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1.发明授权Semiconductor die and method of forming noise absorbing regions between THVs in peripheral region of the die 有权半导体管芯及在管芯外周区域形成THV之间的吸收区域的方法公开(公告)号：US09236352B2
公开(公告)日：2016-01-12
申请号：US13334556
申请日：2011-12-22
申请人： Reza A. Pagaila , Byung Tai Do , Shuangwu Huang , Nathapong Suthiwongsunthorn , Dioscoro Merilo
发明人： Reza A. Pagaila , Byung Tai Do , Shuangwu Huang , Nathapong Suthiwongsunthorn , Dioscoro Merilo
IPC分类号： H01L23/552 , H01L21/56 , H01L21/683 , H01L23/31 , H01L23/498 , H01L23/538 , H01L23/66 , H01L25/065 , H01L25/00 , H01L23/00
CPC分类号： H01L23/552 , H01L21/565 , H01L21/568 , H01L21/6835 , H01L23/3128 , H01L23/49805 , H01L23/49827 , H01L23/5389 , H01L23/66 , H01L24/03 , H01L24/05 , H01L24/08 , H01L24/48 , H01L24/96 , H01L25/0657 , H01L25/50 , H01L2221/68336 , H01L2224/02122 , H01L2224/02311 , H01L2224/02371 , H01L2224/02372 , H01L2224/02375 , H01L2224/0239 , H01L2224/0401 , H01L2224/04042 , H01L2224/04105 , H01L2224/05009 , H01L2224/05548 , H01L2224/05552 , H01L2224/05554 , H01L2224/05611 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/08145 , H01L2224/48 , H01L2224/96 , H01L2225/06513 , H01L2225/06541 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01047 , H01L2924/01073 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/014 , H01L2924/12041 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/1433 , H01L2924/181 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/30105 , H01L2924/3011 , H01L2924/3025 , H01L2224/03 , H01L2924/00 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A semiconductor wafer has a plurality of semiconductor die. A peripheral region is formed around the die. An insulating material is formed in the peripheral region. A portion of the insulating material is removed to form a through hole via (THV). A conductive material is deposited in the THV to form a conductive THV. A conductive layer is formed between the conductive THV and contact pads of the semiconductor die. A noise absorbing material is deposited in the peripheral region between the conductive THV to isolate the semiconductor die from intra-device interference. The noise absorbing material extends through the peripheral region from a first side of the semiconductor die to a second side of the semiconductor die. The noise absorbing material has an angular, semi-circular, or rectangular shape. The noise absorbing material can be dispersed in the peripheral region between the conductive THV.
摘要翻译： 半导体晶片具有多个半导体管芯。 围绕模具形成周边区域。 在周边区域形成绝缘材料。 绝缘材料的一部分被去除以形成通孔（THV）。 导电材料沉积在THV中以形成导电THV。 在导电THV和半导体管芯的接触焊盘之间形成导电层。 噪声吸收材料沉积在导电THV之间的周边区域中，以将半导体管芯与器件间干扰隔离。 噪声吸收材料从半导体管芯的第一侧延伸穿过周边区域到半导体管芯的第二侧。 噪声吸收材料具有角度，半圆形或矩形形状。 噪声吸收材料可以分散在导电THV之间的周边区域。
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2.发明申请Semiconductor Die and Method of Forming Noise Absorbing Regions Between THVs in Peripheral Region of the Die 有权半导体芯片和模具外围区域中THV之间形成噪声吸收区域的方法公开(公告)号：US20120091567A1
公开(公告)日：2012-04-19
申请号：US13334556
申请日：2011-12-22
申请人： Reza A. Pagaila , Byung Tai Do , Shuangwu Huang , Nathapong Suthiwongsunthorn , Dioscoro Merilo
发明人： Reza A. Pagaila , Byung Tai Do , Shuangwu Huang , Nathapong Suthiwongsunthorn , Dioscoro Merilo
IPC分类号： H01L23/552
CPC分类号： H01L23/552 , H01L21/565 , H01L21/568 , H01L21/6835 , H01L23/3128 , H01L23/49805 , H01L23/49827 , H01L23/5389 , H01L23/66 , H01L24/03 , H01L24/05 , H01L24/08 , H01L24/48 , H01L24/96 , H01L25/0657 , H01L25/50 , H01L2221/68336 , H01L2224/02122 , H01L2224/02311 , H01L2224/02371 , H01L2224/02372 , H01L2224/02375 , H01L2224/0239 , H01L2224/0401 , H01L2224/04042 , H01L2224/04105 , H01L2224/05009 , H01L2224/05548 , H01L2224/05552 , H01L2224/05554 , H01L2224/05611 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/08145 , H01L2224/48 , H01L2224/96 , H01L2225/06513 , H01L2225/06541 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01047 , H01L2924/01073 