公开(公告)号：US20080113108A1

公开(公告)日：2008-05-15

申请号：US11558270

申请日：2006-11-09

申请人： Michael W. Stowell ,  Michael Liehr ,  Jose Manuel Dieguez-Campo

发明人： Michael W. Stowell ,  Michael Liehr ,  Jose Manuel Dieguez-Campo

IPC分类号： C23C4/00

CPC分类号： H01J37/32357 ,  C23C16/452 ,  C23C16/482 ,  C23C16/517 ,  C23C16/52 ,  H01J37/32339 ,  H01J37/32623

摘要： A system and method for coating a substrate with a film is described. One embodiment includes a process that provides a substrate on which to deposit a film; generates a plasma to produce radicals from a support gas; produces the radicals from the support gas; disassociates a precursor gas using the radicals; deposits material from the disassociated precursor gas on the substrate; and controls the amount of electromagnetic radiation to which the deposited material is exposed.

摘要翻译： 描述了用膜涂覆基材的系统和方法。 一个实施例包括提供其上沉积膜的基板的工艺; 产生等离子体以从支持气体产生自由基; 从支撑气体产生自由基; 使用自由基分离前体气体; 从衬底上分离的前体气体沉积材料; 并且控制沉积材料暴露于其中的电磁辐射的量。

公开(公告)号：US20070190808A1

公开(公告)日：2007-08-16

申请号：US11558217

申请日：2006-11-09

申请人： Michael W. Stowell ,  Jose M. Dieguez-Campo ,  Michael Liehr

发明人： Michael W. Stowell ,  Jose M. Dieguez-Campo ,  Michael Liehr

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： C23C16/0227 ,  C23C16/402 ,  C23C16/46 ,  C23C16/50 ,  H01J9/02 ,  H01J11/12 ,  H01J11/38

摘要： A system and method for producing a film is described. One embodiment of the process includes the following processes: providing a substrate comprising a glass plate, electrodes; and bus bars; heating the substrate to an approximate critical temperature; initiating the chemical vapor deposition process when the substrate is near the approximate critical temperature, thereby depositing a film on the substrate; maintaining the upper portion of the film at approximately the critical temperature while the chemical vapor deposition process is ongoing; terminating the chemical vapor deposition process once the film has reached a desired thickness; and cooling the substrate and the deposited film.

摘要翻译： 描述制造薄膜的系统和方法。 该方法的一个实施方案包括以下过程：提供包括玻璃板，电极的基材; 和巴士吧 将基板加热至近似临界温度; 当衬底接近临界温度时启动化学气相沉积工艺，从而在衬底上沉积膜; 在化学气相沉积过程正在进行的同时将膜的上部部分维持在大约临界温度; 一旦膜达到所需厚度，终止化学气相沉积工艺; 并冷却基板和沉积膜。

公开(公告)号：US06487986B1

公开(公告)日：2002-12-03

申请号：US09719525

申请日：2000-12-13

申请人： Michael Liehr ,  Lothar Schäfer

发明人： Michael Liehr ,  Lothar Schäfer

IPC分类号： C23C1600

CPC分类号： C23C16/274 ,  C23C16/54

摘要： In an apparatus for depositing polycrystalline diamond by plasma technology onto substrates (5) of large area, having a process chamber (1) with airlock (6a), a plurality of microwave plasma sources (9, 9′, . . . ) arranged in a common plane above the substrates (5) and extending transversely across the direction of substrate advancement, and gas inlet and gas outlet tubes (10, 10′, . . . , 11, 11′, . . . , 12, 12′, . . . , 13, 13′, . . . , 13a, . . . ) leading into the process chamber (1) are provided, a plurality of gas inlet and gas outlet tubes distributed over the length of the source are associated with each of the linear sources (9, 9′, . . . ), and the outlet openings of the gas inlet tubes being situated each directly above the linear source (9, 9′, . . . ), and the openings of the gas outlet tubes (13, 13′, . . . ) each in the area between two linear sources (9, 9′, . . . ) and in a plane which extends approximately through the core axes (5) of the linear sources (9, 9′, . . . ).

