公开(公告)号：US20120153439A1

公开(公告)日：2012-06-21

申请号：US13102204

申请日：2011-05-06

申请人： Hideto Sugawara ,  Masaaki Onomura

发明人： Hideto Sugawara ,  Masaaki Onomura

IPC分类号： H01L29/20 ,  H01L21/20

CPC分类号： H01L33/0025 ,  H01L21/02381 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02661 ,  H01L29/2003 ,  H01L33/007

摘要： According to one embodiment, stacked layers of a nitride semiconductor include a substrate, a single crystal layer and a nitride semiconductor layer. The substrate does not include a nitride semiconductor and has a protrusion on a major surface. The single crystal layer is provided directly on the major surface of the substrate to cover the protrusion, and includes a crack therein. The nitride semiconductor layer is provided on the single crystal layer.

摘要翻译： 根据一个实施例，氮化物半导体的堆叠层包括衬底，单晶层和氮化物半导体层。 基板不包括氮化物半导体，并且在主表面上具有突起。 单晶层直接设置在基板的主表面上以覆盖突起，并且在其中包括裂纹。 氮化物半导体层设置在单晶层上。

公开(公告)号：US07333523B2

公开(公告)日：2008-02-19

申请号：US11484006

申请日：2006-07-11

申请人： Akira Tanaka ,  Hideto Sugawara ,  Chie Hongo ,  Yoshiyuki Harada ,  Masaaki Onomura

发明人： Akira Tanaka ,  Hideto Sugawara ,  Chie Hongo ,  Yoshiyuki Harada ,  Masaaki Onomura

IPC分类号： H01S5/00

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01S5/2009 ,  H01S5/22 ,  H01S5/2214 ,  H01S5/3054

摘要： A semiconductor laser device comprising: a first cladding layer of a first conductivity type; an active layer provided on the first cladding layer and having a quantum well structure; an overflow blocking layer of a second conductivity type provided on the overflow blocking layer. The active layer includes a region having an impurity concentration is 3×1017 cm−3 or more and having a thickness of 30 nm or less between the overflow blocking layer and a well layer in the active layer closet to the overflow blocking layer.

摘要翻译： 一种半导体激光装置，包括：第一导电类型的第一包层; 设置在所述第一包层上并具有量子阱结构的有源层; 设置在溢出阻挡层上的第二导电类型的溢出阻挡层。 有源层包括杂质浓度为3×10 -3 -3 -3以上并且在溢流阻挡层和阱层之间具有30nm或更小的厚度的区域 在活动层衣柜中到溢出阻挡层。

公开(公告)号：US20070009000A1

公开(公告)日：2007-01-11

申请号：US11484006

申请日：2006-07-11

申请人： Akira Tanaka ,  Hideto Sugawara ,  Chie Hongo ,  Yoshiyuki Harada ,  Masaaki Onomura

发明人： Akira Tanaka ,  Hideto Sugawara ,  Chie Hongo ,  Yoshiyuki Harada ,  Masaaki Onomura

IPC分类号： H01S5/00

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01S5/2009 ,  H01S5/22 ,  H01S5/2214 ,  H01S5/3054

摘要： A semiconductor laser device comprising: a first cladding layer of a first conductivity type; an active layer provided on the first cladding layer and having a quantum well structure; an overflow blocking layer of a second conductivity type provided on the overflow blocking layer. The active layer includes a region having an impurity concentration is 3×1017 cm−3 or more and having a thickness of 30 nm or less between the overflow blocking layer and a well layer in the active layer closet to the overflow blocking layer.

