公开(公告)号：US5116899A

公开(公告)日：1992-05-26

申请号：US742281

申请日：1991-08-08

申请人： Kazuhiko Aratake ,  Masayoshi Horikoshi ,  Fumio Kato ,  Yasuhiko Suzuki ,  Yuki Morimoto

发明人： Kazuhiko Aratake ,  Masayoshi Horikoshi ,  Fumio Kato ,  Yasuhiko Suzuki ,  Yuki Morimoto

IPC分类号： C08K3/34 ,  C08K5/02 ,  C08K7/00 ,  C08K13/04 ,  C08L23/16 ,  F02B77/00 ,  H01B3/44

CPC分类号： H01B3/441 ,  C08K13/04

摘要： The present invention is directed to a resin composition for electric insulation materials for vehicles such as distributor caps which is prepared by blending a crystalline propylene-ethylene copolymer resin with 3 to 10 wt. % of a glass fiber, 10 to 20 wt. % of talc or mica, 5 to 20 wt. % of silica, 4 to 20 wt. % of modified polyolefin resins, 10 to 30 wt. % of halogen-containing flame retardants and 3 to 15 wt. % of flame retardant auxiliaries. In the resin composition of the present invention, balance is kept in all points of mechanical characteristics, mechanical characteristics at high temperature, electrical characteristics, nitric acid resistance, weld characteristics, blooming resistance, corona resistance and flame retardance.

公开(公告)号：US08470555B2

公开(公告)日：2013-06-25

申请号：US13141138

申请日：2009-12-22

申请人： Yusuke Suzuki ,  Hiroshi Tahara ,  Keiichi Yamamoto ,  Yuzuru Kitahara ,  Yasuhiko Suzuki

发明人： Yusuke Suzuki ,  Hiroshi Tahara ,  Keiichi Yamamoto ,  Yuzuru Kitahara ,  Yasuhiko Suzuki

IPC分类号： C12P21/06 ,  C12N15/00 ,  C07H21/02 ,  C07K14/00

CPC分类号： C07K14/78 ,  C07K14/4726 ,  C07K2319/00 ,  C07K2319/02

摘要： As a result of dedicated research, the present inventors have successfully invented a collagen gene construct which can be easily purified and maintains a triple helix structure equivalent to that of naturally-occurring collagen while having a low molecular weight. Specifically, one-step purification by affinity purification is enabled because CR-D (a signal peptide) has a carbohydrate recognition domain. By substituting a portion of a human collagen structural gene of the present invention with the collagen-like structural gene portion of MBL, a low-molecular-weight collagen which maintains a triple helix structure and is thermally stable can be obtained with high purity and in large quantities.

摘要翻译： 作为专门研究的结果，本发明人已经成功地发明了一种胶原基因构建体，其可以容易地纯化并保持与天然存在的胶原蛋白相当的三重螺旋结构，同时具有低分子量。 具体地，通过亲和纯化进行一步纯化，因为CR-D（信号肽）具有碳水化合物识别结构域。 通过将本发明的人胶原结构基因的一部分用MBL的胶原样结构基因部分代替，可以以高纯度获得维持三螺旋结构并且是热稳定的低分子量胶原， 大批量。

公开(公告)号：US08258361B2

公开(公告)日：2012-09-04

申请号：US12452438

申请日：2008-06-27

申请人： Yasuhiko Suzuki ,  Shinsuke Kinoshita ,  Atsushi Shibahara ,  Naritoshi Yoshimura ,  Isao Hara ,  Tetsuya Hamada ,  Kazumori Kawamura ,  Kou Tsurugi ,  Yasunori Saito ,  Seiichi Ishii ,  Yasushi Nakayama ,  Naoto Matsukawa ,  Susumu Murata

发明人： Yasuhiko Suzuki ,  Shinsuke Kinoshita ,  Atsushi Shibahara ,  Naritoshi Yoshimura ,  Isao Hara ,  Tetsuya Hamada ,  Kazumori Kawamura ,  Kou Tsurugi ,  Yasunori Saito ,  Seiichi Ishii ,  Yasushi Nakayama ,  Naoto Matsukawa ,  Susumu Murata

