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公开(公告)号：US20190131508A1
公开(公告)日：2019-05-02
申请号：US16177805
申请日：2018-11-01
Applicant: Infineon Technologies AG
Inventor： Christian Kasztelan , Alexander Breymesser , Manfred Mengel , Andreas Niederhofer
Abstract: A thermoelectric device includes a plurality of first semiconductor mesa structures having a first conductivity type and a plurality of second semiconductor mesa structures having a second conductivity type. First semiconductor mesa structures of the plurality of first semiconductor mesa structures and second semiconductor mesa structures of the plurality of second semiconductor mesa structures are electrically connected in series. The thermoelectric device further includes a glass structure made of at least one of a borosilicate glass, boron-zinc-glass and a low transition temperature glass. The glass structure is arranged laterally between the first semiconductor mesa structures of the plurality of first semiconductor mesa structures and the second semiconductor mesa structures of the plurality of second semiconductor mesa structures. The glass structure electrically insulates the first semiconductor mesa structures of the plurality of first semiconductor mesa structures laterally from the second semiconductor mesa structures of the plurality of second semiconductor mesa structures.
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2.发明申请公开(公告)号：US20160240449A1
公开(公告)日：2016-08-18
申请号：US15095784
申请日：2016-04-11
Applicant: Infineon Technologies AG
Inventor： Joachim Mahler , Manfred Mengel , Khalil Hosseini , Franz-Peter Kalz
CPC classification number: H01L23/293 , C25D13/06 , C25D13/12 , H01L21/4825 , H01L21/56 , H01L21/565 , H01L23/3107 , H01L23/3114 , H01L23/49513 , H01L23/4952 , H01L23/49562 , H01L23/49582 , H01L23/49586 , H01L23/573 , H01L24/37 , H01L24/40 , H01L24/45 , H01L24/48 , H01L24/73 , H01L24/84 , H01L24/85 , H01L2224/2919 , H01L2224/32245 , H01L2224/37124 , H01L2224/37139 , H01L2224/37144 , H01L2224/37147 , H01L2224/40245 , H01L2224/45124 , H01L2224/45139 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/48247 , H01L2224/73263 , H01L2224/73265 , H01L2224/83191 , H01L2224/83192 , H01L2224/83801 , H01L2224/8492 , H01L2224/8592 , H01L2224/92246 , H01L2224/92247 , H01L2924/01322 , H01L2924/1301 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/181 , H01L2924/351 , H05K3/284 , H05K2203/135 , Y10T29/49144 , H01L2924/00014 , H01L2924/0665 , H01L2924/00
Abstract: A packaged component and a method for making a packaged component are disclosed. In an embodiment the packaged component includes a component carrier having a component carrier contact and a component disposed on the component carrier, the component having a component contact. The packaged component further includes a conductive connection element connecting the component carrier contact with the component contact, an insulating film disposed directly at least on one of a top surface of the component or the conductive connection element, and an encapsulant encapsulating the component carrier, the component and the enclosed conductive connection elements.
Abstract translation: 公开了封装组件和制造封装组件的方法。 在一个实施例中，封装部件包括具有部件载体接触件和设置在部件载体上的部件的部件载体，该部件具有部件接触。 封装部件还包括将部件载体接触件与部件接触件连接的导电连接元件，直接设置在部件或导电连接元件的顶表面中的至少一个上的绝缘膜，以及封装部件载体的密封剂， 组件和封闭的导电连接元件。
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3.发明授权Electronic device including a carrier and a semiconductor chip attached to the carrier and manufacturing thereof 有权电子设备包括载体和连接到载体的半导体芯片及其制造公开(公告)号：US08952545B2
公开(公告)日：2015-02-10
申请号：US13965630
申请日：2013-08-13
Applicant: Infineon Technologies AG
Inventor： Ralf Otremba , Henrik Ewe , Klaus Schiess , Manfred Mengel
IPC: H01L23/48 , H01L23/36 , H01L23/498 , H01L23/538 , H01L23/00 , H01L21/50
CPC classification number: H01L23/481 , H01L21/50 , H01L23/36 , H01L23/48 , H01L23/49816 , H01L23/49827 , H01L23/5389 , H01L24/25 , H01L24/82 , H01L24/97 , H01L2224/04105 , H01L2224/06181 , H01L2224/12105 , H01L2224/18 , H01L2224/32225 , H01L2224/73267 , H01L2224/76155 , H01L2224/82039 , H01L2224/82047 , H01L2224/82102 , H01L2224/92144 , H01L2224/9222 , H01L2224/97 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01023 , H01L2924/01024 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01087 , H01L2924/01327 , H01L2924/10329 , H01L2924/12042 , H01L2924/12044 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13062 , H01L2924/13091 , H01L2924/14 , H01L2924/15311 , H01L2924/15787 , H01L2924/181 , H01L2224/82 , H01L2924/00
Abstract: One aspect is a device including a carrier comprising a first conducting layer, a first insulating layer over the first conducting layer, and at least one first through-connection from a first face of the first insulating layer to a second face of the first insulating layer. A semiconductor chip is attached to the carrier and a second insulating layer is over the carrier and the semiconductor chip. A metal layer is over the second insulating layer. A second through-connection is through the second insulating layer electrically coupling the semiconductor chip to the metal layer. A third through-connection is through the second insulating layer electrically coupling the carrier to the metal layer.
