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    Flux Residue Cleaning System and Method
    5.
    发明申请
    Flux Residue Cleaning System and Method 有权
    助焊剂残渣清洗系统及方法

    公开(公告)号：US20130199577A1

    公开(公告)日：2013-08-08

    申请号：US13369138

    申请日：2012-02-08

    申请人： I-Ting Chen ,  Ying-Ching Shih ,  Szu Wei Lu ,  Jing-Cheng Lin

    发明人： I-Ting Chen ,  Ying-Ching Shih ,  Szu Wei Lu ,  Jing-Cheng Lin

    IPC分类号： B08B7/04 ,  B08B5/00 ,  B08B3/08 ,  B08B3/02 ,  B08B3/12

    CPC分类号： H01L21/02041 ,  H01L21/4864 ,  H01L21/67028 ,  H01L24/81 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/81815 ,  H01L2224/81911 ,  H01L2924/00014 ,  H01L2924/07802 ,  H01L2924/00 ,  H01L2224/0401

    摘要： A flux residue cleaning system includes first and second immersion chambers, first and second spray chambers, and a drying chamber. The first immersion chamber softens an outer region of a flux residue formed around microbumps interposed between a wafer and a die when the wafer is immersed in a first chemical. The first spray chamber removes the outer region of the flux residue when the wafer is impinged upon by a first chemical spray in order to expose an inner region of the flux residue. The second immersion chamber softens the inner region of the flux residue when the wafer is immersed in a second chemical. The second spray chamber removes the inner region of the flux residue when the wafer is impinged upon by a second chemical spray in order to clean the wafer to a predetermined standard. The drying chamber dries the wafer.

    摘要翻译： 助焊剂残渣清洁系统包括第一和第二浸没室，第一和第二喷雾室以及干燥室。 当晶片浸入第一化学品中时，第一浸入室软化在介于晶片和管芯之间的微胶片周围形成的焊剂残余物的外部区域。 当晶片通过第一化学喷雾冲击以便暴露焊剂残余物的内部区域时，第一喷雾室除去焊剂残余物的外部区域。 当晶片浸入第二种化学品中时，第二浸入室软化助焊剂残余物的内部区域。 当晶片被第二化学喷雾冲击时，第二喷雾室去除焊剂残余物的内部区域，以便将晶​​片清洁至预定的标准。 干燥室干燥晶片。

    Molding Wafer Chamber
    8.
    发明申请
    Molding Wafer Chamber 有权
    成型晶圆室

    公开(公告)号：US20130037990A1

    公开(公告)日：2013-02-14

    申请号：US13208197

    申请日：2011-08-11

    申请人： Jing-Cheng Lin ,  Chin-Chuan Chang ,  Jui-Pin Hung ,  Szu Wei Lu ,  Shin-Puu Jeng ,  Chen-Hua Yu

    发明人： Jing-Cheng Lin ,  Chin-Chuan Chang ,  Jui-Pin Hung ,  Szu Wei Lu ,  Shin-Puu Jeng ,  Chen-Hua Yu

    IPC分类号： H01L21/56

    CPC分类号： H01L21/561 ,  B29C33/123 ,  H01L21/566 ,  H01L23/3121 ,  H01L24/96 ,  H01L2924/181 ,  H01L2924/3511 ,  H01L2924/00

    摘要： A bottom chase and a top chase of a molding system form a cavity to house a molding carrier and one or more devices. The molding carrier is placed in a desired location defined by a guiding component. The guiding component may be entirely within the cavity, or extend above a surface of the bottom chase and extend over a contacting edge of the top chase and the bottom chase, so that there is a gap between the edge of the top chase and the edge of the molding carrier which are filled by molding materials to cover the edge of the molding carrier. Releasing components may be associated with the top chase and/or the bottom chase, which may be a plurality of tape roller with a releasing film, or a plurality of vacuum holes within the bottom chase, or a plurality of bottom pins with the bottom chase.

    摘要翻译： 模制系统的底部追逐和顶部追逐形成容纳模制载体和一个或多个装置的空腔。 模制载体被放置在由引导部件限定的期望位置。 引导部件可以完全在腔内，或者延伸到底部追逐的表面之上，并延伸到顶部追逐和底部追逐的接触边缘上，使得在顶部追逐的边缘和边缘之间存在间隙 由模制材料填充以覆盖模制载体的边缘的模制载体。 释放部件可以与顶部追逐和/或底部追逐相关联，其可以是具有释放膜的多个带辊或底部追逐内的多个真空孔，或者具有底部追逐的多个底部销 。