-
1.发明授权Organic binder for shaping ceramic, its production method and product employing the same 失效用于成型陶瓷的有机粘合剂，其制备方法和使用其的产品
公开(公告)号：US5925444A
公开(公告)日：1999-07-20
申请号：US606238
申请日：1996-02-23
CPC分类号： H01L21/4857 , B32B18/00 , C04B2235/6567 , C04B2237/34 , C04B2237/341 , C04B2237/343 , C04B2237/346 , C04B2237/348 , C04B2237/62 , C04B2237/68 , C04B2237/704 , Y10S428/901 , Y10T428/24917 , Y10T428/252 , Y10T428/31855 , Y10T428/31935
摘要： A multilayer ceramic substrate comprising at least one ceramic layer made by laminating at least one ceramic green sheet layer and conductor layers formed on surfaces of the at least one ceramic green sheet layer into laminates and by sintering the resulting laminates. Each ceramic green sheet layer comprises a ceramic precursor composition comprising (I) 100 parts by weight of ceramic fine powder having an average particle diameter of 10 microns or less as component (C) and (II) 5 to 30 parts by weight, based on 100 parts by weight of the ceramic fine powder, of an organic binder for bonding the ceramic fine powder. The organic binder comprises (i) 100 parts by weight of a water insoluble polymer of at least one vinyl monomer as a major component of the organic binder, as component (A), and (ii) 1 to 9.5 parts by weight, based on 100 parts by weight of the component (A), of water soluble polymer as component (B). In the binder particles of the component (A) being dispersed by the component (B) in an aqueous medium resulting from suspension polymerization of the at least one vinyl monomer in water containing the water soluble polymer as a dispersion stabilizer.
摘要翻译： 一种多层陶瓷基板，包括至少一个陶瓷层，该陶瓷层通过将至少一个陶瓷生片层和在至少一个陶瓷生片层的表面上形成的导体层层压到层压体中并通过烧结所得到的层压体而制成。 每个陶瓷生片层包括陶瓷前体组合物，其包含（I）100重量份平均粒径为10微米或更小的陶瓷细粉末作为组分（C）和（II）5至30重量份，基于 100重量份的陶瓷细粉末，用于粘结陶瓷细粉末的有机粘合剂。 有机粘合剂包含（i）作为组分（A）的100重量份至少一种乙烯基单体作为有机粘合剂的主要组分的水不溶性聚合物，和（ii）基于 作为（B）成分的水溶性聚合物成分（A）100重量份。 在由组分（B）分散在由含有水溶性聚合物的水中的至少一种乙烯基单体的悬浮聚合作为分散稳定剂的水性介质中的组分（A）的粘合剂颗粒中。
-
2.发明授权Circuit substrate and manufacture thereof, ceramic composition for circuit substrate, and electronics computer 失效电路基板及其制造方法，电路基板用陶瓷组合物及电子计算机
公开(公告)号：US6118671A
公开(公告)日：2000-09-12
申请号：US103812
申请日：1998-06-24
申请人： Hirayoshi Tanei , Shoichi Iwanaga , Masahide Okamoto , Masato Nakamura , Kousaku Morita , Shousaku Ishihara , Fumikazu Tagami , Norio Sengoku , Tsuyoshi Fujita , Fumiyuki Kobayashi
发明人： Hirayoshi Tanei , Shoichi Iwanaga , Masahide Okamoto , Masato Nakamura , Kousaku Morita , Shousaku Ishihara , Fumikazu Tagami , Norio Sengoku , Tsuyoshi Fujita , Fumiyuki Kobayashi
CPC分类号： C03C14/004 , C03C17/06 , C03C3/089 , C03C8/16 , H01L21/4807 , H01L23/15 , C03C2217/253 , H01L2224/16 , H01L2224/16235 , H01L2924/01012 , H01L2924/01019 , H01L2924/01078 , H01L2924/09701 , H01L2924/15312 , H01L2924/15787 , H05K1/0306 , H05K3/4629 , Y10S428/901
摘要： Ceramic circuit substrate which is sintered at 900 to 1,050.degree. C. and have low relative dielectric constant, thermal expansion coefficient comparable to that of silicon, and high bending strength, and a method of manufacturing are provided by using a glass with a softening point of 850 to 1,100.degree. C., that is, a glass having a composition included in an area in FIG. 1 (triangular composition diagram of SiO.sub.2 --B.sub.2 O.sub.3 --R.sub.2 O, a composition is represented by the position of a small circle, the number in a small circle represents the composition number) defined with lines connecting points representing the first, third, tenth, eleventh, and fourth compositions respectively as raw material.