摘要翻译： 在用于通过等离子体技术将多晶金刚石沉积到具有具有气闸（6a）的处理室（1）的大面积的基板（5）上的装置中，多个微波等离子体源（9,9'...） 在衬底（5）上方并沿衬底前进方向横向延伸的公共平面，以及气体入口和气体出口管（10,10'，...，11,11'，...，12,12'， ...，13,13'，...，13a，...），分配在源的长度上的多个气体入口和气体出口管与每个 的线性源（9,9'，...），并且气体入口管的出口开口直接位于线性源（9,9'，...）的正上方，气体出口的开口 每个在两个线性源（9,9'，...）之间的区域中并且在大致延伸通过线性源（9,9'）的芯轴（5）的平面中的管（13,13'，...） 9'，... 。 ）。

公开(公告)号：US06340630B1

公开(公告)日：2002-01-22

申请号：US09536557

申请日：2000-03-28

申请人： Daniel George Berger ,  Guy Paul Brouillette ,  David Hirsch Danovitch ,  Peter Alfred Gruber ,  Bruce Lee Humphrey ,  Michael Liehr ,  William Thomas Motsiff ,  Carlos Juan Sambucetti

发明人： Daniel George Berger ,  Guy Paul Brouillette ,  David Hirsch Danovitch ,  Peter Alfred Gruber ,  Bruce Lee Humphrey ,  Michael Liehr ,  William Thomas Motsiff ,  Carlos Juan Sambucetti

IPC分类号： A01L2144

CPC分类号： H01L24/81 ,  H01L2224/05571 ,  H01L2224/05573 ,  H01L2224/11003 ,  H01L2224/11822 ,  H01L2224/13109 ,  H01L2224/13111 ,  H01L2224/13609 ,  H01L2224/81801 ,  H01L2924/00013 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/10329 ,  H01L2924/12042 ,  H05K3/3436 ,  H05K3/3463 ,  H05K3/3468 ,  H05K3/3478 ,  H05K2201/0379 ,  H05K2201/10992 ,  H05K2203/0113 ,  H05K2203/0338 ,  H05K2203/128 ,  Y02P70/613 ,  H01L2224/29099 ,  H01L2924/00 ,  H01L2224/05624 ,  H01L2924/00014 ,  H01L2224/05644 ,  H01L2224/05647

摘要： A method of forming interconnects on an electronic device that can be bonded to another electronic device at a low processing temperature can be carried out by depositing a first interconnect material on the electronic device forming protrusions and then depositing a second interconnect material to at least partially cover the protrusions, wherein the second interconnect material has a lower flow temperature than the first interconnect material. The method is carried out by flowing a molten solder into a mold having microcavities to fill the cavities and then allowed to solidify. The mold is then aligned with a silicon wafer containing chips deposited with high melting temperatures solder bumps such that each microcavity of the mold is aligned with each high melting temperature solder bump on the chip. The aligned mold/wafer assembly is then passed through a reflow furnace to effect the transfer of the low melting temperature solder in the mold cavities onto the tip of the high melting temperature solder bumps on the wafer. A dual metallurgical composition bump is thereby formed by the two different solder alloys.

摘要翻译： 可以在能够以低处理温度结合到另一电子设备的电子设备上形成互连的方法可以通过在形成突起的电子设备上沉积第一互连材料，然后沉积第二互连材料至少部分覆盖 所述突起，其中所述第二互连材料具有比所述第一互连材料低的流动温度。 该方法通过将熔融焊料流入具有微腔的模具中以填充空腔，然后使其固化来进行。 然后将模具与包含沉积有高熔点温度焊料凸块的芯片的硅晶片对准，使得模具的每个微腔与芯片上的每个高熔点温度焊料凸块对准。 然后将对准的模具/晶片组件通过回流炉，以将模腔中的低熔点焊料转移到晶片上的高熔点温度焊料凸块的尖端上。 由此由两种不同的焊料合金形成双金属组合物凸块。

