 ,  H01L25/105 ,  H01L2224/05554 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/16235 ,  H01L2224/291 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/29144 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/29339 ,  H01L2224/32225 ,  H01L2224/32506 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/4809 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/49171 ,  H01L2224/73265 ,  H01L2224/743 ,  H01L2224/83101 ,  H01L2224/83192 ,  H01L2224/83805 ,  H01L2224/83856 ,  H01L2224/85 ,  H01L2224/92247 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2924/01014 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01038 ,  H01L2924/01042 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/0133 ,  H01L2924/0134 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/07802 ,  H01L2924/12042 ,  H01L2924/1517 ,  H01L2924/15173 ,  H01L2924/15174 ,  H01L2924/15192 ,  H01L2924/15311 ,  H01L2924/1532 ,  H01L2924/15331 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/20751 ,  H01L2924/20752 ,  H01L2924/20753 ,  H01L2924/3511 ,  H05K3/3457 ,  H05K2201/0379 ,  H05K2201/10515 ,  H05K2201/10977 ,  H05K2203/0278 ,  H01L2924/00014 ,  H01L2924/07025 ,  H01L2924/0635 ,  H01L2924/00 ,  H01L2924/01083 ,  H01L2924/01049 ,  H01L2924/00012 ,  H01L2924/0695

摘要： A semiconductor device capable of realizing highly reliable three-dimensional mounting, and a method of manufacturing the same, are provided. A projected electrode 9 is formed in a region outside of an element mounting region of a substrate 5. The projected electrode 9 includes a protruding portion that protrudes from the front face of a molding resin portion 10. The distal end of the protruding portion is a flat face 13. In addition, a portion of the projected electrode 9 whose cross section is larger than the protruding portion is positioned inside the molding resin portion 10.

摘要翻译： 提供能够实现高度可靠的三维安装的半导体器件及其制造方法。 突起电极9形成在基板5的元件安装区域的外侧的区域中。突出电极9包括从模制树脂部分10的前表面突出的突出部分。突出部分的远端是 另外，突出电极9的横截面大于突出部分的部分位于模制树脂部分10的内部。

公开(公告)号：US20080225442A1

公开(公告)日：2008-09-18

申请号：US12037613

申请日：2008-02-26

申请人： Koichi Hirose ,  Yoshiaki Shimizu

发明人： Koichi Hirose ,  Yoshiaki Shimizu

IPC分类号： G11B5/33

CPC分类号： G11B5/115 ,  G11B5/1278 ,  G11B5/3116 ,  G11B5/3912

摘要： A magnetic head includes a magnetic sensor layer and upper and lower read shields sandwiching the magnetic sensor layer. At least one of the upper and lower read shields includes at least one end portion having a plurality of portions isolated in a core width direction of the magnetic sensor layer. The portions are isolated at least on an air bearing surface side. In this manner, edge noise can be suppressed even if external magnetic field noise or radio noise acts on the upper read shield, the lower read shield, the trailing shield, or the return yoke.

摘要翻译： 磁头包括磁传感器层和夹着磁传感器层的上下读屏蔽件。 上部和下部读取屏蔽件中的至少一个包括至少一个端部，其具有在磁性传感器层的芯宽度方向上隔离的多个部分。 这些部分至少在空气轴承表面侧被隔离。 以这种方式，即使外部磁场噪声或无线电噪声作用在上部读取屏蔽，下部读取屏蔽，尾部屏蔽或返回磁轭上，也可以抑制边缘噪声。

公开(公告)号：US20070019325A1

公开(公告)日：2007-01-25

申请号：US11486797

申请日：2006-07-14

申请人： Yoshiaki Shimizu ,  Akira Takahashi

发明人： Yoshiaki Shimizu ,  Akira Takahashi

IPC分类号： G11B5/147

CPC分类号： G11B5/3133 ,  G11B5/6005 ,  G11B5/6064

摘要： A thin film magnetic head is provided. The thin film magnetic head includes a read head and a write head, a heating element, or the combination thereof. The heating element includes a heating conductor layer and a high-melting-point-material layer disposed so as to at least partially overlap the heating conductor layer. Electromigration in the heating conductor layer can be suppressed.

摘要翻译： 提供薄膜磁头。 薄膜磁头包括读取头和写入头，加热元件或其组合。 加热元件包括加热导体层和设置成至少部分地与加热导体层重叠的高熔点材料层。 可以抑制加热导体层中的电迁移。