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公开(公告)号：US06495917B1
公开(公告)日：2002-12-17
申请号：US09527276
申请日：2000-03-17
申请人： John J. Ellis-Monaghan , Paul M. Feeney , Robert M. Geffken , Howard S. Landis , Rosemary A. Previti-Kelly , Bette L. Bergman Reuter , Matthew J. Rutten , Anthony K. Stamper , Sally J. Yankee
发明人： John J. Ellis-Monaghan , Paul M. Feeney , Robert M. Geffken , Howard S. Landis , Rosemary A. Previti-Kelly , Bette L. Bergman Reuter , Matthew J. Rutten , Anthony K. Stamper , Sally J. Yankee
IPC分类号： H01L2358
CPC分类号： H01L24/12 , H01L21/76801 , H01L21/76835 , H01L23/3171 , H01L23/5329 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/45 , H01L2224/0401 , H01L2224/04042 , H01L2224/05006 , H01L2224/05567 , H01L2224/05624 , H01L2224/13022 , H01L2224/13099 , H01L2224/45124 , H01L2224/45144 , H01L2224/48624 , H01L2224/48724 , H01L2924/00014 , H01L2924/0002 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01019 , H01L2924/01022 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01039 , H01L2924/0105 , H01L2924/01073 , H01L2924/01074 , H01L2924/01079 , H01L2924/01082 , H01L2924/01327 , H01L2924/014 , H01L2924/04953 , H01L2924/05042 , H01L2924/14 , H01L2924/00 , H01L2224/05552 , H01L2224/05556
摘要： A method and structure for a semiconductor chip includes a plurality of layers of interconnect metallurgy, at least one layer of deformable dielectric material over the interconnect metallurgy, at least one input/output bonding pad, and a support structure that includes a substantially rigid dielectric in a supporting relationship to the pad that avoids crushing the deformable dielectric material.
摘要翻译： 半导体芯片的方法和结构包括多层互连冶金，互连冶金上的至少一层可变形介电材料，至少一个输入/输出接合焊盘和支撑结构，其包括基本上刚性的电介质 与垫的支撑关系，避免破坏可变形电介质材料。
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公开(公告)号：US5126006A
公开(公告)日：1992-06-30
申请号：US708608
申请日：1991-05-31
申请人： John E. Cronin , Paul A. Farrar, Sr. , Robert M. Geffken , William H. Guthrie , Carter W. Kaanta , Rosemary A. Previti-Kelly , James G. Ryan , Ronald R. Uttecht , Andrew J. Watts
发明人： John E. Cronin , Paul A. Farrar, Sr. , Robert M. Geffken , William H. Guthrie , Carter W. Kaanta , Rosemary A. Previti-Kelly , James G. Ryan , Ronald R. Uttecht , Andrew J. Watts
CPC分类号： G03F7/0035 , G03F1/50
摘要： A sequence of masking steps reduces the amount of transference of a workpiece among work stations and reduces certain tolerances required for mask alignment in the construction of integrated circuits, and a gray level mask suitable for photolithography. In the integrated circuit, masking layers are developed directly in a wafer for delineating vertical and horizontal portions of an electrically conductive path. The mask is constructed of a transparent glass substrate which supports plural levels of materials having different optical transmissivities. In the case of a mask employing only two of these levels, one level may be constructed of a glass made partially transmissive by substitution of silver ions in place of metal ions of alkali metal silicates employed in the construction of the glass. The second layer may be made opaque by construction of the layer of a metal such as chromium. Both the wafer and the mask are fabricated by a photoresist structure which is etched in specific regions by photolithographic masking to enable selective etching of exposed regions of the level of materials of differing optical transmissivities. Various etches are employed for selective etching of the photoresist and other ones of the layers. The etches include plasma etch with chloride ions to attack the chromium of the opaque layer, compounds of fluorine to attack the glass layer, and reactive ion etching with oxygen to attack the photoresist structure.
