公开(公告)号：US08664716B2

公开(公告)日：2014-03-04

申请号：US12818485

申请日：2010-06-18

申请人： Takayuki Hashimoto ,  Takashi Hirao ,  Noboru Akiyama

发明人： Takayuki Hashimoto ,  Takashi Hirao ,  Noboru Akiyama

IPC分类号： H01L27/06

CPC分类号： H01L29/7802 ,  H01L21/26586 ,  H01L29/0634 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/405 ,  H01L29/407 ,  H01L29/41741 ,  H01L29/41766 ,  H01L29/41775 ,  H01L29/4933 ,  H01L29/66727 ,  H01L29/7803 ,  H02M3/1588 ,  Y02B70/1466

摘要： In a lateral-type power MOSFET, high breakdown voltage is achieved with suppressing to increase a cell pitch, and a feedback capacity and an ON resistance are decreased. An n− type silicon region having a high resistance to be a region of maintaining a breakdown voltage is vertically provided with respect to a main surface of an n+ type silicon substrate, and the n− type silicon region having the high resistance is connected to the n+ type silicon substrate. Also, a conductive substance is filled through an insulating substance inside a trench formed to reach the n+ type silicon substrate from the main surface of the n+ type silicon substrate so as to contact with the n− type silicon region having the high resistance, and the conductive substance is electrically connected to a source electrode.

摘要翻译： 在横向型功率MOSFET中，通过抑制增加电池间距而实现高的击穿电压，并且降低反馈容量和导通电阻。 相对于n +型硅衬底的主表面垂直地设置具有高电阻的n型硅区域作为保持击穿电压的区域，并且具有高电阻的n型硅区域连接到 n +型硅衬底。 此外，导电物质通过绝缘物质填充在形成为从n +型硅衬底的主表面到达n +型硅衬底的沟槽内，以便与具有高电阻的n型硅区接触，并且 导电物质电连接到源电极。

公开(公告)号：US08638577B2

公开(公告)日：2014-01-28

申请号：US13230947

申请日：2011-09-13

申请人： Masaki Shiraishi ,  Takayuki Hashimoto ,  Noboru Akiyama

发明人： Masaki Shiraishi ,  Takayuki Hashimoto ,  Noboru Akiyama

IPC分类号： H02M1/38 ,  H02M3/155

CPC分类号： H02M1/08 ,  H01L24/48 ,  H01L24/49 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2224/49175 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01033 ,  H01L2924/01082 ,  H01L2924/12032 ,  H01L2924/12036 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/30107 ,  H03K17/0822 ,  H03K17/165 ,  H03K17/166 ,  H03K17/6871 ,  H01L2924/00 ,  H01L2224/45099

摘要： In a non-isolated DC/DC converter, a reference potential for a low-side pre-driver which drives a gate of a low-side MOSFET is applied from a portion except for a main circuit passing through a high-side MOSFET and the low-side MOSFET so that a parasitic inductance between a source of the low-side MOSFET and the pre-driver is increased without increasing the sum of parasitic inductances in the main circuit and negative potential driving of the gate of the low-side MOSFET can be performed and a self turn-on phenomenon can be prevented without adding any member and changing drive system.

摘要翻译： 在非隔离型DC / DC转换器中，从通过高侧MOSFET的主电路以外的部分施加驱动低侧MOSFET的栅极的低侧预驱动器的基准电位， 低侧MOSFET，使得低侧MOSFET的源极与预驱动器之间的寄生电感增加，而不增加主电路中的寄生电感的和，并且低侧MOSFET的栅极的负电位驱动 并且可以防止在不添加任何构件和改变驱动系统的情况下自启闭现象。

公开(公告)号：US07770403B2

公开(公告)日：2010-08-10

申请号：US12368681

申请日：2009-02-10

申请人： Yasuyuki Kojima ,  Noboru Akiyama ,  Takeshi Onaka ,  Tatsumi Yamauchi ,  Koichi Taniguchi ,  Koichi Tokushige ,  Noriyuki Bunkou ,  Keiji Sato

发明人： Yasuyuki Kojima ,  Noboru Akiyama ,  Takeshi Onaka ,  Tatsumi Yamauchi ,  Koichi Taniguchi ,  Koichi Tokushige ,  Noriyuki Bunkou ,  Keiji Sato

IPC分类号： F25B49/00 ,  G05D23/00 ,  G01M1/38

CPC分类号： F24F1/0003 ,  F24F11/30 ,  F24F11/54

摘要： An air conditioning system is arranged to use a power line for communication. The air conditioning system includes one or more indoor units, one or more outdoor units, and a system controller for controlling the indoor units or outdoor units and executes communications between the indoor units and the outdoor units as overlapping a signal on the power line for supplying electric power. The outdoor units are connected with the system controller through a leased communication line. The indoor unit provides a power line communication device being connected with the power line. The outdoor unit provides a leased communication device being connected with the leased communication line. A bridge is also provided for connecting the leased communication line and the power line. The control information is exchanged mutually between the indoor units, the outdoor units and the system controller through the power line.