公开(公告)号：US5897336A

公开(公告)日：1999-04-27

申请号：US864196

申请日：1997-05-28

申请人： Guy Paul Brouillette ,  David Hirsch Danovitch ,  Michael Liehr ,  William Thomas Motsiff ,  Judith Marie Roldan ,  Carlos Juan Sambucetti ,  Ravi F. Saraf

发明人： Guy Paul Brouillette ,  David Hirsch Danovitch ,  Michael Liehr ,  William Thomas Motsiff ,  Judith Marie Roldan ,  Carlos Juan Sambucetti ,  Ravi F. Saraf

IPC分类号： H01L21/60 ,  H01L23/556 ,  H05K1/18 ,  H05K3/24 ,  H05K3/32 ,  H05K3/34 ,  H01L21/44

CPC分类号： H01L24/83 ,  H01L23/556 ,  H01L24/29 ,  H01L24/32 ,  H01L2224/16225 ,  H01L2224/29101 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/29299 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/8319 ,  H01L2224/838 ,  H01L2924/00013 ,  H01L2924/01004 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01016 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/0781 ,  H01L2924/14 ,  H05K3/244 ,  H05K3/321

摘要： An interconnect system that has low alpha particle emission characteristics for use in an electronic device includes a semiconductor chip that has an upper surface and spaced apart electrically resistive bumps positioned on conductive regions of the upper surface, the electrically resistive bumps are made of a composite material of a polymer and metal particles, and a substrate that has conductive regions bonded to the electrically resistive bumps in a bonding process wherein the electrically resistive bumps convert to electrically conductive bumps after the bonding process.

摘要翻译： 具有用于电子设备的低α粒子发射特性的互连系统包括半导体芯片，该半导体芯片具有位于上表面的导电区域上的上表面和间隔开的电阻凸起，电阻凸起由复合材料制成 的聚合物和金属颗粒，以及在接合工艺中具有与电阻凸块接合的导电区域的基板，其中在粘合工艺之后电阻凸块转换为导电凸块。

公开(公告)号：US06175183B1

公开(公告)日：2001-01-16

申请号：US09315032

申请日：1999-05-20

申请人： Michael Liehr

发明人： Michael Liehr

IPC分类号： H01J146

CPC分类号： H01J37/3222 ,  H01J37/32192 ,  H05H1/46 ,  H05H2001/463

摘要： A device for producing plasma in a vacuum chamber (13) with the help of electromagnetic alternating fields, in which a rod-shaped conductor (3) that is inside a pipe (2) and is made of an insulating material and is guided into the vacuum chamber (13). The inner diameter of the insulating pipe (2) is larger than the diameter of the conductor (3). The insulating pipe (2) is held in the wall (1) of the vacuum chamber (13) at one end, and its outer surface is sealed across from the vacuum chamber wall. The conductor (3) is connected to a source (9) for producing the electromagnetic alternating field. A pipe-shaped conductor (4) extends coaxially to the rod-shaped conductor (3) in the annulus formed by the rod-shaped conductor (3) and the insulating pipe (2), whereby the radial inner ring slot (14) formed between the rod-shaped conductor (3) and the pipe-shaped conductor (4) corresponds to the waveguide (10) of the source (9). The radial outer ring slot (15) formed by the insulating pipe (2) and the pipe-shaped conductor (4) is connected to the waveguide (10′) of a second source (8).

