Abstract:
An electronic device includes an electronic element, a plurality of first sub-electrodes arrayed in a first direction, a plurality of second sub-electrodes arrayed in a second direction that is orthogonal to the first direction, a dummy electrode, and a sealing resin. The sealing resin has a resin back surface from which the plurality of first sub-electrodes, the plurality of second sub-electrodes and the dummy electrode are exposed. The plurality of second sub-electrodes are located further in the first direction than any of the plurality of first sub-electrodes. The plurality of first sub-electrodes are located further in the second direction than any of the plurality of second sub-electrodes. The dummy electrode is located further in the first direction than any of the plurality of first sub-electrodes, and is located further in the second direction than any of the plurality of second sub-electrodes.
Abstract:
A semiconductor device has a semiconductor element provided with a functional surface on which a functional circuit is formed and with a back surface facing in the opposite direction to the functional surface, while also having a lead supporting the semiconductor element and electrically connected to the semiconductor element, and a resin package covering at least a portion of the semiconductor element and the lead. The semiconductor element has a functional surface side electrode formed on the functional surface and equipped with a functional surface side raised part that projects in the direction in which the functional surface faces. The functional surface side raised part of the functional surface side electrode is joined to the lead by solid state bonding.
Abstract:
A semiconductor device includes a semiconductor element circuit, a conductive support and a sealing resin. The conductive support includes a die pad, first terminals spaced in a first direction, second terminals spaced in the first direction and opposite to the first terminals in a second direction perpendicular to the first direction, and a support terminal connected to the die pad. The sealing resin encapsulates portions of the first and second terminals, a portion of the support terminal, the semiconductor element circuit and the die pad. The sealing resin has two first side surfaces spaced apart in the second direction and two second side surfaces spaced apart in the first direction. The first terminals and second terminals are exposed from the first side surfaces, while none of the elements of the conductive support is exposed from the second side surfaces.
Abstract:
An electronic device includes an electronic element, a plurality of first sub-electrodes arrayed in a first direction, a plurality of second sub-electrodes arrayed in a second direction that is orthogonal to the first direction, a dummy electrode, and a sealing resin. The sealing resin has a resin back surface from which the plurality of first sub-electrodes, the plurality of second sub-electrodes and the dummy electrode are exposed. The plurality of second sub-electrodes are located further in the first direction than any of the plurality of first sub-electrodes. The plurality of first sub-electrodes are located further in the second direction than any of the plurality of second sub-electrodes. The dummy electrode is located further in the first direction than any of the plurality of first sub-electrodes, and is located further in the second direction than any of the plurality of second sub-electrodes.
Abstract:
A semiconductor device 1 includes a semiconductor chip 2, a plurality of leads 4, disposed in a periphery of the semiconductor chip 2, and a sealing resin 5, sealing the semiconductor chip 2 and the leads 4 such that lower surfaces 18 and outer end surfaces 20 at sides opposite the semiconductor chip 2 of the leads 4 are exposed. Lead plating layers 21 arranged to improve solder wettability are formed on the lower surfaces 18 and the outer end surfaces 20 of the leads 4.
Abstract:
A resin-encapsulated semiconductor device having a semiconductor chip which is prevented from being damaged. The resin-encapsulated semiconductor device (100) comprises a semiconductor chip (1) including a silicon substrate, a die pad (10) to which the semiconductor chip (1) is secured through a first solder layer (2), a resin-encapsulating layer (30) encapsulating the semiconductor chip (1), and lead terminals (21) electrically connected to the semiconductor chip (1) and including inner lead portion (21b) covered with the resin-encapsulating layer (30). The lead terminals (21) are made of copper or a copper alloy. The die pad (10) is made of 42 alloy or a cover alloy and has a thickness (about 0.125 mm) less than the thickness (about 0.15 mm) of the lead terminals (21).
Abstract:
A resin-encapsulated semiconductor device having a semiconductor chip which is prevented from being damaged. The resin-encapsulated semiconductor device (100) comprises a semiconductor chip (1) including a silicon substrate, a die pad (10) to which the semiconductor chip (1) is secured through a first solder layer (2), a resin-encapsulating layer (30) encapsulating the semiconductor chip (1), and lead terminals (21) electrically connected to the semiconductor chip (1) and including inner lead portion (21b) covered with the resin-encapsulating layer (30). The lead terminals (21) are made of copper or a copper alloy. The die pad (10) is made of 42 alloy or a cover alloy and has a thickness (about 0.125 mm) less than the thickness (about 0.15 mm) of the lead terminals (21).
Abstract:
A resin-encapsulated semiconductor device having a semiconductor chip which is prevented from being damaged. The resin-encapsulated semiconductor device (100) comprises a semiconductor chip (1) including a silicon substrate, a die pad (10) to which the semiconductor chip (1) is secured through a first solder layer (2), a resin-encapsulating layer (30) encapsulating the semiconductor chip (1), and lead terminals (21) electrically connected to the semiconductor chip (1) and including inner lead portion (21b) covered with the resin-encapsulating layer (30). The lead terminals (21) are made of copper or a copper alloy. The die pad (10) is made of 42 alloy or a cover alloy and has a thickness (about 0.125 mm) less than the thickness (about 0.15 mm) of the lead terminals (21).
Abstract:
A semiconductor device has a semiconductor element provided with a functional surface on which a functional circuit is formed and with a back surface facing in the opposite direction to the functional surface, while also having a lead supporting the semiconductor element and electrically connected to the semiconductor element, and a resin package covering at least a portion of the semiconductor element and the lead. The semiconductor element has a functional surface side electrode formed on the functional surface and equipped with a functional surface side raised part that projects in the direction in which the functional surface faces. The functional surface side raised part of the functional surface side electrode is joined to the lead by solid state bonding.