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1.发明授权Semiconductor device and method of forming thermal interface material and heat spreader over semiconductor die 有权在半导体芯片上形成热界面材料和散热器的半导体器件和方法公开(公告)号：US09281228B2
公开(公告)日：2016-03-08
申请号：US13287035
申请日：2011-11-01
申请人： DaeSik Choi , JoungIn Yang , MinJung Kim , Sang Mi Park , MinWook Yu
发明人： DaeSik Choi , JoungIn Yang , MinJung Kim , Sang Mi Park , MinWook Yu
IPC分类号： H01L21/00 , H01L21/683 , H01L23/36 , H01L23/42 , H01L29/06 , H01L25/065 , H01L23/00
CPC分类号： H01L21/6835 , H01L23/36 , H01L23/42 , H01L24/05 , H01L24/13 , H01L24/16 , H01L24/29 , H01L24/32 , H01L24/34 , H01L24/36 , H01L24/37 , H01L24/40 , H01L24/73 , H01L24/81 , H01L24/83 , H01L24/92 , H01L24/97 , H01L25/0655 , H01L29/0657 , H01L2221/68345 , H01L2224/0345 , H01L2224/03452 , H01L2224/0346 , H01L2224/0401 , H01L2224/04026 , H01L2224/04042 , H01L2224/05571 , H01L2224/05611 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/1132 , H01L2224/11334 , H01L2224/1145 , H01L2224/1146 , H01L2224/11849 , H01L2224/11901 , H01L2224/131 , H01L2224/13111 , H01L2224/13113 , H01L2224/13116 , H01L2224/13124 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/16225 , H01L2224/26145 , H01L2224/29007 , H01L2224/29011 , H01L2224/2919 , H01L2224/32225 , H01L2224/32245 , H01L2224/37124 , H01L2224/37147 , H01L2224/40095 , H01L2224/40225 , H01L2224/48091 , H01L2224/73204 , H01L2224/73253 , H01L2224/73265 , H01L2224/81191 , H01L2224/81815 , H01L2224/83104 , H01L2224/83191 , H01L2224/8485 , H01L2224/92125 , H01L2224/92225 , H01L2224/94 , H01L2224/97 , H01L2924/00011 , H01L2924/00014 , H01L2924/01322 , H01L2924/10158 , H01L2924/12041 , H01L2924/12042 , H01L2924/1306 , H01L2924/13091 , H01L2924/15311 , H01L2924/16251 , H01L2924/181 , H01L2924/19105 , H01L2224/81 , H01L2924/00 , H01L2924/01082 , H01L2224/11 , H01L2924/0665 , H01L2224/27 , H01L2224/83 , H01L2224/32057 , H01L2924/00012 , H01L2924/014 , H01L2224/05552 , H01L2224/81805
摘要： A semiconductor device has a semiconductor die mounted to a substrate. A recess is formed in a back surface of the semiconductor die to an edge of the semiconductor die with sidewalls on at least two sides of the semiconductor die. The sidewalls are formed by removing a portion of the back surface of the die, or by forming a barrier layer on at least two sides of the die. A channel can be formed in the back surface of the semiconductor die to contain the TIM. A TIM is formed in the recess. A heat spreader is mounted in the recess over the TIM with a down leg portion of the heat spreader thermally connected to the substrate. The sidewalls contain the TIM to maintain uniform coverage of the TIM between the heat spreader and back surface of the semiconductor die.