Abstract translation: 一个方面是包括载体的器件，其包括第一导电层，在第一导电层上的第一绝缘层，以及从第一绝缘层的第一面到第一绝缘层的第二面的至少一个第一通孔连接 。 半导体芯片附着到载体上，第二绝缘层位于载体和半导体芯片之上。 金属层在第二绝缘层之上。 第二直通连接通过第二绝缘层将半导体芯片电耦合到金属层。 第三直通连接是通过第二绝缘层将载体电耦合到金属层。
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4.发明申请公开(公告)号：US20140197552A1
公开(公告)日：2014-07-17
申请号：US13742456
申请日：2013-01-16
Applicant: INFINEON TECHNOLOGIES AG
Inventor： Ralf Otremba , Josef Hoeglauer , Juergen Schredl , Xaver Schloegel , Wolfram Hable , Manfred Mengel , Joachim Mahler , Khalil Hosseini , Franz-Peter Kalz
CPC classification number: H01L23/29 , H01L21/56 , H01L23/06 , H01L23/3107 , H01L23/36 , H01L23/49562 , H01L23/49575 , H01L24/73 , H01L2224/32245 , H01L2224/48247 , H01L2224/73265 , H01L2924/12032 , H01L2924/1301 , H01L2924/13034 , H01L2924/1305 , H01L2924/13091 , H01L2924/00012 , H01L2924/00 , H01L2924/00014
Abstract: A chip arrangement is provided, the chip arrangement, including a carrier; at least one chip electrically connected to a carrier top side; an encapsulation material at least partially surrounding the at least one chip and the carrier top side, wherein the encapsulation material is formed on one or more lateral sides of the carrier; and a ceramic material disposed on a carrier bottom side, and on at least one side of the encapsulation material.
Abstract translation: 提供了芯片布置，芯片布置包括载体; 至少一个芯片电连接到载体顶侧; 至少部分地围绕所述至少一个芯片和所述载体顶侧的封装材料，其中所述封装材料形成在所述载体的一个或多个侧面上; 以及设置在载体底侧上的至少一个侧面上的陶瓷材料。
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公开(公告)号：US08625298B2
公开(公告)日：2014-01-07
申请号：US13651709
申请日：2012-10-15
Applicant: Infineon Technologies AG
Inventor： Johannes Hankofer , Manfred Mengel , Stephan Schaecher
IPC: H05K7/00
CPC classification number: H05K9/0028 , H01L2224/16227 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/73257 , H01L2224/73265 , H01L2924/181 , H01L2924/18301 , H05K3/301 , H05K2201/09036 , H05K2201/10598 , H05K2201/10689 , H05K2203/304 , Y10T29/49155 , H01L2924/00012
Abstract: A system has a circuit board, an integrated circuit being mounted on the circuit board by external contacts, and a cover irreversibly connected to the circuit board. The cover covers the external contacts so that external access to the external contacts is prohibited by the cover.
Abstract translation: 系统具有电路板，集成电路通过外部触点安装在电路板上，以及不可逆地连接到电路板的盖。 盖子覆盖外部触点，以便盖子禁止对外部触点的外部访问。
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Patent Agency Ranking
6.发明申请公开(公告)号：US20180033665A1
公开(公告)日：2018-02-01
申请号：US15662293
申请日：2017-07-28
Applicant: Infineon Technologies AG
Inventor： Andreas Niederhofer , Manfred Mengel , Holger Tamme , Nina Wenger
IPC: H01L21/677 , H01L21/683 , H01L21/673
CPC classification number: H01L21/67769 , H01L21/67303 , H01L21/67346 , H01L21/67386 , H01L21/6773 , H01L21/67772 , H01L21/67781 , H01L21/6836
Abstract: Various embodiments provide a wafer box. The wafer box may include a housing with a receiving space for receiving at least one wafer arranged above a housing base, at least one fixing structure which is connected to the housing base and which extends from the housing base, and at least one fixing device which is fastenable to the at least one fixing structure at a variable distance from the housing base. The fixing device and the fixing structure are designed such that the at least one wafer for arrangement in the receiving space can be fixed in a position by means of the at least one fixing device fastened to the fixing structure.
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公开(公告)号：US09567211B2
公开(公告)日：2017-02-14
申请号：US14687835
申请日：2015-04-15
Applicant: Infineon Technologies AG
Inventor： Franz-Peter Kalz , Horst Theuss , Bernhard Winkler , Khalil Hosseini , Joachim Mahler , Manfred Mengel
CPC classification number: B81B7/02 , B81B3/0021 , B81B3/0072 , B81B2201/0235 , B81B2201/0264 , B81C2203/0154 , G01L1/18 , G01L9/0072 , G01L19/0092 , G01L19/02
Abstract: Micromechanical semiconductor sensing device comprises a micromechanical sensing structure being configured to yield an electrical sensing signal, and a piezoresistive sensing device provided in the micromechanical sensing structure, said piezoresistive sensing device being arranged to sense a mechanical stress disturbing the electrical sensing signal and being configured to yield an electrical disturbance signal based on the sensed mechanical stress disturbing the electrical sensing signal.