摘要翻译： 一种借助于电磁交变场在真空室（13）中产生等离子体的装置，其中在管（2）内部并由绝缘材料制成的棒状导体（3）被引导到 真空室（13）。 绝缘管（2）的内径大于导体（3）的直径。 绝缘管（2）在一端保持在真空室（13）的壁（1）中，其外表面与真空室壁相对地密封。 导体（3）连接到用于产生电磁交变场的源（9）。 管状导体（4）同轴地延伸到由杆状导体（3）和绝缘管（2）形成的环形空间中的杆状导体（3）上，由此形成径向内环槽（14） 杆状导体（3）与管状导体（4）之间的距离对应于源极（9）的波导管（10）。 由绝缘管（2）和管状导体（4）形成的径向外环槽（15）连接到第二源（8）的波导（10'）。

公开(公告)号：US5900065A

公开(公告)日：1999-05-04

申请号：US906461

申请日：1997-08-05

申请人： Michael Liehr ,  Claus-Peter Klages ,  Gunter Brauer

发明人： Michael Liehr ,  Claus-Peter Klages ,  Gunter Brauer

IPC分类号： C30B29/04 ,  C23C16/02 ,  C23C16/26 ,  C23C16/27 ,  C23C16/50 ,  C23C16/511 ,  C23C16/54 ,  H01J37/32 ,  C23C16/00

CPC分类号： C23C16/274 ,  C23C16/02 ,  C23C16/511 ,  C23C16/54 ,  H01J37/32192

摘要： In an apparatus for the deposition of polycrystalline diamond on large, flat substrates (3) by the plasma method, with a vacuum chamber (4); with locks for the inward and outward transfer of the substrates; with a device installed in the chamber (4) for conveying the substrates (3) through at least one, preferably through two treatment stations; with hot-filament sources (5, 5', . . . ) forming a first group, installed above the plane of the substrates; with microwave plasma sources (8, 8', . . . ) forming a second group; with an electrode (11) fed with radio frequency underneath the plane of the substrates for generating a bias voltage; and with gas feed pipes (6, 9) opening into the vacuum chamber (4), the hot-filament arrangements (5, 5', . . . ), designed as linear sources, are arranged transversely to the substrate transport direction (a) and form a first coating zone (Z.sup.1), where the microwave plasma sources (8, 8', . . . ) are arranged in a row a certain distance away from, and parallel to, the hot-filament sources (5, 5', . . . ) and form together a second coating zone (Z).

摘要翻译： 在用于通过等离子体方法在大的平坦基板（3）上沉积多晶金刚石的设备中，具有真空室（4）; 具有用于衬底的向内和向外转移的锁; 其中装置安装在所述腔室（4）中，用于通过至少一个，优选通过两个处理站传送所述基底（3） 具有安装在基板平面上方的形成第一组的热丝源（5,5'，...） 微波等离子体源（8,8'，...）形成第二组; 其中在所述基板的平面下方馈送射频的电极（11），用于产生偏置电压; 并且通过进入真空室（4）的气体供给管（6,9），被设计为线性源的热丝布置（5,5'，...）横向于基板输送方向（a ）并形成第一涂层区（Z1），其中微波等离子体源（8,8'......）排列成一排距离并平行于热丝源（5,5） '，...）并一起形成第二涂层区（Z）。

公开(公告)号：US20070095281A1

公开(公告)日：2007-05-03

申请号：US11264540

申请日：2005-11-01

申请人： Michael Stowell ,  Michael Liehr ,  Stephan Wieder ,  Jose Dieguez-Campo

发明人： Michael Stowell ,  Michael Liehr ,  Stephan Wieder ,  Jose Dieguez-Campo

IPC分类号： C23C16/00

CPC分类号： C23C16/515

摘要： One embodiment of the present invention is a system for depositing films on a substrate. This systems includes a vacuum chamber; a linear discharge tube housed inside the vacuum chamber; a magnetron configured to generate a microwave power signal that can be applied to the linear discharge tube; a power supply configured to provide a signal to the magnetron; and a pulse control connected to the power supply. The pulse control is configured to control the duty cycle of the plurality of pulses, the frequency of the plurality of pulses, and/or the contour of the plurality of pulses.

