公开(公告)号：US20080122050A1

公开(公告)日：2008-05-29

申请号：US11629703

申请日：2005-06-15

申请人： Osamu Ikeda ,  Masahide Okamoto ,  Ryo Haruta ,  Hidemasa Kagii ,  Hiroi Oka ,  Hiroyuki Nakamura

发明人： Osamu Ikeda ,  Masahide Okamoto ,  Ryo Haruta ,  Hidemasa Kagii ,  Hiroi Oka ,  Hiroyuki Nakamura

IPC分类号： H01L23/495

CPC分类号： H01L23/49562 ,  H01L23/49513 ,  H01L23/49524 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/37 ,  H01L24/40 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L2224/04026 ,  H01L2224/05111 ,  H01L2224/05139 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05171 ,  H01L2224/05644 ,  H01L2224/2908 ,  H01L2224/29083 ,  H01L2224/29101 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/29118 ,  H01L2224/29123 ,  H01L2224/29124 ,  H01L2224/29139 ,  H01L2224/29147 ,  H01L2224/29155 ,  H01L2224/2919 ,  H01L2224/32013 ,  H01L2224/32057 ,  H01L2224/32245 ,  H01L2224/32507 ,  H01L2224/37147 ,  H01L2224/40095 ,  H01L2224/40247 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48644 ,  H01L2224/48699 ,  H01L2224/73265 ,  H01L2224/83191 ,  H01L2224/83192 ,  H01L2224/83801 ,  H01L2224/83805 ,  H01L2224/84801 ,  H01L2224/85205 ,  H01L2224/92247 ,  H01L2924/00011 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01063 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/0133 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/15747 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/351 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/01032 ,  H01L2924/00012 ,  H01L2924/01022 ,  H01L2924/01026 ,  H01L2924/01083 ,  H01L2924/3512 ,  H01L2224/48744 ,  H01L2924/00015 ,  H01L2224/83205

摘要： A power semiconductor device in which a semiconductor element is die-mount-connected onto a lead frame in a Pb-free manner. In a die-mount-connection with a large difference of thermal expansion coefficient between a semiconductor element 1 and a lead frame 2, the connection is made with an intermetallic compound 200 having a melting point of 260° C. or higher or a Pb-free solder having a melting point of 260° C. or higher to 400° C. or lower, at the same time, the thermal stress produced in temperature cycles is buffered by a metal layer 100 having a melting point of 260° C. or higher. A Pb-free die-mount-connection which does not melt at the time of reflowing but have no chip crack to occur according to thermal stress can be achieved.

摘要翻译： 一种功率半导体器件，其中半导体元件以无铅方式管芯安装到引线框架上。 在半导体元件1和引线框架2之间的热膨胀系数差大的管芯安装连接中，利用熔点为260℃以上的金属间化合物200或Pb- 熔点为260℃以上且400℃以下的自由焊料，同时在温度循环中产生的热应力由熔点为260℃的金属层100缓冲，或 更高。 可以实现在回流时熔融而不会根据热应力而产生芯片裂纹的无铅模具安装连接。

公开(公告)号：US20070089811A1

公开(公告)日：2007-04-26

申请号：US11585879

申请日：2006-10-25

申请人： Osamu Ikeda ,  Masahide Okamoto ,  Hidemasa Kagii ,  Hiroi Oka ,  Hiroyuki Nakamura

发明人： Osamu Ikeda ,  Masahide Okamoto ,  Hidemasa Kagii ,  Hiroi Oka ,  Hiroyuki Nakamura

IPC分类号： C22F1/08

CPC分类号： C22F1/08 ,  H01L23/49513 ,  H01L23/49582 ,  H01L24/29 ,  H01L24/30 ,  H01L24/32 ,  H01L24/33 ,  H01L24/37 ,  H01L24/40 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L2224/2908 ,  H01L2224/29101 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/32245 ,  H01L2224/32507 ,  H01L2224/37147 ,  H01L2224/37155 ,  H01L2224/3754 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2224/83101 ,  H01L2224/83455 ,  H01L2224/83801 ,  H01L2224/84801 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01063 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/01327 ,  H01L2924/0133 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2924/351 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2924/3512