摘要翻译： 半导体器件具有安装到衬底的半导体管芯。 在半导体管芯的后表面中形成有在半导体管芯的至少两侧具有侧壁的半导体管芯的边缘的凹部。 侧壁通过去除模具的后表面的一部分，或者通过在模具的至少两侧上形成阻挡层而形成。 可以在半导体管芯的后表面中形成通道以容纳TIM。 在凹部中形成有TIM。 散热器安装在TIM上的凹部中，散热器的下脚部分热连接到基板。 侧壁包含TIM以保持散热器和半导体管芯的后表面之间的TIM的均匀覆盖。
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2.发明申请Semiconductor Device and Method of Forming Thermal Interface Material and Heat Spreader Over Semiconductor Die 有权半导体器件和形成热界面材料和散热器的半导体模具的方法公开(公告)号：US20130105963A1
公开(公告)日：2013-05-02
申请号：US13287035
申请日：2011-11-01
申请人： DaeSik Choi , JoungIn Yang , MinJung Kim , Sang Mi Park , MinWook Yu
发明人： DaeSik Choi , JoungIn Yang , MinJung Kim , Sang Mi Park , MinWook Yu
CPC分类号： H01L21/6835 , H01L23/36 , H01L23/42 , H01L24/05 , H01L24/13 , H01L24/16 , H01L24/29 , H01L24/32 , H01L24/34 , H01L24/36 , H01L24/37 , H01L24/40 , H01L24/73 , H01L24/81 , H01L24/83 , H01L24/92 , H01L24/97 , H01L25/0655 , H01L29/0657 , H01L2221/68345 , H01L2224/0345 , H01L2224/03452 , H01L2224/0346 , H01L2224/0401 , H01L2224/04026 , H01L2224/04042 , H01L2224/05571 , H01L2224/05611 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/1132 , H01L2224/11334 , H01L2224/1145 , H01L2224/1146 , H01L2224/11849 , H01L2224/11901 , H01L2224/131 , H01L2224/13111 , H01L2224/13113 , H01L2224/13116 , H01L2224/13124 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/16225 , H01L2224/26145 , H01L2224/29007 , H01L2224/29011 , H01L2224/2919 , H01L2224/32225 , H01L2224/32245 , H01L2224/37124 , H01L2224/37147 , H01L2224/40095 , H01L2224/40225 , H01L2224/48091 , H01L2224/73204 , H01L2224/73253 , H01L2224/73265 , H01L2224/81191 , H01L2224/81815 , H01L2224/83104 , H01L2224/83191 , H01L2224/8485 , H01L2224/92125 , H01L2224/92225 , H01L2224/94 , H01L2224/97 , H01L2924/00011 , H01L2924/00014 , H01L2924/01322 , H01L2924/10158 , H01L2924/12041 , H01L2924/12042 , H01L2924/1306 , H01L2924/13091 , H01L2924/15311 , H01L2924/16251 , H01L2924/181 , H01L2924/19105 , H01L2224/81 , H01L2924/00 , H01L2924/01082 , H01L2224/11 , H01L2924/0665 , H01L2224/27 , H01L2224/83 , H01L2224/32057 , H01L2924/00012 , H01L2924/014 , H01L2224/05552 , H01L2224/81805
摘要： A semiconductor device has a semiconductor die mounted to a substrate. A recess is formed in a back surface of the semiconductor die to an edge of the semiconductor die with sidewalls on at least two sides of the semiconductor die. The sidewalls are formed by removing a portion of the back surface of the die, or by forming a barrier layer on at least two sides of the die. A channel can be formed in the back surface of the semiconductor die to contain the TIM. A TIM is formed in the recess. A heat spreader is mounted in the recess over the TIM with a down leg portion of the heat spreader thermally connected to the substrate. The sidewalls contain the TIM to maintain uniform coverage of the TIM between the heat spreader and back surface of the semiconductor die.
