公开(公告)号：US09059003B2

公开(公告)日：2015-06-16

申请号：US14364555

申请日：2013-02-22

申请人： NIPPON MICROMETAL CORPORATION ,  WASEDA UNIVERSITY

发明人： Kohei Tatsumi ,  Takashi Yamada ,  Daizo Oda

IPC分类号： H01L23/00

CPC分类号： H01L24/05 ,  H01L24/03 ,  H01L24/43 ,  H01L24/45 ,  H01L24/48 ,  H01L24/85 ,  H01L2224/03444 ,  H01L2224/0345 ,  H01L2224/0346 ,  H01L2224/04042 ,  H01L2224/05007 ,  H01L2224/05073 ,  H01L2224/05082 ,  H01L2224/05083 ,  H01L2224/05084 ,  H01L2224/05118 ,  H01L2224/05124 ,  H01L2224/05139 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05164 ,  H01L2224/05166 ,  H01L2224/05169 ,  H01L2224/05171 ,  H01L2224/05172 ,  H01L2224/05184 ,  H01L2224/05618 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/05666 ,  H01L2224/05669 ,  H01L2224/05671 ,  H01L2224/05672 ,  H01L2224/05684 ,  H01L2224/32245 ,  H01L2224/43 ,  H01L2224/4312 ,  H01L2224/43125 ,  H01L2224/4321 ,  H01L2224/43848 ,  H01L2224/43986 ,  H01L2224/45005 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45565 ,  H01L2224/45572 ,  H01L2224/45611 ,  H01L2224/45618 ,  H01L2224/45624 ,  H01L2224/45639 ,  H01L2224/45644 ,  H01L2224/45647 ,  H01L2224/45655 ,  H01L2224/45664 ,  H01L2224/45666 ,  H01L2224/45669 ,  H01L2224/45671 ,  H01L2224/45672 ,  H01L2224/45684 ,  H01L2224/45686 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48463 ,  H01L2224/48472 ,  H01L2224/48818 ,  H01L2224/48824 ,  H01L2224/48839 ,  H01L2224/48844 ,  H01L2224/48847 ,  H01L2224/48855 ,  H01L2224/48864 ,  H01L2224/48866 ,  H01L2224/48869 ,  H01L2224/48871 ,  H01L2224/48872 ,  H01L2224/48884 ,  H01L2224/73265 ,  H01L2224/78313 ,  H01L2224/85205 ,  H01L2224/85207 ,  H01L2224/85439 ,  H01L2224/8592 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01047 ,  H01L2924/10253 ,  H01L2924/10272 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/15747 ,  H01L2924/20103 ,  H01L2924/351 ,  H01L2924/00015 ,  H01L2924/20755 ,  H01L2924/20756 ,  H01L2924/20757 ,  H01L2924/20758 ,  H01L2924/20759 ,  H01L2924/2076 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2924/01079 ,  H01L2924/01046 ,  H01L2924/013 ,  H01L2924/00013 ,  H01L2924/01202 ,  H01L2924/20107 ,  H01L2924/20106 ,  H01L2224/29099 ,  H01L2924/01023 ,  H01L2924/01074 ,  H01L2924/01049

摘要： It is an object of the present invention to provide a power semiconductor device, which is capable of being operable regardless of thermal stress generation, reducing a heat generation from wire, securing the reliability of bonding portion when the device is used for dealing with a large amount current and/or under a high temperature atmosphere, a method of manufacturing the device and a bonding wire. In a power semiconductor device in which a metal electrode (die electrode 3) on a power semiconductor die 2 and another metal electrode (connection electrode 4) are connected by metal wire 5 using wedge bonding connection, the metal wire is Ag or Ag alloy wire of which diameter is greater than 50 μm and not greater than 2 mm and the die 3 has thereon one or more metal and/or alloy layers, each of the layer(s) being 50 Å or more in thickness and a metal for the layer is selected from Ni, Cr, Cu, Pd, V, Ti, Pt, Zn, Ag, Au, W and Al.

