Surface emitting laser element, surface emitting laser array, optical scanning device, and image forming apparatus
    8.
    发明授权
    Surface emitting laser element, surface emitting laser array, optical scanning device, and image forming apparatus 有权
    表面发射激光元件,表面发射激光器阵列,光学扫描装置和成像装置

    公开(公告)号:US08035676B2

    公开(公告)日:2011-10-11

    申请号:US12432872

    申请日:2009-04-30

    IPC分类号: B41J2/45 H01S5/00

    摘要: In a surface emitting laser element, on a substrate whose normal direction of a principal surface is inclined, a resonator structural body including an active layer, and a lower semiconductor DBR and an upper semiconductor DBR sandwiching the resonator structural body are stacked. A shape of a current passing through region in an oxide confinement structure of the upper semiconductor DBR is symmetrical to an axis passing through a center of the current passing through region parallel to an X axis and symmetrical to an axis passing through the center of the current passing through region parallel to a Y axis, and a length of the current passing through region is greater in the Y axis direction than in the X axis direction. A thickness of an oxidized layer surrounding the current passing through region is greater in the −Y direction than in the +X and −X directions.

    摘要翻译: 在表面发射激光元件中,在主表面的法线方向倾斜的基板上堆叠包括有源层的谐振器结构体和夹持谐振器结构体的下半导体DBR和上半导体DBR。 上半导体DBR的氧化物限制结构中的电流通过区域的形状与通过平行于X轴的电流通过区域的中心的轴对称,并且与通过电流的中心的轴对称 通过区域与Y轴平行,并且电流通过区域的长度在Y轴方向上比在X轴方向上大。 围绕电流通过区域的氧化层的厚度在-Y方向上大于在+ X和-X方向上的厚度。

    Surface-emitting laser element, surface-emitting laser array, optical scanner device, and image forming apparatus
    9.
    发明授权
    Surface-emitting laser element, surface-emitting laser array, optical scanner device, and image forming apparatus 有权
    表面发射激光元件,表面发射激光器阵列,光学扫描器装置和图像形成装置

    公开(公告)号:US08855159B2

    公开(公告)日:2014-10-07

    申请号:US12950365

    申请日:2010-11-19

    IPC分类号: H01S5/00

    摘要: A disclosed surface-emitting laser element includes a resonator structure having an active layer, a first semiconductor multilayer mirror and a second semiconductor multilayer mirror configured to sandwich the resonator structure having the active layer, an electrode provided around an emission region of a light-emitting surface, and a dielectric film provided in a peripheral portion within the emission region and outside a central portion of the emission region to make a reflectance of the peripheral portion lower than a reflectance of the central portion. In the surface-emitting laser element, an outer shape of a portion where the electrode provided around the emission region of the light-emitting surface is in contact with a contact layer includes corners.

    摘要翻译: 所公开的表面发射激光元件包括具有有源层的谐振器结构,第一半导体多层反射镜和第二半导体多层反射镜,其被配置为夹着具有有源层的谐振器结构,设置在发光区域的发射区域周围的电极 表面,以及设置在发光区域的周边部分和发光区域的中心部分外的电介质膜,以使周边部分的反射率低于中心部分的反射率。 在表面发射激光元件中,设置在发光面的发光区域周围的电极与接触层接触的部分的外形包括角部。

    SURFACE-EMITTING LASER, SURFACE-EMITTING LASER ARRAY, OPTICAL SCANNING APPARATUS AND IMAGE FORMING APPARATUS
    10.
    发明申请
    SURFACE-EMITTING LASER, SURFACE-EMITTING LASER ARRAY, OPTICAL SCANNING APPARATUS AND IMAGE FORMING APPARATUS 有权
    表面发射激光,表面发射激光阵列,光学扫描装置和图像形成装置

    公开(公告)号:US20120121297A1

    公开(公告)日:2012-05-17

    申请号:US13386725

    申请日:2010-09-14

    IPC分类号: G03G15/04 H01S5/42

    摘要: A surface-emitting laser includes a substrate; a lower semiconductor multilayer film reflector disposed on the substrate; a resonator structure including an active layer and disposed on the lower semiconductor multilayer film reflector; and an upper semiconductor multilayer film reflector disposed on the resonator structure. The second semiconductor multilayer film reflector includes a confinement structure in which a current passage region is surrounded by an oxidized portion of a selectively oxidized layer containing aluminum. An emission region includes a central portion and a peripheral portion, the peripheral portion being covered with a transparent dielectric film whose reflectivity is lower than a reflectivity of the central portion. The selectively oxidized layer has a thickness in a range from 30 nm to 40 nm. The temperature at which an oscillation threshold current is minimized is 60° C. or lower.

    摘要翻译: 表面发射激光器包括基板; 设置在所述基板上的下半导体多层膜反射器; 包括有源层并设置在下半导体多层膜反射器上的谐振器结构; 以及设置在谐振器结构上的上半导体多层膜反射器。 第二半导体多层膜反射器包括限制结构,其中电流通道区域被包含铝的选择性氧化层的氧化部分包围。 发射区域包括中心部分和周边部分,周边部分被反射率低于中心部分的反射率的透明电介质膜覆盖。 选择性氧化层的厚度为30nm〜40nm。 振荡阈值电流最小化的温度为60℃以下。