摘要翻译： 半导体器件具有安装到衬底的半导体管芯。 在半导体管芯的后表面中形成有在半导体管芯的至少两侧具有侧壁的半导体管芯的边缘的凹部。 通过去除模具的后表面的一部分，或者通过在模具的至少两侧上形成阻挡层来形成侧壁。 可以在半导体管芯的后表面中形成通道以容纳TIM。 在凹部中形成有TIM。 散热器安装在TIM上的凹部中，散热器的下脚部分热连接到基板。 侧壁包含TIM以保持散热器和半导体管芯的后表面之间的TIM的均匀覆盖。
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3.发明申请Semiconductor Device and Method of Depositing Underfill Material With Uniform Flow Rate 有权半导体器件和沉积具有均匀流速的底层填充材料的方法公开(公告)号：US20130299995A1
公开(公告)日：2013-11-14
申请号：US13466945
申请日：2012-05-08
申请人： KyungHoon Lee , JoungIn Yang , Sang Mi Park , DaeSik Choi , YiSu Park
发明人： KyungHoon Lee , JoungIn Yang , Sang Mi Park , DaeSik Choi , YiSu Park
CPC分类号： H01L21/563 , H01L24/16 , H01L24/29 , H01L24/83 , H01L2224/131 , H01L2224/13111 , H01L2224/13113 , H01L2224/13116 , H01L2224/13124 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/16225 , H01L2224/16238 , H01L2224/26175 , H01L2224/2919 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/73204 , H01L2224/73265 , H01L2224/81191 , H01L2224/81203 , H01L2224/81815 , H01L2224/83104 , H01L2224/83385 , H01L2224/92125 , H01L2924/01322 , H01L2924/12041 , H01L2924/12042 , H01L2924/1306 , H01L2924/13091 , H01L2924/15311 , H01L2924/181 , H01L2924/00015 , H01L2924/00014 , H01L2924/0665 , H01L2924/014 , H01L2924/00
摘要： A semiconductor device has a substrate and insulating layer formed over a surface of the substrate. A first conductive layer is formed over the surface of the substrate. A second conductive layer is formed over an opposing surface of the substrate. A conductive via is formed through the substrate. An opening is formed in the insulating layer while leaving the first conductive layer intact. The opening narrows with a non-linear side or linear side. The opening can have a rectangular shape. A semiconductor die is mounted over the surface of the substrate. An underfill material is deposited between the semiconductor die and substrate. The opening in the insulating layer reduces a flow rate of the underfill material proximate to the opening. The flow rate of the underfill material proximate to the opening is substantially equal to a flow rate of the underfill material away from the opening.
摘要翻译： 半导体器件具有在衬底的表面上形成的衬底和绝缘层。 在衬底的表面上形成第一导电层。 在衬底的相对表面上形成第二导电层。 通过衬底形成导电通孔。 在绝缘层中形成开口，同时保持第一导电层的完整性。 开口以非线性侧面或线性侧面变窄。 开口可以具有矩形形状。 半导体管芯安装在衬底的表面上。 在半导体管芯和衬底之间沉积底部填充材料。 绝缘层中的开口减小靠近开口的底部填充材料的流速。 靠近开口的底部填充材料的流速基本上等于底部填充材料远离开口的流速。
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4.发明授权Semiconductor device and method of controlling warpage in semiconductor package 有权半导体封装中的翘曲控制半导体装置及其控制方法公开(公告)号：US09406579B2
公开(公告)日：2016-08-02
申请号：US13471314
申请日：2012-05-14
申请人： DaeSik Choi , JoungIn Yang , Sang Mi Park , WonIl Kwon , YiSu Park
发明人： DaeSik Choi , JoungIn Yang , Sang Mi Park , WonIl Kwon , YiSu Park
IPC分类号： H01L23/31 , H01L21/56 , H01L23/00 , H01L23/367 , H01L23/42
CPC分类号： H01L23/3121 , H01L21/563 , H01L23/3128 , H01L23/367 , H01L23/42 , H01L24/97 , H01L2224/05571 , H01L2224/16225 , H01L2224/16227 , H01L2224/32225 , H01L2224/48091 , H01L2224/73204 , H01L2224/73253 , H01L2224/73265 , H01L2224/81191 , H01L2224/92125 , H01L2224/97 , H01L2924/01322 , H01L2924/12041 , H01L2924/12042 , H01L2924/1306 , H01L2924/13091 , H01L2924/15311 , H01L2924/181 , H01L2924/351 , H01L2924/00014 , H01L2924/00 , H01L2224/81 , H01L2924/00012
摘要： A semiconductor device has a substrate. An insulating layer is formed over a surface of the substrate. A semiconductor die is mounted over the surface of the substrate. A channel is formed in the insulating layer around the semiconductor die. An underfill material is deposited between the semiconductor die and the substrate and in the channel. A heat spreader is mounted over the semiconductor die with the heat spreader thermally connected to the substrate. A thermal interface material is formed over the semiconductor die. The underfill material is deposited between the semiconductor die and the substrate along a first edge of the semiconductor die and along a second edge of the semiconductor die opposite the first edge. The channel extends partially through the insulating layer formed over the substrate with the insulating layer maintaining coverage over the substrate within a footprint of the channel.