摘要翻译： 陶瓷电路基板，其在900〜1050℃下烧结并具有低的相对介电常数，与硅相当的热膨胀系数和高的弯曲强度，以及制造方法是通过使用软化点为 850至1100℃，即具有包括在图1中的区域中的组成的玻璃。 图1（SiO 2-B 2 O 3 -R 2 O的三角形组成图，组成由小圆的位置表示，小圆数表示组成数），用连接表示第一，第三，第十，第十一， 和第四组分分别作为原料。
-
公开(公告)号：US4734233A
公开(公告)日：1988-03-29
申请号：US7088
申请日：1987-01-27
申请人： Gyozo Toda , Takashi Kuroki , Shousaku Ishihara , Tsuyoshi Fujita , Naoya Kanda
发明人： Gyozo Toda , Takashi Kuroki , Shousaku Ishihara , Tsuyoshi Fujita , Naoya Kanda
IPC分类号： H01B5/14 , H01B1/16 , H01B13/00 , H01L21/48 , H01L23/15 , H05K1/03 , H05K1/09 , H05K3/00 , H05K3/38 , C04B33/32 , H05K3/12
CPC分类号： H01L23/15 , H01L21/4807 , H01L21/4867 , H01L2924/0002 , H05K1/092 , Y10S428/901 , Y10T428/24917 , Y10T428/24926
摘要： A ceramic wiring substrate and a process for producing the same having a conductive layer, obtained by sintering a conductive paste comprising 85 to 97% by weight of a tungsten powder and 15 to 3% by weight of a sintering additive (for conductive metal) having a specified composition, on a mullite ceramic substrate.
摘要翻译： 一种陶瓷布线基板及其制造方法，具有导电层，其通过烧结包含85〜97重量％的钨粉末和15〜3重量％的烧结添加剂（导电性金属）的导电性糊料而获得，所述烧结添加剂 在莫来石陶瓷基板上的指定组成。
-
4.发明授权
公开(公告)号：US5825632A
公开(公告)日：1998-10-20
申请号：US512705
申请日：1995-08-08
申请人： Hirayoshi Tanei , Shoichi Iwanaga , Masahide Okamoto , Masato Nakamura , Kousaku Morita , Shousaku Ishihara , Fumiyuki Kobayashi , Fumikazu Tagami , Norio Sengoku , Tsuyoshi Fujita
发明人： Hirayoshi Tanei , Shoichi Iwanaga , Masahide Okamoto , Masato Nakamura , Kousaku Morita , Shousaku Ishihara , Fumiyuki Kobayashi , Fumikazu Tagami , Norio Sengoku , Tsuyoshi Fujita
IPC分类号： C03C3/089 , C03C8/16 , C03C14/00 , C03C17/06 , H01L21/48 , H01L23/15 , H05K1/03 , H05K1/11 , H05K1/16
CPC分类号： C03C14/004 , C03C17/06 , C03C3/089 , C03C8/16 , H01L21/4807 , H01L23/15 , C03C2217/253 , H01L2224/16 , H01L2224/16235 , H01L2924/01012 , H01L2924/01019 , H01L2924/01078 , H01L2924/09701 , H01L2924/15312 , H01L2924/15787 , H05K1/0306 , H05K3/4629 , Y10S428/901
摘要： Ceramic circuit substrate which is sintered at 900.degree. to 1,050.degree. C. and have low relative dielectric constant, thermal expansion coefficient comparable to that of silicon, and high bending strength, and a method of manufacturing are provided by using a glass with a softening point of 850.degree. to 1,100.degree. C., that is, a glass having a composition included in an area in FIG. 1 (triangular composition diagram of SiO.sub.2 --B.sub.2 O.sub.3 --R.sub.2 O, a composition is represented by the position of a small circle, the number in a small circle represents the composition number) defined with lines connecting points representing the first, third, tenth, eleventh, and fourth compositions respectively as raw material.