IPC分类号： C07C2/22 ,  C07F7/28 ,  B01J31/18

CPC分类号： C08F10/00 ,  B01J31/143 ,  B01J31/1616 ,  B01J31/2243 ,  B01J2231/122 ,  B01J2231/20 ,  B01J2531/46 ,  B01J2531/62 ,  C07C2/32 ,  C07C251/24 ,  C07C2521/08 ,  C07C2521/16 ,  C07C2531/14 ,  C07C2531/22 ,  C07F7/003 ,  C08F110/02 ,  C07C11/107 ,  C08F4/64048 ,  C08F2500/02 ,  C08F4/64124 ,  C08F4/6931 ,  C08F4/64117 ,  C08F4/02

摘要： The invention provides transition metal complex compounds, high-activity olefin oligomerization catalysts containing the compounds, and olefin oligomerization processes using the catalysts.A transition metal complex compound [A] according to the invention is represented by Formula (I) or Formula (I′) below. An olefin oligomerization catalyst includes the transition metal complex compound [A]. In an olefin oligomerization process of the invention, an olefin is oligomerized in the presence of the catalyst.

摘要翻译： 本发明提供了过渡金属络合物，含有这些化合物的高活性烯烃低聚催化剂和使用该催化剂的烯烃低聚方法。 根据本发明的过渡金属络合物[A]由下式（I）或式（I'）表示。 烯烃低聚催化剂包括过渡金属络合物[A]。 在本发明的烯烃低聚方法中，烯烃在催化剂存在下被低聚。

公开(公告)号：US07972582B2

公开(公告)日：2011-07-05

申请号：US10482683

申请日：2002-11-29

申请人： Toyoji Shinohara ,  Yoichi Mori ,  Yasuhiko Suzuki ,  Hiroshi Aono ,  Yuji Shirao

发明人： Toyoji Shinohara ,  Yoichi Mori ,  Yasuhiko Suzuki ,  Hiroshi Aono ,  Yuji Shirao

IPC分类号： B01D53/00 ,  B01D53/34 ,  B01D53/68 ,  B01D53/92 ,  B01D53/94

CPC分类号： F23J15/08 ,  B01D53/1456 ,  B01D53/62 ,  B01D53/68 ,  B01D53/70 ,  B01D53/864 ,  B01D53/8659 ,  F23G7/063 ,  F23J15/006 ,  F23J2215/301 ,  F23J2215/40 ,  F23J2219/10 ,  F23J2219/30 ,  F23J2219/40 ,  F23J2219/60 ,  Y02A50/2341

摘要： An apparatus for treating an exhaust gas that includes a pre-treatment section that removes a powdery component, a water-soluble component or a hydrolytic component from the exhaust gas. The exhaust gas contains a fluorine compound and CO. A heating oxidative decomposing section performs heating oxidative decomposition of at least one of the fluorine compound and CO to detoxify the exhaust gas. The apparatus also has a post-treatment section for post-treating an acid gas such as HF which has been produced by the heating oxidative decomposition.

摘要翻译： 一种废气处理装置，其特征在于，包括从废气中除去粉状成分，水溶性成分或水解成分的预处理部。 排气中含有氟化合物和CO，加热氧化分解部进行至少一种氟化合物和CO的加热氧化分解，对废气进行解毒。 该设备还具有用于后处理由加热氧化分解产生的诸如HF的酸性气体的后处理部分。

公开(公告)号：US20080108160A1

公开(公告)日：2008-05-08

申请号：US11969088

申请日：2008-01-03

申请人： Osamu Goto ,  Takeharu Asano ,  Yasuhiko Suzuki ,  Motonobu Takeya ,  Katsuyoshi Shibuya ,  Takashi Mizuno ,  Tsuyoshi Tojo ,  Shiro Uchida ,  Masao Ikeda

发明人： Osamu Goto ,  Takeharu Asano ,  Yasuhiko Suzuki ,  Motonobu Takeya ,  Katsuyoshi Shibuya ,  Takashi Mizuno ,  Tsuyoshi Tojo ,  Shiro Uchida ,  Masao Ikeda

IPC分类号： H01L33/00

CPC分类号： H01L33/0075 ,  B82Y20/00 ,  H01L33/04 ,  H01L33/06 ,  H01L33/32 ,  H01S5/0425 ,  H01S5/2004 ,  H01S5/2013 ,  H01S5/3201 ,  H01S5/34333 ,  H01S2301/173 ,  H01S2304/12

摘要： A semiconductor light emitting device made of nitride III-V compound semiconductors is includes an active layer made of a first nitride III-V compound semiconductor containing In and Ga, such as InGaN; an intermediate layer made of a second nitride III-V compound semiconductor containing In and Ga and different from the first nitride III-V compound semiconductor, such as InGaN; and a cap layer made of a third nitride III-V compound semiconductor containing Al and Ga, such as p-type AlGaN, which are deposited in sequential contact.