摘要翻译： 本发明的目的是提供一种功率半导体器件，该功率半导体器件能够在不受热应力产生的情况下运行，从而减少线材的发热，确保当器件用于处理大的时候的接合部分的可靠性 量电流和/或在高温气氛下，制造该装置的方法和接合线。 在功率半导体器件中，功率半导体管芯2上的金属电极（管芯电极3）和另一个金属电极（连接电极4）通过金属线5使用楔形接合连接，金属线是Ag或Ag合金线 其直径大于50μm且不大于2mm，并且模具3上具有一个或多个金属和/或合金层，每个层的厚度均为50或更大，并且该层的金属 选自Ni，Cr，Cu，Pd，V，Ti，Pt，Zn，Ag，Au，W和Al。

公开(公告)号：US20140327018A1

公开(公告)日：2014-11-06

申请号：US14364555

申请日：2013-02-22

申请人： NIPPON MICROMETAL CORPORATION ,  WASEDA UNIVERSITY

发明人： Kohei Tatsumi ,  Takashi Yamada ,  Daizo Oda

IPC分类号： H01L23/00

CPC分类号： H01L24/05 ,  H01L24/03 ,  H01L24/43 ,  H01L24/45 ,  H01L24/48 ,  H01L24/85 ,  H01L2224/03444 ,  H01L2224/0345 ,  H01L2224/0346 ,  H01L2224/04042 ,  H01L2224/05007 ,  H01L2224/05073 ,  H01L2224/05082 ,  H01L2224/05083 ,  H01L2224/05084 ,  H01L2224/05118 ,  H01L2224/05124 ,  H01L2224/05139 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05164 ,  H01L2224/05166 ,  H01L2224/05169 ,  H01L2224/05171 ,  H01L2224/05172 ,  H01L2224/05184 ,  H01L2224/05618 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/05666 ,  H01L2224/05669 ,  H01L2224/05671 ,  H01L2224/05672 ,  H01L2224/05684 ,  H01L2224/32245 ,  H01L2224/43 ,  H01L2224/4312 ,  H01L2224/43125 ,  H01L2224/4321 ,  H01L2224/43848 ,  H01L2224/43986 ,  H01L2224/45005 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45565 ,  H01L2224/45572 ,  H01L2224/45611 ,  H01L2224/45618 ,  H01L2224/45624 ,  H01L2224/45639 ,  H01L2224/45644 ,  H01L2224/45647 ,  H01L2224/45655 ,  H01L2224/45664 ,  H01L2224/45666 ,  H01L2224/45669 ,  H01L2224/45671 ,  H01L2224/45672 ,  H01L2224/45684 ,  H01L2224/45686 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48463 ,  H01L2224/48472 ,  H01L2224/48818 ,  H01L2224/48824 ,  H01L2224/48839 ,  H01L2224/48844 ,  H01L2224/48847 ,  H01L2224/48855 ,  H01L2224/48864 ,  H01L2224/48866 ,  H01L2224/48869 ,  H01L2224/48871 ,  H01L2224/48872 ,  H01L2224/48884 ,  H01L2224/73265 ,  H01L2224/78313 ,  H01L2224/85205 ,  H01L2224/85207 ,  H01L2224/85439 ,  H01L2224/8592 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01047 ,  H01L2924/10253 ,  H01L2924/10272 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/15747 ,  H01L2924/20103 ,  H01L2924/351 ,  H01L2924/00015 ,  H01L2924/20755 ,  H01L2924/20756 ,  H01L2924/20757 ,  H01L2924/20758 ,  H01L2924/20759 ,  H01L2924/2076 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2924/01079 ,  H01L2924/01046 ,  H01L2924/013 ,  H01L2924/00013 ,  H01L2924/01202 ,  H01L2924/20107 ,  H01L2924/20106 ,  H01L2224/29099 ,  H01L2924/01023 ,  H01L2924/01074 ,  H01L2924/01049

摘要： It is an object of the present invention to provide a power semiconductor device, which is capable of being operable regardless of thermal stress generation, reducing a heat generation from wire, securing the reliability of bonding portion when the device is used for dealing with a large amount current and/or under a high temperature atmosphere, a method of manufacturing the device and a bonding wire. In a power semiconductor device in which a metal electrode (die electrode 3) on a power semiconductor die 2 and another metal electrode (connection electrode 4) are connected by metal wire 5 using wedge bonding connection, the metal wire is Ag or Ag alloy wire of which diameter is greater than 50 μm and not greater than 2 mm and the die 3 has thereon one or more metal and/or alloy layers, each of the layer(s) being 50 Å or more in thickness and a metal for the layer is selected from Ni, Cr, Cu, Pd, V, Ti, Pt, Zn, Ag, Au, W and Al.