摘要翻译： 一系列掩蔽步骤减少了工件之间工件的移动量，并降低了集成电路结构中掩模对准所需的某些公差以及适用于光刻的灰度级掩模。 在集成电路中，掩模层直接在晶片中显影，用于描绘导电路径的垂直和水平部分。 掩模由透明玻璃基板构成，其支撑具有不同透光率的多层材料。 在仅使用这些水平中的两个的掩模的情况下，一个层可以由通过取代银离子代替在玻璃的结构中使用的碱金属硅酸盐的金属离子而部分透射的玻璃构成。 第二层可以通过金属如铬的构造而变得不透明。 晶片和掩模都通过光致抗蚀剂结构制造，该光致抗蚀剂结构通过光刻掩模在特定区域中被蚀刻，以使得能够选择性地蚀刻具有不同光学透射率的材料层的暴露区域。 各种蚀刻用于选择性蚀刻光致抗蚀剂和其它层。 蚀刻包括用氯离子等离子体蚀刻以侵蚀不透明层的铬，氟的化合物侵蚀玻璃层，以及用氧反应离子蚀刻以侵蚀光致抗蚀剂结构。
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公开(公告)号：US5466636A
公开(公告)日：1995-11-14
申请号：US946993
申请日：1992-09-17
申请人： John E. Cronin , Carter W. Kaanta , Donald M. Kenney , Michael L. Kerbaugh , Howard S. Landis , Brian J. Machesney , Paul Parries , Rosemary A. Previti-Kelly , John F. Rembetski
发明人： John E. Cronin , Carter W. Kaanta , Donald M. Kenney , Michael L. Kerbaugh , Howard S. Landis , Brian J. Machesney , Paul Parries , Rosemary A. Previti-Kelly , John F. Rembetski
IPC分类号： H01L21/28 , H01L21/60 , H01L21/768 , H01L21/8242 , H01L29/417 , H01L21/44
CPC分类号： H01L27/10861 , H01L21/76838 , H01L21/76897 , H01L29/41766 , Y10S438/943
摘要： A semiconductor fabrication process for forming borderless contacts (130, 170, 172) using a removable mandrel (110). The process involves depositing a mandrel on an underlying barrier layer (100) designed to protect underlying structures (40) formed on a substrate (24). The mandrel is made from a material that will etch at a faster rate than the barrier layer so as to permit the formation of openings in the mandrel to be stopped on the barrier layer without penetrating such layer. After depositing a contact (130) in a first opening (120) formed in the mandrel, a second opening (140) is formed and a second contact (170) is deposited therein. Thereafter, the mandrel is removed and replaced with a layer of solid dielectric material (180).
摘要翻译： 一种用于使用可移除心轴（110）形成无边界触点（130,170,172）的半导体制造工艺。 该方法包括将心轴沉积在设计成保护形成在基底（24）上的下面的结构（40）的下面的阻挡层（100）上。 心轴由将以比阻挡层更快的速度蚀刻的材料制成，以允许心轴中的开口形成停止在阻挡层上而不穿透该层。 在将形成在心轴中的第一开口（120）中的接触（130）沉积之后，形成第二开口（140），并且在其中沉积第二接触（170）。 此后，移去心轴并用一层固体电介质材料（180）代替。
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公开(公告)号：US06713838B2
公开(公告)日：2004-03-30
申请号：US10003587
申请日：2001-10-29
IPC分类号： H01L2900
CPC分类号： H01L23/5256 , H01L23/5227 , H01L2924/0002 , H01L2924/00
摘要： A method and structure for blowing a fuse including removing an insulator above a fuse link and etching the fuse link.
摘要翻译： 一种用于熔断保险丝的方法和结构，包括去除熔丝链上方的绝缘体并蚀刻熔丝。
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公开(公告)号：US5326430A
公开(公告)日：1994-07-05
申请号：US164494
申请日：1993-12-07
摘要： A micro electrostatic cooling fan arrangement is provided which includes a heat source having a planar surface, a stator attached to the heat source, an axle attached to the heat source and spaced from the stator, a rotary element including a hub having an aperture therein and a fan blade, the axle passing through the aperture of the hub and the fan blade having a major surface thereof disposed at an angle with respect to the surface of the heat source and attached to the hub at one end, with the other end of the fan blade being adjacent to but spaced from the stator and a voltage source applied to the stator having sufficient voltage to charge the fan blade. Also, a process is provided for making a microfan which includes forming a strip of sacrificial material on a planar surface of a heat source, applying a spin on insulating layer over the heat source and the strip for producing a sloping surface extending from about the top of the strip toward the planar surface of the heat source, applying a layer of conductive material on the sloping surface and strip and defining from the layer of conductive material a fan blade on the sloping surface of the spin on insulating layer and a stator at one end of the fan blade.
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公开(公告)号：US5043789A
公开(公告)日：1991-08-27
申请号：US494006
申请日：1990-03-15
IPC分类号： C09D183/08 , C09D183/00 , H01L21/312
CPC分类号： H01L21/02126 , H01L21/02216 , H01L21/02282 , H01L21/3121 , H01L21/3122
摘要： An improved insulating layer is formed by applying to a suitable substrate an organic solution, prepared by reacting an aminoalkoxysilane monomer, an arylalkoxysilane or arylsilazane monomer and water in a solvent, and then heating the coated substrate under conditions so as to evaporate the solvent and form a layer of cured ladder-type silsesquioxane copolymer. The insulating layer, which demonstrates excellent planarizing and thermal stability characteristics, is particularly useful in semiconductor device applications.
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公开(公告)号：US5006488A
公开(公告)日：1991-04-09
申请号：US417935
申请日：1989-10-06
IPC分类号： H01L21/302 , H01L21/027 , H01L21/28 , H01L21/3065 , H01L21/3205
CPC分类号： H01L21/28 , H01L21/0272 , Y10S148/075 , Y10S148/10 , Y10S438/951
摘要： Disclosed is a process for forming a pattern of metallization on a processed semiconductor substrate, under high temperature conditions, employing a polyimide precursor material as a lift-off layer. Advantageously, the material is photosensitive, and, after exposure and development, the portions of the layer remaining on the substrate can be completely and readily removed with conventional solvents.