摘要翻译： 在900〜1050℃下烧结并具有低相对介电常数，与硅相当的热膨胀系数和高弯曲强度的陶瓷电路基板及其制造方法通过使用具有软化点的玻璃 为850〜1100℃，即具有图1的区域的成分的玻璃。 图1（SiO 2-B 2 O 3 -R 2 O的三角形组成图，组成由小圆的位置表示，小圆数表示组成数），用连接表示第一，第三，第十，第十一， 和第四组分分别作为原料。
-
5.发明授权
公开(公告)号：US4935285A
公开(公告)日：1990-06-19
申请号：US280346
申请日：1988-12-06
申请人： Gyozo Toda , Takashi Kuroki , Shousaku Ishihara , Naoya Kanda , Tsuyoshi Fujita
发明人： Gyozo Toda , Takashi Kuroki , Shousaku Ishihara , Naoya Kanda , Tsuyoshi Fujita
IPC分类号： H05K3/46 , C04B35/18 , C04B41/51 , C04B41/88 , H01B3/02 , H01B3/12 , H01L23/12 , H01L23/15 , H05K1/00 , H05K1/02 , H05K1/03
CPC分类号： C04B41/5133 , C04B35/18 , C04B41/88 , H01L23/15 , H01L2924/0002 , H05K1/0306 , H05K3/4676 , Y10S428/901 , Y10T29/49126 , Y10T29/49155 , Y10T29/49158 , Y10T29/49165 , Y10T428/24322 , Y10T428/24331 , Y10T428/24917 , Y10T428/31678
摘要： A ceramic substrate for densely integrated semiconductor arrays which is superior in a coefficient of thermal expansion, dielectric constant, strength of metallized bond, and mechanical strength, comprising a sintered body composed essentially of mullite crystals and a non-crystralline binder composed of SiO.sub.2, Al.sub.2 O.sub.3, and MgO, is provided.
-
公开(公告)号：US4908696A
公开(公告)日：1990-03-13
申请号：US97124
申请日：1987-09-16
CPC分类号： H05K1/0212 , H01L23/345 , H01L23/5384 , H01L23/5385 , H01L2224/16225 , H01L2224/73253 , H01L2924/01322 , H01L2924/15311 , H05K2201/10378 , H05K2201/10704 , H05K2201/10734 , H05K2203/1115 , H05K3/3436 , H05K3/3447 , H05K3/3494
摘要： The present invention relates to a connector structure for soldering a wiring substrate such as a ceramic wiring substrate to a connector provided on a printed board and also pertains to semiconductor device packages using the same. It is an object of the present invention to provide a connector structure which provides highly reliable electrical connection, together with semiconductor device package using the same. The object is attained by soldering a ceramic wiring substrate to a connector which involves a heater.