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/014 , H01L2924/12041 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/1433 , H01L2924/181 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/30105 , H01L2924/3011 , H01L2924/3025 , H01L2224/03 , H01L2924/00 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A semiconductor wafer has a plurality of semiconductor die. A peripheral region is formed around the die. An insulating material is formed in the peripheral region. A portion of the insulating material is removed to form a through hole via (THV). A conductive material is deposited in the THV to form a conductive THV. A conductive layer is formed between the conductive THV and contact pads of the semiconductor die. A noise absorbing material is deposited in the peripheral region between the conductive THV to isolate the semiconductor die from intra-device interference. The noise absorbing material extends through the peripheral region from a first side of the semiconductor die to a second side of the semiconductor die. The noise absorbing material has an angular, semi-circular, or rectangular shape. The noise absorbing material can be dispersed in the peripheral region between the conductive THV.
摘要翻译： 半导体晶片具有多个半导体管芯。 围绕模具形成周边区域。 在周边区域形成绝缘材料。 绝缘材料的一部分被去除以形成通孔（THV）。 导电材料沉积在THV中以形成导电THV。 在导电THV和半导体管芯的接触焊盘之间形成导电层。 噪声吸收材料沉积在导电THV之间的周边区域中，以将半导体管芯与器件间干扰隔离。 噪声吸收材料从半导体管芯的第一侧延伸穿过周边区域到半导体管芯的第二侧。 噪声吸收材料具有角度，半圆形或矩形形状。 噪声吸收材料可以分散在导电THV之间的周边区域。
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3.发明申请Semiconductor Die and Method of Forming Noise Absorbing Regions Between THVS in Peripheral Region of the Die 有权半导体模具和在模具外围区域中形成THVS之间的噪声吸收区域的方法公开(公告)号：US20100230822A1
公开(公告)日：2010-09-16
申请号：US12404069
申请日：2009-03-13
申请人： Reza A. Pagaila , Byung Tai Do , Shuangwu Huang , Nathapong Suthiwongsunthorn , Dioscoro Merilo
发明人： Reza A. Pagaila , Byung Tai Do , Shuangwu Huang , Nathapong Suthiwongsunthorn , Dioscoro Merilo
IPC分类号： H01L23/48 , H01L21/50 , H01L21/768
CPC分类号： H01L23/552 , H01L21/565 , H01L21/568 , H01L21/6835 , H01L23/3128 , H01L23/49805 , H01L23/49827 , H01L23/5389 , H01L23/66 , H01L24/03 , H01L24/05 , H01L24/08 , H01L24/48 , H01L24/96 , H01L25/0657 , H01L25/50 , H01L2221/68336 , H01L2224/02122 , H01L2224/02311 , H01L2224/02371 , H01L2224/02372 , H01L2224/02375 , H01L2224/0239 , H01L2224/0401 , H01L2224/04042 , H01L2224/04105 , H01L2224/05009 , H01L2224/05548 , H01L2224/05552 , H01L2224/05554 , H01L2224/05611 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/08145 , H01L2224/48 , H01L2224/96 , H01L2225/06513 , H01L2225/06541 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01047 , H01L2924/01073 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/014 , H01L2924/12041 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/1433 , H01L2924/181 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/30105 , H01L2924/3011 , H01L2924/3025 , H01L2224/03 , H01L2924/00 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A semiconductor wafer has a plurality of semiconductor die. A peripheral region is formed around the die. An insulating material is formed in the peripheral region. A portion of the insulating material is removed to form a through hole via (THV). A conductive material is deposited in the THV to form a conductive THV. A conductive layer is formed between the conductive THV and contact pads of the semiconductor die. A noise absorbing material is deposited in the peripheral region between the conductive THV to isolate the semiconductor die from intra-device interference. The noise absorbing material extends through the peripheral region from a first side of the semiconductor die to a second side of the semiconductor die. The noise absorbing material has an angular, semi-circular, or rectangular shape. The noise absorbing material can be dispersed in the peripheral region between the conductive THV.