摘要翻译： 一种半导体激光装置，包括：第一导电类型的第一包层; 设置在所述第一包层上并具有量子阱结构的有源层; 设置在溢出阻挡层上的第二导电类型的溢出阻挡层。 有源层包括杂质浓度为3×10 -3 -3 -3以上并且在溢流阻挡层和阱层之间具有30nm或更小的厚度的区域 在活动层衣柜中到溢出阻挡层。

公开(公告)号：US08502350B2

公开(公告)日：2013-08-06

申请号：US13102204

申请日：2011-05-06

申请人： Hideto Sugawara ,  Masaaki Onomura

发明人： Hideto Sugawara ,  Masaaki Onomura

IPC分类号： H01L29/20

CPC分类号： H01L33/0025 ,  H01L21/02381 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02661 ,  H01L29/2003 ,  H01L33/007

摘要： According to one embodiment, stacked layers of a nitride semiconductor include a substrate, a single crystal layer and a nitride semiconductor layer. The substrate does not include a nitride semiconductor and has a protrusion on a major surface. The single crystal layer is provided directly on the major surface of the substrate to cover the protrusion, and includes a crack therein. The nitride semiconductor layer is provided on the single crystal layer.

摘要翻译： 根据一个实施例，氮化物半导体的堆叠层包括衬底，单晶层和氮化物半导体层。 基板不包括氮化物半导体，并且在主表面上具有突起。 单晶层直接设置在基板的主表面上以覆盖突起，并且在其中包括裂纹。 氮化物半导体层设置在单晶层上。

公开(公告)号：US5780873A

公开(公告)日：1998-07-14

申请号：US689689

申请日：1996-08-13

申请人： Kazuhiko Itaya ,  Masahiro Yamamoto ,  Masaaki Onomura ,  Hidetoshi Fujimoto ,  Genichi Hatakoshi ,  Hideto Sugawara ,  Masayuki Ishikawa ,  John Rennie ,  Shinji Saito

发明人： Kazuhiko Itaya ,  Masahiro Yamamoto ,  Masaaki Onomura ,  Hidetoshi Fujimoto ,  Genichi Hatakoshi ,  Hideto Sugawara ,  Masayuki Ishikawa ,  John Rennie ,  Shinji Saito

IPC分类号： H01L27/15 ,  H01L33/06 ,  H01L33/08 ,  H01L33/14 ,  H01L33/16 ,  H01L33/20 ,  H01L33/32 ,  H01S5/00 ,  H01S5/02 ,  H01S5/323 ,  H01S5/343 ,  H01S5/40 ,  H01L33/00 ,  H01L29/04 ,  H01L31/036

CPC分类号： H01L33/32 ,  B82Y20/00 ,  H01L27/156 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/16 ,  H01S5/0215 ,  H01S5/34333 ,  H01S5/0202 ,  H01S5/0208 ,  H01S5/021 ,  H01S5/0213 ,  H01S5/0217 ,  H01S5/0218 ,  H01S5/2231 ,  H01S5/2232 ,  H01S5/3202 ,  H01S5/32391 ,  H01S5/34326 ,  H01S5/4043 ,  H01S5/4087

摘要： A semiconductor light-emitting device comprises a semiconductor light-emitting device section of a hexagonal type; and an electrically conductive semiconductor substrate of a cubic type combined into the semiconductor light-emitting device, and having an orientation of its cleavage facet conformed to an orientation of the cleavage facet of one of semiconductor layers forming the semiconductor light-emitting device section. The substrate of the cubic type is cleaved so that the semiconductor light-emitting device section of the hexagonal type is induced to be cleaved, and that a mirror surface can be easily formed.

摘要翻译： 半导体发光器件包括六边形的半导体发光器件部分; 以及组合到半导体发光器件中的立方体的导电半导体衬底，并且其解理面的取向符合形成半导体发光器件部分的半导体层之一的解理面的取向。 立方体的基板被切割，使得六方型的半导体发光器件部分被诱导被切割，并且可以容易地形成镜面。

公开(公告)号：US20070086496A1

公开(公告)日：2007-04-19

申请号：US11357408

申请日：2006-02-21

申请人： Akira Tanaka ,  Chie Hongo ,  Yoshiyuki Harada ,  Hideto Sugawara ,  Masaaki Onomura ,  Hiroshi Katsuno

发明人： Akira Tanaka ,  Chie Hongo ,  Yoshiyuki Harada ,  Hideto Sugawara ,  Masaaki Onomura ,  Hiroshi Katsuno

IPC分类号： H01S5/00

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01L33/02 ,  H01L33/06 ,  H01L33/32 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01S5/2009 ,  H01S5/22 ,  H01S5/3216 ,  H01S5/3407 ,  H01L2924/00014