摘要翻译： 一个空调系统被设置为使用电力线进行通信。 空调系统包括一个或多个室内单元，一个或多个室外单元，以及用于控制室内单元或室外单元的系统控制器，并且执行室内单元和室外单元之间的通信，以与用于供应的电力线路上的信号重叠 电力。 室外机通过租用通信线与系统控制器连接。 室内机提供与电力线连接的电力线通信装置。 户外单元提供与租用通信线路连接的租用通信设备。 还提供了用于连接租用通信线路和电力线路的桥梁。 控制信息通过电力线在室内机，室外机和系统控制器之间相互交换。

公开(公告)号：US20100001790A1

公开(公告)日：2010-01-07

申请号：US12483668

申请日：2009-06-12

申请人： Takayuki HASHIMOTO ,  Takashi Hirao ,  Noboru Akiyama

发明人： Takayuki HASHIMOTO ,  Takashi Hirao ,  Noboru Akiyama

IPC分类号： H01L25/00

CPC分类号： H01L27/0629 ,  H01L2924/0002 ,  H02M7/003 ,  H01L2924/00

摘要： In a semiconductor device, a high-side driver is arranged in a region closer to a periphery of a semiconductor substrate than a high-side switch, and a low-side driver is arranged in a region closer to the periphery of the semiconductor substrate than the low-side switch. By this means, a path from a positive terminal of an input capacitor to a negative terminal of the input capacitor via the high-side switch and the low-side switch is short, a path from a positive terminal of a drive capacitor to a negative terminal of the drive capacitor via the low-side driver is short, and a path from a positive terminal of a boot strap capacitor to a negative terminal of the boot strap capacitor via the high-side driver is short, and therefore, the parasitic inductance can be reduced, and the conversion efficiency can be improved.

摘要翻译： 在半导体装置中，高侧驱动器配置在比高侧开关更靠近半导体基板的周围的区域，低边驱动器配置在比半导体基板的周边更靠近的区域， 低端开关。 通过这种方式，经由高侧开关和低侧开关从输入电容器的正极端子到输入电容器的负极端子的路径很短，从驱动电容器的正极端子到负极的路径 通过低侧驱动器的驱动电容器的端子短，通过高侧驱动器从引导电容器的正极端子到引导电容器的负极端子的路径短，因此，寄生电感 可以降低转换效率。

公开(公告)号：US20090140327A1

公开(公告)日：2009-06-04

申请号：US12326392

申请日：2008-12-02

申请人： Takashi Hirao ,  Takayuki Hashimoto ,  Noboru Akiyama

发明人： Takashi Hirao ,  Takayuki Hashimoto ,  Noboru Akiyama

IPC分类号： H01L29/78 ,  H01L21/336

CPC分类号： H01L29/7802 ,  H01L29/0696 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/407 ,  H01L29/41741 ,  H01L29/42368 ,  H01L29/66727 ,  H01L29/66734 ,  H01L29/7813

摘要： The vertical trench MOSFET comprises: an N type epitaxial region formed on an upper surface of an N+ type substrate having a drain electrode on a lower surface thereof; a gate trench extending from a front surface into the N type epitaxial region; a gate electrode positioned in the gate trench so as to interpose an insulator; a channel region formed on the N type epitaxial region; a source region formed on the channel region; a source electrode formed on the source region; a source trench extending from the front surface into the N type epitaxial region; and a trench-buried source electrode positioned in the source trench so as to interpose an insulator, wherein the source electrode contacts with the trench-buried source electrode.