摘要： In a power semiconductor device, a joint between the power semiconductor element and frame plated with Ni is composed of a laminated structure comprising, from the power semiconductor element side, an intermetallic compound layer having a melting point of 260° C. or higher, a Cu layer, a metal layer having a melting point of 260° C. or higher, a Cu layer and an intermetallic layer having a melting point of 260° C. or higher. The structure of the joint buffers the stress generated by the secondary mounting and temperature cycle at the bond for the semiconductor element and the frame having a large difference in thermal expansion coefficient from each other.

摘要翻译： 在功率半导体装置中，功率半导体元件与镀镍的框架之间的接合部由层叠结构构成，该叠层结构由功率半导体元件侧构成，熔点为260℃以上的金属间化合物层， Cu层，熔点为260℃以上的金属层，Cu层和熔点为260℃以上的金属间化合物层。 接头的结构缓冲了在半导体元件和具有大的热膨胀系数差的框架的接合处由二次安装和温度循环产生的应力。

公开(公告)号：US07579677B2

公开(公告)日：2009-08-25

申请号：US11585879

申请日：2006-10-25

申请人： Osamu Ikeda ,  Masahide Okamoto ,  Hidemasa Kagii ,  Hiroi Oka ,  Hiroyuki Nakamura

发明人： Osamu Ikeda ,  Masahide Okamoto ,  Hidemasa Kagii ,  Hiroi Oka ,  Hiroyuki Nakamura

IPC分类号： H01L23/495

CPC分类号： C22F1/08 ,  H01L23/49513 ,  H01L23/49582 ,  H01L24/29 ,  H01L24/30 ,  H01L24/32 ,  H01L24/33 ,  H01L24/37 ,  H01L24/40 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L2224/2908 ,  H01L2224/29101 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/32245 ,  H01L2224/32507 ,  H01L2224/37147 ,  H01L2224/37155 ,  H01L2224/3754 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2224/83101 ,  H01L2224/83455 ,  H01L2224/83801 ,  H01L2224/84801 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01063 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/01327 ,  H01L2924/0133 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2924/351 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2924/3512

摘要： In a power semiconductor device, a joint between the power semiconductor element and frame plated with Ni is composed of a laminated structure comprising, from the power semiconductor element side, an intermetallic compound layer having a melting point of 260° C. or higher, a Cu layer, a metal layer having a melting point of 260° C. or higher, a Cu layer and an intermetallic layer having a melting point of 260° C. or higher. The structure of the joint buffers the stress generated by the secondary mounting and temperature cycle at the bond for the semiconductor element and the frame having a large difference in thermal expansion coefficient from each other.

摘要翻译： 在功率半导体装置中，功率半导体元件与镀镍的框架之间的接合部由层叠结构构成，该叠层结构由功率半导体元件侧构成，熔点为260℃以上的金属间化合物层， Cu层，熔点为260℃以上的金属层，Cu层和熔点为260℃以上的金属间化合物层。 接头的结构缓冲了在半导体元件和具有大的热膨胀系数差的框架的接合处由二次安装和温度循环产生的应力。

公开(公告)号：US08525330B2

公开(公告)日：2013-09-03

申请号：US13382633

申请日：2010-08-30

申请人： Masahide Okamoto ,  Osamu Ikeda ,  Yuki Murasato

发明人： Masahide Okamoto ,  Osamu Ikeda ,  Yuki Murasato

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： C22C18/04 ,  B22F2998/00 ,  B23K1/0016 ,  B23K2101/42 ,  B32B15/017 ,  C22C21/00 ,  C22C21/06 ,  H01L23/04 ,  H01L23/3107 ,  H01L23/49582 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/29118 ,  H01L2224/29147 ,  H01L2224/29211 ,  H01L2224/2929 ,  H01L2224/29299 ,  H01L2224/29347 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/45124 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2224/83101 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01012 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/0133 ,  H01L2924/0134 ,  H01L2924/10253 ,  H01L2924/13055 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/351 ,  Y10T29/49826 ,  Y10T428/12736 ,  B22F7/062 ,  H01L2924/0105 ,  H01L2924/00012 ,  H01L2924/01013 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01014 ,  H01L2924/01083 ,  H01L2924/01031 ,  H01L2924/01082 ,  H01L2924/01049 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2224/29099 ,  H01L2224/29199 ,  H01L2224/05599