摘要翻译： 半导体器件具有基板。 在衬底的表面上形成绝缘层。 半导体管芯安装在衬底的表面上。 在半导体管芯周围的绝缘层中形成沟道。 在半导体管芯和衬底之间以及沟道中沉积底部填充材料。 散热器安装在半导体管芯上，散热器热连接到基板上。 在半导体管芯上形成热界面材料。 底部填充材料沿着半导体管芯的第一边缘并沿着与第一边缘相对的半导体管芯的第二边缘沉积在半导体管芯和衬底之间。 该通道部分地延伸穿过衬底上形成的绝缘层，其中绝缘层保持在通道的覆盖区内的衬底上的覆盖。
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5.发明申请Semiconductor Device and Method of Controlling Warpage in Semiconductor Package 有权半导体封装中控制翘曲的半导体器件和方法公开(公告)号：US20130300004A1
公开(公告)日：2013-11-14
申请号：US13471314
申请日：2012-05-14
申请人： DaeSik Choi , JoungIn Yang , Sang Mi Park , WonIl Kwon , YiSu Park
发明人： DaeSik Choi , JoungIn Yang , Sang Mi Park , WonIl Kwon , YiSu Park
CPC分类号： H01L23/3121 , H01L21/563 , H01L23/3128 , H01L23/367 , H01L23/42 , H01L24/97 , H01L2224/05571 , H01L2224/16225 , H01L2224/16227 , H01L2224/32225 , H01L2224/48091 , H01L2224/73204 , H01L2224/73253 , H01L2224/73265 , H01L2224/81191 , H01L2224/92125 , H01L2224/97 , H01L2924/01322 , H01L2924/12041 , H01L2924/12042 , H01L2924/1306 , H01L2924/13091 , H01L2924/15311 , H01L2924/181 , H01L2924/351 , H01L2924/00014 , H01L2924/00 , H01L2224/81 , H01L2924/00012
摘要： A semiconductor device has a substrate. An insulating layer is formed over a surface of the substrate. A semiconductor die is mounted over the surface of the substrate. A channel is formed in the insulating layer around the semiconductor die. An underfill material is deposited between the semiconductor die and the substrate and in the channel. A heat spreader is mounted over the semiconductor die with the heat spreader thermally connected to the substrate. A thermal interface material is formed over the semiconductor die. The underfill material is deposited between the semiconductor die and the substrate along a first edge of the semiconductor die and along a second edge of the semiconductor die opposite the first edge. The channel extends partially through the insulating layer formed over the substrate with the insulating layer maintaining coverage over the substrate within a footprint of the channel.