摘要翻译： 本发明涉及一种用于将诸如陶瓷布线基板的布线基板焊接到设置在印刷电路板上的连接器的连接器结构，并且还涉及使用该连接器结构的半导体器件封装。 本发明的目的是提供一种提供高可靠性电连接的连接器结构，以及使用其的半导体器件封装。 该目的是通过将陶瓷布线基板焊接到涉及加热器的连接器来实现的。
-
公开(公告)号：US4817276A
公开(公告)日：1989-04-04
申请号：US847302
申请日：1986-04-02
申请人： Gyozo Toda , Takashi Kuroki , Shousaku Ishihara , Naoya Kanda , Tsuyoshi Fujita
发明人： Gyozo Toda , Takashi Kuroki , Shousaku Ishihara , Naoya Kanda , Tsuyoshi Fujita
IPC分类号： H05K3/46 , C04B35/18 , C04B41/51 , C04B41/88 , H01B3/02 , H01B3/12 , H01L23/12 , H01L23/15 , H05K1/00 , H05K1/02 , H05K1/03 , H05K3/12 , C04B35/10
CPC分类号： C04B41/5133 , C04B35/18 , C04B41/88 , H01L23/15 , H01L2924/0002 , H05K1/0306 , H05K3/4676 , Y10S428/901 , Y10T29/49126 , Y10T29/49155 , Y10T29/49158 , Y10T29/49165 , Y10T428/24322 , Y10T428/24331 , Y10T428/24917 , Y10T428/31678
摘要： A ceramic substrate for densely integrated semiconductor arrays which is superior in a coefficient of thermal expansion, dielectric constant, strength of metallized bond, and mechanical strength, comprising a sintered body composed essentially of mullite crystals and a non-crystalline binder composed of SiO.sub.2, Al.sub.2 O.sub.3, and MgO, is provided.
摘要翻译： 一种用于密集集成的半导体阵列的陶瓷衬底，其热膨胀系数，介电常数，金属化结合强度和机械强度优异，包括基本上由莫来石晶体组成的烧结体和由SiO 2，Al 2 O 3组成的非结晶粘合剂 ，和MgO。
-
公开(公告)号：US4576735A
公开(公告)日：1986-03-18
申请号：US660089
申请日：1984-10-12
CPC分类号： C04B41/009 , C04B41/5138 , C04B41/88 , H01B1/22 , H05K1/092 , H05K3/4061
摘要： An electroconductive molybdenum paste comprising 100 parts by weight of a mixture consisting of 68.0 to 89.2% by weight of molybdenum powders having an average particle size of 0.5 to 10 .mu.m, 10.0 to 27.0% by weight of a solvent, and 0.8 to 5.0% by weight of a binder, 0.5 to 5.0 parts by weight of a gelling agent, and 0.5 to 4.0 parts by weight of a silane coupling agent can firmly fill throughholes of a green sheet without formation of clearances and hollows in the resulting conductors in the throughholes, with better surface roughness of the conductor surfaces in the throughholes, and without development of cracks near the throughholes.
摘要翻译： 一种导电性钼膏，其包含100重量份的由68.0至89.2重量％的平均粒径为0.5至10微米的钼粉末，10.0至27.0重量％的溶剂和0.8至5.0重量％ 的粘合剂，0.5-5.0重量份的胶凝剂和0.5-4.0重量份的硅烷偶联剂可以牢固地填充生片的通孔，而不会在通孔中产生的导体中形成间隙和中空部分 ，通孔中导体表面的表面粗糙度更好，并且不会在通孔附近发展裂纹。
-
9.发明申请Reflow soldering method using Pb-free solder alloy and hybrid packaging method and structure 审中-公开使用无铅焊料合金的回流焊接方法和混合封装方法和结构公开(公告)号：US20060239855A1
公开(公告)日：2006-10-26
申请号：US10562725
申请日：2004-07-01
申请人： Tetsuya Nakatsuka , Nobuhide Takano , Tadayuki Sugahara , Tomoyuki Omura , Toshio Saeki , Kouji Serizawa , Shousaku Ishihara
发明人： Tetsuya Nakatsuka , Nobuhide Takano , Tadayuki Sugahara , Tomoyuki Omura , Toshio Saeki , Kouji Serizawa , Shousaku Ishihara
IPC分类号： C22C13/00
CPC分类号： C22C13/00 , B23K35/262 , H05K3/3415 , H05K3/3447 , H05K3/3463 , H05K3/3468 , H05K2203/111 , H05K2203/1572 , Y02P70/613
摘要： A hybrid mounting method using a Pb-free solder alloy including a reflow soldering step of soldering a surface mounting component 2 to at least the upper surface of a circuit board 1 using a Pb-free solder paste comprising an alloy based on Sn-(1-4)Ag-(0-1)Cu-(7-10)In (unit, mass %)-based alloy, an insertion step of inserting a lead or a terminal of an insertion mounting component 5 into a through hole perforated through the circuit board 1 from the upper surface thereof, a flux coating step, a preheating step, and a flow soldering step of spraying a jet flow 3 of Pb-free solder to the lower surface of the circuit board 1 preheated by the preheating step, thereby flow soldering the lead or the terminal of an insertion mounting component 5 to the circuit board.