摘要： Provided is a connecting part for a semiconductor device including a semiconductor element, a frame, and a connecting part which connects the semiconductor element and the frame to each other, in which an interface between the connecting part and the semiconductor element and an interface between the connecting part and the frame respectively have the area of Al oxide film which is more than 0% and less than 5% of entire area of the respective interfaces. The connecting part has an Al-based layer and first and second Zn-based layers on main surfaces of the Al-based layer, a thickness ratio of the Al-based layer relative to the Zn-based layers being less than 0.59.

摘要翻译： 提供了一种半导体器件的连接部件，其包括半导体元件，框架和将半导体元件和框架彼此连接的连接部分，其中连接部分和半导体元件之间的界面和 连接部和框架分别具有比各界面的整个面积大于0％且小于5％的Al氧化物膜的面积。 连接部分在Al基层的主表面上具有Al基层和第一和第二Zn基层，Al基层相对于Zn基层的厚度比小于0.59。

公开(公告)号：US07256501B2

公开(公告)日：2007-08-14

申请号：US11281502

申请日：2005-11-18

申请人： Masahide Okamoto ,  Osamu Ikeda ,  Akira Muto ,  Yukihiro Satou

发明人： Masahide Okamoto ,  Osamu Ikeda ,  Akira Muto ,  Yukihiro Satou

IPC分类号： H01L23/12 ,  H01L23/48

CPC分类号： H01L23/49562 ,  H01L23/051 ,  H01L23/3107 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/37 ,  H01L24/40 ,  H01L24/83 ,  H01L2224/29 ,  H01L2224/2908 ,  H01L2224/29101 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/29113 ,  H01L2224/29144 ,  H01L2224/29147 ,  H01L2224/2916 ,  H01L2224/2919 ,  H01L2224/29298 ,  H01L2224/32014 ,  H01L2224/32245 ,  H01L2224/37147 ,  H01L2224/37599 ,  H01L2224/81205 ,  H01L2224/83101 ,  H01L2224/83206 ,  H01L2224/83801 ,  H01L2224/83805 ,  H01L2224/84801 ,  H01L2224/8485 ,  H01L2924/00011 ,  H01L2924/00013 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/0133 ,  H01L2924/0134 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2924/30107 ,  H01L2924/351 ,  H01L2924/01083 ,  H01L2924/00 ,  H01L2924/01014 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/3512 ,  H01L2224/29099 ,  H01L2224/29199 ,  H01L2224/29299 ,  H01L2224/2929

摘要： In a semiconductor device having a package structure in which lead terminals connected to electrodes on both of the upper and lower surfaces of a semiconductor chip are exposed from both of the upper and lower surfaces and side surfaces of a sealing body formed of resin, electrodes of the semiconductor chip and the lead terminals are connected by Pb-free connection parts each having a configuration of connection layer/stress buffer layer/connection layer. In each connection part, the connection layer is formed of an inter-metallic compound layer having a melting point of 260° C. or higher or Pb-free solder having a melting point of 260° C. or higher, and the stress buffer layer is formed of a metal layer having a melting point of 260° C. or higher and having a function to buffer the thermal stress.