摘要翻译： 由氮化物III-V化合物半导体制成的半导体发光器件包括由In和Ga等InGaN的第一氮化物III-V化合物半导体构成的有源层; 由包含In和Ga的不同于第一氮化物III-V化合物半导体的第二氮化物III-V化合物半导体制成的中间层，例如InGaN; 以及由含有Al和Ga的第三氮化物III-V化合物半导体（例如p型AlGaN）制成的覆盖层，其以顺序接触沉积。

公开(公告)号：US20060239854A1

公开(公告)日：2006-10-26

申请号：US10564951

申请日：2004-07-16

申请人： Noboru Uenishi ,  Norihito Goma ,  Yasuhiko Suzuki

发明人： Noboru Uenishi ,  Norihito Goma ,  Yasuhiko Suzuki

IPC分类号： C22C5/06

CPC分类号： C22C5/06 ,  B32B15/018 ,  H01H1/0231 ,  H01H1/02376

摘要： An electric contact of high performance that is constituted of a Cd-free Ag alloy posing no toxic problem, excels in insulating capability and can ensure stability of brazing and consumption characteristics and that can be used in a breaker or high-load electromagnetic switch; and electrical equipment including the electric contact. In particular, an electric contact comprised of an Ag alloy containing 1 to 9 mass % of Sn in which the amount of Cd as impurity is 0 or less than 0.01 mass %, the electric contact having a double layer structure composed of a surface-side first layer and an interior second layer wherein the first layer has a thickness of 10 μm or greater and has an average hardness of 150 or higher on the microvickers scale stipulated in JIS while the second layer has an average hardness of higher than 130 on the same scale.

摘要翻译： 高性能的电接触由无Cd的Ag合金构成，不会产生毒性问题，绝缘性能优异，可确保钎焊和消耗特性的稳定性，可用于断路器或高负载电磁开关; 以及包括电接触器的电气设备。 特别是包含含有1〜9质量％Sn的杂质的Cd合金含量为0以下0.01以下的电接触体，具有由表面侧构成的双层结构的电接点 第一层和内部第二层，其中第一层具有10μm以上的厚度，并且在JIS上规定的微观尺度上具有150或更高的平均硬度，而第二层具有高于130的平均硬度。 规模。

公开(公告)号：US20060089745A1

公开(公告)日：2006-04-27

申请号：US11255649

申请日：2005-10-20

申请人： Yasuhiko Suzuki ,  Makoto Tanahashi

发明人： Yasuhiko Suzuki ,  Makoto Tanahashi

IPC分类号： G06F19/00

CPC分类号： G05B19/404 ,  G05B2219/49204 ,  G05B2219/49214 ,  G05B2219/49219

摘要： A method corrects thermal displacement of a machine tool having a rotational spindle. The method includes detecting a rotation speed of the spindle. A thermal displacement amount of the spindle in the current cycle of execution of a program is estimated by using an arithmetic expression that is based at least on the spindle rotation speed and a thermal displacement amount that has been estimated in the preceding cycle of execution of the program. The estimated thermal displacement amount in the current cycle is used as a correction amount for canceling the thermal displacement of the spindle. Therefore, thermal displacement of a machine tool is corrected with no complicated processes when a spindle rotation speed changes.