摘要翻译： 本发明的目的是提供一种功率半导体器件，该功率半导体器件能够在不受热应力产生的情况下运行，从而减少线材的发热，确保当器件用于处理大的时候的接合部分的可靠性 量电流和/或在高温气氛下，制造该装置的方法和接合线。 在功率半导体器件中，功率半导体管芯2上的金属电极（管芯电极3）和另一个金属电极（连接电极4）通过金属线5使用楔形接合连接，金属线是Ag或Ag合金线 其直径大于50μm且不大于2mm，并且模具3上具有一个或多个金属和/或合金层，每个层的厚度均为50或更大，并且该层的金属 选自Ni，Cr，Cu，Pd，V，Ti，Pt，Zn，Ag，Au，W和Al。

公开(公告)号：US10985130B2

公开(公告)日：2021-04-20

申请号：US16976069

申请日：2019-09-20

申请人： NIPPON STEEL CHEMICAL & MATERIAL CO., LTD. ,  NIPPON MICROMETAL CORPORATION

发明人： Tetsuya Oyamada ,  Tomohiro Uno ,  Takashi Yamada ,  Daizo Oda

IPC分类号： H01L23/00 ,  C22C9/00 ,  H01L23/49

摘要： It is an object to provide a Cu alloy bonding wire for a semiconductor device that can satisfy required performance in high-density LSI applications. In the Cu alloy bonding wire for a semiconductor device according to the present invention, each of abundance ratios of crystal orientations , and having an angular difference of 15 degrees or less from a direction perpendicular to one plane including a wire center axis out of crystal orientations on a wire surface is 3% or more and less than 27% in average area percentage.

公开(公告)号：US10529683B2

公开(公告)日：2020-01-07

申请号：US16062084

申请日：2016-06-24

申请人： NIPPON STEEL CHEMICAL & MATERIAL CO., LTD. ,  NIPPON MICROMETAL CORPORATION

发明人： Tetsuya Oyamada ,  Tomohiro Uno ,  Daizo Oda ,  Takashi Yamada

IPC分类号： H01L23/00 ,  C22C9/04 ,  C22C9/06 ,  B23K35/30 ,  B32B15/01 ,  B32B15/20

摘要： A bonding wire for a semiconductor device, which is suitable for on-vehicle devices bonding wire, has excellent capillary wear resistance and surface flaw resistance while ensuring high bonding reliability and further satisfies overall performance including ball formability and wedge bondability, the bonding wire including: a Cu alloy core material; a Pd coating layer formed on a surface of the Cu alloy core material; and a Cu surface layer formed on a surface of the Pd coating layer, in which the bonding wire for semiconductor device contains Ni, a concentration of the Ni in the bonding wire is 0.1 to 1.2 wt. %, the Pd coating layer is 0.015 to 0.150 μm in thickness, and the Cu surface layer is 0.0005 to 0.0070 μm in thickness.

公开(公告)号：US10525555B2

公开(公告)日：2020-01-07

申请号：US15851554

申请日：2017-12-21

申请人： NIPPON MICROMETAL CORPORATION ,  NIPPON STEEL CHEMICAL & MATERIAL CO., LTD.

发明人： Takashi Yamada ,  Daizo Oda ,  Teruo Haibara ,  Ryo Oishi ,  Kazuyuki Saito ,  Tomohiro Uno

IPC分类号： B23K35/02 ,  B23K35/30 ,  H01L23/00 ,  C22C9/04 ,  C22C9/06 ,  B32B15/01 ,  B32B15/00 ,  C23C30/00 ,  C22C9/00 ,  C22C5/04 ,  B23K101/40

摘要： A bonding wire for a semiconductor device includes a Cu alloy core material and a Pd coating layer formed on a surface thereof. Containing an element that provides bonding reliability in a high-temperature environment improves the bonding reliability of the ball bonded part in high temperature. Furthermore, making an orientation proportion of a crystal orientation angled at 15 degrees or less to a wire longitudinal direction among crystal orientations in the wire longitudinal direction 30% or more when measuring crystal orientations on a cross-section of the core material in a direction perpendicular to a wire axis of the bonding wire, and making an average crystal grain size in the cross-section of the core material in the direction perpendicular to the wire axis of the bonding wire 0.9 to 1.5 μm provides a strength ratio of 1.6 or less.