摘要翻译： 在具有封装结构的半导体器件中，其中连接到半导体芯片的上表面和下表面上的电极的引线端子从由树脂形成的密封体的上表面和下表面以及侧表面露出， 半导体芯片和引线端子由具有连接层/应力缓冲层/连接层的构造的无铅连接部连接。 在每个连接部分中，连接层由熔点为260℃以上的金属间化合物层或熔点为260℃以上的无铅焊料形成，应力缓冲层 由熔点为260℃以上的金属层形成，具有缓冲热应力的功能。

公开(公告)号：US20060186550A1

公开(公告)日：2006-08-24

申请号：US11272063

申请日：2005-11-14

申请人： Osamu Ikeda ,  Masahide Okamoto ,  Yukihiro Satou

发明人： Osamu Ikeda ,  Masahide Okamoto ,  Yukihiro Satou

IPC分类号： H01L21/44 ,  H01L23/48

CPC分类号： H05K3/3463 ,  B23K35/0238 ,  B23K35/262 ,  B23K35/264 ,  B23K2101/40 ,  H01L23/3128 ,  H01L24/29 ,  H01L24/33 ,  H01L24/37 ,  H01L24/40 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L2224/29101 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/32225 ,  H01L2224/32507 ,  H01L2224/371 ,  H01L2224/3754 ,  H01L2224/40225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/484 ,  H01L2224/73265 ,  H01L2224/83101 ,  H01L2224/83194 ,  H01L2224/83801 ,  H01L2224/8381 ,  H01L2224/8382 ,  H01L2224/83825 ,  H01L2224/84801 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01044 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01083 ,  H01L2924/01087 ,  H01L2924/0132 ,  H01L2924/01327 ,  H01L2924/0133 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/10329 ,  H01L2924/15311 ,  H01L2924/15747 ,  H01L2924/15787 ,  H01L2924/16152 ,  H01L2924/181 ,  H01L2924/19105 ,  H01L2924/351 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2924/01049 ,  H01L2924/3512 ,  H01L2224/85399 ,  H01L2224/05599

摘要： In a semiconductor module connecting a semiconductor element and a passive element to a printed board, each of connection portions between the semiconductor element and the printed board and between the passive element and the printed board includes a metal with a melting point of 260° C. or higher and an intermetallic compound with a melting point of 260° C. or higher. Specifically, by connecting them using Pb-free solder with a melting point of 260° C. or lower, the printed board capable of lowering in cost, lightening, and reducing back height can be applied to a module board.

摘要翻译： 在将半导体元件和无源元件连接到印刷电路板的半导体模块中，半导体元件和印刷电路板之间以及无源元件和印刷电路板之间的每个连接部分包括熔点为260℃的金属。 以上，熔点260℃以上的金属间化合物。 具体来说，通过使用熔点为260℃以下的无铅焊料进行连接，能够将成本降低，降低后退高度的印刷电路板应用于模块基板。

公开(公告)号：US08389854B2

公开(公告)日：2013-03-05

申请号：US12602385

申请日：2008-10-14

申请人： Masahide Okamoto ,  Osamu Ikeda

发明人： Masahide Okamoto ,  Osamu Ikeda

IPC分类号： H01B7/00

CPC分类号： H01R13/03 ,  B32B15/01 ,  Y10T428/12646 ,  Y10T428/12722

摘要： A Ni plating is applied on a base metal in a metal strip form, and a brightener-free Sn-(1 to 4% by mass)Cu plating is applied on the Ni plating. The metal strip is heat-treated at a temperature at or above the melting point (solidus line) of a Sn-(1 to 4% by mass)Cu alloy to form a Cu-Sn compound layer or a Cu—Ni—Sn-compound layer on the Ni plating layer and a Sn layer or a Sn—Cu-ally layer on the Cu—Sn compound layer or the Cu—Ni—Sn-compound layer. The metal strip is further fabricated into a connector.