摘要翻译： 半导体晶片具有多个半导体管芯。 围绕模具形成周边区域。 在周边区域形成绝缘材料。 绝缘材料的一部分被去除以形成通孔（THV）。 导电材料沉积在THV中以形成导电THV。 在导电THV和半导体管芯的接触焊盘之间形成导电层。 噪声吸收材料沉积在导电THV之间的周边区域中，以将半导体管芯与器件间干扰隔离。 噪声吸收材料从半导体管芯的第一侧延伸穿过周边区域到半导体管芯的第二侧。 噪声吸收材料具有角度，半圆形或矩形形状。 噪声吸收材料可以分散在导电THV之间的周边区域。
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4.发明授权Semiconductor die and method of forming noise absorbing regions between THVS in peripheral region of the die 有权半导体管芯和在模具的周边区域中形成THVS之间的吸收区域的方法公开(公告)号：US08093151B2
公开(公告)日：2012-01-10
申请号：US12404069
申请日：2009-03-13
申请人： Reza A. Pagaila , Byung Tai Do , Shuangwu Huang , Nathapong Suthiwongsunthorn , Dioscoro Merilo
发明人： Reza A. Pagaila , Byung Tai Do , Shuangwu Huang , Nathapong Suthiwongsunthorn , Dioscoro Merilo
IPC分类号： H01L21/44
CPC分类号： H01L23/552 , H01L21/565 , H01L21/568 , H01L21/6835 , H01L23/3128 , H01L23/49805 , H01L23/49827 , H01L23/5389 , H01L23/66 , H01L24/03 , H01L24/05 , H01L24/08 , H01L24/48 , H01L24/96 , H01L25/0657 , H01L25/50 , H01L2221/68336 , H01L2224/02122 , H01L2224/02311 , H01L2224/02371 , H01L2224/02372 , H01L2224/02375 , H01L2224/0239 , H01L2224/0401 , H01L2224/04042 , H01L2224/04105 , H01L2224/05009 , H01L2224/05548 , H01L2224/05552 , H01L2224/05554 , H01L2224/05611 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/08145 , H01L2224/48 , H01L2224/96 , H01L2225/06513 , H01L2225/06541 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01047 , H01L2924/01073 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/014 , H01L2924/12041 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/1433 , H01L2924/181 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/30105 , H01L2924/3011 , H01L2924/3025 , H01L2224/03 , H01L2924/00 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A semiconductor wafer has a plurality of semiconductor die. A peripheral region is formed around the die. An insulating material is formed in the peripheral region. A portion of the insulating material is removed to form a through hole via (THV). A conductive material is deposited in the THV to form a conductive THV. A conductive layer is formed between the conductive THV and contact pads of the semiconductor die. A noise absorbing material is deposited in the peripheral region between the conductive THV to isolate the semiconductor die from intra-device interference. The noise absorbing material extends through the peripheral region from a first side of the semiconductor die to a second side of the semiconductor die. The noise absorbing material has an angular, semi-circular, or rectangular shape. The noise absorbing material can be dispersed in the peripheral region between the conductive THV.