摘要翻译： 半导体器件具有基板。 在衬底的表面上形成绝缘层。 半导体管芯安装在衬底的表面上。 在半导体管芯周围的绝缘层中形成沟道。 在半导体管芯和衬底之间以及沟道中沉积底部填充材料。 散热器安装在半导体管芯上，散热器热连接到基板上。 在半导体管芯上形成热界面材料。 底部填充材料沿着半导体管芯的第一边缘并且沿着与第一边缘相对的半导体管芯的第二边缘沉积在半导体管芯和衬底之间。 该通道部分地延伸穿过衬底上形成的绝缘层，其中绝缘层保持在通道的覆盖区内的衬底上的覆盖。
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6.发明授权Semiconductor device and method of depositing underfill material with uniform flow rate 有权具有均匀流量的沉积底部填充材料的半导体器件和方法公开(公告)号：US09390945B2
公开(公告)日：2016-07-12
申请号：US13466945
申请日：2012-05-08
申请人： KyungHoon Lee , JoungIn Yang , Sang Mi Park , DaeSik Choi , YiSu Park
发明人： KyungHoon Lee , JoungIn Yang , Sang Mi Park , DaeSik Choi , YiSu Park
CPC分类号： H01L21/563 , H01L24/16 , H01L24/29 , H01L24/83 , H01L2224/131 , H01L2224/13111 , H01L2224/13113 , H01L2224/13116 , H01L2224/13124 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/16225 , H01L2224/16238 , H01L2224/26175 , H01L2224/2919 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/73204 , H01L2224/73265 , H01L2224/81191 , H01L2224/81203 , H01L2224/81815 , H01L2224/83104 , H01L2224/83385 , H01L2224/92125 , H01L2924/01322 , H01L2924/12041 , H01L2924/12042 , H01L2924/1306 , H01L2924/13091 , H01L2924/15311 , H01L2924/181 , H01L2924/00015 , H01L2924/00014 , H01L2924/0665 , H01L2924/014 , H01L2924/00
摘要： A semiconductor device has a substrate and insulating layer formed over a surface of the substrate. A first conductive layer is formed over the surface of the substrate. A second conductive layer is formed over an opposing surface of the substrate. A conductive via is formed through the substrate. An opening is formed in the insulating layer while leaving the first conductive layer intact. The opening narrows with a non-linear side or linear side. The opening can have a rectangular shape. A semiconductor die is mounted over the surface of the substrate. An underfill material is deposited between the semiconductor die and substrate. The opening in the insulating layer reduces a flow rate of the underfill material proximate to the opening. The flow rate of the underfill material proximate to the opening is substantially equal to a flow rate of the underfill material away from the opening.
摘要翻译： 半导体器件具有在衬底的表面上形成的衬底和绝缘层。 在衬底的表面上形成第一导电层。 在衬底的相对表面上形成第二导电层。 通过衬底形成导电通孔。 在绝缘层中形成开口，同时使第一导电层完好无损。 开口以非线性侧面或线性侧面变窄。 开口可以具有矩形形状。 半导体管芯安装在衬底的表面上。 在半导体管芯和衬底之间沉积底部填充材料。 绝缘层中的开口减小靠近开口的底部填充材料的流速。 靠近开口的底部填充材料的流速基本上等于底部填充材料远离开口的流速。
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7.发明申请公开(公告)号：US20120273938A1
公开(公告)日：2012-11-01
申请号：US13098448
申请日：2011-04-30
申请人： DaeSik Choi , Sang Mi Park
发明人： DaeSik Choi , Sang Mi Park
IPC分类号： H01L23/498 , H01L21/60
CPC分类号： H01L23/49816 , H01L21/4853 , H01L23/3192 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L24/81 , H01L24/94 , H01L2224/0332 , H01L2224/0345 , H01L2224/03452 , H01L2224/03462 , H01L2224/03464 , H01L2224/0347 , H01L2224/03474 , H01L2224/0361 , H01L2224/03912 , H01L2224/0401 , H01L2224/05572 , H01L2224/05611 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/0566 , H01L2224/05666 , H01L2224/05671 , H01L2224/10145 , H01L2224/1132 , H01L2224/1133 , H01L2224/11334 , H01L2224/1145 , H01L2224/11452 , H01L2224/11462 , H01L2224/11464 , H01L2224/11849 , H01L2224/11901 , H01L2224/11903 , H01L2224/13014 , H01L2224/13016 , H01L2224/13019 , H01L2224/13022 , H01L2224/13076 , H01L2224/13082 , H01L2224/131 , H01L2224/13111 , H01L2224/13113 , H01L2224/13116 , H01L2224/13124 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/16237 , H01L2224/8114 , H01L2224/81191 , H01L2224/81193 , H01L2224/81203 , H01L2224/81411 , H01L2224/81424 , H01L2224/81439 , H01L2224/81444 , H01L2224/81447 , H01L2224/81455 , H01L2224/81815 , H01L2224/94 , H01L2924/01029 , H01L2924/01322 , H01L2924/12041 , H01L2924/12042 , H01L2924/1306 , H01L2924/13091 , H01L2924/181 , H01L2924/381 , H01L2924/3841 , H01L2924/00014 , H01L2924/01074 , H01L2924/01082 , H01L2924/014 , H01L2224/11 , H01L2224/1161 , H01L2924/00