公开(公告)号：US10461055B2

公开(公告)日：2019-10-29

申请号：US16248531

申请日：2019-01-15

申请人： NIPPON MICROMETAL CORPORATION ,  NIPPON STEEL CHEMICAL & MATERIAL CO., LTD.

发明人： Takashi Yamada ,  Daizo Oda ,  Teruo Haibara ,  Tomohiro Uno

IPC分类号： H01L23/00

摘要： A bonding wire for a semiconductor device includes a Cu alloy core material and a Pd coating layer formed on a surface thereof, and the boding wire contains one or more elements of As, Te, Sn, Sb, Bi and Se in a total amount of 0.1 to 100 ppm by mass. The bonding longevity of a ball bonded part can increase in a high-temperature and high-humidity environment, improving the bonding reliability. When the Cu alloy core material further contains one or more of Ni, Zn, Rh, In, Ir, Pt, Ga and Ge in an amount, for each, of 0.011 to 1.2% by mass, it is able to increase the reliability of a ball bonded part in a high-temperature environment of 170° C. or more. When an alloy skin layer containing Au and Pd is further formed on a surface of the Pd coating layer, wedge bondability improves.

公开(公告)号：US10236272B2

公开(公告)日：2019-03-19

申请号：US15107423

申请日：2015-09-18

申请人： NIPPON MICROMETAL CORPORATION ,  NIPPON STEEL & SUMIKIN MATERIALS CO., LTD.

发明人： Takashi Yamada ,  Daizo Oda ,  Teruo Haibara ,  Tomohiro Uno

IPC分类号： H01L23/00

摘要： A bonding wire for a semiconductor device includes a Cu alloy core material and a Pd coating layer formed on a surface thereof, and the boding wire contains one or more elements of As, Te, Sn, Sb, Bi and Se in a total amount of 0.1 to 100 ppm by mass. The bonding longevity of a ball bonded part can increase in a high-temperature and high-humidity environment, improving the bonding reliability. When the Cu alloy core material further contains one or more of Ni, Zn, Rh, In, Ir, Pt, Ga and Ge in an amount, for each, of 0.011 to 1.2% by mass, it is able to increase the reliability of a ball bonded part in a high-temperature environment of 170° C. or more. When an alloy skin layer containing Au and Pd is further formed on a surface of the Pd coating layer, wedge bondability improves.

公开(公告)号：US10121764B2

公开(公告)日：2018-11-06

申请号：US15569603

申请日：2016-04-14

申请人： NIPPON MICROMETAL CORPORATION ,  NIPPON STEEL & SUMIKIN MATERIALS CO., LTD.

发明人： Noritoshi Araki ,  Takashi Yamada ,  Teruo Haibara ,  Ryo Oishi ,  Tomohiro Uno

IPC分类号： B23K31/02 ,  B23K35/22 ,  B23K35/30 ,  H01L23/00 ,  B23K20/00

摘要： The present invention provides a ball forming method for forming a ball portion at a tip of a bonding wire which includes a core material mainly composed of Cu, and a coating layer mainly composed of Pd and formed over a surface of the core material, wherein the ball portion is formed in non-oxidizing atmosphere gas including hydrocarbon which is gas at room temperature and atmospheric pressure, the method being capable of improving Pd coverage on a ball surface in forming a ball at a tip of the Pd-coated Cu bonding wire.

公开(公告)号：US09887172B2

公开(公告)日：2018-02-06

申请号：US15305584

申请日：2015-09-17

申请人： NIPPON MICROMETAL CORPORATION ,  NIPPON STEEL & SUMIKIN MATERIALS CO., LTD.