Abstract translation: 微机械半导体感测装置包括被配置为产生电感测信号的微机械感测结构和设置在微机械感测结构中的压阻感测装置，所述压阻感测装置被布置成感测扰动电感测信号的机械应力，并被配置为 基于感测到的电感测信号的机械应力产生电干扰信号。
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公开(公告)号：US20170004979A1
公开(公告)日：2017-01-05
申请号：US15268674
申请日：2016-09-19
Applicant: Infineon Technologies AG
Inventor： Manfred Mengel , Joachim Mahler , Khalil Hosseini , Franz-Peter Kalz
CPC classification number: H01L21/4807 , H01L21/4825 , H01L21/56 , H01L21/77 , H01L23/3731 , H01L23/3735 , H01L23/49562 , H01L23/49575 , H01L23/49586 , H01L24/27 , H01L24/743 , H01L25/50 , H01L2224/32225 , H01L2224/32245 , H01L2224/48091 , H01L2224/48137 , H01L2224/48145 , H01L2224/48247 , H01L2224/48465 , H01L2224/48472 , H01L2224/49111 , H01L2224/73265 , H01L2224/83192 , H01L2224/92247 , H01L2924/07802 , H01L2924/12032 , H01L2924/1301 , H01L2924/13034 , H01L2924/1305 , H01L2924/1306 , H01L2924/13091 , H01L2924/181 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
Abstract: A chip arrangement is provided, the chip arrangement, including a carrier; a first chip electrically connected to the carrier; a ceramic layer disposed over the carrier; and a second chip disposed over the ceramic layer; wherein the ceramic layer has a porosity in the range from about 3% to about 70%.
Abstract translation: 提供了芯片布置，芯片布置包括载体; 电连接到所述载体的第一芯片; 布置在所述载体上的陶瓷层; 以及设置在所述陶瓷层上的第二芯片; 其中所述陶瓷层的孔隙率在约3％至约70％的范围内。
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公开(公告)号：US20170003180A1
公开(公告)日：2017-01-05
申请号：US15268244
申请日：2016-09-16
Applicant: Infineon Technologies AG
Inventor： Franz-Peter Kalz , Horst Theuss , Bernhard Winkler , Khalil Hosseini , Joachim Mahler , Manfred Mengel
CPC classification number: B81B7/02 , B81B3/0021 , B81B3/0072 , B81B2201/0235 , B81B2201/0264 , B81C2203/0154 , G01L1/18 , G01L9/0072 , G01L19/0092 , G01L19/02
Abstract: A micromechanical semiconductor sensing device is disclosed. In an embodiment the sensing device includes a micromechanical sensing structure being configured to yield an electrical sensing signal, and a piezoresistive sensing device provided in the micromechanical sensing structure, the piezoresistive sensing device being arranged to sense a mechanical stress disturbing the electrical sensing signal and being configured to yield an electrical disturbance signal based on the sensed mechanical stress disturbing the electrical sensing signal.
Abstract translation: 公开了一种微机械半导体感测装置。 在一个实施例中，感测装置包括微机械感测结构，其被配置为产生电感测信号，以及设置在微机械感测结构中的压阻感测装置，所述压阻感测装置布置成感测扰动电感测信号的机械应力， 被配置为基于感测到的电感测信号的机械应力产生电干扰信号。
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公开(公告)号：US20150217994A1
公开(公告)日：2015-08-06
申请号：US14687835
申请日：2015-04-15
Applicant: Infineon Technologies AG
Inventor： Franz-Peter Kalz , Horst Theuss , Bernhard Winkler , Khalil Hosseini , Joachim Mahler , Manfred Mengel
CPC classification number: B81B7/02 , B81B3/0021 , B81B3/0072 , B81B2201/0235 , B81B2201/0264 , B81C2203/0154 , G01L1/18 , G01L9/0072 , G01L19/0092 , G01L19/02
Abstract: Micromechanical semiconductor sensing device comprises a micromechanical sensing structure being configured to yield an electrical sensing signal, and a piezoresistive sensing device provided in the micromechanical sensing structure, said piezoresistive sensing device being arranged to sense a mechanical stress disturbing the electrical sensing signal and being configured to yield an electrical disturbance signal based on the sensed mechanical stress disturbing the electrical sensing signal.
Abstract translation: 微机械半导体感测装置包括被配置为产生电感测信号的微机械感测结构和设置在微机械感测结构中的压阻感测装置，所述压阻感测装置被布置成感测扰动电感测信号的机械应力，并被配置为 基于感测到的电感测信号的机械应力产生电干扰信号。
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