摘要翻译： 半导体晶片具有多个半导体管芯。 围绕模具形成周边区域。 在周边区域形成绝缘材料。 绝缘材料的一部分被去除以形成通孔（THV）。 导电材料沉积在THV中以形成导电THV。 在导电THV和半导体管芯的接触焊盘之间形成导电层。 噪声吸收材料沉积在导电THV之间的周边区域中，以将半导体管芯与器件间干扰隔离。 噪声吸收材料从半导体管芯的第一侧延伸穿过周边区域到半导体管芯的第二侧。 噪声吸收材料具有角度，半圆形或矩形形状。 噪声吸收材料可以分散在导电THV之间的周边区域。
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5.发明授权Semiconductor device and method of forming a shielding layer between stacked semiconductor die 有权半导体器件和在堆叠的半导体管芯之间形成屏蔽层的方法公开(公告)号：US08378383B2
公开(公告)日：2013-02-19
申请号：US12411310
申请日：2009-03-25
IPC分类号： H01L30/134
CPC分类号： H01L23/552 , H01L21/568 , H01L21/76898 , H01L23/3128 , H01L23/481 , H01L23/49816 , H01L23/49827 , H01L23/50 , H01L23/5389 , H01L24/19 , H01L24/48 , H01L24/85 , H01L25/0657 , H01L25/50 , H01L2223/6677 , H01L2224/0554 , H01L2224/0557 , H01L2224/05571 , H01L2224/05573 , H01L2224/05611 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/12105 , H01L2224/16225 , H01L2224/32145 , H01L2224/32225 , H01L2224/48091 , H01L2224/73203 , H01L2224/73204 , H01L2224/73265 , H01L2224/73267 , H01L2224/85 , H01L2225/06517 , H01L2225/06527 , H01L2924/00014 , H01L2924/01004 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01322 , H01L2924/09701 , H01L2924/12041 , H01L2924/12042 , H01L2924/13091 , H01L2924/14 , H01L2924/1433 , H01L2924/181 , H01L2924/19041 , H01L2924/30105 , H01L2924/3011 , H01L2924/3025 , H01L2924/00012 , H01L2224/45099 , H01L2924/00 , H01L2224/05599 , H01L2224/0555 , H01L2224/0556
摘要： A semiconductor device has a first semiconductor die with a shielding layer formed over its back surface. The first semiconductor die is mounted to a carrier. A first insulating layer is formed over the shielding layer. A second semiconductor die is mounted over the first semiconductor die separated by the shielding layer and first insulating layer. A second insulating layer is deposited over the first and second semiconductor die. A first interconnect structure is formed over the second semiconductor die and second insulating layer. A second interconnect structure is formed over the first semiconductor die and second insulating layer. The shielding layer is electrically connected to a low-impedance ground point through a bond wire, RDL, or TSV. The second semiconductor die may also have a shielding layer formed on its back surface. The semiconductor die are bonded through the metal-to-metal shielding layers.
摘要翻译： 半导体器件具有形成在其背面上的屏蔽层的第一半导体管芯。 第一半导体管芯安装到载体上。 在屏蔽层上形成第一绝缘层。 第二半导体管芯安装在由屏蔽层和第一绝缘层隔开的第一半导体管芯上。 在第一和第二半导体管芯上沉积第二绝缘层。 在第二半导体管芯和第二绝缘层上形成第一互连结构。 在第一半导体管芯和第二绝缘层上形成第二互连结构。 屏蔽层通过接合线RDL或TSV与低阻抗接地点电连接。 第二半导体管芯也可以在其背面形成有屏蔽层。 半导体管芯通过金属对金属屏蔽层接合。
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6.发明申请Semiconductor Device and Method of Forming a Shielding Layer Between Stacked Semiconductor Die 有权半导体器件和堆叠半导体晶片之间形成屏蔽层的方法公开(公告)号：US20100244208A1
公开(公告)日：2010-09-30
申请号：US12411310
申请日：2009-03-25