发明人： Daizo Oda ,  Motoki Eto ,  Kazuyuki Saito ,  Teruo Haibara ,  Ryo Oishi ,  Takashi Yamada ,  Tomohiro Uno

IPC分类号： H01L23/00 ,  C22C9/00

CPC分类号： H01L24/45 ,  B32B15/00 ,  C22C5/04 ,  C22C9/00 ,  C22C9/06 ,  H01L24/43 ,  H01L2224/05624 ,  H01L2224/4312 ,  H01L2224/43125 ,  H01L2224/4321 ,  H01L2224/43825 ,  H01L2224/43826 ,  H01L2224/43827 ,  H01L2224/43848 ,  H01L2224/43986 ,  H01L2224/45 ,  H01L2224/45015 ,  H01L2224/45105 ,  H01L2224/45147 ,  H01L2224/45565 ,  H01L2224/45572 ,  H01L2224/45639 ,  H01L2224/45644 ,  H01L2224/45655 ,  H01L2224/45657 ,  H01L2224/45664 ,  H01L2224/45669 ,  H01L2224/45671 ,  H01L2224/48465 ,  H01L2224/48507 ,  H01L2224/48824 ,  H01L2224/85045 ,  H01L2224/85065 ,  H01L2224/85075 ,  H01L2224/85439 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01014 ,  H01L2924/10253 ,  H01L2924/1576 ,  H01L2924/181 ,  H01L2924/01031 ,  H01L2924/01032 ,  H01L2924/01028 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01005 ,  H01L2924/01015 ,  H01L2924/01012 ,  H01L2924/01029 ,  H01L2924/00012 ,  H01L2924/01202 ,  H01L2924/01203 ,  H01L2924/01204 ,  H01L2924/20106 ,  H01L2924/20107 ,  H01L2924/20108 ,  H01L2924/20109 ,  H01L2924/2011 ,  H01L2924/20111 ,  H01L2924/20752 ,  H01L2924/013 ,  H01L2924/01007 ,  H01L2924/01001 ,  H01L2924/00013 ,  H01L2924/01004 ,  H01L2924/01046 ,  H01L2924/01033

摘要： A bonding wire for a semiconductor device includes a Cu alloy core material and a Pd coating layer on a surface of the Cu alloy core material, and contains Ga and Ge of 0.011 to 1.2% by mass in total, which is able to increase bonding longevity of the ball bonded part in the high-temperature, high-humidity environment, and thus to improve the bonding reliability. The thickness of the Pd coating layer is preferably 0.015 to 0.150 μm. When the bonding wire further contains one or more elements of Ni, Ir, and Pt in an amount, for each element, of 0.011 to 1.2% by mass, it is able to improve the reliability of the ball bonded part in a high-temperature environment at 175° C. or more. When an alloy skin layer containing Au and Pd is further formed on a surface of the Pd coating layer, wedge bondability improves.

公开(公告)号：US12090578B2

公开(公告)日：2024-09-17

申请号：US17437802

申请日：2020-03-12

申请人： NIPPON MICROMETAL CORPORATION ,  NIPPON STEEL Chemical & Material Co., Ltd.

发明人： Takashi Yamada ,  Akihito Nishibayashi ,  Teruo Haibara ,  Daizo Oda ,  Motoki Eto ,  Tetsuya Oyamada ,  Takayuki Kobayashi ,  Tomohiro Uno

IPC分类号： B23K20/00 ,  B23K35/00 ,  B23K35/02 ,  B23K35/28 ,  C22F1/04 ,  H01L23/00 ,  B23K101/40

CPC分类号： B23K35/0227 ,  B23K20/004 ,  B23K20/005 ,  B23K20/007 ,  B23K35/286 ,  C22F1/04 ,  H01L24/43 ,  H01L24/45 ,  B23K2101/40 ,  H01L24/05 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/43848 ,  H01L2224/43986 ,  H01L2224/45015 ,  H01L2224/45124

摘要： There is provided an Al bonding wire which can provide a sufficient bonding reliability of bonded parts of the bonding wire under a high temperature state where a semiconductor device using the Al bonding wire is operated. The bonding wire is composed of Al or Al alloy, and is characterized in that an average crystal grain size in a cross-section of a core wire in a direction perpendicular to a wire axis of the bonding wire is 0.01 to 50 μm, and when measuring crystal orientations on the cross-section of the core wire in the direction perpendicular to the wire axis of the bonding wire, a crystal orientation angled at 15 degrees or less to a wire longitudinal direction has a proportion of 30 to 90% among crystal orientations in the wire longitudinal direction.