摘要:
A method includes forming an under-bump metallurgy (UBM) layer overlying a substrate, and forming a mask overlying the UBM layer. The mask covers a first portion of the UBM layer, and a second portion of the UBM layer is exposed through an opening in the mask. A metal bump is formed in the opening and on the second portion of the UBM layer. The mask is then removed. A laser removal is performed to remove a part of the first portion of the UBM layer and to form an UBM.
摘要:
A method includes forming an under-bump metallurgy (UBM) layer overlying a substrate, and forming a mask overlying the UBM layer. The mask covers a first portion of the UBM layer, and a second portion of the UBM layer is exposed through an opening in the mask. A metal bump is formed in the opening and on the second portion of the UBM layer. The mask is then removed. A laser removal is performed to remove a part of the first portion of the UBM layer and to form an UBM.
摘要:
An integrated circuit structure includes a work piece selected from the group consisting of a semiconductor chip and a package substrate. The work piece includes a plurality of under bump metallurgies (UBMs) distributed on a major surface of the work piece; and a plurality of metal bumps, with each of the plurality of metal bumps directly over, and electrically connected to, one of the plurality of UBMs. The plurality of UBMs and the plurality of metal bumps are allocated with an overlay offset, with at least some of the plurality of UBMs being misaligned with the respective overlying ones of the plurality of metal bumps.
摘要:
A system and method for forming photoresists over semiconductor substrates is provided. An embodiment comprises a photoresist with a concentration gradient. The concentration gradient may be formed by using a series of dry film photoresists, wherein each separate dry film photoresist has a different concentration. The separate dry film photoresists may be formed separately and then placed onto the semiconductor substrate before being patterned. Once patterned, openings through the photoresist may have a tapered sidewall, allowing for a better coverage of the seed layer and a more uniform process to form conductive materials through the photoresist.
摘要:
A method of forming wafer-level chip scale packaging solder bumps on a wafer substrate involves cleaning the surface of the solder bumps using a laser to remove any residual molding compound from the surface of the solder bumps after the solder bumps are reflowed and a liquid molding compound is applied and cured.
摘要:
An integrated circuit structure includes a work piece selected from the group consisting of a semiconductor chip and a package substrate. The work piece includes a plurality of under bump metallurgies (UBMs) distributed on a major surface of the work piece; and a plurality of metal bumps, with each of the plurality of metal bumps directly over, and electrically connected to, one of the plurality of UBMs. The plurality of UBMs and the plurality of metal bumps are allocated with an overlay offset, with at least some of the plurality of UBMs being misaligned with the respective overlying ones of the plurality of metal bumps.
摘要:
A semiconductor component formed on a semiconductor substrate is provided. The semiconductor substrate has a first surface and a second surface. The semiconductor substrate includes a plurality of devices on the first surface. A plurality of through silicon vias (TSVs) in the semiconductor substrate extends from the first surface to the second surface. A protection layer overlies the devices on the first surface of the semiconductor substrate. A plurality of active conductive pillars on the protection layer have a first height. Each of the active conductive pillars is electrically connected to at least one of the plurality of devices. A plurality of dummy conductive pillars on the protection layer have a second height. Each of the dummy conductive pillars is electrically isolated from the plurality of devices. The first height and the second height are substantially equal.
摘要:
A semiconductor component formed on a semiconductor substrate is provided. The semiconductor substrate has a first surface and a second surface. The semiconductor substrate includes a plurality of devices on the first surface. A plurality of through silicon vias (TSVs) in the semiconductor substrate extends from the first surface to the second surface. A protection layer overlies the devices on the first surface of the semiconductor substrate. A plurality of active conductive pillars on the protection layer have a first height. Each of the active conductive pillars is electrically connected to at least one of the plurality of devices. A plurality of dummy conductive pillars on the protection layer have a second height. Each of the dummy conductive pillars is electrically isolated from the plurality of devices. The first height and the second height are substantially equal.
摘要:
A system and method for forming photoresists over semiconductor substrates is provided. An embodiment comprises a photoresist with a concentration gradient. The concentration gradient may be formed by using a series of dry film photoresists, wherein each separate dry film photoresist has a different concentration. The separate dry film photoresists may be formed separately and then placed onto the semiconductor substrate before being patterned. Once patterned, openings through the photoresist may have a tapered sidewall, allowing for a better coverage of the seed layer and a more uniform process to form conductive materials through the photoresist.
摘要:
Methods and chemical solvents used for cleaning residues on metal contacts during a semiconductor device packaging process are disclosed. A chemical solvent for cleaning a residue formed on a metal contact may comprise a reactive inorganic component and a reactive organic component. The method may comprise spraying a semiconductor device with a chemical solvent at a first pressure, and spraying the semiconductor device with the chemical solvent at a second pressure less than the first pressure.