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公开(公告)号:US20120091574A1
公开(公告)日:2012-04-19
申请号:US12904506
申请日:2010-10-14
申请人: Chih-Wei LIN , Ming-Da CHENG , Wen-Hsiung LU , Meng-Wei CHOU , Hung-Jui KUO , Chung-Shi LIU
发明人: Chih-Wei LIN , Ming-Da CHENG , Wen-Hsiung LU , Meng-Wei CHOU , Hung-Jui KUO , Chung-Shi LIU
IPC分类号: H01L23/48 , H01L21/768
CPC分类号: H01L24/13 , H01L24/03 , H01L24/05 , H01L24/11 , H01L2224/0341 , H01L2224/0345 , H01L2224/03452 , H01L2224/03462 , H01L2224/03464 , H01L2224/0361 , H01L2224/03912 , H01L2224/0401 , H01L2224/04042 , H01L2224/05073 , H01L2224/05166 , H01L2224/05181 , H01L2224/05187 , H01L2224/05559 , H01L2224/05564 , H01L2224/05647 , H01L2224/1132 , H01L2224/1145 , H01L2224/11452 , H01L2224/11462 , H01L2224/11464 , H01L2224/11472 , H01L2224/13006 , H01L2224/13007 , H01L2224/13017 , H01L2224/13023 , H01L2224/13147 , H01L2224/16 , H01L2224/48 , H01L2924/00014 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01019 , H01L2924/01024 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01038 , H01L2924/0104 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/1305 , H01L2924/1306 , H01L2924/14 , H01L2924/04941 , H01L2924/04953 , H01L2924/01028 , H01L2924/01044 , H01L2924/01025 , H01L2924/01022 , H01L2924/01032 , H01L2924/00 , H01L2224/05552
摘要: The invention relates to a bump structure of a semiconductor device. An exemplary structure for a semiconductor device comprises a substrate; a contact pad over the substrate; a passivation layer extending over the substrate having an opening over the contact pad; and a conductive pillar over the opening of the passivation layer, wherein the conductive pillar comprises an upper portion substantially perpendicular to a surface of the substrate and a lower portion having tapered sidewalls.
摘要翻译: 本发明涉及半导体器件的凸块结构。 半导体器件的示例性结构包括衬底; 衬底上的接触垫; 钝化层,其在所述衬底上延伸,在所述接触焊盘上具有开口; 以及在所述钝化层的开口上的导电柱,其中所述导电柱包括基本上垂直于所述衬底的表面的上部和具有锥形侧壁的下部。
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2.SEMICONDUCTOR DEVICE HAVING UNDER-BUMP METALLIZATION (UBM) STRUCTURE AND METHOD OF FORMING THE SAME 审中-公开
标题翻译: 具有底层金属化(UBM)结构的半导体器件及其形成方法公开(公告)号:US20120098124A1
公开(公告)日:2012-04-26
申请号:US13033780
申请日:2011-02-24
申请人: Yi-Wen WU , Hung-Jui KUO , Chien Ling HWANG , Chung-Shi LIU
发明人: Yi-Wen WU , Hung-Jui KUO , Chien Ling HWANG , Chung-Shi LIU
IPC分类号: H01L23/498 , H01L21/28
CPC分类号: H01L24/11 , H01L24/03 , H01L24/05 , H01L24/13 , H01L2224/03424 , H01L2224/0345 , H01L2224/03462 , H01L2224/03464 , H01L2224/0347 , H01L2224/0361 , H01L2224/03901 , H01L2224/03912 , H01L2224/0401 , H01L2224/05018 , H01L2224/05027 , H01L2224/05147 , H01L2224/05166 , H01L2224/05181 , H01L2224/05187 , H01L2224/05559 , H01L2224/05564 , H01L2224/05572 , H01L2224/05655 , H01L2224/11462 , H01L2224/1147 , H01L2224/11849 , H01L2224/13006 , H01L2224/13111 , H01L2924/00013 , H01L2924/00014 , H01L2924/01013 , H01L2924/01019 , H01L2924/01023 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01073 , H01L2924/01074 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/014 , H01L2924/1305 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/01046 , H01L2924/01028 , H01L2924/0105 , H01L2924/0103 , H01L2924/01083 , H01L2924/01049 , H01L2924/01051 , H01L2224/13099 , H01L2224/13599 , H01L2224/05599 , H01L2224/05099 , H01L2224/29099 , H01L2224/29599 , H01L2924/00 , H01L2224/05552
摘要: A semiconductor device has a UBM (under-bump metallization) structure underlying and electrically connected to a solder bump. The UBM structure has a first metallization layer with a first cross-sectional dimension d1, a second metallization layer with a second cross-sectional dimension d2 formed on the first metallization layer, and a third metallization layer with a third cross-sectional dimension d3 formed on the second metallization layer, in which d1 is greater than d3, and d3 is greater than d2.
摘要翻译: 半导体器件具有下面的并且与焊料凸块电连接的UBM(凸点下金属化)结构。 UBM结构具有第一横截面尺寸d1的第一金属化层,形成在第一金属化层上的第二横截面尺寸d2的第二金属化层,以及形成第三横截面尺寸d3的第三金属化层 在第二金属化层上,其中d1大于d3,d3大于d2。
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公开(公告)号:US20130034956A1
公开(公告)日:2013-02-07
申请号:US13198767
申请日:2011-08-05
申请人: Yi-Yang LEI , Hung-Jui KUO , Chung-Shi LIU , Mirng-Ji LII , Chen-Hua YU
发明人: Yi-Yang LEI , Hung-Jui KUO , Chung-Shi LIU , Mirng-Ji LII , Chen-Hua YU
IPC分类号: H01L21/28
CPC分类号: H01L24/11 , H01L23/3171 , H01L23/3192 , H01L24/02 , H01L24/05 , H01L24/13 , H01L2224/0239 , H01L2224/0401 , H01L2224/05024 , H01L2224/05569 , H01L2224/05647 , H01L2224/05655 , H01L2224/05666 , H01L2224/05681 , H01L2224/05687 , H01L2224/11334 , H01L2224/11849 , H01L2224/119 , H01L2224/1191 , H01L2224/131 , H01L2224/13111 , H01L2924/00014 , H01L2924/10253 , H01L2924/12042 , H01L2924/181 , H01L2924/01029 , H01L2924/01013 , H01L2924/01028 , H01L2924/014 , H01L2924/01047 , H01L2224/1181 , H01L2924/04953 , H01L2924/04941 , H01L2924/00 , H01L2224/05552
摘要: A method of forming wafer-level chip scale packaging solder bumps on a wafer substrate involves cleaning the surface of the solder bumps using a laser to remove any residual molding compound from the surface of the solder bumps after the solder bumps are reflowed and a liquid molding compound is applied and cured.
摘要翻译: 在晶片衬底上形成晶片级芯片级封装焊料凸块的方法包括使用激光清洗焊料凸块的表面,以在焊料凸点回流之后从焊料凸块的表面去除残留的模塑料,并且液态模塑 化合物被施用和固化。
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