CPC分类号： H01L23/552 , H01L21/568 , H01L21/76898 , H01L23/3128 , H01L23/481 , H01L23/49816 , H01L23/49827 , H01L23/50 , H01L23/5389 , H01L24/19 , H01L24/48 , H01L24/85 , H01L25/0657 , H01L25/50 , H01L2223/6677 , H01L2224/0554 , H01L2224/0557 , H01L2224/05571 , H01L2224/05573 , H01L2224/05611 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/12105 , H01L2224/16225 , H01L2224/32145 , H01L2224/32225 , H01L2224/48091 , H01L2224/73203 , H01L2224/73204 , H01L2224/73265 , H01L2224/73267 , H01L2224/85 , H01L2225/06517 , H01L2225/06527 , H01L2924/00014 , H01L2924/01004 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01322 , H01L2924/09701 , H01L2924/12041 , H01L2924/12042 , H01L2924/13091 , H01L2924/14 , H01L2924/1433 , H01L2924/181 , H01L2924/19041 , H01L2924/30105 , H01L2924/3011 , H01L2924/3025 , H01L2924/00012 , H01L2224/45099 , H01L2924/00 , H01L2224/05599 , H01L2224/0555 , H01L2224/0556
摘要： A semiconductor device has a first semiconductor die with a shielding layer formed over its back surface. The first semiconductor die is mounted to a carrier. A first insulating layer is formed over the shielding layer. A second semiconductor die is mounted over the first semiconductor die separated by the shielding layer and first insulating layer. A second insulating layer is deposited over the first and second semiconductor die. A first interconnect structure is formed over the second semiconductor die and second insulating layer. A second interconnect structure is formed over the first semiconductor die and second insulating layer. The shielding layer is electrically connected to a low-impedance ground point through a bond wire, RDL, or TSV. The second semiconductor die may also have a shielding layer formed on its back surface. The semiconductor die are bonded through the metal-to-metal shielding layers.
摘要翻译： 半导体器件具有形成在其背面上的屏蔽层的第一半导体管芯。 第一半导体管芯安装到载体上。 在屏蔽层上形成第一绝缘层。 第二半导体管芯安装在由屏蔽层和第一绝缘层隔开的第一半导体管芯上。 在第一和第二半导体管芯上沉积第二绝缘层。 在第二半导体管芯和第二绝缘层上形成第一互连结构。 在第一半导体管芯和第二绝缘层上形成第二互连结构。 屏蔽层通过接合线，RDL或TSV电连接到低阻抗接地点。 第二半导体管芯也可以在其背面形成有屏蔽层。 半导体管芯通过金属对金属屏蔽层接合。
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7.发明授权Semiconductor device and method of forming conductive TSV with insulating annular ring 有权用绝缘环形成导电TSV的半导体器件和方法公开(公告)号：US08349735B2
公开(公告)日：2013-01-08
申请号：US12887811
申请日：2010-09-22
IPC分类号： H01L21/44
CPC分类号： H01L23/5384 , H01L21/486 , H01L21/76898 , H01L2224/16225 , H01L2224/48091 , H01L2224/73265 , H01L2924/01322 , H01L2924/13091 , H01L2924/15311 , H01L2924/00 , H01L2924/00014
摘要： A semiconductor wafer has an insulating layer formed over an active surface of the wafer. A conductive layer is formed over the insulating layer. A first via is formed from a back surface of the semiconductor wafer through the semiconductor wafer and insulating layer to the conductive layer. A conductive material is deposited in the first via to form a conductive TSV. An insulating material can be deposited in the first via to form an insulating core within the conductive via. After forming the conductive TSV, a second via is formed around the conductive TSV from the back surface of the semiconductor wafer through the semiconductor wafer and insulating layer to the conductive layer. An insulating material is deposited in the second via to form an insulating annular ring. The conductive via can be recessed within or extend above a surface of the semiconductor die.
