摘要:
A multilayer wiring board is so constituted that: a group of electronic part mounting capture pads are provided on one surface thereof; a first wiring layer formed on an uppermost layer thereof includes a first connection part arranged on the same surface as the surface where the pads are provided, and a second connection part spaced from the first connection part; the pad and the first connection part are electrically connected through a conductor wire, and the conductor wire is provided in a first insulating layer laminated on the first wiring layer; and the first connection part is connected linearly or curvedly to the second connection part through a first wiring pattern.
摘要:
A wiring board includes a plate-shaped resin member; chip connection pads provided in the resin member, the chip connection pads having connection surfaces electrically connected to electrode pads provided on a semiconductor chip, the connection surfaces being situated in substantially the same plane as a first surface of the resin member, the first surface being a side where the semiconductor chip is mounted; pads provided in a portion of the resin member, the portion being situated outside an area where the chip connection pads are formed; lead wirings connected to the pads; and conductive wires sealed by the resin member, the conductive wires electrically connecting the chip connection pads and the pads to each other.
摘要:
There is provided a multilayer wiring substrate on which at least one semiconductor element is mounted. The multilayer wiring substrate includes: a baseboard; a first wiring layer formed on the baseboard and having a plurality of first wiring portions; an insulating layer formed on the baseboard; a second wiring layer formed on the insulating layer and having a plurality of second wiring portions, the second wiring portions being electrically connected to each other via a conductor wire, the conductor wire being arranged within the insulating layer three-dimensionally in a curved manner; and conductor portions configured to pass through the insulating layer and connecting the first wiring portions and the second wiring portions.
摘要:
A solid oxide type fuel cell has a solid electrolyte substrate with a flat plate shape, and a cathode electrode layer is formed in a flat plate shape on one surface of the substrate and an anode electrode layer is formed in a flat plate shape on the other surface. The cathode electrode layer and the anode electrode layer are formed by the same electrode formation material. One or both of the cathode electrode layer and the anode electrode layer contain the electrode formation material and a solid electrolyte, and a concentration of the solid electrolyte included in the cathode electrode layer or the anode electrode layer increases with approach to the solid electrolyte substrate. Also, the solid oxide type fuel cell is formed by simultaneously calcining the solid electrolyte substrate, the cathode electrode layer and the anode electrode layer.
摘要:
A semiconductor element sealed substrate including a semiconductor element covered by an insulating layer is fabricated while a wiring substrate formed by stacking wiring layers is fabricated by a process different from the process of fabricating the semiconductor element sealed substrate. Next, the semiconductor element sealed substrate and the wiring substrate are stacked on each other in such a way that electrode terminals of the semiconductor element and corresponding conductive bumps on the outermost wiring layer face each other. The electrode terminals and the conductive bumps are thus connected to each other.
摘要:
A semiconductor device includes a semiconductor chip having a connection electrode on a surface side, and a resin substrate sealing a periphery of the semiconductor chip and formed to have a thickness from a back surface of the semiconductor chip to a lower side thereof, and the resin substrate whose lower surface is positioned to a lower side than the back surface of the semiconductor chip. A wiring layer is connected directly to the connection electrode of the semiconductor chip without the intervention of solder.
摘要:
A semiconductor device includes: a semiconductor element that has a first surface on which an electrode terminal is formed and a second surface opposite to the first surface; a resin mold portion in which the semiconductor element is embedded and that has a third surface exposing the first surface and a fourth surface opposite to the third surface; and a wiring layer formed on the third surface and the first surface, wherein a plurality of conducting portions are provided in the resin mold portion, which penetrate the resin mold portion along a thickness direction thereof to be electrically connected to the wiring layer.