摘要:
An integrated circuit device (10) with a bonding surface (12) directly over its active circuitry, and a method of making such integrated circuits (FIGS. 2A 2E). To make the bonding surface (12), a wafer (20) is provided with vias (24) to its metallization layer (21) and then coated with a seed metal layer (25). A plating pattern (26) is formed on the wafer (20), exposing portions of the seed metal layer (25) and blocking the rest of the seed metal layer (25). These exposed portions are plated with successive metal layers (27, 28, 29), thereby forming a bonding surface (12) having a number of layered stacks (200) that fill the vias (24). The plating pattern and the nonplated portions of the seed metal layer (25) are then removed.
摘要:
An integrated circuit device (10) with a bonding surface (12) directly over its active circuitry, and a method of making such integrated circuits (FIGS. 2A-2E). To make the bonding surface (12), a wafer (20) is provided with vias (24) to its metallization layer (21) and then coated with a seed metal layer (25). A plating pattern (26) is formed on the wafer (20), exposing portions of the seed metal layer (25) and blocking the rest of the seed metal layer (25). These exposed portions are plated with successive metal layers (27, 28, 29), thereby forming a bonding surface (12) having a number of layered stacks (200) that fill the vias (24). The plating pattern and the nonplated portions of the seed metal layer (25) are then removed.
摘要:
A method of fabricating a semiconductor device containing a HVDMOS transistor and a LVDMOS transistor and the device which includes providing a region of semiconductor material of a first conductivity type and forming a high voltage DMOS transistor disposed in the region. A relatively low voltage DMOS transistor is also disposed in that region and electrically isolated from the high voltage DMOS transistor. The low voltage DMOS transistor has spaced apart source and drain regions disposed in the region of semiconductor material and a back gate region of the first conductivity type disposed in the region of semiconductor material between the source and drain regions. The back gate region is electrically coupled to the region of semiconductor material. The region of semiconductor material includes a surface, the source, drain and back gate regions extending to that surface. A well of second conductivity type opposite to the first conductivity type is provided in the region of semiconductor material and the high voltage DMOS transistor is disposed in that well. Optionally, one only of the source or drain regions of the low voltage DMOS transistor is disposed in the well. Also, optionally, a region of second conductivity type opposite to the first conductivity type can be provided between the back gate region and the drain region which is less highly doped than the drain region.
摘要:
An apparatus is provided. There is a circuit assembly with a package substrate and an integrated circuit (IC). The package substrate has a microstrip line, and the IC is secured to the package substrate and is electrically coupled to the microstrip line. A circuit board is also secured to the package substrate. A dielectric waveguide is secured to the circuit board. The dielectric waveguide has a dielectric core that extends into a transition region located between the dielectric waveguide and the microstrip line, and the microstrip line is configured to form a communication link with the dielectric waveguide.
摘要:
An apparatus is provided. There is a circuit assembly with a package substrate and an integrated circuit (IC). The package substrate has a microstrip line, and the IC is secured to the package substrate and is electrically coupled to the microstrip line. A circuit board is also secured to the package substrate. A dielectric waveguide is secured to the circuit board. The dielectric waveguide has a dielectric core that extends into a transition region located between the dielectric waveguide and the microstrip line, and the microstrip line is configured to form a communication link with the dielectric waveguide.
摘要:
A track-and-hold circuit is provided. This track-and-hold circuit is adapted to track an analog input signal and hold a sampled voltage of the analog input signal at a sampling instant for processing by other circuitry, in response to a track signal that alternates with a hold signal. Preferably, the track-and-hold circuit includes a bi-directional current source that sources and sinks current through a first output node and a second output node, a unity gain amplifier that is coupled to first and second output nodes of the bi-directional current source and that receives the analog input signal, a resistor coupled to an output of the unity gain amplifier, and a capacitor coupled between the resistor and ground. Of interest, however, is the bi-directional current source, which includes a differential input circuit that is adapted to receive the track signal and the hold signal and that is coupled to the first and second output nodes and an RC network that is coupled to the differential input circuit. The RC network receives the analog input signal and is scaled to change the location of a zero to reduce the signal-dependence of the sampling instant.
摘要:
Accelerometers have a number of wide-ranging uses, and it is desirable to both increase their accuracy while decreasing size. Here, millimeter or sub-millimeter wavelength accelerometers are provided which has the advantage of having the high accuracy of an optical accelerometer, while being compact. Additionally, because millimeter or sub-millimeter wavelength signals are employed, cumbersome and awkward on-chip optical devices and bulky optical mediums can be avoided.
摘要:
Traditionally, pipelined continuous-time (CT) sigma-delta modulators (SDM) have been difficult to build due at least in part to the difficulties in calibrating the pipeline. Here, however, a pipelined CT SDM is provided that has an architecture that is conducing to being calibrated. Namely, the system includes a digital filter and other features that can be adjusted to account for input imbalance errors and well as quantization leakage noise.
摘要:
A track-and-hold circuit is provided. This track-and-hold circuit is adapted to track an analog input signal and hold a sampled voltage of the analog input signal at a sampling instant for processing by other circuitry, in response to a track signal that alternates with a hold signal. Preferably, the track-and-hold circuit includes a bi-directional current source that sources and sinks current through a first output node and a second output node, a unity gain amplifier that is coupled to first and second output nodes of the bi-directional current source and that receives the analog input signal, a resistor coupled to an output of the unity gain amplifier, and a capacitor coupled between the resistor and ground. Of interest, however, is the bi-directional current source, which includes a differential input circuit that is adapted to receive the track signal and the hold signal and that is coupled to the first and second output nodes and an RC network that is coupled to the differential input circuit. The RC network receives the analog input signal and is scaled to change the location of a zero to reduce the signal-dependence of the sampling instant.
摘要:
A track-and-hold or sample-and-hold (S/H) circuit for an analog-to-digital converter (ADC) is provided. A difference between the disclosed S/H circuit and conventional S/H circuits is the use of a peaking circuit. This peaking circuit generally provides increased current to switching transistor when transitioning between track and hold which can increase the Spurious-Free Dynamic Range (SFDR) as low frequencies, by as much as 15dB.