摘要:
Embodiments of the present invention may be utilized to improve electron beam deflection. One embodiment provides an electrostatic deflection system with electrodes that minimize aberrations and to achieve vertical incidence simultaneously. By using at least two stages of deflection for a deflection direction, the present invention allows the deflected electron beam to pass a back focal plane of an objective lens while deflection capacitors are not disposed across the back focal plane. As a result, deflection electrodes can have an angle of 120° to minimize aberrations and simultaneously achieve vertical incidence of the electron beam on a target to avoid distortions or changes in magnification with height variations of the target or focus variations.
摘要:
An apparatus and method for deflecting electron beams with high precision and high throughput. At least one electrode of a deflecting capacitor is connected to a signal source via a coaxial cable. A termination resistor is further connected to the coaxial cable and the electrode at the joint of the coaxial cable and the electrode. The termination resistor has a resistance matched to the impedance of the coaxial cable and the electrode has an impedance matched to half of the impedance of the coaxial. The deflecting capacitors of the present invention have a minimized loss of precision due to eddy current. The spacing of electrodes in the deflecting capacitors is reduced by a factor of approximately two compared to the state-the-art system.
摘要:
A method of operating a focused ion beam device having a gas field ion source is described. According to some embodiments, the method includes emitting an ion beam from a gas field ion source, providing an ion beam column ion beam energy in the ion beam column which is higher than the final beam energy, decelerating the ion beam for providing a final beam energy on impingement of the ion beam on the specimen of 1 keV to 4 keV, and imaging the specimen.
摘要:
Methods and apparatus to facilitate the measurement of the amount of scattered electrons collected by an anti-fogging baffle arrangement are provided. For some embodiments, by affixing a lead to an electrically isolated (floating) portion of the baffle arrangement, the amount of scattered electrons collected thereby may be read out, for example, as a current signal. Thus, for such embodiments, the baffle arrangement may double as a detector, allowing an image of surface (e.g., a mask or substrate surface) to be generated.
摘要:
The present invention provides a charged particle emission component (100) for providing a charged particle beam (17) to a chamber of a charged particle beam column. The device comprises a gun chamber for housing the charged particle emission component; an emitter (16) for emitting a beam of charged particles; at least one beam shaping element (109; 18; 108; 402); and a residual gas diffusion barrier (106; 206) directly subsequent the emitter.
摘要:
An ion beam apparatus and a method for providing an energy-filtered primary ion beam are described. Therein, a primary ion beam having an asymmetric first energy distribution is generated by means of an ion source. The primary ion beam is energy filtered using, for example, a retarding lens.
摘要:
Methods and apparatus to facilitate the measurement of the amount of scattered electrons collected by an anti-fogging baffle arrangement are provided. For some embodiments, by affixing a lead to an electrically isolated (floating) portion of the baffle arrangement, the amount of scattered electrons collected thereby may be read out, for example, as a current signal. Thus, for such embodiments, the baffle arrangement may double as a detector, allowing an image of surface (e.g., a mask or substrate surface) to be generated.
摘要:
Embodiments of the present invention may be utilized to improve electron beam deflection. One embodiment provides an electrostatic deflection system with electrodes that minimize aberrations and to achieve vertical incidence simultaneously. By using at least two stages of deflection for a deflection direction, the present invention allows the deflected electron beam to pass a back focal plane of an objective lens while deflection capacitors are not disposed across the back focal plane. As a result, deflection electrodes can have an angle of 120° to minimize aberrations and simultaneously achieve vertical incidence of the electron beam on a target to avoid distortions or changes in magnification with height variations of the target or focus variations.
摘要:
A focused ion beam device is described comprising a gas field ion source with an analyzer for analyzing and classifying the structure of a specimen, a controller for controlling and/or modifying the structure of the specimen according to the analysis of the analyzer, an emitter tip, the emitter tip has a base tip comprising a first material and a supertip comprising a material different from the first material, wherein the supertip is a single atom tip and the base tip is a single crystal base tip. Furthermore, the focused ion beam device has a probe current control and a sample charge control. A method of operating a focused ion beam device is provided comprising applying a voltage between a single emission center of the supertip and an electrode, supplying gas to the emitter tip, analyzing and classifying the structure of a specimen, and controlling the structure of the specimen.
摘要:
A focused ion beam device is provided, including: an ion beam column adapted to house a gas field ion source emitter with an emitter tip and an emitter area for generating ions, a heating means adapted to heat the emitter tip, one or more gas inlets adapted to introduce a first gas and at least one second gas to the emitter area, an objective lens adapted to focus the ion beam generated from the first gas or the second gas, and a controller adapted to switch between a first emitter tip temperature and a second emitter tip temperature for generating an ion beam of ions of the first gas or an ion beam of ions of the at least one second gas.