摘要翻译： 垂直沟槽MOSFET包括：形成在其下表面上具有漏电极的N +型衬底的上表面上的N型外延区域; 栅极沟槽，其从前表面延伸到N型外延区域; 位于所述栅极沟槽中以便插入绝缘体的栅电极; 形成在N型外延区上的沟道区; 形成在沟道区上的源极区; 形成在源极区上的源电极; 源极沟槽，其从前表面延伸到N型外延区域; 以及位于所述源极沟槽中以便插入绝缘体的沟槽埋入式源电极，其中所述源电极与所述沟槽埋入式源极接触。

公开(公告)号：US07002535B2

公开(公告)日：2006-02-21

申请号：US10866302

申请日：2004-06-14

申请人： Makoto Onozawa ,  Yuji Sano ,  Michitaka Ohsawa ,  Takashi Sasaki ,  Noboru Akiyama ,  Fumitaka Asami ,  Kazuo Yoshiikawa ,  Hitoshi Hirakawa ,  Tomokatsu Kishi ,  Toyoshi Kawada

发明人： Makoto Onozawa ,  Yuji Sano ,  Michitaka Ohsawa ,  Takashi Sasaki ,  Noboru Akiyama ,  Fumitaka Asami ,  Kazuo Yoshiikawa ,  Hitoshi Hirakawa ,  Tomokatsu Kishi ,  Toyoshi Kawada

IPC分类号： G09G3/28

CPC分类号： G09G3/2965 ,  G09G3/2927 ,  G09G3/293 ,  G09G3/294 ,  G09G3/296

摘要： A display apparatus includes a display panel including address electrodes and sustain electrodes crossing the address electrodes, with pixels being sandwiched between the address electrodes and the sustain electrodes. A sustain-electrode drive circuit selectively generates both sustain pulses and scan pulses and supplies them to the sustain electrodes. An address-electrode drive circuit generates address pulses based on a video signal and supplies the address pulses to the address electrodes. A control-signal generation circuit generates a control signal for controlling the sustain-electrode drive circuit to generate a selected one of the sustain pulses and the scan pulses and supplies the control signal to the sustain-electrode drive circuit. In order to display an image on the display panel, the sustain-electrode drive circuit both specifies addresses of pixels to be turned on and turns on the pixels at the specified addresses.

公开(公告)号：US20050112932A1

公开(公告)日：2005-05-26

申请号：US11024680

申请日：2004-12-30

申请人： Noboru Akiyama ,  Minehiro Nemoto ,  Seigou Yukutake ,  Yasuyuki Kojima ,  Kazuyuki Kamegaki

发明人： Noboru Akiyama ,  Minehiro Nemoto ,  Seigou Yukutake ,  Yasuyuki Kojima ,  Kazuyuki Kamegaki

IPC分类号： H01L25/18 ,  H01L23/31 ,  H01L23/48 ,  H01L23/495 ,  H01L25/04 ,  H01L25/16 ,  H01R4/24

CPC分类号： H01L23/3107 ,  H01L23/3121 ,  H01L23/48 ,  H01L23/49575 ,  H01L24/06 ,  H01L24/48 ,  H01L24/49 ,  H01L25/162 ,  H01L2224/0401 ,  H01L2224/05554 ,  H01L2224/05599 ,  H01L2224/0603 ,  H01L2224/16 ,  H01L2224/16225 ,  H01L2224/16245 ,  H01L2224/16265 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48095 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2224/484 ,  H01L2224/49175 ,  H01L2224/73207 ,  H01L2224/73265 ,  H01L2224/85399 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01023 ,  H01L2924/01074 ,  H01L2924/014 ,  H01L2924/10161 ,  H01L2924/12036 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19104 ,  H01L2924/3011 ,  H01L2924/30111 ,  H01L2224/45099 ,  H01L2924/00 ,  H01L2924/00012

摘要： A primary side circuit and a secondary side circuit are provided on first and second semiconductor substrates, respectively. A first capacitive insulator on the first substrate electrically insulates and isolates between the primary and secondary side circuits while permitting signal transmission between these circuits. A second capacitive insulator on the second semiconductor substrate electrically isolates the primary and secondary side circuit while permitting signal transmission therebetween. First and second frames are provided for input and output of signals to and from the primary and secondary side circuits. External electrodes of the first and second capacitive insulators are connected together by a third lead frame via a conductive adhesive body including more than one solder ball. The first and second substrates and the lead frames are sealed by a dielectric resin.

摘要翻译： 初级侧电路和次级侧电路分别设置在第一和第二半导体衬底上。 第一基板上的第一电容绝缘体在允许这些电路之间的信号传输的同时在一次侧电路和次侧电路之间电绝缘和隔离。 第二半导体衬底上的第二电容绝缘体电隔离初级和次级侧电路，同时允许它们之间的信号传输。 第一和第二帧被提供用于输入和输出到主电路和次级侧电路的信号。 第一和第二电容性绝缘体的外部电极通过包括多于一个焊球的导电粘合体由第三引线框架连接在一起。 第一和第二基板和引线框由绝缘树脂密封。

公开(公告)号：US5734616A

公开(公告)日：1998-03-31

申请号：US694059

申请日：1996-08-08

申请人： Hideto Kazama ,  Shuichi Miyaoka ,  Akihiko Emori ,  Kinya Mitsumoto ,  Tomoyuki Someya ,  Masahiro Iwamura ,  Noboru Akiyama