摘要翻译： 半导体晶片具有在晶片的有效表面上形成的绝缘层。 在绝缘层上形成导电层。 第一通孔从半导体晶片的背面通过半导体晶片和绝缘层形成到导电层。 导电材料沉积在第一通孔中以形成导电TSV。 可以在第一通孔中沉积绝缘材料，以在导电通孔内形成绝缘芯。 在形成导电TSV之后，通过半导体晶片和绝缘层从导电TSV周围形成第二通孔，从半导体晶片的背表面到导电层。 绝缘材料沉积在第二通孔中以形成绝缘环形环。 导电通孔可以凹入半导体管芯的表面内或延伸到半导体管芯的表面之上。
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8.发明申请Semiconductor device and method of forming conductive TSV with insulating annular ring 有权用绝缘环形成导电TSV的半导体器件和方法公开(公告)号：US20120068313A1
公开(公告)日：2012-03-22
申请号：US12887811
申请日：2010-09-22
IPC分类号： H01L23/48 , H01L21/768
CPC分类号： H01L23/5384 , H01L21/486 , H01L21/76898 , H01L2224/16225 , H01L2224/48091 , H01L2224/73265 , H01L2924/01322 , H01L2924/13091 , H01L2924/15311 , H01L2924/00 , H01L2924/00014
摘要： A semiconductor wafer has an insulating layer formed over an active surface of the wafer. A conductive layer is formed over the insulating layer. A first via is formed from a back surface of the semiconductor wafer through the semiconductor wafer and insulating layer to the conductive layer. A conductive material is deposited in the first via to form a conductive TSV. An insulating material can be deposited in the first via to form an insulating core within the conductive via. After forming the conductive TSV, a second via is formed around the conductive TSV from the back surface of the semiconductor wafer through the semiconductor wafer and insulating layer to the conductive layer. An insulating material is deposited in the second via to form an insulating annular ring. The conductive via can be recessed within or extend above a surface of the semiconductor die.
摘要翻译： 半导体晶片具有在晶片的有效表面上形成的绝缘层。 在绝缘层上形成导电层。 第一通孔从半导体晶片的背面通过半导体晶片和绝缘层形成到导电层。 导电材料沉积在第一通孔中以形成导电TSV。 可以在第一通孔中沉积绝缘材料，以在导电通孔内形成绝缘芯。 在形成导电TSV之后，通过半导体晶片和绝缘层从导电TSV周围形成第二通孔，从半导体晶片的背表面到导电层。 绝缘材料沉积在第二通孔中以形成绝缘环形环。 导电通孔可以凹入半导体管芯的表面内或延伸到半导体管芯的表面之上。
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9.发明申请公开(公告)号：US20100244241A1
公开(公告)日：2010-09-30
申请号：US12412279
申请日：2009-03-26
IPC分类号： H01L23/498 , H01L21/768 , H01L21/50
CPC分类号： H01L21/76898 , H01L21/302 , H01L21/56 , H01L21/561 , H01L21/76885 , H01L23/3114 , H01L23/481 , H01L23/49811 , H01L24/02 , H01L24/04 , H01L24/05 , H01L24/06 , H01L24/10 , H01L24/11 , H01L24/12 , H01L24/13 , H01L24/14 , H01L24/16 , H01L24/48 , H01L25/0657 , H01L25/105 , H01L2224/02166 , H01L2224/02181 , H01L2224/0391 , H01L2224/0401 , H01L2224/05083 , H01L2224/0557 , H01L2224/05572 , H01L2224/06181 , H01L2224/10125 , H01L2224/1184 , H01L2224/11901 , H01L2224/13009 , H01L2224/1301 , H01L2224/13025 , H01L2224/13027 , H01L2224/13082 , H01L2224/13111 , H01L2224/13113 , H01L2224/13116 , H01L2224/13124 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/1403 , H01L2224/14104 , H01L2224/14181 , H01L2224/16145 , H01L2224/48 , H01L2224/73265 , H01L2225/06513 , H01L2225/06541 , H01L2225/1058 , H01L2924/00013 , H01L2924/00014 , H01L2924/0002 , H01L2924/01013 , H01L2924/01022 , H01L2924/01023 , H01L2924/01024 , H01L2924/01029 , H01L2924/0103 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/014 , H01L2924/04941 , H01L2924/12041 , H01L2924/12042 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/1433 , H01L2924/15174 , H01L2924/181 , H01L2924/1815 , H01L2924/182 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/30105 , H01L2224/13099 , H01L2924/00012 , H01L2924/00 , H01L2224/05552 , H01L2224/11849 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A semiconductor device has a conductive via in a first surface of a substrate. A first interconnect structure is formed over the first surface of the substrate. A first bump is formed over the first interconnect structure. The first bump is formed over or offset from the conductive via. An encapsulant is deposited over the first bump and first interconnect structure. A portion of the encapsulant is removed to expose the first bump. A portion of a second surface of the substrate is removed to expose the conductive via. The encapsulant provides structural support and eliminates the need for a separate carrier wafer when thinning the substrate. A second interconnect structure is formed over the second surface of the substrate. A second bump is formed over the first bump. A plurality of semiconductor devices can be stacked and electrically connected through the conductive via.