摘要： A semiconductor device has a semiconductor die with a first conductive layer formed over an active surface of the semiconductor die. An insulation layer is formed over the active surface of the semiconductor die. A second conductive layer is conformally applied over the insulating layer and first conductive layer. Conductive pillars are formed over the first conductive layer. Conductive rings are formed around a perimeter of the conductive pillars. A conductive material is deposited over the surface of the conductive pillars within the conductive rings. A substrate has a third conductive layer formed over a surface of the substrate. The semiconductor die is mounted to a substrate with the third conductive layer electrically connected to the conductive material within the conductive rings. The conductive rings inhibit outward flow of the conductive material from under the conductive pillars to prevent electrical bridging between adjacent conductive pillars.
摘要翻译： 半导体器件具有半导体管芯，其具有形成在半导体管芯的有源表面上的第一导电层。 在半导体管芯的有效表面上形成绝缘层。 第二导电层共形施加在绝缘层和第一导电层上。 导电柱形成在第一导电层上。 导电环围绕导电柱的周边形成。 在导电环内的导电柱的表面上沉积导电材料。 衬底具有形成在衬底的表面上的第三导电层。 将半导体管芯安装到衬底上，其中第三导电层与导电环内的导电材料电连接。 导电环阻止导电材料从导电柱下方向外流动，以防止相邻导电柱之间的电桥接。
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8.发明授权公开(公告)号：US09252094B2
公开(公告)日：2016-02-02
申请号：US13098448
申请日：2011-04-30
申请人： DaeSik Choi , Sang Mi Park
发明人： DaeSik Choi , Sang Mi Park
IPC分类号： H01L21/76 , H01L23/498 , H01L21/48 , H01L23/00 , H01L23/31
CPC分类号： H01L23/49816 , H01L21/4853 , H01L23/3192 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L24/81 , H01L24/94 , H01L2224/0332 , H01L2224/0345 , H01L2224/03452 , H01L2224/03462 , H01L2224/03464 , H01L2224/0347 , H01L2224/03474 , H01L2224/0361 , H01L2224/03912 , H01L2224/0401 , H01L2224/05572 , H01L2224/05611 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/0566 , H01L2224/05666 , H01L2224/05671 , H01L2224/10145 , H01L2224/1132 , H01L2224/1133 , H01L2224/11334 , H01L2224/1145 , H01L2224/11452 , H01L2224/11462 , H01L2224/11464 , H01L2224/11849 , H01L2224/11901 , H01L2224/11903 , H01L2224/13014 , H01L2224/13016 , H01L2224/13019 , H01L2224/13022 , H01L2224/13076 , H01L2224/13082 , H01L2224/131 , H01L2224/13111 , H01L2224/13113 , H01L2224/13116 , H01L2224/13124 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/16237 , H01L2224/8114 , H01L2224/81191 , H01L2224/81193 , H01L2224/81203 , H01L2224/81411 , H01L2224/81424 , H01L2224/81439 , H01L2224/81444 , H01L2224/81447 , H01L2224/81455 , H01L2224/81815 , H01L2224/94 , H01L2924/01029 , H01L2924/01322 , H01L2924/12041 , H01L2924/12042 , H01L2924/1306 , H01L2924/13091 , H01L2924/181 , H01L2924/381 , H01L2924/3841 , H01L2924/00014 , H01L2924/01074 , H01L2924/01082 , H01L2924/014 , H01L2224/11 , H01L2224/1161 , H01L2924/00
摘要： A semiconductor device has a semiconductor die with a first conductive layer formed over an active surface of the semiconductor die. An insulation layer is formed over the active surface of the semiconductor die. A second conductive layer is conformally applied over the insulating layer and first conductive layer. Conductive pillars are formed over the first conductive layer. Conductive rings are formed around a perimeter of the conductive pillars. A conductive material is deposited over the surface of the conductive pillars within the conductive rings. A substrate has a third conductive layer formed over a surface of the substrate. The semiconductor die is mounted to a substrate with the third conductive layer electrically connected to the conductive material within the conductive rings. The conductive rings inhibit outward flow of the conductive material from under the conductive pillars to prevent electrical bridging between adjacent conductive pillars.