发明人： Hideto Kazama ,  Shuichi Miyaoka ,  Akihiko Emori ,  Kinya Mitsumoto ,  Tomoyuki Someya ,  Masahiro Iwamura ,  Noboru Akiyama

IPC分类号： G11C11/419 ,  G11C7/00

CPC分类号： G11C11/419

摘要： A static RAM includes pre-amplifiers, which are made up solely of emitter-follower transistors having their collectors supplied with the power voltage, in one-to-one correspondence to sub common data line pairs which are connected by column switches to complementary data line pairs of memory arrays. The pre-amplifier is provided with a first switch which turns on during the selected state to connect the sub common data line pair to the bases of the transistors and a second switch which turns on during the unselected state to provide the bases with a certain bias voltage lower than the readout signal voltage on the sub common data line pair. The emitter-follower transistors have their emitters connected commonly to form common emitter lines, which are connected to pairs of input terminals of main amplifiers made up of CMOS transistors.

摘要翻译： 静态RAM包括前置放大器，其仅由具有其电源电压的集电极的射极跟随器晶体管组成，与通过列开关连接到互补数据线的子公共数据线对一一对应 成对的存储器阵列。 前置放大器设置有在选择状态期间导通的第一开关，以将子公共数据线对连接到晶体管的基极;以及第二开关，其在未选择状态期间导通，以向基极提供一定的偏置 电压低于副公共数据线对上的读出信号电压。 射极跟随器晶体管的发射极共同连接形成共同的发射极线，其连接到由CMOS晶体管构成的主放大器的输入端对。

公开(公告)号：US5717684A

公开(公告)日：1998-02-10

申请号：US531063

申请日：1995-09-20

申请人： Noboru Akiyama ,  Katsumi Kameda

发明人： Noboru Akiyama ,  Katsumi Kameda

IPC分类号： B29C45/00 ,  G11B23/03 ,  G11B23/28 ,  G11B3/70

CPC分类号： G11B23/287 ,  B29C45/00 ,  G11B23/0303 ,  G11B23/0307 ,  G11B23/0308 ,  G11B23/0313 ,  G11B23/0326

摘要： A disk cartridge with a case comprises upper and lower shell halves, each of which has a head insertion hole and a spindle insertion hole. A pair of projections are provided inwardly at a joint portion between the two holes. The peripheral wall portions of the spindle insertion hole are extended inwardly toward tips of the projections in an arched form. An almost annular projection is provided along a periphery of the spindle insertion hole to increase a supporting portion for supporting the disk when the spindle is taken off from the spindle insertion hole. The inner peripheral walls of the head insertion hole are chamfered. A corner of the groove is chamfered to prevent the corner of the groove from being caught by a part of the guide frame.

摘要翻译： 具有壳体的盘盒包括上半壳和下半壳，每个具有头插入孔和心轴插入孔。 一对突起在两个孔之间的接合部分处向内设置。 主轴插入孔的周壁部以拱形的形式向内突出。 沿着心轴插入孔的周边设置有大致环状的突起部，从而当主轴从主轴插入孔拔出时，增大支撑部的支承部。 头部插入孔的内周壁被倒角。 凹槽的角部被倒角以防止凹槽的角部被引导框架的一部分卡住。

公开(公告)号：US5638240A

公开(公告)日：1997-06-10

申请号：US425047

申请日：1995-04-19

申请人： Noboru Akiyama ,  Katsumi Kameda

发明人： Noboru Akiyama ,  Katsumi Kameda

IPC分类号： G11B23/03

CPC分类号： G11B23/0303 ,  G11B23/0307 ,  G11B23/0308 ,  G11B23/0316

摘要： A disk cartridge comprises a case with an upper and a lower shell halves united together to accommodate a disk of 3.5 inches therein, a guide portion, a shutter, and a slider slid in the guide portion of the case for supporting the shutter. The shutter is moved by a drive pin to open and close a head and spindle holes. The slider enables the shutter to move smoothly along the guide portion and prevents the shutter from being disconnected from the guide portion when the case is dropped.

摘要翻译： 磁盘盒包括壳体，其具有联合在一起以容纳其中3.5英寸的盘的上部和下部半部件，引导部分，快门和滑块，其滑动在壳体的用于支撑快门的引导部分中。 快门由驱动销移动以打开和关闭头部和主轴孔。 该滑块使得快门能够沿着引导部分平滑移动，并且防止当壳体掉落时快门与导向部分断开。