摘要翻译： 半导体器件在衬底的第一表面中具有导电通孔。 在衬底的第一表面上形成第一互连结构。 在第一互连结构上形成第一凸点。 第一凸起形成在导电通孔上方或偏离导电通孔。 密封剂沉积在第一凸起和第一互连结构之上。 去除一部分密封剂以露出第一凸块。 去除衬底的第二表面的一部分以暴露导电通孔。 密封剂提供结构支撑，并且在使衬底变薄时不需要单独的载体晶片。 第二互连结构形成在衬底的第二表面上。 在第一凸起上形成第二凸点。 多个半导体器件可以通过导电通孔堆叠并电连接。
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10.发明申请Semiconductor Device and Method of Forming Compliant Polymer Layer Between UBM and Conformal Dielectric Layer/RDL for Stress Relief 有权半导体器件和UBM与保形介质层之间形成合适的聚合物层/ RDL用于应力释放的方法公开(公告)号：US20100140752A1
公开(公告)日：2010-06-10
申请号：US12332325
申请日：2008-12-10
IPC分类号： H01L29/40 , H01L21/44 , H01L23/538 , H01L29/41
CPC分类号： H01L23/481 , H01L23/3121 , H01L23/3128 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/12 , H01L24/16 , H01L24/29 , H01L24/48 , H01L2224/02126 , H01L2224/02313 , H01L2224/0236 , H01L2224/024 , H01L2224/0401 , H01L2224/04042 , H01L2224/05111 , H01L2224/05155 , H01L2224/05572 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/10126 , H01L2224/13022 , H01L2224/13025 , H01L2224/131 , H01L2224/13111 , H01L2224/16225 , H01L2224/16235 , H01L2224/29111 , H01L2224/2919 , H01L2224/48091 , H01L2224/48137 , H01L2224/48227 , H01L2224/4823 , H01L2224/48247 , H01L2224/73265 , H01L2224/83805 , H01L2924/00014 , H01L2924/0002 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01022 , H01L2924/01024 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01073 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01322 , H01L2924/014 , H01L2924/05042 , H01L2924/12041 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/1433 , H01L2924/15311 , H01L2924/181 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/30105 , H01L2924/00 , H01L2924/0665 , H01L2224/05552 , H01L2924/00012 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A semiconductor device has a first conductive layer formed over a top surface of a substrate. A first insulating layer is formed over the substrate. A first dielectric layer is formed over the first insulating layer. A second conductive layer is formed over the first conductive layer and first dielectric layer. A second dielectric layer is formed over the second conductive layer. A polymer material is deposited over the second dielectric layer and second conductive layer. A third conductive layer is formed over the polymer material and second conductive layer. The third conductive layer is electrically connected to the second conductive layer. A first solder bump is formed over the third conductive layer. A conductive via is formed through a back surface of the substrate. The conductive via is electrically connected to the first conductive layer. The polymer material has a low coefficient of thermal expansion.
摘要翻译： 半导体器件具有形成在衬底的顶表面上的第一导电层。 在衬底上形成第一绝缘层。 第一绝缘层形成在第一绝缘层上。 在第一导电层和第一介电层上形成第二导电层。 第二介电层形成在第二导电层上。 聚合物材料沉积在第二介电层和第二导电层上。 在聚合物材料和第二导电层上形成第三导电层。 第三导电层电连接到第二导电层。 在第三导电层上形成第一焊料凸块。 通过衬底的背面形成导电通孔。 导电通孔电连接到第一导电层。 聚合物材料具有低的热膨胀系数。
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