摘要翻译： 本发明的一个实施例是用于在衬底上沉积膜的系统。 该系统包括真空室; 容纳在真空室内的线性放电管; 磁控管，其被配置为产生可施加到所述线性放电管的微波功率信号; 电源，被配置为向磁控管提供信号; 以及连接到电源的脉冲控制。 脉冲控制被配置为控制多个脉冲的占空比，多个脉冲的频率和/或多个脉冲的轮廓。

公开(公告)号：US06242053B1

公开(公告)日：2001-06-05

申请号：US09081209

申请日：1998-05-20

申请人： Friedrich Anderle ,  Jürgen Henrich ,  Wilfried Dicken ,  Heinrich Grünwald ,  Michael Liehr ,  Klaus Nauenburg ,  Rudolf Beckmann

发明人： Friedrich Anderle ,  Jürgen Henrich ,  Wilfried Dicken ,  Heinrich Grünwald ,  Michael Liehr ,  Klaus Nauenburg ,  Rudolf Beckmann

IPC分类号： C08F246

CPC分类号： C03C17/005 ,  B05D1/62 ,  C23C16/509 ,  C23C16/511 ,  H01J37/32082 ,  H01J2237/332 ,  H05H1/46 ,  H05H2001/463

摘要： A process and device is shown for coating the delineating surfaces of a hollow object, preferably a hollow object having at least one sealable opening, by means of plasma coating, via the action of plasma on the delineating surface of the hollow object that is to be coated.

摘要翻译： 示出了一种工艺和装置，用于通过等离子体涂覆在中空物体的描绘表面上等离子体的作用来涂覆中空物体的描绘表面，优选具有至少一个可密封开口的中空物体 涂层。

公开(公告)号：US6161501A

公开(公告)日：2000-12-19

申请号：US217900

申请日：1998-12-22

申请人： Michael Liehr

发明人： Michael Liehr

IPC分类号： H05H1/46 ,  C23C16/00

CPC分类号： H05H1/46

摘要： In a device for generating plasma in a vacuum chamber (9) with the aid of alternating electromagnetic fields, at least one rod-shaped conductor (7) is guided inside of a tube (16) made of insulating material through the vacuum chamber (9), the insulating tube (16) is held at its ends in one or in the opposing walls (6;17,17a) of the vacuum chamber (9) and is sealed off, wherein one or both ends of the rod-shaped conductor (7) are connected to a generator (18,19), wherein one or both ends of the rod-shaped conductor (7) are surrounded by outer conductors (20,21), each extending from the generator (18,19) to the respective inside wall surface (22,22a) of the vacuum chamber (9), wherein, in the area of the wall passages, the rod-shaped conductor (7) connected to the sources (18,19) and the outer conductors (20,21) surrounding it are each provided with a branch constituting a bypass (23,24), wherein a second rod-shaped conductor (26) extending into or through the vacuum chamber (9) surrounded by a second insulating tube (25), is connected to each of these bypasses (23,24), wherein the length of each bypass amounts to .lambda./2.

摘要翻译： 在借助于交变电磁场在真空室（9）中产生等离子体的装置中，至少一个棒状导体（7）被引导通过真空室（9）由绝缘材料制成的管（16）内部 ），绝缘管（16）的端部固定在真空室（9）的一个或相对的壁（6; 17,17a）中，并被密封，其中杆状导体的一端或两端 （7）连接到发电机（18,19），其中所述杆状导体（7）的一端或两端由外导体（20,21）包围，每个从所述发电机（18,19）延伸到 所述真空室（9）的相应的内壁表面（22,22a），其中在所述壁通道的区域中，连接到所述源（18,19）和外导体（18,19）的所述杆状导体（7） 20,21）各自设置有构成旁路（23,24）的分支，其中延伸到真空室（9）中或通过真空室（9）的第二棒状导体（26） 由第二绝缘管（25）引出，连接到这些旁路（23,24）中的每一个，其中每个旁路的长度达到λ/ 2。