摘要翻译： 半导体器件具有半导体管芯，其具有形成在半导体管芯的有源表面上的第一导电层。 在半导体管芯的有效表面上形成绝缘层。 第二导电层共形施加在绝缘层和第一导电层上。 导电柱形成在第一导电层上。 导电环围绕导电柱的周边形成。 在导电环内的导电柱的表面上沉积导电材料。 衬底具有形成在衬底的表面上的第三导电层。 将半导体管芯安装到衬底上，其中第三导电层与导电环内的导电材料电连接。 导电环阻止导电材料从导电柱下方向外流动，以防止相邻导电柱之间的电桥接。
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9.发明授权Semiconductor device and method of mounting cover to semiconductor die and interposer with adhesive material 有权将半导体器件和半导体芯片和插入件与粘合材料安装的方法公开(公告)号：US08476115B2
公开(公告)日：2013-07-02
申请号：US13100235
申请日：2011-05-03
申请人： DaeSik Choi , Sang Mi Park , KyungHoon Lee
发明人： DaeSik Choi , Sang Mi Park , KyungHoon Lee
IPC分类号： H01L21/60
CPC分类号： H01L21/56 , H01L21/50 , H01L23/10 , H01L23/34 , H01L23/36 , H01L23/49827 , H01L23/552 , H01L24/16 , H01L24/29 , H01L24/32 , H01L24/73 , H01L24/81 , H01L24/83 , H01L24/92 , H01L2224/16225 , H01L2224/16235 , H01L2224/2919 , H01L2224/2929 , H01L2224/293 , H01L2224/32225 , H01L2224/32245 , H01L2224/33181 , H01L2224/48091 , H01L2224/73204 , H01L2224/73253 , H01L2224/73265 , H01L2224/81191 , H01L2224/81815 , H01L2224/83102 , H01L2224/83192 , H01L2224/83203 , H01L2224/8385 , H01L2224/83851 , H01L2224/83862 , H01L2224/92225 , H01L2924/01029 , H01L2924/01322 , H01L2924/07811 , H01L2924/12041 , H01L2924/12042 , H01L2924/1306 , H01L2924/13091 , H01L2924/15311 , H01L2924/181 , H01L2924/3011 , H01L2924/3025 , H01L2924/00014 , H01L2924/0665 , H01L2924/00012 , H01L2924/00
摘要： A semiconductor device has an interposer with a die attach area interior to the interposer and cover attach area outside the die attach area. A channel is formed into a surface of the interposer within the cover attach area. A dam material is formed over the surface of the interposer within the cover attach area between the channel and edge of the interposer. A semiconductor die is mounted to the die attach area of the interposer. An adhesive material is deposited in the cover attach area away from the channel and dam material. A cover, such as a heat spreader or shielding layer, is mounted to the die and interposer within the cover attach area. The cover presses the adhesive material into the channel and against the dam material to control outward flow of the adhesive material. Alternatively, ACF can be formed over the interposer to mount the cover.