摘要： A semiconductor light emitting device comprises: a first cladding layer made of nitride semiconductor of a first conductivity type; an active layer provided on the first cladding layer, the active layer including a first barrier layer made of nitride semiconductor, a second barrier layer made of nitride semiconductor, and a well layer made of nitride semiconductor, the well layer being provided between the first barrier layer and the second barrier layer; and a second cladding layer provided on the active layer, the second cladding layer being made of nitride semiconductor of a second conductivity type. The first and second barrier layers and the well layer contain indium. At least one of the first barrier layer and the second barrier layer has a thickness of 30 nm or more.

摘要翻译： 一种半导体发光器件包括：由第一导电类型的氮化物半导体制成的第一覆层; 设置在所述第一包层上的有源层，所述有源层包括由氮化物半导体制成的第一势垒层，由氮化物半导体制成的第二阻挡层，以及由氮化物半导体制成的阱层，所述阱层设置在所述第一栅极 层和第二阻挡层; 以及设置在所述有源层上的第二覆层，所述第二覆层由第二导电类型的氮化物半导体制成。 第一和第二阻挡层和阱层含有铟。 第一阻挡层和第二阻挡层中的至少一个具有30nm以上的厚度。

公开(公告)号：US5696389A

公开(公告)日：1997-12-09

申请号：US402659

申请日：1995-03-13

申请人： Masayuki Ishikawa ,  Hideto Sugawara ,  Yukie Nishikawa ,  Masaaki Onomura ,  Shinji Saito ,  Peter James Parbrook ,  Genichi Hatakoshi ,  Koichi Nitta ,  John Rennie ,  Hiroaki Yoshida ,  Atsushi Kamata

发明人： Masayuki Ishikawa ,  Hideto Sugawara ,  Yukie Nishikawa ,  Masaaki Onomura ,  Shinji Saito ,  Peter James Parbrook ,  Genichi Hatakoshi ,  Koichi Nitta ,  John Rennie ,  Hiroaki Yoshida ,  Atsushi Kamata

IPC分类号： H01L27/15 ,  H01L33/06 ,  H01L33/08 ,  H01L33/10 ,  H01L33/16 ,  H01L33/20 ,  H01L33/28 ,  H01L33/32 ,  H01L33/38 ,  H01L33/40 ,  H01L33/56 ,  H01S5/042 ,  H01S5/183 ,  H01S5/40 ,  H01L29/41 ,  H01S3/19

CPC分类号： H01L33/38 ,  B82Y20/00 ,  H01L33/20 ,  H01S5/18341 ,  H01L27/153 ,  H01L33/0079 ,  H01L33/145 ,  H01L33/382 ,  H01S2301/203 ,  H01S5/0422 ,  H01S5/0425 ,  H01S5/1835 ,  H01S5/347 ,  H01S5/4087

摘要： A light-emitting semiconductor device comprising an n-type cladding layer provided on a surface of a substrate and having concentric first and second parts, a first electrode mounted on the first part of the n-type cladding layer, a p-type cladding layer provided above the surface of the substrate and surrounding the first electrode and the second part of the n-type cladding layer, and a second electrode provided on the p-type cladding layer.

摘要翻译： 一种发光半导体器件，包括设置在基板的表面上并具有同心的第一和第二部分的n型覆层，安装在n型覆层的第一部分上的第一电极，p型覆层 设置在基板的表面上并且包围n型包覆层的第一电极和第二部分，以及设置在p型覆层上的第二电极。

公开(公告)号：US20080050854A1

公开(公告)日：2008-02-28

申请号：US11875767

申请日：2007-10-19

申请人： Hideto Sugawara ,  Yukio Watanabe ,  Hirohisa Abe ,  Kuniaki Konno

发明人： Hideto Sugawara ,  Yukio Watanabe ,  Hirohisa Abe ,  Kuniaki Konno

IPC分类号： H01L21/02

CPC分类号： H01L33/20 ,  H01L33/0079 ,  H01L33/16 ,  H01L33/22 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/10155 ,  H01L2924/00014 ,  H01L2924/00

摘要： A high-luminance light emitting element is manufactured by a method comprising: forming a light emitting layer on a first surface of a GaP substrate including the first surface and a second surface opposed to the first surface and having an area smaller than the first area, the light emitting layer emitting light of a wavelength λ permitted to pass through the GaP substrate; forming a plurality of side surfaces on the GaP substrate to be respectively aslant by substantially the same angle to become narrower toward the second surface; and forming a plurality of depressions and protrusions as high as 0.1λ to 3λ on the side surfaces.

