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    Method for producing a contact hole in a semiconductor device using reflow and etch
    1.
    发明授权
    Method for producing a contact hole in a semiconductor device using reflow and etch 失效
    使用回流和蚀刻在半导体器件中制造接触孔的方法

    公开(公告)号：US5552342A

    公开(公告)日：1996-09-03

    申请号：US293247

    申请日：1994-08-19

    申请人： Hiroyasu Itou ,  Tosiyuki Morisita ,  Takanori Simamoto

    发明人： Hiroyasu Itou ,  Tosiyuki Morisita ,  Takanori Simamoto

    IPC分类号： H01L21/28 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/768

    CPC分类号： H01L21/76802 ,  Y10S438/978

    摘要： An LOCOS film is formed on an Si substrate, a gate oxide film and a gate electrode are formed thereon, and source/drain impurities are ion implanted into the Si substrate using the gate electrode as a mask. Then, a BPSG film is formed at a film density of 1.8 g/cm.sup.3 or more. A recessed part is formed in the BPSG film by the first photolithographic process with an etching depth of 20% or more but under 100% of the thickness of the BPSG film. Thereafter, the BPSG film is fluidized by reflow treatment to shape a part which is to be a contact hole into a funnel with an "upwards convex" curvature. Finally, the part formed into the funnel is etched to make a contact hole. As a result, wiring disconnection within the contact hole can be prevented, the diffusion depth controllability for the source/drain impurities can be improved, and the fall in the impurity density in the source/drain surface can be prevented.

    摘要翻译： 在Si衬底上形成LOCOS膜，在其上形成栅极氧化膜和栅电极，并且使用栅电极作为掩模将源/漏杂质离子注入到Si衬底中。 然后，以1.8g / cm 3以上的膜密度形成BPSG膜。 通过第一光刻工艺在BPSG膜中形成凹陷部分，其蚀刻深度为BPSG膜的厚度的20％以上但低于100％。 此后，通过回流处理将BPSG膜流化，将作为接触孔的部分成形为具有“向上凸起”曲率的漏斗。 最后，将形成漏斗的部分蚀刻以形成接触孔。 结果，可以防止接触孔内的布线断开，可以提高源极/漏极杂质的扩散深度可控性，并且可以防止源极/漏极表面中的杂质浓度的下降。

    Recycling system and recycling method
    3.
    发明授权
    Recycling system and recycling method 失效
    回收系统和回收利用方法

    公开(公告)号：US06529788B1

    公开(公告)日：2003-03-04

    申请号：US09460763

    申请日：1999-12-14

    申请人： Tatsuo Tani ,  Kiyoshi Sakai ,  Yasushi Akiba ,  Shohzoh Miyawaki ,  Teruzo Hasumi ,  Mitsuaki Urakawa ,  Tetsuo Yamaoka ,  Hisashi Ishijima ,  Hiroyasu Itou

    发明人： Tatsuo Tani ,  Kiyoshi Sakai ,  Yasushi Akiba ,  Shohzoh Miyawaki ,  Teruzo Hasumi ,  Mitsuaki Urakawa ,  Tetsuo Yamaoka ,  Hisashi Ishijima ,  Hiroyasu Itou

    IPC分类号： G06F1900

    CPC分类号： G06Q10/06 ,  B29B2017/0089 ,  G06Q10/0875 ,  Y02P90/86

    摘要： A recycling system has a recycle information memory database for storing as recycle information, the information on all reutilizable products such as products produced or used under the management of the system, products treated as wastes, and products currently being used in the market. A virtual recycle product designing section is provided for estimating times when the reutilizable products are recovered as products usable for recycling as well as their volumes, based on the recycle information stored in the recycle information memory database. A production scheduling section is provided for setting a production schedule of a recycle product using the reutilizable products based on the estimated times and volumes.

    摘要翻译： 回收系统具有用于存储为回收信息的回收信息存储数据库，关于系统管理下生产或使用的产品，废弃物处理产品以及目前市场上使用的产品的所有可再利用产品的信息。 提供虚拟回收产品设计部分，用于基于存储在再循环信息存储器数据库中的回收信息来估计可再利用产品被回收作为可回收利用的产品及其体积的时间。 提供生产调度部分，用于基于估计的时间和体积来设置使用可再生产品的再循环产品的生产计划。

    Method for making FET having reduced oxidation inductive stacking fault
    10.
    发明授权
    Method for making FET having reduced oxidation inductive stacking fault 失效
    制造具有减少的氧化感应堆垛层错的FET的方法

    公开(公告)号：US5677208A

    公开(公告)日：1997-10-14

    申请号：US410373

    申请日：1995-03-24

    申请人： Hiroyasu Itou ,  Hideya Inagaki

    发明人： Hiroyasu Itou ,  Hideya Inagaki

    IPC分类号： H01L29/78 ,  H01L21/225 ,  H01L21/265 ,  H01L21/322 ,  H01L21/336 ,  H01L21/8234 ,  H01L23/544

    CPC分类号： H01L23/544 ,  H01L21/2253 ,  H01L21/3225 ,  H01L21/823462 ,  H01L2223/54426 ,  H01L2223/54453 ,  H01L2223/5446 ,  H01L2924/0002

    摘要： An improved manufacturing method for a semiconductor device, which can reduce process inductive fault such as oxidation inductive stacking fault (OSF) and contribute to the improvement of the electric characteristics of the semiconductor device, is disclosed. A thermal oxide film is formed on a semiconductor substrate, then a nitride film is formed and a medium temperature heat treatment is provided to the semiconductor substrate within a temperature range from 600.degree. C. to 1,000.degree. C., whereby an interstitial oxygen concentration can be lowered. Subsequently, ion implantation, etc. are provided as a well region forming process, and a drive-in process is performed by means of a high temperature heat treatment. At this time, ion implantation dose is set to 9.times.10.sup.13 �cm.sup.-2 ! or less, and the temperature of the heat treatment is lowered or the duration of the teat treatment is shortened. After this, an element separation layer process is performed, and a gate oxide film, a gate electrode, a source/drain layer, a CVD oxide film, a contact hole and a metal wire are formed.

    摘要翻译： 公开了一种用于半导体器件的改进的制造方法，其可以减少诸如氧化感应堆垛层错（OSF）的处理感应故障并且有助于提高半导体器件的电特性。 在半导体衬底上形成热氧化膜，然后形成氮化物膜，并在600℃至1000℃的温度范围内向半导体衬底提供中温热处理，由此间隙氧浓度可以 被降低 随后，提供离子注入等作为阱区形成工艺，并且通过高温热处理进行驱入工艺。 此时，离子注入剂量设定为9×10 13 [cm -2]以下，热处理温度降低或乳头处理的持续时间缩短。 之后，进行元件分离层工艺，形成栅极氧化膜，栅电极，源/漏层，CVD氧化膜，接触孔和金属线。