摘要翻译： 以金属带状形式将Ni镀覆在基体金属上，并在Ni镀层上施加不添加光亮剂的Sn（1〜4质量％）Cu电镀。 在Sn-（1〜4质量％）Cu合金的熔点（固相线）以上的温度下对金属带进行热处理，形成Cu-Sn化合物层或Cu-Ni-Sn- Ni镀层上的化合物层和Cu-Sn化合物层或Cu-Ni-Sn化合物层上的Sn层或Sn-Cu-烯层。 金属条进一步制造成连接器。

公开(公告)号：US08356742B2

公开(公告)日：2013-01-22

申请号：US13228169

申请日：2011-09-08

申请人： Osamu Ikeda ,  Masahide Okamoto

发明人： Osamu Ikeda ,  Masahide Okamoto

IPC分类号： B23K31/00 ,  B23K35/12

CPC分类号： H01L23/49582 ,  B23K20/02 ,  B23K20/04 ,  B23K35/0238 ,  B32B15/017 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L24/743 ,  H01L24/83 ,  H01L2224/291 ,  H01L2224/29111 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2224/83101 ,  H01L2224/83455 ,  H01L2224/83801 ,  H01L2224/83805 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01009 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/0133 ,  H01L2924/014 ,  H01L2924/13055 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2924/351 ,  Y10T428/12736 ,  Y10T428/31678 ,  H01L2924/01014 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/01083 ,  H01L2924/3512 ,  H01L2224/45099 ,  H01L2224/05599

摘要： In a connecting material of the present invention, a Zn series alloy layer is formed on an outermost surface of an Al series alloy layer. In particular, in the connecting material, an Al content of the Al series alloy layer is 99 to 100 wt. % or a Zn content of the Zn series alloy layer is 90 to 100 wt. %. By using this connecting material, the formation of an Al oxide film on the surface of the connecting material at the time of the connection can be suppressed, and preferable wetness that cannot be obtained with the Zn—Al alloy can be obtained. Further, a high connection reliability can be achieved when an Al series alloy layer is left after the connection, since the soft Al thereof functions as a stress buffer material.

摘要翻译： 在本发明的连接材料中，在Al系合金层的最表面上形成Zn系合金层。 特别地，在连接材料中，Al系合金层的Al含量为99〜100重量％。 Zn系合金层的％或Zn含量为90〜100重量％。 ％。 通过使用该连接材料，可以抑制在连接时在连接材料的表面上形成Al氧化膜，并且可以获得优选的用Zn-Al合金不能获得的湿度。 此外，由于其软Al作为应力缓冲材料，所以在连接后留下Al系合金层时，可以实现高的连接可靠性。

公开(公告)号：US20100175908A1

公开(公告)日：2010-07-15

申请号：US12602385

申请日：2008-10-14

申请人： Masahide Okamoto ,  Osamu Ikeda

发明人： Masahide Okamoto ,  Osamu Ikeda

IPC分类号： H01B5/00 ,  B32B15/01 ,  B32B15/20 ,  B05D5/12

CPC分类号： H01R13/03 ,  B32B15/01 ,  Y10T428/12646 ,  Y10T428/12722

摘要： A Ni plating is applied on a base metal in a metal strip form, and a brightener-free Sn-(1 to 4% by mass)Cu plating is applied on the Ni plating. The metal strip is heat-treated at a temperature at or above the melting point (solidus line) of a Sn-(1 to 4% by mass)Cu alloy to form a Cu—Sn compound layer or a Cu—Ni—Sn-compound layer on the Ni plating layer and a Sn layer or a Sn—Cu-ally layer on the Cu—Sn compound layer or the Cu—Ni—Sn-compound layer. The metal strip is further fabricated into a connector. Thus, a metal strip, which has good soldability on a substrate, is free from the occurrence of whiskers at a terminal part during storage or upon fitting into FPC or FFC, and is necessary for a lead-free connector, can be realized.