摘要翻译： 半导体器件具有插入件，其内部具有管芯附着区域，并且在管芯附着区域外部具有覆盖附着区域。 通道形成在盖附接区域内的插入件的表面中。 在插入器的通道和边缘之间的覆盖附着区域内的中介层的表面上形成坝体材料。 将半导体管芯安装到插入件的管芯附着区域。 粘合剂材料沉积在覆盖物附着区域中，远离通道和坝体材料。 诸如散热器或屏蔽层的盖子被安装到盖子附接区域内的模具和插入件上。 盖子将粘合剂材料压入通道并抵靠坝体材料以控制粘合剂材料的向外流动。 或者，ACF可以形成在插入件上方以安装盖。
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10.发明申请Semiconductor Device and Method of Mounting Cover to Semiconductor Die and Interposer with Adhesive Material 有权半导体器件和将封装安装到具有粘合材料的半导体管芯和插入件的方法公开(公告)号：US20120280374A1
公开(公告)日：2012-11-08
申请号：US13100235
申请日：2011-05-03
申请人： DaeSik Choi , Sang Mi Park , KyungHoon Lee
发明人： DaeSik Choi , Sang Mi Park , KyungHoon Lee
IPC分类号： H01L23/552 , H01L23/48 , H01L21/60 , H01L21/50
CPC分类号： H01L21/56 , H01L21/50 , H01L23/10 , H01L23/34 , H01L23/36 , H01L23/49827 , H01L23/552 , H01L24/16 , H01L24/29 , H01L24/32 , H01L24/73 , H01L24/81 , H01L24/83 , H01L24/92 , H01L2224/16225 , H01L2224/16235 , H01L2224/2919 , H01L2224/2929 , H01L2224/293 , H01L2224/32225 , H01L2224/32245 , H01L2224/33181 , H01L2224/48091 , H01L2224/73204 , H01L2224/73253 , H01L2224/73265 , H01L2224/81191 , H01L2224/81815 , H01L2224/83102 , H01L2224/83192 , H01L2224/83203 , H01L2224/8385 , H01L2224/83851 , H01L2224/83862 , H01L2224/92225 , H01L2924/01029 , H01L2924/01322 , H01L2924/07811 , H01L2924/12041 , H01L2924/12042 , H01L2924/1306 , H01L2924/13091 , H01L2924/15311 , H01L2924/181 , H01L2924/3011 , H01L2924/3025 , H01L2924/00014 , H01L2924/0665 , H01L2924/00012 , H01L2924/00
摘要： A semiconductor device has an interposer with a die attach area interior to the interposer and cover attach area outside the die attach area. A channel is formed into a surface of the interposer within the cover attach area. A dam material is formed over the surface of the interposer within the cover attach area between the channel and edge of the interposer. A semiconductor die is mounted to the die attach area of the interposer. An adhesive material is deposited in the cover attach area away from the channel and dam material. A cover, such as a heat spreader or shielding layer, is mounted to the die and interposer within the cover attach area. The cover presses the adhesive material into the channel and against the dam material to control outward flow of the adhesive material. Alternatively, ACF can be formed over the interposer to mount the cover.
摘要翻译： 半导体器件具有插入件，其内部具有管芯附着区域，并且在管芯附着区域外部具有覆盖附着区域。 通道形成在盖附接区域内的插入件的表面中。 在插入器的通道和边缘之间的覆盖附着区域内的中介层的表面上形成坝体材料。 将半导体管芯安装到插入件的管芯附着区域。 粘合剂材料沉积在覆盖物附着区域中，远离通道和坝体材料。 诸如散热器或屏蔽层的盖子被安装到盖子附接区域内的模具和插入件上。 盖子将粘合剂材料压入通道并抵靠坝体材料以控制粘合剂材料的向外流动。 或者，ACF可以形成在插入件上方以安装盖。
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