公开(公告)号：US07221002B2

公开(公告)日：2007-05-22

申请号：US10958911

申请日：2004-10-04

申请人： Haruhiko Okazaki ,  Hideto Sugawara

发明人： Haruhiko Okazaki ,  Hideto Sugawara

IPC分类号： H01L29/22

CPC分类号： H01L33/40 ,  H01L24/73 ,  H01L33/32 ,  H01L33/405 ,  H01L2224/05001 ,  H01L2224/05023 ,  H01L2224/0508 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/16145 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/01019 ,  H01L2924/12041 ,  H01L2924/3025 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/45099

摘要： An InGaN active layer is formed on a sapphire substrate. A p-side electrode is formed on the InGaN active layer to supply an electric current to this InGaN active layer. The p-side electrode includes {circle around (1)} an Ni layer for forming an ohmic contact with a p-GaN layer, {circle around (2)} an Mo layer having a barrier function of preventing diffusion of impurities, {circle around (3)} an Al layer as a high-reflection electrode, {circle around (4)} a Ti layer having a barrier function, and {circle around (5)} an Au layer for improving the contact with a submount on a lead frame. The p-side electrode having this five-layered structure realizes an ohmic contact and high reflectance at the same time.

摘要翻译： 在蓝宝石衬底上形成InGaN有源层。 在InGaN有源层上形成p侧电极，以向该InGaN有源层提供电流。 p侧电极包括{圆周（1是用于与p-GaN层形成欧姆接触的Ni层，{圆周（2个具有防止杂质扩散的阻挡功能的Mo层，{周围（3个 Al层作为高反射电极{圆周（4个具有阻挡功能的Ti层）和{圆周（5个Au层，用于改善与引线框架上的基座的接触的Au层，具有该反射电极的p侧电极 五层结构同时实现欧姆接触和高反射率。

公开(公告)号：US07138664B2

公开(公告)日：2006-11-21

申请号：US10946668

申请日：2004-09-22

申请人： Haruhiko Okazaki ,  Hideto Sugawara

发明人： Haruhiko Okazaki ,  Hideto Sugawara

IPC分类号： H01L33/00

CPC分类号： H01L33/40 ,  H01L24/73 ,  H01L33/32 ,  H01L33/405 ,  H01L2224/05001 ,  H01L2224/05023 ,  H01L2224/0508 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/16145 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/01019 ,  H01L2924/12041 ,  H01L2924/3025 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/45099

摘要： An InGaN active layer is formed on a sapphire substrate. A p-side electrode is formed on the InGaN active layer to supply an electric current to this InGaN active layer. The p-side electrode includes {circle around (1)} an Ni layer for forming an ohmic contact with a p-GaN layer, {circle around (2)} an Mo layer having a barrier function of preventing diffusion of impurities, {circle around (3)} an Al layer as a high-reflection electrode, {circle around (4)} a Ti layer having a barrier function, and {circle around (5)} an Au layer for improving the contact with a submount on a lead frame. The p-side electrode having this five-layered structure realizes an ohmic contact and high reflectance at the same time.

摘要翻译： 在蓝宝石衬底上形成InGaN有源层。 在InGaN有源层上形成p侧电极，以向该InGaN有源层提供电流。 p侧电极包括{圆周（1是用于与p-GaN层形成欧姆接触的Ni层，{圆周（2个具有防止杂质扩散的阻挡功能的Mo层，{周围（3个 Al层作为高反射电极{圆周（4个具有阻挡功能的Ti层）和{圆周（5个Au层，用于改善与引线框架上的基座的接触的Au层，具有该反射电极的p侧电极 五层结构同时实现欧姆接触和高反射率。