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    Method of manufacturing semiconductor device and substrate processing method
    3.
    发明授权
    Method of manufacturing semiconductor device and substrate processing method 有权
    制造半导体器件的方法和衬底处理方法

    公开(公告)号：US09460911B2

    公开(公告)日：2016-10-04

    申请号：US14706221

    申请日：2015-05-07

    申请人： Hitachi Kokusai Electric Inc.

    发明人： Yoshiro Hirose ,  Atsushi Sano ,  Yugo Orihashi ,  Yoshitomo Hashimoto ,  Satoshi Shimamoto

    IPC分类号： H01L21/02 ,  H01L21/31 ,  C23C16/36 ,  C23C16/455

    CPC分类号： H01L21/02126 ,  C23C16/36 ,  C23C16/45523 ,  H01L21/02167 ,  H01L21/02172 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/02183 ,  H01L21/02186 ,  H01L21/02189 ,  H01L21/02211 ,  H01L21/0228 ,  H01L21/31

    摘要： A method of manufacturing a semiconductor device for forming a thin film having characteristics of low permittivity, high etching resistance and high leak resistance is provided. The method includes: forming a film containing a predetermined element, oxygen, carbon and nitrogen on a substrate by performing a cycle a predetermined number of times. The cycle includes: (a) supplying a source gas containing the predetermined element and a halogen element to the substrate; (b) supplying a first reactive gas containing three elements including carbon, nitrogen and hydrogen wherein a number of carbon atoms in each molecule of the first reactive gas is greater than that of nitrogen atoms in each molecule of the first reactive gas to the substrate; (c) supplying a nitriding gas as a second reactive gas to the substrate; and (d) supplying an oxidizing gas as a third reactive gas to the substrate, wherein (a) through (d) are non-simultaneously performed.

    摘要翻译： 提供一种制造具有低介电常数，高耐腐蚀性和高耐漏性特性的薄膜形成用半导体器件的方法。 该方法包括：通过执行预定次数的循环，在基板上形成含有预定元素，氧，碳和氮的膜。 该循环包括：（a）将含有预定元素和卤元素的源气体供应到基底; （b）提供包含碳，氮和氢的三种元素的第一反应气体，其中第一反应气体的每个分子中的多个碳原子大于第一反应气体到基底的每个分子中的氮原子的碳原子数; （c）将氮化气体作为第二反应气体供应到所述基板; 和（d）将作为第三反应气体的氧化气体供给到所述基板，其中（a）〜（d）不是同时进行的。

    Method of Manufacturing Semiconductor Device and Substrate Processing Method
    8.
    发明申请
    Method of Manufacturing Semiconductor Device and Substrate Processing Method 审中-公开
    半导体器件制造方法及基板加工方法

    公开(公告)号：US20160365243A1

    公开(公告)日：2016-12-15

    申请号：US15248833

    申请日：2016-08-26

    申请人： Hitachi Kokusai Electric Inc.

    发明人： Yoshiro HIROSE ,  Atsushi SANO ,  Yugo Orihashi ,  Yoshitomo HASHIMOTO ,  Satoshi SHIMAMOTO

    IPC分类号： H01L21/02

    CPC分类号： H01L21/02126 ,  C23C16/36 ,  C23C16/45523 ,  H01L21/02167 ,  H01L21/02172 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/02183 ,  H01L21/02186 ,  H01L21/02189 ,  H01L21/02211 ,  H01L21/0228 ,  H01L21/31

    摘要： A method of manufacturing a semiconductor device for forming a thin film having low permittivity, high etching resistance and high leak resistance is provided. The method includes: forming a film containing a predetermined element, oxygen, carbon and nitrogen on a substrate by performing a cycle a predetermined number of times. The cycle includes: (a) supplying a source gas containing the predetermined element and a halogen element to the substrate; (b) supplying a first reactive gas containing the three elements including carbon, nitrogen and hydrogen wherein a number of carbon atoms in each molecule of the first reactive gas is greater than that of nitrogen atoms in each molecule of the first reactive gas to the substrate; (c) supplying a nitriding gas as a second reactive gas to the substrate; and (d) supplying an oxidizing gas as a third reactive gas to the substrate, wherein (a) through (d) are non-simultaneously performed.

    摘要翻译： 提供一种制造具有低介电常数，高耐腐蚀性和高耐漏性的薄膜形成用半导体器件的方法。 该方法包括：通过执行预定次数的循环，在基板上形成含有预定元素，氧，碳和氮的膜。 该循环包括：（a）将含有预定元素和卤元素的源气体供应到基底; （b）提供含有三种元素的第一反应气体，包括碳，氮和氢，其中第一反应气体的每个分子中的多个碳原子大于第一反应气体到基体的每个分子中的氮原子的数量 ; （c）将氮化气体作为第二反应气体供应到所述基板; 和（d）将作为第三反应气体的氧化气体供给到所述基板，其中（a）〜（d）不是同时进行的。

    Method of Manufacturing Semiconductor Device, Method of Processing Substrate, Substrate Processing Apparatus and Non-Transitory Computer-Readable Recording Medium
    10.
    发明申请
    Method of Manufacturing Semiconductor Device, Method of Processing Substrate, Substrate Processing Apparatus and Non-Transitory Computer-Readable Recording Medium 有权
    半导体器件的制造方法，基板的处理方法，基板处理装置以及非暂时计算机可读记录介质

    公开(公告)号：US20130149873A1

    公开(公告)日：2013-06-13

    申请号：US13708966

    申请日：2012-12-08

    申请人： HITACHI KOKUSAI ELECTRIC INC.

    发明人： Yoshiro Hirose ,  Atsushi Sano ,  Yugo Orihashi ,  Yoshitomo Hashimoto ,  Satoshi Shimamoto

    IPC分类号： H01L21/31

    CPC分类号： H01L21/02126 ,  C23C16/36 ,  C23C16/45523 ,  H01L21/02167 ,  H01L21/02172 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/02183 ,  H01L21/02186 ,  H01L21/02189 ,  H01L21/02211 ,  H01L21/0228 ,  H01L21/31

    摘要： A thin film including characteristics of low permittivity, high etching resistance and high leak resistance is to be formed. A method of manufacturing a semiconductor device includes forming a thin film containing a predetermined element on a substrate by performing a cycle a predetermined number of times, the cycle including: forming a first layer containing the predetermined element, nitrogen and carbon by alternately performing supplying a source gas containing the predetermined element and a halogen element to the substrate and supplying a first reactive gas containing three elements including the carbon, the nitrogen and hydrogen and having a composition wherein a number of carbon atoms is greater than that of nitrogen atoms to the substrate a predetermined number of times; and forming a second layer by supplying a second reactive gas different from the source gas and the first reactive gas to the substrate to modify the first layer.

    摘要翻译： 要形成具有低介电常数，高耐腐蚀性和高耐漏性等特性的薄膜。 一种制造半导体器件的方法包括：通过执行预定次数的循环，在衬底上形成含有预定元素的薄膜，该循环包括：通过交替地提供含有预定元素，氮和碳的第一层， 含有预定元素的源气体和卤素元素提供给基底并提供含有三种元素的第一反应气体，所述三种元素包括碳，氮和氢，并且具有其中多个碳原子数大于氮原子的基团的组成 预定次数; 以及通过将不同于所述源气体和所述第一反应气体的第二反应气体供应到所述衬底来形成第二层，以修饰所述第一层。