摘要翻译： 一种使用无铅焊料合金的混合安装方法，其包括使用包含基于Sn-（1）的合金的无铅焊膏将至少表面安装部件2焊接到电路板1的至少上表面的回流焊步骤 -4）Ag-（0-1）Cu-（7-10）In（单位质量％）基合金，插入步骤，将插入安装部件5的引线或端子插入通孔穿孔 电路板1，其上表面包括焊剂涂布步骤，预热步骤和流动焊接步骤，其将无铅焊料的喷射流3喷射到由预热步骤预热的电路板1的下表面， 从而将插入安装部件5的引线或端子焊接到电路板。
-
公开(公告)号：US5503787A
公开(公告)日：1996-04-02
申请号：US207620
申请日：1994-03-09
CPC分类号： B32B18/00 , C04B35/64 , C04B35/645 , C04B2235/48 , C04B2235/6567 , C04B2235/658 , C04B2235/6582 , C04B2235/6585 , C04B2235/6586 , C04B2235/661 , C04B2237/124 , C04B2237/341 , C04B2237/343 , C04B2237/348 , C04B2237/62 , C04B2237/68 , C04B2237/704 , H05K1/092 , H05K3/4611 , H05K3/4629
摘要： According to this method for manufacturing a multilayer glass-ceramic circuit board, a green sheet laminate is fired in a non-oxidizing atmosphere in a first firing step so that a void content of at least 10% is maintained and strength of the ceramic laminate is increased. Then the laminate is fired in an oxidizing atmosphere in a second firing step so that the organic binder contained in the laminate is removed and the residual carbon content is at most 200 ppm. Thereafter the laminate is fired in a reducing atmosphere in a third firing step to reduce the oxidized conductor circuit. Finally, the laminate is fired in a non-oxidizing atmosphere in a fourth firing step to densify the ceramic laminate. The firing temperature in the first, second and third steps is 100.degree.-200.degree. C. lower than the softening point of the glass and the firing temperature in the fourth step is higher than the softening point of the glass and lower than the melting point of the conductor.
摘要翻译： 根据该多层玻璃 - 陶瓷电路板的制造方法，在第一烧成工序中，在非氧化性气氛中烧成生片层压体，使得保持至少10％的空隙率，陶瓷层叠体的强度为 增加。 然后在第二烧成工序中，在氧化性气氛中烧成层叠体，除去层叠体中含有的有机粘结剂，残存碳含量在200ppm以下。 此后，在第三烧制步骤中，在还原气氛中烧制层压体以还原氧化的导体电路。 最后，在第四烧成工序中，在非氧化性气氛中烧成层叠体，使陶瓷层叠体致密化。 第一，第二和第三步骤的烧成温度比玻璃的软化点低100-200℃，第四步骤的烧成温度高于玻璃的软化点并低于熔点 的导体。
-
-
-
-
-
-
-
-
-
搜索结果
10 条记录 (耗时 0.023 秒)