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8.发明授权Method for selective electroplating of semiconductor device I/O pads using a titanium-tungsten seed layer 有权使用钛 - 钨种子层选择性地电镀半导体器件I / O焊盘的方法公开(公告)号：US07144490B2
公开(公告)日：2006-12-05
申请号：US10707047
申请日：2003-11-18
申请人： Tien-Jen Cheng , David E. Eichstadt , Jonathan H. Griffith , Sarah H. Knickerbocker , Rosemary A. Previti-Kelly , Roger A. Quon , Kamalesh K. Srivastava , Keith Kwong-Hon Wong
发明人： Tien-Jen Cheng , David E. Eichstadt , Jonathan H. Griffith , Sarah H. Knickerbocker , Rosemary A. Previti-Kelly , Roger A. Quon , Kamalesh K. Srivastava , Keith Kwong-Hon Wong
CPC分类号： H01L24/13 , C25D5/022 , C25D5/12 , C25D7/123 , H01L24/11 , H01L2224/03912 , H01L2224/0401 , H01L2224/05018 , H01L2224/05124 , H01L2224/05147 , H01L2224/05155 , H01L2224/05166 , H01L2224/05171 , H01L2224/05558 , H01L2224/05562 , H01L2224/05644 , H01L2224/1147 , H01L2224/1148 , H01L2224/13022 , H01L2224/13099 , H01L2224/131 , H01L2924/0001 , H01L2924/00013 , H01L2924/0002 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01022 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/04953 , H01L2224/29099 , H01L2224/05552 , H01L2924/00014 , H01L2924/013
摘要： A method for selective electroplating of a semiconductor input/output (I/O) pad includes forming a titanium-tungsten (TiW) layer over a passivation layer on a semiconductor substrate, the TiW layer further extending into an opening formed in the passivation layer for exposing the I/O pad, such that the TiW layer covers sidewalls of the opening and a top surface of the I/O pad. A seed layer is formed over the TiW layer, and portions of the seed layer are selectively removed such that remaining seed layer material corresponds to a desired location of interconnect metallurgy for the I/O pad. At least one metal layer is electroplated over the remaining seed layer material, using the TiW layer as a conductive electroplating medium.
摘要翻译： 一种用于半导体输入/输出（I / O）焊盘的选择性电镀的方法包括在半导体衬底上的钝化层上形成钛 - 钨（TiW）层，所述TiW层进一步延伸到形成在钝化层中的开口中 暴露I / O焊盘，使得TiW层覆盖开口的侧壁和I / O焊盘的顶表面。 在TiW层上形成种子层，并且选择性地去除种子层的部分，使得剩余的种子层材料对应于用于I / O焊盘的互连冶金的期望位置。 使用TiW层作为导电电镀介质，在剩余的种子层材料上电镀至少一层金属层。
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公开(公告)号：US06335229B1
公开(公告)日：2002-01-01
申请号：US09417289
申请日：1999-10-13
IPC分类号： H01L2182
CPC分类号： H01L23/5256 , H01L23/5227 , H01L2924/0002 , H01L2924/00
摘要： A method and structure for blowing a fuse including removing an insulator above a fuse link and etching the fuse link.
摘要翻译： 一种用于熔断保险丝的方法和结构，包括去除熔丝链上方的绝缘体并蚀刻熔丝。
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公开(公告)号：US5296775A
公开(公告)日：1994-03-22
申请号：US950621
申请日：1992-09-24
摘要： A micro electrostatic cooling fan arrangement is provided which includes a heat source having a planar surface, a stator attached to the heat source, an axle attached to the heat source and spaced from the stator, a rotary element including a hub having an aperture therein and a fan blade, the axle passing through the aperture of the hub and the fan blade having a major surface thereof disposed at an angle with respect to the surface of the heat source and attached to the hub at one end, with the other end of the fan blade being adjacent to but spaced from the stator and a voltage source applied to the stator having sufficient voltage to charge the fan blade.Also, a process is provided for making a microfan which includes forming a strip of sacrificial material on a planar surface of a heat source, applying a spin on insulating layer over the heat source and the strip for producing a sloping surface extending from about the top of the strip toward the planar surface of the heat source, applying a layer of conductive material on the sloping surface and strip and defining from the layer of conductive material a fan blade on the sloping surface of the spin on insulating layer and a stator at one end of the fan blade.
摘要翻译： 提供一种微静电冷却风扇装置，其包括具有平坦表面的热源，附接到热源的定子，附接到热源并与定子间隔开的轴;旋转元件，包括其中具有孔的旋转元件， 风扇叶片，通过轮毂的孔的轴和风扇叶片的主表面相对于热源的表面设置成一定角度并且在一端附接到轮毂，而另一端 风扇叶片与定子相邻但间隔开，并且施加到定子的电压源具有足够的电压以对风扇叶片充电。 此外，提供了一种制造微纤维的方法，其包括在热源的平坦表面上形成牺牲材料条，在绝热层上施加旋涂在热源和带上，用于产生从顶部延伸的倾斜表面 的条带朝向热源的平面表面，在倾斜表面上施加一层导电材料，并且从导电材料层划分并限定绝缘层上的自旋的倾斜表面上的风扇叶片和一个定子上的风扇叶片 风扇叶片的末端。
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