摘要翻译： 一种校正具有旋转主轴的机床的热位移的方法。 该方法包括检测主轴的转速。 通过使用至少基于主轴转速和在上一次执行循环中估计的热位移量的算术表达式来估计主节目执行程序中的主轴的热位移量 程序。 将当前循环中的估计热位移量用作用于消除主轴的热位移的校正量。 因此，当主轴转速变化时，机床的热位移不会发生复杂的过程而被校正。

公开(公告)号：US07026179B2

公开(公告)日：2006-04-11

申请号：US10873479

申请日：2004-06-23

申请人： Yasuhiko Suzuki ,  Takeharu Asano ,  Motonobu Takeya ,  Osamu Goto ,  Shinro Ikeda ,  Katsuyoshi Shibuya

发明人： Yasuhiko Suzuki ,  Takeharu Asano ,  Motonobu Takeya ,  Osamu Goto ,  Shinro Ikeda ,  Katsuyoshi Shibuya

IPC分类号： H01L21/00 ,  H01L29/22

CPC分类号： C30B25/18 ,  C30B25/02 ,  C30B29/40 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02647 ,  H01L33/007

摘要： When GaN or other nitride III-V compound semiconductor layers are grown on a substrate such as a sapphire substrate, thickness x of the substrate relative to thickness y of the nitride III-V compound semiconductor layers is controlled to satisfy 0

摘要翻译： 当GaN或其它氮化物III-V化合物半导体层在诸如蓝宝石衬底的衬底上生长时，衬底的厚度x相对于氮化物III-V化合物半导体层的厚度y被控制为满足0 =450μm。 或者，如果基板的最大尺寸为D（cm），则其翘曲H在0

公开(公告)号：US20050119784A1

公开(公告)日：2005-06-02

申请号：US10996618

申请日：2004-11-24

申请人： Yasuhiko Suzuki ,  Katsuki Sugiura ,  Masahiro Kurata ,  Makoto Tanahashi

发明人： Yasuhiko Suzuki ,  Katsuki Sugiura ,  Masahiro Kurata ,  Makoto Tanahashi

IPC分类号： B23Q15/00 ,  G05B19/4103 ,  G05B19/416 ,  G06F19/00

CPC分类号： G05B19/4163 ,  G05B19/4103

摘要： When a command radius r of a circular interpolation control exceeds a threshold value, a computer computes a speed limit for the circular speed at which the acceleration becomes constant. When the command radius r of the circular interpolation control is less than or equal to the threshold value, the computer 100 computes another speed limit for the circular speed at which rω3 or rω4 becomes constant, where ω is the angular frequency. The computer performs the circular interpolation control by safeguarding the circular speed from exceeding one of the speed limits in accordance with the command radius r of the circular interpolation control.

摘要翻译： 当圆弧插补控制的指令半径r超过阈值时，计算机计算加速度恒定的圆速度的速度限制。 当圆弧插补控制的指令半径r小于或等于阈值时，计算机100计算出在“romega”或“romega”4的圆速度下的另一速度限制， SUP>变为常数，其中ω是角频率。 计算机通过根据圆弧插补控制的指令半径r保护循环速度超过速度极限之一来进行圆弧插补控制。

公开(公告)号：US20050033460A1

公开(公告)日：2005-02-10

申请号：US10910084

申请日：2004-08-03

申请人： Makoto Tanahashi ,  Yasuhiko Suzuki

发明人： Makoto Tanahashi ,  Yasuhiko Suzuki

IPC分类号： B23Q15/00 ,  B23Q5/54 ,  B23Q15/12 ,  G05B11/01 ,  G05B11/32 ,  G05B13/02 ,  G05B19/18 ,  G05B19/19 ,  G05B19/404 ,  G05D3/12 ,  G06F19/00

CPC分类号： G05B19/19

摘要： A machine tool moves a driven member by use of a servomotor. A position control device controls the position of the driven member in accordance with full closed loop control. The position control device computes an integrated feedback value g in correspondence with a function F (VM, PM, Vm, Pm) in which four state amounts, motor speed VM, motor position PM, driven member speed Vm, and driven member position Pm are independent variables. The thrust instruction τ*, which is inputted to the servomotor, is compensated with the integrated feedback value g. The servomotor is thus optimally driven and controlled in accordance with full closed loop control.

摘要翻译： 机床通过使用伺服电机来移动从动构件。 位置控制装置根据全闭环控制来控制从动构件的位置。 位置控制装置根据其中四个状态量，电动机速度VM，电机位置PM，从动构件速度Vm和从动构件位置Pm的函数F（VM，PM，Vm，Pm）对应地计算积分反馈值g 自变量。 输入到伺服电动机的推力指令τ*用积分反馈值g补偿。 因此伺服电动机根据全闭环控制被最佳地驱动和控制。