摘要翻译： 以金属带状形式将Ni镀覆在基体金属上，并在Ni镀层上施加不添加光亮剂的Sn（1〜4质量％）Cu电镀。 在Sn-（1〜4质量％）Cu合金的熔点（固相线）以上的温度下对金属带进行热处理，形成Cu-Sn化合物层或Cu-Ni-Sn- Ni镀层上的化合物层和Cu-Sn化合物层或Cu-Ni-Sn化合物层上的Sn层或Sn-Cu-烯层。 金属条进一步制造成连接器。 因此，在基板上具有良好的可销售性的金属带在储存期间或在安装到FPC或FFC中时在端子部分没有出现晶须，并且可以实现无铅连接器所必需的。

公开(公告)号：US09393645B2

公开(公告)日：2016-07-19

申请号：US13700294

申请日：2011-07-28

申请人： Takuto Yamaguchi ,  Masahide Okamoto ,  Osamu Ikeda ,  Hiromitsu Kuroda ,  Kazuma Kuroki ,  Shohei Hata ,  Yuichi Oda

发明人： Takuto Yamaguchi ,  Masahide Okamoto ,  Osamu Ikeda ,  Hiromitsu Kuroda ,  Kazuma Kuroki ,  Shohei Hata ,  Yuichi Oda

IPC分类号： B21B3/00 ,  B23K35/00 ,  B23K35/02 ,  B23K1/00 ,  B23K35/28 ,  B23K35/30 ,  B23K35/38 ,  B32B15/01 ,  C22C5/02 ,  C22C9/00 ,  C22F1/00 ,  C22F1/04 ,  C22F1/08 ,  C22F1/16 ,  H01L21/50 ,  H01L23/06 ,  H01L23/10 ,  H01L23/373 ,  H01L23/495 ,  H01L23/00 ,  H01L23/31

CPC分类号： B23K35/0238 ,  B21B3/00 ,  B23K1/0016 ,  B23K35/282 ,  B23K35/286 ,  B23K35/302 ,  B23K35/38 ,  B23K35/383 ,  B23K2101/40 ,  B32B15/017 ,  B32B15/018 ,  C22C5/02 ,  C22C9/00 ,  C22F1/00 ,  C22F1/04 ,  C22F1/08 ,  C22F1/165 ,  H01L21/50 ,  H01L23/06 ,  H01L23/10 ,  H01L23/3107 ,  H01L23/3735 ,  H01L23/49513 ,  H01L23/49582 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L24/743 ,  H01L24/83 ,  H01L2224/2784 ,  H01L2224/29101 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48472 ,  H01L2224/73265 ,  H01L2224/83101 ,  H01L2224/838 ,  H01L2224/8382 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01025 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/013 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/10329 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/15787 ,  H01L2924/16152 ,  H01L2924/181 ,  Y10T428/12708 ,  Y10T428/12736 ,  Y10T428/12792 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/83205

摘要： The disclosed junction material, manufacturing method thereof, and manufacturing method of junction structure utilize lead-free materials and ensure a high reliability of the junction between a semiconductor element and a frame or substrate, or, between a metal plate and another metal plate. For junctions between a semiconductor element and a frame or substrate, by using as the JUNCTION MATERIAL a laminate material comprising a Zn-based metallic layer (101), Al-based metallic layers (102a, 102b) on both sides thereof, and X-based metallic layers (103a, 103b) (X=Cu, Au, Ag or Sn) on the outside of both the Al-based metallic layers (102a, 102b), even in an oxygen-rich environment, the superficial X-based metallic layers protect the Zn and Al from oxidation until said junction material melts, preserving the wettability and bondability of said junction material as solder and securing the high reliability of the junction.

摘要翻译： 所公开的连接材料，其制造方法和接合结构的制造方法利用无铅材料，并确保半导体元件与框架或基板之间或者金属板与另一金属板之间的接合部的高可靠性。 对于半导体元件和框架或基板之间的接合，通过使用作为连接材料的层叠材料，其包含Zn基金属层（101），其两侧上的Al基金属层（102a，102b）和X- 即使在富含氧的环境下，Al基金属层（102a，102b）外侧的金属基金属层（103a，103b）（X = Cu，Au，Ag或Sn），表面的X系金属 层保护Zn和Al免于氧化，直到所述接合材料熔化，保持所述接合材料作为焊料的润湿性和粘合性，并确保接合部的高可靠性。